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1. 发明申请

WO2012039555A2 WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：水平发光二极管封装及其制造方法
公开(公告)号：WO2012039555A2
公开(公告)日：2012-03-29
申请号：PCT/KR2011/006544
申请日：2011-09-05
申请人： SEOUL SEMICONDUCTOR CO., LTD. , SEO, Won Cheol , KAL, Dae Sung
发明人： SEO, Won Cheol , KAL, Dae Sung
IPC分类号： H01L33/44 , H01L33/02 , H01L33/62
CPC分类号： H01L33/382 , H01L25/0753 , H01L27/153 , H01L33/0079 , H01L33/20 , H01L33/387 , H01L33/46 , H01L33/505 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2924/00
摘要： Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.
摘要翻译：本发明的示例性实施例提供一种晶片级发光二极管（LED）封装及其制造方法。 LED封装包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的半导体堆叠; 布置在所述第二导电类型半导体层和所述有源层中的多个接触孔，所述接触孔暴露所述第一导电类型半导体层; 布置在所述半导体堆叠的第一侧上的第一凸块，所述第一凸块经由所述多个接触孔电连接到所述第一导电类型半导体层; 布置在所述半导体堆叠的第一侧上的第二凸块，所述第二凸块电连接到所述第二导电型半导体层; 以及覆盖半导体叠层的侧壁的保护绝缘层。

2. 发明申请

WO2010114250A2 LIGHT EMITTING DEVICE HAVING PLURALITY OF LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有多个发光单元的发光装置及其制造方法
公开(公告)号：WO2010114250A2
公开(公告)日：2010-10-07
申请号：PCT/KR2010/001804
申请日：2010-03-24
申请人： SEOUL SEMICONDUCTOR CO., LTD. , SEO, Won Cheol , KAL, Dae Sung , LEE, Joon Hee , KIM, Chang Youn
发明人： SEO, Won Cheol , KAL, Dae Sung , LEE, Joon Hee , KIM, Chang Youn
IPC分类号： H01L33/08
CPC分类号： H01L25/0753 , H01L27/153 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L33/641 , H01L2224/73265 , H01L2224/92247 , H01L2933/0016
摘要： A light emitting device having a plurality of light emitting cells is disclosed. The light emitting device comprises a substrate; a plurality of light emitting cells positioned on the substrate to be spaced apart from one another, each of the light emitting cells comprising a p-type lower semiconductor layer, an active layer and an n-type upper semiconductor layer; p-electrodes positioned to be spaced apart from one another between the substrate and the light emitting cells, the respective p-electrodes being electrically connected to the corresponding lower semiconductor layers, each of the p-electrodes having an extension extending toward adjacent one of the light emitting cells; n-electrodes disposed on upper surfaces of the respective light emitting cells, wherein a contact surface of each of the n-electrodes electrically contacting with each light emitting cell exists both sides of any straight line that bisects the light emitting cell across the center of the upper surface of the light emitting cell; a side insulating layer for covering sides of the light emitting cells; and wires for connecting the p-electrodes and the n-electrodes, the wires being spaced apart from the sides of the light emitting cells by the side insulating layer.
摘要翻译：公开了具有多个发光单元的发光器件。该发光器件包括衬底; 多个发光单元，所述多个发光单元定位在所述衬底上以彼此间隔开，每个发光单元包括p型下半导体层，有源层和n型上半导体层; p电极，所述p电极被定位为在所述衬底和所述发光单元之间彼此间隔开，所述各个p电极电连接到相应的下半导体层，所述p电极中的每一个具有延伸到所述衬底和所述发光单元中的相邻的一个发光单元; 设置在各个发光单元的上表面上的n电极，其中与每个发光单元电接触的每个n电极的接触表面存在于跨过发光单元的中心而平分发光单元的任何直线的两侧发光单元的上表面; 用于覆盖发光单元的侧面的侧面绝缘层; 以及用于连接p电极和n电极的导线，导线通过侧绝缘层与发光单元的侧面间隔开。

3. 发明申请

WO2011129548A2 SUBSTRATE ASSEMBLY FOR CRYSTAL GROWTH AND FABRICATING METHOD FOR LIGHT EMITTING DEVICE USING THE SAME 审中-公开
标题翻译：用于使用其的发光装置的晶体生长和制造方法的基板组件
公开(公告)号：WO2011129548A2
公开(公告)日：2011-10-20
申请号：PCT/KR2011/002454
申请日：2011-04-07
申请人： SEOUL OPTO DEVICE CO., LTD. , LEE, Chung Hoon , YE, Kyung Hee , KAL, Dae Sung , SEO, Won Cheol
发明人： LEE, Chung Hoon , YE, Kyung Hee , KAL, Dae Sung , SEO, Won Cheol
IPC分类号： H01L33/12 , H01L33/02
CPC分类号： H01L33/0079 , Y10T428/24942
摘要： A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates.
摘要翻译：公开了一种其上形成有第一导电型半导体层，有源层和第二导电型半导体层的衬底组件，该衬底组件包括第一衬底，第二衬底和介于其间的结合层。在基板组件中，接合层的热膨胀系数小于或等于第一和第二基板中的至少一个的热膨胀系数。

4. 发明申请

WO2011083923A2 LIGHT EMITTING DIODE HAVING ELECTRODE PADS 审中-公开
标题翻译：具有电极垫的发光二极管
公开(公告)号：WO2011083923A2
公开(公告)日：2011-07-14
申请号：PCT/KR2010/009008
申请日：2010-12-16
申请人： SEOUL OPTO DEVICE CO., LTD. , SEO, Won Chul , KAL, Dae Sung , YE, Kyung Hee , KIM, Kyoung Wan , YOON, Yeo Jin
发明人： SEO, Won Chul , KAL, Dae Sung , YE, Kyung Hee , KIM, Kyoung Wan , YOON, Yeo Jin
IPC分类号： H01L33/36 , H01L33/38
CPC分类号： H01L33/387 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
摘要翻译：本发明的示例性实施例涉及包括衬底，布置在衬底上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层和第二导电类型半导体层之间;第一电极焊盘，电连接到第一导电类型半导体层;第二电极焊盘，设置在第二导电类型半导体层上;绝缘层，设置在第二导电类型半导体层导电型半导体层和第二电极焊盘;以及至少一个上延伸部分，电连接到第二电极焊盘，至少一个上延伸部分电连接到第二导电类型半导体层。

5. 发明申请

WO2010101335A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：WO2010101335A1
公开(公告)日：2010-09-10
申请号：PCT/KR2009/003203
申请日：2009-06-16
申请人： LEE, Chung Hoon , KIM, Dae Won , KAL, Dae Sung , NAM, Ki Bum
发明人： LEE, Chung Hoon , KIM, Dae Won , KAL, Dae Sung , NAM, Ki Bum
IPC分类号： H01L33/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/1053 , H01S5/341 , H01S5/3412
摘要： A light emitting device can be used for light emitting diodes and laser diodes. The light emitting device includes a substrate, a first semiconductor layer on the substrate, a second semiconductor layer on the first semiconductor layer, and a multi-quantum well structure including at least one well layer and at least one barrier layer between the first and second semiconductor layers. A carrier trap portion is formed in at least one layer within the multi-quantum well structure. The carrier trap portion has a band-gap energy that gradually decreases from a periphery of the carrier trap portion to a center thereof.
摘要翻译：发光器件可用于发光二极管和激光二极管。发光器件包括衬底，衬底上的第一半导体层，第一半导体层上的第二半导体层，以及多量子阱结构，其包括至少一个阱层和在第一和第二阱之间的至少一个势垒层半导体层。载流子捕获部分形成在多量子阱结构内的至少一层中。载流子捕获部分具有从载流子捕获部分的周边逐渐减小到其中心的带隙能量。

6. 发明申请

WO2008038924A1 ULTRAVIOLET LIGHT EMITTING DIODE PACKAGE 审中-公开
标题翻译：超紫外线发光二极管封装
公开(公告)号：WO2008038924A1
公开(公告)日：2008-04-03
申请号：PCT/KR2007/004480
申请日：2007-09-18
申请人： SEOUL OPTO DEVICE CO., LTD. , BAE, Jeong Suk , KIM, Jae Jo , KIM, Do Hyung , KAL, Dae Sung
发明人： BAE, Jeong Suk , KIM, Jae Jo , KIM, Do Hyung , KAL, Dae Sung
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L25/0753 , H01L33/56 , H01L33/642 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： An ultraviolet light emitting diode package for emitting ultraviolet light is disclosed. The ultraviolet light emitting diode package comprises an LED chip emitting light with a peak wavelength of 350nm or less, and a protective member provided so that surroundings of the LED chip is covered to protect the LED chip, the protective member having a non-yellowing property to energy from the LED chip.
摘要翻译：公开了一种用于发射紫外光的紫外线发光二极管封装。紫外线发光二极管封装包括发射峰值波长为350nm以下的光的LED芯片，以及设置为使得LED芯片的周围被覆盖以保护LED芯片的保护构件，保护构件具有不变黄的性质来自LED芯片的能量。

7. 发明申请

WO2008111693A1 AC LIGHT EMITTING DIODE 审中-公开
标题翻译：交流发光二极管
公开(公告)号：WO2008111693A1
公开(公告)日：2008-09-18
申请号：PCT/KR2007/001215
申请日：2007-03-13
申请人： SEOUL OPTO DEVICE CO., LTD. , KIM, Dae Won , YOON, Yeo Jin , KAL, Dae Sung
发明人： KIM, Dae Won , YOON, Yeo Jin , KAL, Dae Sung
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L33/62 , H01L2224/48137 , H01L2224/48091 , H01L2924/00014
摘要： Disclosed herein is an AC light emitting diode. The light emitting diode comprises a plurality of light emitting cells two-dimensionally arranged on a single substrate. Wires electrically connect the light emitting cells to one another to thereby form a serial array of the light emitting cells. Further, the light emitting cells are spaced apart from one another by distances within a range of 10 to 30 D, and the serial array is operated while connected to an AC power source. Accordingly, the excellent operating characteristics and light output power can be secured in an AC light emitting diode with a limited size.
摘要翻译：这里公开了一种AC发光二极管。发光二极管包括在单个基板上二维布置的多个发光单元。导线将发光单元彼此电连接从而形成发光单元的串联阵列。此外，发光单元彼此间隔10〜30D的距离，串联阵列在与交流电源连接的状态下工作。因此，可以在具有有限尺寸的AC发光二极管中确保优异的操作特性和光输出功率。

8. 发明申请

WO2008078881A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：WO2008078881A1
公开(公告)日：2008-07-03
申请号：PCT/KR2007/006343
申请日：2007-12-07
申请人： SEOUL OPTO DEVICE CO., LTD. , KIM, Dae Won , KIM, Do Hyung , KAL, Dae Sung , PARK, In Kyu
发明人： KIM, Dae Won , KIM, Do Hyung , KAL, Dae Sung , PARK, In Kyu
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , F21K9/00 , H01L27/153 , H01L2224/48137 , H01L2224/49107
摘要： The disclosed light emitting device comprises at least one first light emitting element including at least one light emitting chip for emitting light having a wavelength of 400 to 500nm and a phosphor; and at least one second light emitting element disposed adjacent to the first light emitting element to emit light having a wavelength of 560 to 880 nm.
摘要翻译：所公开的发光器件包括至少一个第一发光元件，其包括用于发射波长为400至500nm的光的至少一个发光芯片和磷光体; 以及与第一发光元件相邻设置的至少一个第二发光元件，以发射波长为560至880nm的光。

9. 发明申请

WO2012077884A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING GANG BONDING AND SEMICONDUCTOR DEVICE FABRICATED BY THE SAME 审中-公开
标题翻译：使用由其制成的ANG ING ING AND AND AND OF OF OF OF TING TING TING AME AME AME AME AME AME AME AME AME AME AME AME AME AME
公开(公告)号：WO2012077884A1
公开(公告)日：2012-06-14
申请号：PCT/KR2011/004776
申请日：2011-06-30
申请人： LEE, Chung Hoon , KAL, Dae Sung , NAM, Ki Bum
发明人： LEE, Chung Hoon , KAL, Dae Sung , NAM, Ki Bum
IPC分类号： H01L21/58 , H01L21/78
CPC分类号： H01L33/507 , H01L23/49805 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/33 , H01L24/83 , H01L24/94 , H01L33/005 , H01L33/0079 , H01L33/0095 , H01L33/36 , H01L33/44 , H01L33/486 , H01L33/50 , H01L2224/04026 , H01L2224/05073 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05171 , H01L2224/05553 , H01L2224/05571 , H01L2224/06151 , H01L2224/11462 , H01L2224/16013 , H01L2224/16057 , H01L2224/16151 , H01L2224/27462 , H01L2224/32238 , H01L2224/325 , H01L2224/33151 , H01L2224/81893 , H01L2224/83447 , H01L2224/83455 , H01L2224/83893 , H01L2224/94 , H01L2224/97 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2933/0033 , H01L2924/00012 , H01L2924/00014 , H01L2224/81 , H01L2924/00
摘要： A method of fabricating a semiconductor device using gang bonding and a semiconductor device fabricated by the same are disclosed. The method comprises the step of preparing a support substrate having a plurality of semiconductor stack structures aligned on a top thereof. Each of the semiconductor stack structures comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an active region interposed between the first and second conductive semiconductor layers. A member having first lead electrodes and second lead electrodes is prepared to correspond to the plurality of semiconductor stack structures. Then, the plurality of semiconductor stack structures are bonded to the member while maintaining the plurality of semiconductor stack structures on the support substrate. After the plurality of semiconductor stack structures are bonded to the member, the member is divided. Accordingly, it is possible to simplify a chip bonding process and considerably reduce working time.
摘要翻译：公开了一种制造使用组合键的半导体器件的方法和由其制造的半导体器件。该方法包括制备具有在其顶部上对准的多个半导体叠层结构的支撑基板的步骤。每个半导体堆叠结构包括第一导电半导体层，第二导电半导体层和介于第一和第二导电半导体层之间的有源区。准备具有第一引线电极和第二引线电极的部件以对应于多个半导体叠层结构。然后，将多个半导体堆叠结构粘合到构件上，同时将多个半导体堆叠结构保持在支撑衬底上。在多个半导体堆叠结构被结合到构件之后，构件被分割。因此，可以简化芯片接合工艺并大大减少工作时间。

10. 发明申请

WO2008078880A1 A LUMINOUS ELEMENT HAVING A PLURALITY OF CELLS 审中-公开
标题翻译：具有多种细胞的LUMINOUS元件
公开(公告)号：WO2008078880A1
公开(公告)日：2008-07-03
申请号：PCT/KR2007/006342
申请日：2007-12-07
申请人： SEOUL OPTO DEVICE CO., LTD. , KIM, Dae Won , KAL, Dae Sung
发明人： KIM, Dae Won , KAL, Dae Sung
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L2224/48137
摘要： Disclosed is a light emitting element comprising a first array having a plurality of vertical light emitting cells connected in series on a single substrate; and a second array that has another plurality of vertical light emitting cells connected in series on the single substrate and is connected to the first array in reverse parallel. In the light emitting element, each of the vertical light emitting cells in the first and second arrays has a first electrode pad on a bottom surface thereof and a second electrode pad on a top surface thereof, and a connection portion is provided to electrically connect the first electrode pad of the vertical light emitting cell in the first array to the first electrode pad of the vertical light emitting cell in the second array.
摘要翻译：公开了一种发光元件，其包括具有在单个基板上串联连接的多个垂直发光单元的第一阵列; 以及第二阵列，其具有在单个衬底上串联连接并且反向并联连接到第一阵列的另外多个垂直发光单元。在发光元件中，第一和第二阵列中的每个垂直发光单元在其底表面上具有第一电极焊盘，在其顶表面上具有第二电极焊盘，并且连接部分被设置为将第一阵列中的垂直发光单元的第一电极焊盘到第二阵列中的垂直发光单元的第一电极焊盘。

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