专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2015097595A1 LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：WO2015097595A1
公开(公告)日：2015-07-02
申请号：PCT/IB2014/066992
申请日：2014-12-17
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： MIYAKE, Hiroyuki , KOEZUKA, Junichi , JINTYOU, Masami , SHIMA, Yukinori , YAMAZAKI, Shunpei
IPC分类号： G09G3/30 , G09G3/20 , H01L51/50
CPC分类号： H01L27/1225 , H01L27/1237 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/3262 , H01L29/24 , H01L29/7869
摘要： A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions.
摘要翻译：提供能够抑制像素之间的亮度变化的发光装置。发光装置包括像素和第一和第二电路。第一电路具有产生包括从像素提取的电流值的信号的功能。第二电路具有通过该信号校正图像信号的功能。像素至少包括发光元件和第一和第二晶体管。第一晶体管具有通过图像信号控制向发光元件的电流的供给的功能。第二晶体管具有控制从像素提取电流的功能。第一和第二晶体管中的每一个的半导体膜包括与栅极重叠的第一半导体区域，与源极或漏极接触的第二半导体区域以及第一和第二半导体区域之间的第三半导体区域。

2. 发明申请

WO2015083037A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2015083037A1
公开(公告)日：2015-06-11
申请号：PCT/IB2014/066306
申请日：2014-11-25
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： KOEZUKA, Junichi , SHIMA, Yukinori , JINTYOU, Masami , HAMOCHI, Takashi , HIGANO, Satoshi , YAMAZAKI, Shunpei
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/532 , H01L51/50 , H05B33/14
CPC分类号： H01L29/7869 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , G02F2001/136295 , H01L23/53233 , H01L27/1225 , H01L27/124 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/4966 , H01L29/786 , H01L2924/0002 , H01L2924/00
摘要： To provide a novel semiconductor device which includes a transistor and a metal film containing Cu for a wiring, a signal line, or the like. The semiconductor device includes a first wiring, a second wiring, a first transistor, and a second transistor. The first wiring is electrically connected to a source or a drain of the first transistor, and the second wiring is electrically connected to a gate of the second transistor. The first wiring and the second wiring each include a Cu-X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). The Cu-X alloy film in the first wiring is connected to the Cu-X alloy film in the second wiring.
摘要翻译：提供一种新颖的半导体器件，其包括晶体管和含有Cu的金属膜用于布线，信号线等。半导体器件包括第一布线，第二布线，第一晶体管和第二晶体管。第一布线电连接到第一晶体管的源极或漏极，并且第二布线电连接到第二晶体管的栅极。第一布线和第二布线均包括Cu-X合金膜（X是Mn，Ni，Cr，Fe，Co，Mo，Ta或Ti）。第一布线中的Cu-X合金膜与第二布线中的Cu-X合金膜连接。

3. 发明申请

WO2014014039A1 DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE DISPLAY DEVICE 审中-公开
标题翻译：显示装置和包括显示装置的电子装置
公开(公告)号：WO2014014039A1
公开(公告)日：2014-01-23
申请号：PCT/JP2013/069456
申请日：2013-07-10
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： HOSAKA, Yasuharu , SHIMA, Yukinori , OKAZAKI, Kenichi , YAMAZAKI, Shunpei
IPC分类号： G09F9/30 , G02F1/135 , G02F1/1368 , H01L21/336 , H01L27/32 , H01L29/786 , H01L51/50 , H05B33/04 , H05B33/14 , H05B33/22
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/133512 , G02F1/1337 , G02F1/13454 , H01L27/1214 , H01L27/1225 , H01L27/1248
摘要： The display device comprises a pixel portion(142) and a driver circuit portion(140). The pixel portion comprises a first transistor(101), a first insulating film(114) over the first transistor, a second insulating film(116) over the first insulating film, a third insulating film(120) over the second insulating film, a first electrode(122) over the third insulating film and a first alignment film(124) over the first electrode. The driver circuit portion comprises a second transistor(103), the first insulating film over the second transistor, the second insulating film over the first insulating film and the first alignment film over the second insulating film. The first insulating film comprises an inorganic insulating material. The second insulating film comprises an organic insulating material. The third insulating film comprises an inorganic insulating material. The first alignment film is entirely in contact with the second insulating film in the driver circuit portion.
摘要翻译：显示装置包括像素部分（142）和驱动器电路部分（140）。像素部分包括第一晶体管（101），第一晶体管上的第一绝缘膜（114），第一绝缘膜上的第二绝缘膜（116），第二绝缘膜上的第三绝缘膜（120）第一绝缘膜上的第一电极（122）和第一电极上的第一取向膜（124）。驱动器电路部分包括第二晶体管（103），第二晶体管上的第一绝缘膜，第一绝缘膜上的第二绝缘膜和第二绝缘膜上的第一取向膜。第一绝缘膜包括无机绝缘材料。第二绝缘膜包括有机绝缘材料。第三绝缘膜包括无机绝缘材料。第一取向膜与驱动电路部分中的第二绝缘膜完全接触。

4. 发明申请

WO2013180040A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2013180040A1
公开(公告)日：2013-12-05
申请号：PCT/JP2013/064555
申请日：2013-05-20
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , KOEZUKA, Junichi , SHIMA, Yukinori , TOKUNAGA, Hajime
IPC分类号： H01L29/786 , C23C14/34 , G02F1/1368 , H01L51/50 , H05B33/14
CPC分类号： H01L29/7869 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L29/24 , H01L29/42356 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66969 , H01L29/78696
摘要： A highly reliable semiconductor device including an oxide semiconductor is provided by preventing a change in its electrical characteristics. A semiconductor device which includes a first oxide semiconductor layer which is in contact with a source electrode layer and a drain electrode layer and a second oxide semiconductor layer which serves as a main current path (channel) of a transistor is provided. The first oxide semiconductor layer serves as a buffer layer for preventing a constituent element of the source and drain electrode layers from diffusing into the channel. By providing the first oxide semiconductor layer, it is possible to prevent diffusion of the constituent element into an interface between the first oxide semiconductor layer and the second oxide semiconductor layer and into the second oxide semiconductor layer.
摘要翻译：通过防止其电特性的改变来提供包括氧化物半导体的高度可靠的半导体器件。提供一种半导体器件，其包括与源电极层和漏电极层接触的第一氧化物半导体层和用作晶体管的主电流路径（沟道）的第二氧化物半导体层。第一氧化物半导体层用作用于防止源电极层和漏极电极层的构成元素扩散到沟道中的缓冲层。通过设置第一氧化物半导体层，可以防止构成元素扩散到第一氧化物半导体层和第二氧化物半导体层之间的界面中并进入第二氧化物半导体层。

5. 发明申请

WO2017163146A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开
标题翻译：半导体器件和包括该器件的显示器件
公开(公告)号：WO2017163146A1
公开(公告)日：2017-09-28
申请号：PCT/IB2017/051456
申请日：2017-03-14
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , KOEZUKA, Junichi , OKAZAKI, Kenichi , SHIMA, Yukinori , MATSUDA, Shinpei , BABA, Haruyuki , HONDA, Ryunosuke
IPC分类号： H01L21/336 , C23C14/08 , H01L21/363 , H01L21/8234 , H01L21/8238 , H01L21/8242 , H01L27/088 , H01L27/092 , H01L27/108 , H01L29/786
摘要： To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.
摘要翻译：为了提高包括氧化物半导体膜的晶体管中的场效应迁移率和可靠性，一种半导体器件包括具有氧化物半导体膜的晶体管。所述晶体管包括：栅极电压高于0V且低于或等于10V的晶体管的场效应迁移率的最大值大于或等于40且小于150的区域; 阈值电压高于或等于-1V且低于或等于1V的区域; 以及S值小于0.3 V / decade的区域。

6. 发明申请

WO2017153882A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体装置，其制造方法以及包含该半导体装置的显示装置
公开(公告)号：WO2017153882A1
公开(公告)日：2017-09-14
申请号：PCT/IB2017/051280
申请日：2017-03-06
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , KOEZUKA, Junichi , OKAZAKI, Kenichi , JINTYOU, Masami , SHIMA, Yukinori
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L51/50 , H05B33/14
摘要： To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first to third oxide semiconductor films contain the same element. The second oxide semiconductor film includes a region where the crystallinity is lower than the crystallinity of one or both of the first oxide semiconductor film and the third oxide semiconductor film.
摘要翻译：为了提高包括氧化物半导体膜的晶体管的场效应迁移率和可靠性，提供了一种包括氧化物半导体膜的半导体器件。半导体器件包括第一绝缘膜，在第一绝缘膜上的氧化物半导体膜，在氧化物半导体膜上的第二绝缘膜和第三绝缘膜以及在第二绝缘膜上的栅电极。氧化物半导体膜包括第一氧化物半导体膜，第一氧化物半导体膜上的第二氧化物半导体膜以及第二氧化物半导体膜上的第三氧化物半导体膜。第一至第三氧化物半导体膜含有相同的元素。第二氧化物半导体膜包括结晶度低于第一氧化物半导体膜和第三氧化物半导体膜之一或两者的结晶度的区域。

7. 发明申请

WO2017098369A1 OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE 审中-公开
标题翻译：氧化物半导体膜，半导体器件和显示装置
公开(公告)号：WO2017098369A1
公开(公告)日：2017-06-15
申请号：PCT/IB2016/057173
申请日：2016-11-29
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： KOEZUKA, Junichi , SHIMA, Yukinori , OBONAI, Toshimitsu , KANEMURA, Hiroshi , KUROSAKI, Daisuke
IPC分类号： H01L29/786 , G09F9/30 , H01L21/363
CPC分类号： H01L29/7869 , H01L21/02422 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/465 , H01L29/045 , H01L29/24 , H01L29/78696
摘要： An oxide semiconductor film contains In, M (M is Al, Ga, Y, or Sn), and Zn and includes a region with a film density higher than or equal to 6.3 g cm^-3 and lower than 6.5 g cm^-3. Alternatively, the oxide semiconductor film contains In, M (M is Al, Ga, Y, or Sn), and Zn and includes a region with etching at an etching rate higher than or equal to 10 nm min^-1 and lower than or equal to 45 nm min^-1 when a phosphoric acid aqueous solution obtained by diluting 85 vol percent phosphoric acid with water 100 times is used for etching.
摘要翻译：氧化物半导体膜包含In，M（M为Al，Ga，Y或Sn）和Zn，并且包括膜密度高于或等于6.3g / cm 3的区域并且低于6.5g / cm 3。或者，氧化物半导体膜包含In，M（M为Al，Ga，Y或Sn）和Zn，并且包括以高于或等于10nm min ^ -1且低于当用水稀释85体积％的磷酸100倍得到的磷酸水溶液用于蚀刻时，等于45nm min ^ -1。

8. 发明申请

WO2017199130A1 COMPOSITE OXIDE SEMICONDUCTOR AND TRANSISTOR 审中-公开
标题翻译：复合氧化物半导体和晶体管
公开(公告)号：WO2017199130A1
公开(公告)日：2017-11-23
申请号：PCT/IB2017/052714
申请日：2017-05-10
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： YAMAZAKI, Shunpei , HOSAKA, Yasuharu , SHIMA, Yukinori , KOEZUKA, Junichi , OKAZAKI, Kenichi
IPC分类号： H01L29/786 , C23C14/08
CPC分类号： H01L29/24 , H01L29/0692 , H01L29/1037 , H01L29/42384 , H01L29/4908 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： A novel material is provided. A composite oxide semiconductor includes a first region and a second region. The first region contains indium. The second region contains an element M (the element M is one or more of Ga, Al, Hf, Y, and Sn). The first region and the second region are arranged in a mosaic pattern. The composite oxide semiconductor further includes a third region. The element M is gallium. The first region contains indium oxide or indium zinc oxide. The second region contains gallium oxide or gallium zinc oxide. The third region contains zinc oxide.
摘要翻译：
提供了一种新型材料。复合氧化物半导体包括第一区域和第二区域。第一个区域包含铟。第二区域包含元素M（元素M是Ga，Al，Hf，Y和Sn中的一种或多种）。第一区域和第二区域以马赛克图案排列。复合氧化物半导体还包括第三区域。元素M是镓。第一区域包含氧化铟或氧化铟锌。第二区域含有氧化镓或氧化镓锌。第三个区域含有氧化锌。

9. 发明申请

WO2017115214A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体装置和包括半导体装置的显示装置
公开(公告)号：WO2017115214A1
公开(公告)日：2017-07-06
申请号：PCT/IB2016/057801
申请日：2016-12-20
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： MIYAKE, Hiroyuki , OKAZAKI, Kenichi , HOSAKA, Yasuharu , SHIMA, Yukinori
IPC分类号： H01L29/786 , H01L21/336 , H01L51/50
CPC分类号： H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/045 , H01L29/24 , H01L29/66969 , H01L29/7782 , H01L29/7786 , H01L29/78606 , H01L29/78648 , H01L29/7869 , H01L29/78696 , H01L51/005
摘要： Provided is a novel semiconductor device. The semiconductor device comprises a first transistor and a second transistor. The first transistor comprises a first gate electrode; a first insulating film over the first gate electrode; a first oxide semiconductor film over the first insulating film; a first source electrode and a first drain electrode over the first oxide semiconductor film; a second insulating film over the first oxide semiconductor film, the first source electrode, and the first drain electrode; and a second gate electrode over the second insulating film. The second transistor comprises a first drain electrode; the second insulating film over the second drain electrode; a second oxide semiconductor film over the second insulating film; a second source electrode and a second drain electrode over the second oxide semiconductor film; a third insulating film over the second oxide semiconductor film, the second source electrode, and the second drain electrode; and a third gate electrode over the third insulating film. The first oxide semiconductor film partly overlaps with the second oxide semiconductor film.
摘要翻译：提供了一种新颖的半导体器件。该半导体器件包括第一晶体管和第二晶体管。第一晶体管包括第一栅电极; 在第一栅电极上的第一绝缘膜; 在第一绝缘膜上的第一氧化物半导体膜; 在所述第一氧化物半导体膜上的第一源电极和第一漏电极; 在第一氧化物半导体膜，第一源电极和第一漏电极之上的第二绝缘膜; 以及在第二绝缘膜上的第二栅电极。第二晶体管包括第一漏电极; 在第二漏电极上的第二绝缘膜; 在第二绝缘膜上的第二氧化物半导体膜; 所述第二氧化物半导体膜上的第二源电极和第二漏电极; 在所述第二氧化物半导体膜，所述第二源电极和所述第二漏电极之上的第三绝缘膜; 以及在第三绝缘膜上的第三栅电极。第一氧化物半导体膜部分地与第二氧化物半导体膜重叠。

10. 发明申请

WO2017064590A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2017064590A1
公开(公告)日：2017-04-20
申请号：PCT/IB2016/055941
申请日：2016-10-05
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： KOEZUKA, Junichi , JINTYOU, Masami , SHIMA, Yukinori , HOSAKA, Yasuharu , NAKAZAWA, Yasutaka , HAMOCHI, Takashi , SATO, Takahiro , YAMAZAKI, Shunpei
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/0217 , H01L21/02274 , H01L21/383 , H01L23/291 , H01L23/3171 , H01L29/24 , H01L29/408 , H01L29/4908 , H01L29/7781 , H01L29/7782 , H01L29/7786 , H01L29/7869 , H01L29/78696
摘要： A change in electrical characteristics of a semiconductor device including an oxide semiconductor is prevented, and the reliability of the semiconductor device is improved. An oxide semiconductor is formed over a substrate; an insulator is formed over the oxide semiconductor; a metal oxide is formed over the insulator; a conductor is formed over the metal oxide; a portion of the oxide semiconductor is exposed by removing the conductor, the metal oxide, and the insulator over the oxide semiconductor; plasma treatment is performed on a surface of the exposed portion of the oxide semiconductor; and a nitride insulator is formed over the exposed portion of the oxide semiconductor and over the conductor. The plasma treatment is performed in a mixed atmosphere of an argon gas and a nitrogen gas.
摘要翻译：防止了包括氧化物半导体的半导体器件的电特性的变化，并且提高了半导体器件的可靠性。在衬底上形成氧化物半导体; 在氧化物半导体上形成绝缘体; 在绝缘体上形成金属氧化物; 在金属氧化物上形成导体; 通过去除氧化物半导体上的导体，金属氧化物和绝缘体来暴露部分氧化物半导体; 在氧化物半导体的暴露部分的表面上执行等离子体处理; 并且在氧化物半导体的暴露部分上以及导体上方形成氮化物绝缘体。等离子体处理在氩气和氮气的混合气氛中进行。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式