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1. 发明申请

WO2009085564A3 ETCH WITH HIGH ETCH RATE RESIST MASK 审中-公开
标题翻译：用高蚀刻速率抗蚀剂掩模蚀刻
公开(公告)号：WO2009085564A3
公开(公告)日：2009-10-01
申请号：PCT/US2008085751
申请日：2008-12-05
申请人： LAM RES CORP , ROMANO ANDREW R , SADJADI REZA S M
发明人： ROMANO ANDREW R , SADJADI REZA S M
IPC分类号： H01L21/027 , H01L21/3065
CPC分类号： H01L21/31144 , G03F7/40 , H01L21/0337 , H01L21/0338 , H01L21/32139
摘要： A method for etching features into an etch layer is provided. A patterned mask is formed over the etch layer, wherein the patterned mask is of a high etch rate photoresist material, wherein the patterned mask has patterned mask features. A protective layer is deposited on the patterned mask of high etch rate photoresist material by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including sidewalls of the patterned mask of high etch rate photoresist material and a profile shaping phase for providing vertical sidewalls. Features are etched into the etch layer using the protective layer as a mask. The protective layer is removed.
摘要翻译：提供了将特征蚀刻到蚀刻层中的方法。在蚀刻层上形成图案化掩模，其中图案化掩模是高蚀刻速率光刻胶材料，其中图案化掩模具有图案化掩模特征。通过执行循环沉积，在高蚀刻速率光致抗蚀剂材料的图案化掩模上沉积保护层，其中每个循环包括用于在暴露表面（包括高蚀刻速率光致抗蚀剂图案化掩模的侧壁）上沉积沉积层的沉积阶段材料和用于提供垂直侧壁的轮廓成形阶段。使用保护层作为掩模将特征蚀刻到蚀刻层中。保护层被移除。

2. 发明申请

WO2004034445A3 A METHOD FOR PLASMA ETCHING PERFORMANCE ENHANCEMENT 审中-公开
公开(公告)号：WO2004034445A3
公开(公告)日：2004-04-22
申请号：PCT/US2003/031712
申请日：2003-10-06
申请人： LAM RESEARCH CORPORATION , LI, Lumin , SADJADI, Reza , HUANG, Zhisong
发明人： HUANG, Zhisong
IPC分类号： H01L21/311
摘要： A method for etching a feature in a layer through an etching mask is provided. A protective layer is formed on exposed surfaces of the etching mask and vertical sidewalls of the feature with a passivation gas mixture. The feature is etched through the etching mask with reactive etching mixtures containing at least one etching chemical and at least one passivation chemical.

3. 发明申请

WO2009085564A2 ETCH WITH HIGH ETCH RATE RESIST MASK 审中-公开
标题翻译：用高蚀刻速率抗蚀剂掩模蚀刻
公开(公告)号：WO2009085564A2
公开(公告)日：2009-07-09
申请号：PCT/US2008/085751
申请日：2008-12-05
申请人： LAM RESEARCH CORPORATION , ROMANO, Andrew, R. , SADJADI, Reza, S.M.
发明人： ROMANO, Andrew, R. , SADJADI, Reza, S.M.
IPC分类号： H01L21/027 , H01L21/30
CPC分类号： H01L21/31144 , G03F7/40 , H01L21/0337 , H01L21/0338 , H01L21/32139
摘要： A method for etching features into an etch layer is provided. A patterned mask is formed over the etch layer, wherein the patterned mask is of a high etch rate photoresist material, wherein the patterned mask has patterned mask features. A protective layer is deposited on the patterned mask of high etch rate photoresist material by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including sidewalls of the patterned mask of high etch rate photoresist material and a profile shaping phase for providing vertical sidewalls. Features are etched into the etch layer using the protective layer as a mask. The protective layer is removed.
摘要翻译：提供了用于将特征蚀刻到蚀刻层中的方法。在蚀刻层上形成图案化掩模，其中图案化掩模是高蚀刻速率光刻胶材料，其中图案化掩模具有图案化掩模特征。通过执行循环沉积，在高蚀刻速率光致抗蚀剂材料的图案化掩模上沉积保护层，其中每个循环包括用于在暴露表面（包括高蚀刻速率光致抗蚀剂图案化掩模的侧壁）上沉积沉积层的沉积阶段材料和用于提供垂直侧壁的轮廓成形阶段。使用保护层作为掩模将特征蚀刻到蚀刻层中。保护层被移除。

4. 发明申请

WO2005001877B1 MAGNETIC ENHANCEMENT FOR MECHANICAL CONFINEMENT OF PLASMA 审中-公开
标题翻译：机械等离子体磁化强化
公开(公告)号：WO2005001877B1
公开(公告)日：2008-05-02
申请号：PCT/US2004018557
申请日：2004-06-10
申请人： LAM RES CORP , KEIL DOUGLAS L , LI LUMIN , HUDSON ERIC A , SADJADI REZA , LENZ ERIC H , DHINDSA RAJINDER , KIM JI SOO
发明人： KEIL DOUGLAS L , LI LUMIN , HUDSON ERIC A , SADJADI REZA , LENZ ERIC H , DHINDSA RAJINDER , KIM JI SOO
IPC分类号： H01J37/32
CPC分类号： H01J37/3266 , H01J37/32431 , H01J37/32623
摘要： A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.
摘要翻译：提供了一种用于处理衬底的等离子体处理装置。提供了具有室壁的等离子体处理室。在室壁内提供衬底支撑件。提供至少一个限制环，其中限制环和衬底支撑件限定等离子体体积。提供了一种用于产生用于磁力增强由至少一个限制环提供的物理限制的磁场的磁源。

5. 发明申请

WO2008008259A2 APPARATUS AND METHOD FOR CONTROLLING PLASMA POTENTIAL 审中-公开
标题翻译：用于控制等离子体潜能的装置和方法
公开(公告)号：WO2008008259A2
公开(公告)日：2008-01-17
申请号：PCT/US2007015509
申请日：2007-07-06
申请人： LAM RES CORP , KEIL DOUGLAS , LI LUMIN , SADJADI REZA , HUDSON ERIC , LENZ ERIC , DHINDSA RAJINDER
发明人： KEIL DOUGLAS , LI LUMIN , SADJADI REZA , HUDSON ERIC , LENZ ERIC , DHINDSA RAJINDER
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.
摘要翻译：提供了一种用于半导体晶片等离子体处理的装置。该装置包括具有下电极和设置在其中的上电极的腔室。下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。上电极设置在下电极的上方，并与腔电隔离。电压源连接到上电极。电压源被定义为控制上电极相对于腔室的电位。由电压源控制的上电极的电位能够影响在下电极和上电极之间产生的等离子体的电位。

6. 发明申请

WO2006074050A3 ELECTRICALLY ENHANCING THE CONFINEMENT OF PLASMA 审中-公开
标题翻译：电动增强等离子体的浓度
公开(公告)号：WO2006074050A3
公开(公告)日：2007-04-19
申请号：PCT/US2005047385
申请日：2005-12-29
申请人： LAM REASEARCH CORP , KUTHI ANDRAS , KIM JISOO , LENZ ERIC , DHINDSA RAJINDAR , LI LUMIN , SADJADI REZA
发明人： KUTHI ANDRAS , KIM JISOO , LENZ ERIC , DHINDSA RAJINDAR , LI LUMIN , SADJADI REZA
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , Y10S156/915
摘要： A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.
摘要翻译：真空等离子体处理器包括具有接地壁和出口的室。等离子体在与壁和出口间隔开的室区域中以第一RF频率激发。结构将等离子体限制在该区域上，同时使气体能够从该区域流出到出口。连接到限制结构的第二频率的RF电力使得限制结构处于不同于地面的电位，以增加等离子体和限制结构之间的护套尺寸，并增加限制结构的有效性。该区域包括通过与第一频率串联谐振并包括护套的电容的电路连接到地的电极。

7. 发明申请

WO2005112093A3 GAS DISTRIBUTION SYSTEM HAVING FAST GAS SWITCHING CAPABILITIES 审中-公开
标题翻译：具有快速气体切换能力的气体分配系统
公开(公告)号：WO2005112093A3
公开(公告)日：2007-01-11
申请号：PCT/US2005013582
申请日：2005-04-22
申请人： LAM RES CORP , HUANG ZHISONG , SAM JOSE TONG , LENZ ERIC , DHINDSA RAJINDER , SADJADI REZA
发明人： HUANG ZHISONG , SAM JOSE TONG , LENZ ERIC , DHINDSA RAJINDER , SADJADI REZA
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： C23C16/45561 , C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.
摘要翻译：提供了一种用于向诸如等离子体处理装置的等离子体处理室之类的室提供不同气体组成的气体分配系统。气体分配系统可以包括气体供应部，流量控制部和切换部。气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。切换部分优选地包括可操作以快速打开和关闭的快速切换阀，以允许第一和第二气体的快速切换，优选地，在任一种气体的流动中不会出现不期望的压力波动或流动不稳定性。

8. 发明申请

WO2006074050A2 ELECTRICALLY ENHANCING THE CONFINEMENT OF PLASMA 审中-公开
标题翻译：电动增强等离子体制约
公开(公告)号：WO2006074050A2
公开(公告)日：2006-07-13
申请号：PCT/US2005/047385
申请日：2005-12-29
申请人： LAM REASEARCH CORPORATION , KUTHI, Andras , KIM, Jisoo , LENZ, Eric , DHINDSA, Rajindar , LI, Lumin , SADJADI, Reza
发明人： KUTHI, Andras , KIM, Jisoo , LENZ, Eric , DHINDSA, Rajindar , LI, Lumin , SADJADI, Reza
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , Y10S156/915
摘要： A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.
摘要翻译：真空等离子体处理器包括具有接地壁和出口的室。等离子体在与壁和出口间隔开的室区域中以第一RF频率激发。结构将等离子体限制在该区域上，同时使气体能够从该区域流出到出口。连接到限制结构的第二频率的RF电力导致约束结构处于不同于地面的电位，以增加等离子体和限制结构之间的护套尺寸，并增加限制结构的有效性。该区域包括通过串联谐振到第一频率的电路连接到地的电极，并且包括护套的电容。

9. 发明申请

WO2005001877A3 MAGNETIC ENHANCEMENT FOR MECHANICAL CONFINEMENT OF PLASMA 审中-公开
标题翻译：磁场强化对等离子体机械约束的影响
公开(公告)号：WO2005001877A3
公开(公告)日：2005-03-31
申请号：PCT/US2004018557
申请日：2004-06-10
申请人： LAM RES CORP , KEIL DOUGLAS L , LI LUMIN , HUDSON ERIC A , SADJADI REZA , LENZ ERIC H , DHINDSA RAJINDER , KIM JI SOO
发明人： KEIL DOUGLAS L , LI LUMIN , HUDSON ERIC A , SADJADI REZA , LENZ ERIC H , DHINDSA RAJINDER , KIM JI SOO
IPC分类号： H01J37/32
CPC分类号： H01J37/3266 , H01J37/32431 , H01J37/32623
摘要： A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.
摘要翻译：提供了一种用于处理基板的等离子体处理装置。提供具有室壁的等离子体处理室。衬底支架设置在室壁内。提供至少一个约束环，其中约束环和衬底支撑件限定等离子体体积。提供了用于产生用于磁性增强由至少一个约束环提供的物理限制的磁场的磁源。

10. 发明申请

WO2005001877A2 MAGNETIC ENHANCEMENT FOR MECHANICAL CONFINEMENT OF PLASMA 审中-公开
标题翻译：机械等离子体磁化强化
公开(公告)号：WO2005001877A2
公开(公告)日：2005-01-06
申请号：PCT/US2004/018557
申请日：2004-06-10
申请人： LAM RESEARCH CORPORATION , KEIL, Douglas, L. , LI, Lumin , HUDSON, Eric, A. , SADJADI, Reza , LENZ, Eric, H. , DHINDSA, Rajinder , KIM, Ji, Soo
发明人： KEIL, Douglas, L. , LI, Lumin , HUDSON, Eric, A. , SADJADI, Reza , LENZ, Eric, H. , DHINDSA, Rajinder , KIM, Ji, Soo
IPC分类号： H01J37/32
CPC分类号： H01J37/3266 , H01J37/32431 , H01J37/32623
摘要： A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.
摘要翻译：提供了一种用于处理衬底的等离子体处理装置。提供具有室壁的等离子体处理室。在室壁内提供衬底支撑件。提供至少一个限制环，其中限制环和衬底支撑件限定等离子体体积。提供了一种用于产生用于磁力增强由至少一个限制环提供的物理限制的磁场的磁源。

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