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1. 发明申请

WO2007041423A9 VERTICAL PROFILE FIXING 审中-公开
公开(公告)号：WO2007041423A9
公开(公告)日：2007-04-12
申请号：PCT/US2006/038299
申请日：2006-09-29
申请人： LAM RESEARCH CORPORATION , SADJADI, S.M. Reza , CIRIGLIANO, Peter , KIM, Jisoo , HUANG, Zhisong , HUDSON, Eric A.
发明人： SADJADI, S.M. Reza , CIRIGLIANO, Peter , KIM, Jisoo , HUANG, Zhisong , HUDSON, Eric A.
IPC分类号： H01L21/311 , H01L21/027 , G03F7/40
摘要： A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.

2. 发明申请

WO2006096528A3 STABILIZED PHOTORESIST STRUCTURE FOR ETCHING PROCESS 审中-公开
公开(公告)号：WO2006096528A3
公开(公告)日：2006-09-14
申请号：PCT/US2006/007643
申请日：2006-03-02
申请人： LAM RESEARCH CORPORATION , SADJADI, S. M. Reza , HUDSON, Eric, A. , CIRIGLIANO, Peter , KIM, Ji Soo , HUANG, Zhisong
发明人： SADJADI, S. M. Reza , HUDSON, Eric, A. , CIRIGLIANO, Peter , KIM, Ji Soo , HUANG, Zhisong
IPC分类号： H01L21/027 , G03F7/40
摘要： A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.

3. 发明申请

WO2006130319A2 CRITICAL DIMENSION REDUCTION AND ROUGHNESS CONTROL 审中-公开
标题翻译：关键尺寸减少和粗糙度控制
公开(公告)号：WO2006130319A2
公开(公告)日：2006-12-07
申请号：PCT/US2006/018142
申请日：2006-05-10
申请人： LAM RESEARCH CORPORATION , LEE, Sangheon , CHOI, Dae-Han , KIM, Jisoo , CIRIGLIANO, Peter , HUANG, Zhisong , CHARATAN, Robert , SADJADI, S.M., Reza
发明人： LEE, Sangheon , CHOI, Dae-Han , KIM, Jisoo , CIRIGLIANO, Peter , HUANG, Zhisong , CHARATAN, Robert , SADJADI, S.M., Reza
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。控制层的开口打开，控制层突破性化学。特征被刻蚀到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比保形层蚀刻更耐腐蚀。

4. 发明申请

WO2007094957A1 INFINITELY SELECTIVE PHOTORESIST MASK ETCH 审中-公开
标题翻译：无限选择性光电隔离膜
公开(公告)号：WO2007094957A1
公开(公告)日：2007-08-23
申请号：PCT/US2007/002511
申请日：2007-01-30
申请人： LAM RESEARCH CORPORATION , KIM, Ji Soo , CIRIGLIANO, Peter , LEE, Sangheon , HEO, Dongho , CHOI, Daehan , SADJADI, S.M. Reza
发明人： KIM, Ji Soo , CIRIGLIANO, Peter , LEE, Sangheon , HEO, Dongho , CHOI, Daehan , SADJADI, S.M. Reza
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01L21/30655
摘要： A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.
摘要翻译：提供了一种用于将特征蚀刻到设置在不具有中间硬掩模的光致抗蚀剂掩模下方的蚀刻层中的方法。提供多个蚀刻循环。每个蚀刻循环包括提供沉积蚀刻阶段，其将特征蚀刻到蚀刻层中并将聚合物沉积在特征的侧壁上并在光致抗蚀剂上方，并提供去除沉积在侧壁上的聚合物的清洁相。

5. 发明申请

WO2010033434A2 SIDEWALL FORMING PROCESSES 审中-公开
标题翻译：侧壁成形工艺
公开(公告)号：WO2010033434A2
公开(公告)日：2010-03-25
申请号：PCT/US2009/056716
申请日：2009-09-11
申请人： LAM RESEARCH CORPORATION , CIRIGLIANO, Peter , ZHU, Helen , KIM, Ji Soo , SADJADI, S.M. Reza
发明人： CIRIGLIANO, Peter , ZHU, Helen , KIM, Ji Soo , SADJADI, S.M. Reza
IPC分类号： H01L21/3065
CPC分类号： H01L21/0337 , H01L21/31144 , H01L21/312
摘要： An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.
摘要翻译：提供在图案化的光刻胶掩模下面的蚀刻层。执行多个侧壁形成过程。每个侧壁形成过程包括通过执行多次循环沉积而在图案化的光刻胶掩模上沉积保护层。每个循环沉积至少包括用于在图案化的光刻胶掩模的表面上沉积沉积层的沉积阶段和用于在沉积层中成形垂直表面的轮廓成形阶段。每个侧壁形成工艺还包括用于选择性地蚀刻保护层相对于保护层的垂直表面的水平表面的突破蚀刻。之后，蚀刻蚀刻层以形成具有小于图案化光刻胶掩模中的特征的临界尺寸的临界尺寸的特征。

6. 发明申请

WO2006020344A1 METHOD FOR STRIPPING PHOTORESIST FROM ETCHED WAFER 审中-公开
标题翻译：从蚀刻波长剥离光刻胶的方法
公开(公告)号：WO2006020344A1
公开(公告)日：2006-02-23
申请号：PCT/US2005/025982
申请日：2005-07-20
申请人： LAM RESEARCH CORPORATION , HUDSON, Eric, A. , CIRIGLIANO, Peter
发明人： HUDSON, Eric, A. , CIRIGLIANO, Peter
IPC分类号： H01L21/311
CPC分类号： G03F7/427 , H01L21/31138
摘要： A method of forming a feature in a low-k (k 2 is provided. A plasma is formed from the stripping gas comprising CO 2 . The plasma from the stripping gas comprising CO 2 is used to strip the patterned photoresist mask.
摘要翻译：提供了在低k（k <3.0）电介质层中形成特征的方法。将低k电介质层放置在衬底上。将图案化的光致抗蚀剂掩模放置在低k电介质层上。至少一个特征被蚀刻到低k电介质层中。包含CO的汽提气体

7. 发明申请

WO2005122226A1 METHOD FOR PLASMA STRIPPING USING PERIODIC MODULATION OF GAS CHEMISTRY AND HYDROCARBON ADDITION 审中-公开
标题翻译：使用气体化学和碳氢化合物添加剂的周期性调节的等离子体分离方法
公开(公告)号：WO2005122226A1
公开(公告)日：2005-12-22
申请号：PCT/US2005/018784
申请日：2005-05-27
申请人： LAM RESEARCH CORPORATION , YUN, Seokmin , ZHU, Ji , CIRIGLIANO, Peter , LEE, Sangheon , CHOI, Thomas, S. , LOEWENHARDT, Peter , WILCOXSON, Mark, H. , SADJADI, Reza , HUDSON, Eric, A. , TIETZ, James, V.
发明人： YUN, Seokmin , ZHU, Ji , CIRIGLIANO, Peter , LEE, Sangheon , CHOI, Thomas, S. , LOEWENHARDT, Peter , WILCOXSON, Mark, H. , SADJADI, Reza , HUDSON, Eric, A. , TIETZ, James, V.
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76802 , H01L21/76829
摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase uses first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The stripping phase for stripping the photoresist mask uses a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.
摘要翻译：一种通过光刻胶蚀刻掩模在衬底上蚀刻低k电介质层中的特征的方法。执行气体调制的循环剥离工艺超过三个循环以剥离单个光致抗蚀剂掩模。气体调节循环汽提过程的每个循环包括进行保护层形成阶段和汽提阶段。保护层形成阶段使用具有沉积气体化学性质的第一气体化学，其中对于每个循环，保护层形成阶段在约0.005至10秒内进行。用于剥离光致抗蚀剂掩模的剥离阶段使用第二气体化学品，其使用剥离气体化学，其中第一气体化学物质不同于第二气体化学物质，其中蚀刻阶段在每个循环的约0.005至10秒内进行。

8. 发明申请

WO2006081233A2 CONFINEMENT RING DRIVE 审中-公开
标题翻译：限制环驱动
公开(公告)号：WO2006081233A2
公开(公告)日：2006-08-03
申请号：PCT/US2006/002459
申请日：2006-01-24
申请人： LAM RESEARCH CORPORATION , CIRIGLIANO, Peter
发明人： CIRIGLIANO, Peter
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： C23F4/00 , H01J37/32623 , H01L21/67069 , Y10S156/915
摘要： A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of confinement rings are separated by a space and each of the plurality of confinement rings have a plurality of holes defined therein. A plunger extending through aligned holes of corresponding confinement rings is provided. The plunger is moveable in a plane substantially orthogonal to the confinement rings. A proportional adjustment support is affixed to the plunger. The proportional adjustment support is configured to support the confinement rings, such that as the plunger moves in the plane, the space separating each of the plurality of confinement rings is proportionally adjusted, hi one embodiment the proportional adjustment support is a bellows sleeve. A semiconductor processing chamber and a method for confining a plasma in an etch chamber having a plurality of confinement rings are provided.
摘要翻译：提供了一种用于半导体处理室的限制组件。限制组件包括彼此设置的多个限制环。多个限制环中的每一个由空间分开，并且多个限制环中的每一个具有限定在其中的多个孔。提供了延伸穿过对应的限制环的对准孔的柱塞。柱塞可在基本上垂直于限制环的平面内移动。柱塞附加比例调节支架。比例调节支撑件构造成支撑约束环，使得当柱塞在平面中移动时，分离多个限制环中的每一个的空间成比例地调节。在一个实施例中，比例调节支撑件是波纹管套筒。提供半导体处理室和用于将等离子体限制在具有多个限制环的蚀刻室中的方法。

9. 发明申请

WO2009152036A1 ORGANIC ARC ETCH SELECTIVE FOR IMMERSION PHOTORESIST 审中-公开
标题翻译：有机电弧选择用于浸没光电子
公开(公告)号：WO2009152036A1
公开(公告)日：2009-12-17
申请号：PCT/US2009/046307
申请日：2009-06-04
申请人： LAM RESEARCH CORPORATION , ZHU, Helen, H. , CIRIGLIANO, Peter , SADJADI, S.M., Reza
发明人： ZHU, Helen, H. , CIRIGLIANO, Peter , SADJADI, S.M., Reza
IPC分类号： H01L21/3065 , H01L21/027
CPC分类号： H01L21/31138 , H01L21/31144
摘要： A method for forming etch features in an etch layer over a substrate and below an organic ARC layer, which is below an immersion lithography photoresist mask is provided. The substrate with the etch layer, organic ARC layer, and immersion lithography photoresist mask is placed into a processing chamber. The organic ARC layer is opened. The organic ARC layer opening comprises flowing an organic ARC open gas mixture into the processing chamber, wherein the organic ARC open gas mixture comprises an etchant gas and a polymerization gas comprising CO, forming an organic ARC open plasma from the organic ARC open gas mixture, etching the organic ARC layer with the organic ARC open plasma until the organic ARC layer is opened, and stopping the flow of organic ARC open gas mixture into the processing chamber before the etch layer is completely etched.
摘要翻译：提供了一种用于在衬底上方的蚀刻层中形成蚀刻特征的方法，并且在浸没式光刻光刻胶掩模下面的有机ARC层下面形成蚀刻特征。将具有蚀刻层，有机ARC层和浸没光刻光刻胶掩模的基板放置在处理室中。有机ARC层打开。有机ARC层开口包括将有机ARC开放气体混合物流入处理室，其中有机ARC开放气体混合物包含蚀刻剂气体和包含CO的聚合气体，从有机ARC开放气体混合物形成有机ARC开放等离子体，用有机ARC打开的等离子体蚀刻有机ARC层直到有机ARC层被打开，并且在刻蚀层被完全蚀刻之前停止有机ARC开放气体混合物流入处理室。

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