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1. 发明申请

WO2020026081A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：WO2020026081A1
公开(公告)日：2020-02-06
申请号：PCT/IB2019/056307
申请日：2019-07-24
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： KOEZUKA, Junichi , OKAZAKI, Kenichi , HOSAKA, Yasuharu , OBONAI, Toshimitsu , NAKAZAWA, Yasutaka , YASUMOTO, Seiji , YAMAZAKI, Shunpei
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/336 , H01L51/50 , H05B33/14
摘要： A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. A semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The second insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The first insulating film, the second insulating film, and the third insulating film each contain an oxide. The first insulating film includes a portion in contact with the semiconductor layer. The semiconductor layer contains indium, gallium, and oxygen and includes a region with an indium content percentage higher than a gallium content percentage.

2. 发明申请

WO2017212363A1 SPUTTERING APPARATUS, SPUTTERING TARGET, AND METHOD FOR FORMING SEMICONDUCTOR FILM WITH THE SPUTTERING APPARATUS 审中-公开
标题翻译：溅射装置，溅射靶以及用溅射装置形成半导体膜的方法
公开(公告)号：WO2017212363A1
公开(公告)日：2017-12-14
申请号：PCT/IB2017/053076
申请日：2017-05-25
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： WATANABE, Masahiro , HANDA, Takuya , HOSAKA, Yasuharu , OKAZAKI, Kenichi , YAMAZAKI, Shunpei
IPC分类号： H01L21/363 , C23C14/34 , H01L29/786
CPC分类号： H01L21/02631 , C23C14/086 , C23C14/3407 , C23C14/3457 , C23C14/54 , C23C14/564 , C23C14/566 , G02F1/1303 , G02F1/134309 , G02F1/1368 , H01J37/3426 , H01L21/02565 , H01L21/67017 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/68764 , H01L27/3262 , H01L29/66969 , H01L29/78633 , H01L29/78648 , H01L29/7869
摘要： To provide a sputtering apparatus capable of forming a semiconductor film in which impurities such as hydrogen or water are reduced. The sputtering apparatus is capable of forming a semiconductor film and includes a deposition chamber, a gas supply device connected to the deposition chamber, a gas refining device connected to the gas supply device, a vacuum pump for evacuating the deposition chamber, a target disposed in the deposition chamber, and a cathode disposed to face the target. The gas supply device is configured to supply at least one of an argon gas, an oxygen gas, and a nitrogen gas. The partial pressure of hydrogen molecules is lower than or equal to 0.01 Pa and the partial pressure of water molecules is lower than or equal to 0.0001 Pa in the deposition chamber.
摘要翻译：为了提供能够形成其中诸如氢或水等杂质减少的半导体膜的溅射装置。溅射设备能够形成半导体膜并且包括沉积室，连接到沉积室的气体供应装置，连接到气体供应装置的气体精制设备，用于抽空沉积室的真空泵，设置在沉积室和设置成面向靶的阴极。气体供应装置被构造成供应氩气，氧气和氮气中的至少一种。氢分子的分压低于或等于0.01Pa，并且在沉积室中水分子的分压低于或等于0.0001Pa。

3. 发明申请

WO2017199130A1 COMPOSITE OXIDE SEMICONDUCTOR AND TRANSISTOR 审中-公开
标题翻译：复合氧化物半导体和晶体管
公开(公告)号：WO2017199130A1
公开(公告)日：2017-11-23
申请号：PCT/IB2017/052714
申请日：2017-05-10
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , HOSAKA, Yasuharu , SHIMA, Yukinori , KOEZUKA, Junichi , OKAZAKI, Kenichi
IPC分类号： H01L29/786 , C23C14/08
CPC分类号： H01L29/24 , H01L29/0692 , H01L29/1037 , H01L29/42384 , H01L29/4908 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： A novel material is provided. A composite oxide semiconductor includes a first region and a second region. The first region contains indium. The second region contains an element M (the element M is one or more of Ga, Al, Hf, Y, and Sn). The first region and the second region are arranged in a mosaic pattern. The composite oxide semiconductor further includes a third region. The element M is gallium. The first region contains indium oxide or indium zinc oxide. The second region contains gallium oxide or gallium zinc oxide. The third region contains zinc oxide.
摘要翻译：
提供了一种新型材料。复合氧化物半导体包括第一区域和第二区域。第一个区域包含铟。第二区域包含元素M（元素M是Ga，Al，Hf，Y和Sn中的一种或多种）。第一区域和第二区域以马赛克图案排列。复合氧化物半导体还包括第三区域。元素M是镓。第一区域包含氧化铟或氧化铟锌。第二区域含有氧化镓或氧化镓锌。第三个区域含有氧化锌。

4. 发明申请

WO2017115214A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体装置和包括半导体装置的显示装置
公开(公告)号：WO2017115214A1
公开(公告)日：2017-07-06
申请号：PCT/IB2016/057801
申请日：2016-12-20
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： MIYAKE, Hiroyuki , OKAZAKI, Kenichi , HOSAKA, Yasuharu , SHIMA, Yukinori
IPC分类号： H01L29/786 , H01L21/336 , H01L51/50
CPC分类号： H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/045 , H01L29/24 , H01L29/66969 , H01L29/7782 , H01L29/7786 , H01L29/78606 , H01L29/78648 , H01L29/7869 , H01L29/78696 , H01L51/005
摘要： Provided is a novel semiconductor device. The semiconductor device comprises a first transistor and a second transistor. The first transistor comprises a first gate electrode; a first insulating film over the first gate electrode; a first oxide semiconductor film over the first insulating film; a first source electrode and a first drain electrode over the first oxide semiconductor film; a second insulating film over the first oxide semiconductor film, the first source electrode, and the first drain electrode; and a second gate electrode over the second insulating film. The second transistor comprises a first drain electrode; the second insulating film over the second drain electrode; a second oxide semiconductor film over the second insulating film; a second source electrode and a second drain electrode over the second oxide semiconductor film; a third insulating film over the second oxide semiconductor film, the second source electrode, and the second drain electrode; and a third gate electrode over the third insulating film. The first oxide semiconductor film partly overlaps with the second oxide semiconductor film.
摘要翻译：提供了一种新颖的半导体器件。该半导体器件包括第一晶体管和第二晶体管。第一晶体管包括第一栅电极; 在第一栅电极上的第一绝缘膜; 在第一绝缘膜上的第一氧化物半导体膜; 在所述第一氧化物半导体膜上的第一源电极和第一漏电极; 在第一氧化物半导体膜，第一源电极和第一漏电极之上的第二绝缘膜; 以及在第二绝缘膜上的第二栅电极。第二晶体管包括第一漏电极; 在第二漏电极上的第二绝缘膜; 在第二绝缘膜上的第二氧化物半导体膜; 所述第二氧化物半导体膜上的第二源电极和第二漏电极; 在所述第二氧化物半导体膜，所述第二源电极和所述第二漏电极之上的第三绝缘膜; 以及在第三绝缘膜上的第三栅电极。第一氧化物半导体膜部分地与第二氧化物半导体膜重叠。

5. 发明申请

WO2013111756A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：WO2013111756A1
公开(公告)日：2013-08-01
申请号：PCT/JP2013/051229
申请日：2013-01-16
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOEZUKA, Junichi , OKAZAKI, Kenichi , IKEYAMA, Terumasa , TOCHIBAYASHI, Katsuaki
发明人： YAMAZAKI, Shunpei , KOEZUKA, Junichi , OKAZAKI, Kenichi , IKEYAMA, Terumasa , TOCHIBAYASHI, Katsuaki
IPC分类号： H01L21/336 , H01L27/146 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L29/7869 , H01L21/385 , H01L29/045 , H01L29/4908 , H01L29/66969 , H01L29/78606
摘要： A highly reliable semiconductor device including a transistor using an oxide semiconductor is provided. In a semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a first insulating layer is formed in contact with the oxide semiconductor layer, and an oxygen doping treatment is performed thereon, whereby the first insulating layer is made to contain oxygen in excess of the stoichiometric composition. The formation of the second insulating layer over the first insulating layer enables excess oxygen included in the first insulating layer to be supplied efficiently to the oxide semiconductor layer. Accordingly, the highly reliable semiconductor device with stable electric characteristics can be provided.
摘要翻译：提供了包括使用氧化物半导体的晶体管的高度可靠的半导体器件。在包括具有氧化物半导体层的底栅晶体管的半导体器件中，形成与氧化物半导体层接触的第一绝缘层，并在其上进行氧掺杂处理，由此使第一绝缘层含有氧过量的化学计量组成。在第一绝缘层上形成第二绝缘层使得能够有效地向氧化物半导体层提供包括在第一绝缘层中的过量的氧。因此，可以提供具有稳定电特性的高度可靠的半导体器件。

6. 发明申请

WO2017163146A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开
标题翻译：半导体器件和包括该器件的显示器件
公开(公告)号：WO2017163146A1
公开(公告)日：2017-09-28
申请号：PCT/IB2017/051456
申请日：2017-03-14
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , KOEZUKA, Junichi , OKAZAKI, Kenichi , SHIMA, Yukinori , MATSUDA, Shinpei , BABA, Haruyuki , HONDA, Ryunosuke
IPC分类号： H01L21/336 , C23C14/08 , H01L21/363 , H01L21/8234 , H01L21/8238 , H01L21/8242 , H01L27/088 , H01L27/092 , H01L27/108 , H01L29/786
摘要： To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.
摘要翻译：为了提高包括氧化物半导体膜的晶体管中的场效应迁移率和可靠性，一种半导体器件包括具有氧化物半导体膜的晶体管。所述晶体管包括：栅极电压高于0V且低于或等于10V的晶体管的场效应迁移率的最大值大于或等于40且小于150的区域; 阈值电压高于或等于-1V且低于或等于1V的区域; 以及S值小于0.3 V / decade的区域。

7. 发明申请

WO2017153882A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体装置，其制造方法以及包含该半导体装置的显示装置
公开(公告)号：WO2017153882A1
公开(公告)日：2017-09-14
申请号：PCT/IB2017/051280
申请日：2017-03-06
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , KOEZUKA, Junichi , OKAZAKI, Kenichi , JINTYOU, Masami , SHIMA, Yukinori
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L51/50 , H05B33/14
摘要： To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first to third oxide semiconductor films contain the same element. The second oxide semiconductor film includes a region where the crystallinity is lower than the crystallinity of one or both of the first oxide semiconductor film and the third oxide semiconductor film.
摘要翻译：为了提高包括氧化物半导体膜的晶体管的场效应迁移率和可靠性，提供了一种包括氧化物半导体膜的半导体器件。半导体器件包括第一绝缘膜，在第一绝缘膜上的氧化物半导体膜，在氧化物半导体膜上的第二绝缘膜和第三绝缘膜以及在第二绝缘膜上的栅电极。氧化物半导体膜包括第一氧化物半导体膜，第一氧化物半导体膜上的第二氧化物半导体膜以及第二氧化物半导体膜上的第三氧化物半导体膜。第一至第三氧化物半导体膜含有相同的元素。第二氧化物半导体膜包括结晶度低于第一氧化物半导体膜和第三氧化物半导体膜之一或两者的结晶度的区域。

8. 发明申请

WO2016125051A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2016125051A1
公开(公告)日：2016-08-11
申请号：PCT/IB2016/050417
申请日：2016-01-28
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： KOEZUKA, Junichi , OKAZAKI, Kenichi , KUROSAKI, Daisuke , JINTYOU, Masami , YAMAZAKI, Shunpei
IPC分类号： H01L21/336 , G02F1/1368 , H01L21/265 , H01L21/28 , H01L21/477 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/1248 , H01L27/127 , H01L29/66969 , H01L29/78606 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： A method for manufacturing a highly reliable semiconductor device is provided. The method includes the steps of: forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; not performing a process at a temperature higher than the first temperature, but depositing a material to be source and drain electrodes by a sputtering method; processing the material to form the source and drain electrodes; forming a protective insulating film, and then forming a first barrier film; adding excess oxygen or oxygen radicals to the protective insulating film through the first barrier film; performing heat treatment at a second temperature lower than 400 deg C to diffuse the excess oxygen or oxygen radicals into the oxide semiconductor film; and removing part of the first barrier film and part of the protective insulating film by wet etching, and then forming a second barrier film.
摘要翻译：提供一种用于制造高度可靠的半导体器件的方法。该方法包括以下步骤：在第一温度下形成氧化物半导体膜; 将氧化物半导体膜加工成岛状; 在高于第一温度的温度下不进行处理，而是通过溅射法沉积作为源极和漏极的材料; 处理材料以形成源极和漏极; 形成保护绝缘膜，然后形成第一阻挡膜; 通过第一阻挡膜向保护绝缘膜中加入过量的氧或氧自由基; 在低于400℃的第二温度下进行热处理以将过量的氧或氧自由基扩散到氧化物半导体膜中; 并通过湿法蚀刻除去第一阻挡膜和保护绝缘膜的一部分的一部分，然后形成第二阻挡膜。

9. 发明申请

WO2014185480A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2014185480A1
公开(公告)日：2014-11-20
申请号：PCT/JP2014/062900
申请日：2014-05-08
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , MIYAKE, Hiroyuki , OKAZAKI, Kenichi , HAYAKAWA, Masahiko , MATSUDA, Shinpei
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L21/28 , H01L29/41 , H01L29/423 , H01L29/49 , H01L51/50 , H05B33/14
CPC分类号： H01L27/1225 , G02F1/134309 , G02F1/1368 , H01L27/1237 , H01L27/124 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device which includes an oxide semiconductor and in which formation of a parasitic channel due to a gate BT stress is suppressed is provided. Further, a semiconductor device including a transistor having excellent electrical characteristics is provided. The semiconductor device includes a transistor having a dual-gate structure in which an oxide semiconductor film is provided between a first gate electrode and a second gate electrode; gate insulating films are provided between the oxide semiconductor film and the first gate electrode and between the oxide semiconductor film and the second gate electrode; and in the channel width direction of the transistor, the first or second gate electrode faces a side surface of the oxide semiconductor film with the gate insulating film between the oxide semiconductor film and the first or second gate electrode.
摘要翻译：提供了一种半导体器件，其包括氧化物半导体，并且其中抑制了由于栅极BT应力而形成的寄生沟道。此外，提供了包括具有优异电特性的晶体管的半导体器件。半导体器件包括具有双栅极结构的晶体管，其中氧化物半导体膜设置在第一栅电极和第二栅电极之间; 在所述氧化物半导体膜和所述第一栅电极之间以及所述氧化物半导体膜和所述第二栅电极之间设置栅绝缘膜; 并且在晶体管的沟道宽度方向上，第一或第二栅电极与氧化物半导体膜与第一或第二栅极之间的栅极绝缘膜面对氧化物半导体膜的侧面。

10. 发明申请

WO2012169449A1 SPUTTERING TARGET, METHOD FOR MANUFACTURING SPUTTERING TARGET, AND METHOD FOR FORMING THIN FILM 审中-公开
标题翻译：溅射目标，制造溅射目标的方法和形成薄膜的方法
公开(公告)号：WO2012169449A1
公开(公告)日：2012-12-13
申请号：PCT/JP2012/064341
申请日：2012-05-28
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , MARUYAMA, Tetsunori , IMOTO, Yuki , SATO, Hitomi , WATANABE, Masahiro , MASHIYAMA, Mitsuo , OKAZAKI, Kenichi , NAKASHIMA, Motoki , SHIMAZU, Takashi
发明人： YAMAZAKI, Shunpei , MARUYAMA, Tetsunori , IMOTO, Yuki , SATO, Hitomi , WATANABE, Masahiro , MASHIYAMA, Mitsuo , OKAZAKI, Kenichi , NAKASHIMA, Motoki , SHIMAZU, Takashi
IPC分类号： C23C14/34 , H01L21/363
CPC分类号： C23C14/08 , B28B11/243 , C04B35/453 , C04B35/64 , C04B2235/3284 , C04B2235/3286 , C04B2235/76 , C23C14/086 , C23C14/3414 , C23C14/345 , H01L21/02565 , H01L21/02631 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
摘要翻译：已经有使用氧化物半导体形成的晶体管的可靠性与使用非晶硅形成的晶体管的可靠性差。因此，在本发明中，制造了包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。通过混合原料形成靶，使其组成比可以得到晶体结构。

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