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    • 1. 发明申请
    • ETCH WITH HIGH ETCH RATE RESIST MASK
    • 用高蚀刻速率抗蚀剂掩模蚀刻
    • WO2009085564A3
    • 2009-10-01
    • PCT/US2008085751
    • 2008-12-05
    • LAM RES CORPROMANO ANDREW RSADJADI REZA S M
    • ROMANO ANDREW RSADJADI REZA S M
    • H01L21/027H01L21/3065
    • H01L21/31144G03F7/40H01L21/0337H01L21/0338H01L21/32139
    • A method for etching features into an etch layer is provided. A patterned mask is formed over the etch layer, wherein the patterned mask is of a high etch rate photoresist material, wherein the patterned mask has patterned mask features. A protective layer is deposited on the patterned mask of high etch rate photoresist material by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including sidewalls of the patterned mask of high etch rate photoresist material and a profile shaping phase for providing vertical sidewalls. Features are etched into the etch layer using the protective layer as a mask. The protective layer is removed.
    • 提供了将特征蚀刻到蚀刻层中的方法。 在蚀刻层上形成图案化掩模,其中图案化掩模是高蚀刻速率光刻胶材料,其中图案化掩模具有图案化掩模特征。 通过执行循环沉积,在高蚀刻速率光致抗蚀剂材料的图案化掩模上沉积保护层,其中每个循环包括用于在暴露表面(包括高蚀刻速率光致抗蚀剂图案化掩模的侧壁)上沉积沉积层的沉积阶段 材料和用于提供垂直侧壁的轮廓成形阶段。 使用保护层作为掩模将特征蚀刻到蚀刻层中。 保护层被移除。
    • 7. 发明申请
    • GAS DISTRIBUTION SYSTEM HAVING FAST GAS SWITCHING CAPABILITIES
    • 具有快速气体切换能力的气体分配系统
    • WO2005112093A3
    • 2007-01-11
    • PCT/US2005013582
    • 2005-04-22
    • LAM RES CORPHUANG ZHISONGSAM JOSE TONGLENZ ERICDHINDSA RAJINDERSADJADI REZA
    • HUANG ZHISONGSAM JOSE TONGLENZ ERICDHINDSA RAJINDERSADJADI REZA
    • C23F1/00H01L21/306
    • C23C16/45561C23C16/45565H01J37/3244H01J37/32449
    • A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.
    • 提供了一种用于向诸如等离子体处理装置的等离子体处理室之类的室提供不同气体组成的气体分配系统。 气体分配系统可以包括气体供应部,流量控制部和切换部。 气体供应部分将第一和第二气体(通常为气体混合物)提供给流量控制部分,该控制部分控制第一和第二气体流到室的流动。 腔室可以包括多个区域,并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。 气体分配系统可以将第一和第二气体连续地供应到切换部分,并且切换部分可操作地切换第一和第二气体的流动,使得第一和第二处理气体中的一个被供应到腔室,而 第一和第二气体中的另一个被供应到旁路管线,然后切换气体流。 切换部分优选地包括可操作以快速打开和关闭的快速切换阀,以允许第一和第二气体的快速切换,优选地,在任一种气体的流动中不会出现不期望的压力波动或流动不稳定性。