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1. 发明申请

WO2012165903A2 SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR LIGHT-EMITTING DEVICE PACKAGE AND LASER-PROCESSING APPARATUS COMPRISING SAME 审中-公开
标题翻译：半导体发光器件，其制造方法和半导体发光器件封装以及包含其的激光加工装置
公开(公告)号：WO2012165903A2
公开(公告)日：2012-12-06
申请号：PCT/KR2012004350
申请日：2012-06-01
申请人： SEOUL OPTO DEVICE CO LTD , LEE JIN WOONG , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , KIM SHIN HYOUNG , KIM TAE GYUN , KIM IN SOO
发明人： LEE JIN WOONG , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , KIM SHIN HYOUNG , KIM TAE GYUN , KIM IN SOO
IPC分类号： H01L33/20 , H01L21/78
CPC分类号： H01L33/24 , H01L33/0095 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L2933/0091
摘要： Disclosed is a semiconductor light-emitting device having superior light-extracting efficiency in a lateral direction and enabling a substrate to be easily cut, a method for manufacturing the semiconductor light-emitting device, and a semiconductor light-emitting device package and a laser-processing apparatus comprising the semiconductor light-emitting device. The semiconductor light-emitting device comprises: a sapphire substrate; and a nitride structure consisting of a plurality of nitride epitaxial layers which are stacked on the upper surface of the sapphire substrate and which comprise an active layer for generating light. Each horizontal cross-section of the substrate and the nitride structure has a diamond shape having two acute angles and two obtuse angles. One or more reforming areas having a horizontal-band shape are formed on at least one surface of the substrate.
摘要翻译：公开了一种在横向上具有优异的光提取效率并使得能够容易地切割基板的半导体发光器件，半导体发光器件的制造方法以及半导体发光器件封装和激光器件，包括半导体发光器件的处理设备。半导体发光器件包括：蓝宝石衬底; 以及由多个氮化物外延层组成的氮化物结构，其堆叠在蓝宝石衬底的上表面上并且包括用于产生光的有源层。衬底和氮化物结构的每个水平横截面具有具有两个锐角和两个钝角的菱形形状。在基板的至少一个表面上形成具有水平带形状的一个或多个重整区域。

2. 发明申请

WO2012026660A1 LIGHT EMITTING DIODE 审中-公开
标题翻译：发光二极管
公开(公告)号：WO2012026660A1
公开(公告)日：2012-03-01
申请号：PCT/KR2011/002361
申请日：2011-04-05
申请人： SEOUL OPTO DEVICE CO., LTD. , KIM, Ye Seul , JEONG, Da Yeon , KIM, Kyoung Wan , YOON, Yeo Jin , OH, Sang Hyun
发明人： KIM, Ye Seul , JEONG, Da Yeon , KIM, Kyoung Wan , YOON, Yeo Jin , OH, Sang Hyun
IPC分类号： H01L33/46 , H01L33/36
CPC分类号： H01L33/46 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/42 , H01L33/60
摘要： Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors.
摘要翻译：公开了一种发光二极管（LED），其包括发光层叠结构和形成为在发光层叠结构上具有图案的电极结构。 LED的电极结构包括在发光层叠结构上沿着图案设置的反射体簇，以及形成为完全覆盖反射体的衬垫材料层。

3. 发明申请

WO2012015153A2 LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR 审中-公开
标题翻译：具有分布式BRAGG反射器的发光二极管
公开(公告)号：WO2012015153A2
公开(公告)日：2012-02-02
申请号：PCT/KR2011/003266
申请日：2011-05-02
申请人： SEOUL OPTO DEVICE CO., LTD. , SUH, Duk Il , KIM, Jae Moo , KIM, Kyoung Wan , YOON, Yeo Jin , KIM, Ye Seul , OH, Sang Hyun , LEE, Jin Woong
发明人： SUH, Duk Il , KIM, Jae Moo , KIM, Kyoung Wan , YOON, Yeo Jin , KIM, Ye Seul , OH, Sang Hyun , LEE, Jin Woong
IPC分类号： H01L33/10 , H01L33/46
CPC分类号： H01L33/46 , H01L33/10 , H01L33/38 , H01L33/42 , H01L33/50 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： A light-emitting diode having a distributed Bragg reflector is disclosed. The light-emitting diode includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first layer and the second layer. A first distributed Bragg reflector (DBR) is arranged on a second surface of the substrate opposite to the first surface, the first DBR to reflect light emitted from the light-emitting structure. The first DBR has a reflectivity of at least 90% with respect to light of a first wavelength in a blue range, light of a second wavelength in a green range, and light of a third wavelength in a red range. The first DBR has a laminate structure having an alternately stacked SiO 2 layer and Nb 2 O 5 layer.
摘要翻译：公开了一种具有分布式布拉格反射器的发光二极管。发光二极管包括布置在基板的第一表面上的发光结构，所述发光结构包括第一半导体层，第二半导体层和介于第一层和第二层之间的有源层。第一分布式布拉格反射器（DBR）布置在与第一表面相反的第二表面上，第一DBR用于反射从发光结构发射的光。第一DBR相对于蓝色范围内的第一波长的光，绿色范围的第二波长的光和红色范围的第三波长的光，具有至少90％的反射率。第一DBR具有层叠结构，其具有交替层叠的SiO 2层和Nb 2 O 5层。

4. 发明申请

WO2012026695A3 LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY 审中-公开
标题翻译：提高发光效率的发光二极管
公开(公告)号：WO2012026695A3
公开(公告)日：2012-05-31
申请号：PCT/KR2011005872
申请日：2011-08-11
申请人： SEOUL OPTO DEVICE CO LTD , YANG JEONG HEE , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , OH SANG HYUN , SUH DUK IL , LEE KEUM JU , LEE JIN WOONG , JEONG DA YEON
发明人： YANG JEONG HEE , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , OH SANG HYUN , SUH DUK IL , LEE KEUM JU , LEE JIN WOONG , JEONG DA YEON
IPC分类号： H01L33/36
CPC分类号： H01L33/385 , H01L33/20 , H01L33/38 , H01L33/42 , H01L2933/0091
摘要： xemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer. A first pad extension extends from the first electrode pad and a second pad extension extends from each of the two second electrode pads.
摘要翻译：本发明的示例性实施例涉及发光二极管。根据本发明示例性实施例的发光二极管包括具有第一侧边缘和第二侧边缘的基板以及布置在基板上的发光结构。发光结构包括第一导电型半导体层，有源层和第二导电型半导体层。包括凹部和凸部的透明电极层被布置在第二导电类型半导体层上。第一电极焊盘接触第一导电型半导体层的上表面并位于第一侧边缘的中心附近。两个第二电极焊盘位于第二侧边的相对远端附近以向第二导电类型半导体层供应电流。第一焊盘延伸部从第一电极焊盘延伸并且第二焊盘延伸部从两个第二电极焊盘中的每一个延伸。

5. 发明申请

WO2012015153A3 LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR 审中-公开
标题翻译：具有分布式布拉格反射器的发光二极管
公开(公告)号：WO2012015153A3
公开(公告)日：2012-04-19
申请号：PCT/KR2011003266
申请日：2011-05-02
申请人： SEOUL OPTO DEVICE CO LTD , SUH DUK IL , KIM JAE MOO , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , OH SANG HYUN , LEE JIN WOONG
发明人： SUH DUK IL , KIM JAE MOO , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , OH SANG HYUN , LEE JIN WOONG
IPC分类号： H01L33/10 , H01L33/46
CPC分类号： H01L33/46 , H01L33/10 , H01L33/38 , H01L33/42 , H01L33/50 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： A light-emitting diode having a distributed Bragg reflector is disclosed. The light-emitting diode includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first layer and the second layer. A first distributed Bragg reflector (DBR) is arranged on a second surface of the substrate opposite to the first surface, the first DBR to reflect light emitted from the light-emitting structure. The first DBR has a reflectivity of at least 90% with respect to light of a first wavelength in a blue range, light of a second wavelength in a green range, and light of a third wavelength in a red range. The first DBR has a laminate structure having an alternately stacked SiO2 layer and Nb2O5 layer.
摘要翻译：公开了具有分布式布拉格反射器的发光二极管。发光二极管包括布置在衬底的第一表面上的发光结构，该发光结构包括第一半导体层，第二半导体层以及介于第一层和第二层之间的有源层。第一分布布拉格反射器（DBR）布置在基板的与第一表面相对的第二表面上，第一DBR反射从发光结构发射的光。第一DBR相对于蓝色范围中的第一波长的光，绿色范围中的第二波长的光和红色范围中的第三波长的光具有至少90％的反射率。第一DBR具有交替堆叠的SiO 2层和Nb 2 O 5层的层压结构。

6. 发明申请

WO2012026695A2 LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY 审中-公开
标题翻译：发光二极管具有提高的光效
公开(公告)号：WO2012026695A2
公开(公告)日：2012-03-01
申请号：PCT/KR2011/005872
申请日：2011-08-11
申请人： SEOUL OPTO DEVICE CO., LTD. , YANG, Jeong Hee , KIM, Kyoung Wan , YOON, Yeo Jin , KIM, Ye Seul , OH, Sang Hyun , SUH, Duk Il , LEE, Keum Ju , LEE, Jin Woong , JEONG, Da Yeon
发明人： YANG, Jeong Hee , KIM, Kyoung Wan , YOON, Yeo Jin , KIM, Ye Seul , OH, Sang Hyun , SUH, Duk Il , LEE, Keum Ju , LEE, Jin Woong , JEONG, Da Yeon
IPC分类号： H01L33/36
CPC分类号： H01L33/385 , H01L33/20 , H01L33/38 , H01L33/42 , H01L2933/0091
摘要： xemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer. A first pad extension extends from the first electrode pad and a second pad extension extends from each of the two second electrode pads.
摘要翻译：本发明的实施例涉及发光二极管。根据本发明的示例性实施例的发光二极管包括具有第一侧边缘和第二侧边缘的基板和布置在基板上的发光结构。发光结构包括第一导电型半导体层，有源层和第二导电型半导体层。在第二导电型半导体层上配置有包含凹部和凸部的透明电极层。第一电极焊盘接触第一导电类型半导体层的上表面并且位于第一侧边缘的中心附近。两个第二电极焊盘位于第二侧边缘的相对的远端附近，以向第二导电类型半导体层提供电流。第一焊盘延伸部从第一电极焊盘延伸，并且第二焊盘延伸部从两个第二电极焊盘中的每一个延伸。

7. 发明申请

WO2011083923A3 LIGHT EMITTING DIODE HAVING ELECTRODE PADS 审中-公开
标题翻译：具有电极垫的发光二极管
公开(公告)号：WO2011083923A3
公开(公告)日：2011-09-29
申请号：PCT/KR2010009008
申请日：2010-12-16
申请人： SEOUL OPTO DEVICE CO LTD , SEO WON CHUL , KAL DAE SUNG , YE KYUNG HEE , KIM KYOUNG WAN , YOON YEO JIN
发明人： SEO WON CHUL , KAL DAE SUNG , YE KYUNG HEE , KIM KYOUNG WAN , YOON YEO JIN
IPC分类号： H01L33/36 , H01L33/38
CPC分类号： H01L33/387 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
摘要翻译：本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电类型半导体层。

8. 发明申请

WO2011074768A1 LIGHT EMITTING DIODE HAVING ELECTRODE PADS 审中-公开
标题翻译：具有电极垫的发光二极管
公开(公告)号：WO2011074768A1
公开(公告)日：2011-06-23
申请号：PCT/KR2010/006960
申请日：2010-10-12
申请人： SEOUL OPTO DEVICE CO., LTD. , KIM, Kyoung Wan , YANG, Jeong Hee , YOON, Yeo Jin
发明人： KIM, Kyoung Wan , YANG, Jeong Hee , YOON, Yeo Jin
IPC分类号： H01L33/38 , H01L33/36
CPC分类号： H01L33/38 , H01L33/20 , H01L33/382 , H01L33/44
摘要： Disclosed is a light emitting diode. The light emitting diode includes: a substrate, a first conductive type semiconductor layer on the substrate, a second conductive type semiconductor layer on the first conductive type semiconductor layer, an active layer interposed between the first and second conductive type semiconductor layers, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad on the first conductive type semiconductor layer, and an insulation layer interposed between the first conductive type semiconductor layer and the second electrode pad and electrically insulating the second electrode pad from the first conductive type semiconductor layer. The second electrode pad is formed on the first conductive type semiconductor layer, thereby preventing current crowding and optical loss caused by electrode pads.
摘要翻译：公开了一种发光二极管。发光二极管包括：衬底，衬底上的第一导电类型半导体层，第一导电类型半导体层上的第二导电类型半导体层，介于第一和第二导电类型半导体层之间的有源层，第一电极电连接到第一导电类型半导体层的第二电极焊盘，第一导电类型半导体层上的第二电极焊盘以及介于第一导电类型半导体层和第二电极焊盘之间的绝缘层，并且将第二电极焊盘与第一导电类型半导体层电连接导电型半导体层。第二电极焊盘形成在第一导电类型半导体层上，从而防止由电极焊盘引起的电流拥挤和光损耗。

9. 发明申请

WO2011083923A2 LIGHT EMITTING DIODE HAVING ELECTRODE PADS 审中-公开
标题翻译：具有电极垫的发光二极管
公开(公告)号：WO2011083923A2
公开(公告)日：2011-07-14
申请号：PCT/KR2010/009008
申请日：2010-12-16
申请人： SEOUL OPTO DEVICE CO., LTD. , SEO, Won Chul , KAL, Dae Sung , YE, Kyung Hee , KIM, Kyoung Wan , YOON, Yeo Jin
发明人： SEO, Won Chul , KAL, Dae Sung , YE, Kyung Hee , KIM, Kyoung Wan , YOON, Yeo Jin
IPC分类号： H01L33/36 , H01L33/38
CPC分类号： H01L33/387 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
摘要翻译：本发明的示例性实施例涉及包括衬底，布置在衬底上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层和第二导电类型半导体层之间;第一电极焊盘，电连接到第一导电类型半导体层;第二电极焊盘，设置在第二导电类型半导体层上;绝缘层，设置在第二导电类型半导体层导电型半导体层和第二电极焊盘;以及至少一个上延伸部分，电连接到第二电极焊盘，至少一个上延伸部分电连接到第二导电类型半导体层。

10. 发明申请

WO2012173416A3 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MENUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制作方法
公开(公告)号：WO2012173416A3
公开(公告)日：2013-03-28
申请号：PCT/KR2012004712
申请日：2012-06-15
申请人： SEOUL OPTO DEVICE CO LTD , SUH DUCK II , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , KIM JI HYE
发明人： SUH DUCK II , KIM KYOUNG WAN , YOON YEO JIN , KIM YE SEUL , KIM JI HYE
IPC分类号： H01L33/20 , H01L33/22
CPC分类号： H01L33/20 , H01L33/0095 , H01L33/22 , H01L33/32
摘要： This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation.
摘要翻译：本发明涉及一种具有优异的侧向光提取效率的半导体发光器件及其制造方法。半导体发光器件包括蓝宝石衬底和形成在蓝宝石衬底的上表面上的发光结构，并且包括多个氮化物外延层，其包括产生光的有源层，其中发光结构的至少一个侧表面形成为相对于蓝宝石衬底的上表面产生锐角的倾斜表面。在一些实施例中，可以使用激光照射在蓝宝石衬底的至少一个侧表面上在水平方向上形成至少一个修改区域。

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