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    • 8. 发明申请
    • 3D STACKED NON-VOLATILE STORAGE PROGRAMMING TO CONDUCTIVE STATE
    • 3D堆叠非易失性存储编程到导电状态
    • WO2014074408A2
    • 2014-05-15
    • PCT/US2013/068041
    • 2013-11-01
    • SANDISK TECHNOLOGIES, INC.MIHNEA, AndreiCOSTA, XiyingZHANG, Yanli
    • MIHNEA, AndreiCOSTA, XiyingZHANG, Yanli
    • G11C11/56G11C16/10H01L27/115
    • G11C11/5671G11C16/0483G11C16/10H01L27/1157H01L27/11582
    • Programming NAND strings in a 3D stacked storage device to a conductive state is disclosed. Storage elements may be erased by raising their Vt and programmed by lowering their Vt. Programming may include applying a series of increasing voltages to selected bit lines until the selected memory cell is programmed. Unselected bit lines may be held at about ground, or close to ground. The selected word line may be grounded, or be held close to ground. Unselected word lines between the selected word line and the bit line may receive about the selected bit line voltage. Unselected word lines between the source line and the selected word line may receive about half the selected bit line voltage. Programming may be achieved without boosting channels of unselected NAND strings to inhibit them from programming. Therefore, program disturb associated with leakage of boosted channel potential may be avoided.
    • 公开了将3D堆叠存储设备中的NAND串编程为导通状态。 存储元件可以通过升高Vt并通过降低Vt进行编程而被擦除。编程可能包括对选定的位线施加一系列增加的电压,直到选定的存储单元被编程为止。 未选择的位线可以保持在大约地面或靠近地面。 所选择的字线可以接地,或者靠近地面。 所选择的字线和位线之间的未被选择的字线可以接收所选位线电压。 源极线和所选字线之间的未选字线可以接收大约一半的选定位线电压。 可以在不增加未选择的NAND串的通道以阻止它们编程的情况下实现编程。 因此,可以避免与提升的通道电位的泄漏相关的程序干扰。