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1. 发明申请

WO2005012273A3 PROCESS FOR THE PREPARATION OF SUBSTITUTED THIAZOLES 审中-公开
标题翻译：制备替代THIAZOLES的方法
公开(公告)号：WO2005012273A3
公开(公告)日：2005-05-12
申请号：PCT/US2004024758
申请日：2004-07-30
申请人： ABBOTT LAB , ROBBINS TIMOTHY A , ZHU HELEN , SHAO JUN
发明人： ROBBINS TIMOTHY A , ZHU HELEN , SHAO JUN
IPC分类号： C07D277/56
CPC分类号： C07D277/56
摘要： This invention is directed to processes for making substituted thiazoles. The substituted thiazole, ethyl 2-(4-hydroxyphenyl)-4-methyl-1,3-thiazole-5-carboxylate, also known as TEI-6720, is useful for treatment of gout and hyperuricemia. This compound belongs to a class of substituted thiazoles that inhibit xanthine oxidase and thus block uric acid production.
摘要翻译：本发明涉及制备取代噻唑的方法。取代的噻唑，2-（4-羟基苯基）-4-甲基-1,3-噻唑-5-羧酸乙酯，也称为TEI-6720，可用于治疗痛风和高尿酸血症。该化合物属于一类可抑制黄嘌呤氧化酶并因此阻断尿酸生产的取代噻唑类。

2. 发明申请

WO2010033434A2 SIDEWALL FORMING PROCESSES 审中-公开
标题翻译：侧壁成形工艺
公开(公告)号：WO2010033434A2
公开(公告)日：2010-03-25
申请号：PCT/US2009/056716
申请日：2009-09-11
申请人： LAM RESEARCH CORPORATION , CIRIGLIANO, Peter , ZHU, Helen , KIM, Ji Soo , SADJADI, S.M. Reza
发明人： CIRIGLIANO, Peter , ZHU, Helen , KIM, Ji Soo , SADJADI, S.M. Reza
IPC分类号： H01L21/3065
CPC分类号： H01L21/0337 , H01L21/31144 , H01L21/312
摘要： An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.
摘要翻译：提供在图案化的光刻胶掩模下面的蚀刻层。执行多个侧壁形成过程。每个侧壁形成过程包括通过执行多次循环沉积而在图案化的光刻胶掩模上沉积保护层。每个循环沉积至少包括用于在图案化的光刻胶掩模的表面上沉积沉积层的沉积阶段和用于在沉积层中成形垂直表面的轮廓成形阶段。每个侧壁形成工艺还包括用于选择性地蚀刻保护层相对于保护层的垂直表面的水平表面的突破蚀刻。之后，蚀刻蚀刻层以形成具有小于图案化光刻胶掩模中的特征的临界尺寸的临界尺寸的特征。

3. 发明申请

WO2005050700A3 LINE EDGE ROUGHNESS REDUCTION FOR TRENCH ETCH 审中-公开
标题翻译：线边缘粗糙度减少
公开(公告)号：WO2005050700A3
公开(公告)日：2005-12-01
申请号：PCT/US2004036746
申请日：2004-11-03
申请人： LAM RES CORP , WAGGANER ERIC , ZHU HELEN H , LE DANIEL , LOEWENHARDT PETER
发明人： WAGGANER ERIC , ZHU HELEN H , LE DANIEL , LOEWENHARDT PETER
IPC分类号： H01L20060101 , H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method for etching a trench (314, Fig. 3B) to a trench depth (318, Fig. 3B) in a dielectric layer (308, Fig. 3B) over a substrate (304, Fig. 3B) is provided. An ARC (310, Fig. 3B) is applied over the dielectric layer (308, Fig. 3B). A photoresist mask (312, Fig. 3B) is formed on the ARC (310, Fig. 3B), where the photoresist mask has a thickness. The ARC is etched through. A trench (314, Fig. 3B) is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.
摘要翻译：提供了一种用于在衬底（304，图3B）上的介电层（图3B中的308）蚀刻沟槽（314，图3B）到沟槽深度（318，图3B）的方法。将ARC（图3B）310施加在电介质层（图3B的308）上。在ARC（310，图3B））上形成光致抗蚀剂掩模（312，图3B），其中光致抗蚀剂掩模具有厚度。 ARC蚀刻通过。在介质层中蚀刻具有介于1：1和2：1之间的光致抗蚀剂蚀刻选择性的沟槽（314，图3B）。

4. 发明申请

WO2005088693A1 LINE EDGE ROUGHNESS CONTROL 审中-公开
标题翻译：线边缘粗糙度控制
公开(公告)号：WO2005088693A1
公开(公告)日：2005-09-22
申请号：PCT/US2005/007386
申请日：2005-03-02
申请人： LAM RESEARCH CORPORATION , CHOI, Youngjin , ZHU, Helen, H. , LEE, Sangheon , KANG, Sean, S.
发明人： CHOI, Youngjin , ZHU, Helen, H. , LEE, Sangheon , KANG, Sean, S.
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/0276 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32139
摘要： A method for etching a layer through a photoresist mask with an ARC layer between the layer to be etched and the photoresist mask over a substrate is provided. The substrate is placed into a processing chamber. An ARC open gas mixture is provided into the processing chamber. The ARC open gas mixture comprises an etchant gas and a polymerization gas comprising CO and CH3F. An ARC open plasma is formed from the ARC open gas mixture. The ARC layer is etched with the ARC open plasma until the ARC layer is opened. The ARC open gas mixture stopped before the layer to be etched is completely etched.
摘要翻译：提供了一种通过具有ARC层之间的光致抗蚀剂掩模蚀刻层的方法，该蚀刻掩模在被蚀刻层与衬底上的光致抗蚀剂掩模之间。将基板放置在处理室中。将ARC开放气体混合物提供到处理室中。 ARC敞开气体混合物包括蚀刻剂气体和包含CO和CH 3 F的聚合气体。 ARC开放式气体混合物形成ARC开放式等离子体。用ARC打开的等离子体蚀刻ARC层，直到ARC层打开。 ARC打开的气体混合物在被蚀刻层被完全蚀刻之前停止。

5. 发明申请

WO2005038906A1 AN ETCH BACK PROCESS USING NITROUS OXIDE 审中-公开
标题翻译：使用硝酸氧化物的回流工艺
公开(公告)号：WO2005038906A1
公开(公告)日：2005-04-28
申请号：PCT/US2004/032790
申请日：2004-10-05
申请人： LAM RESEARCH CORPORATION , ANNAPRAGADA, Rao , ZHU, Helen
发明人： ANNAPRAGADA, Rao , ZHU, Helen
IPC分类号： H01L21/8238
CPC分类号： H01L21/76808 , H01L21/0276 , H01L21/31138 , H01L21/31144
摘要： A method for generating an organic plug within a via is described. The via resides in an integrated circuit (IC) structure having a silicon containing dielectric material. The method for generating the organic plug includes applying an organic compound such as a bottom antireflective coating. The organic compound occupies the via. The method then proceeds to feed a nitrous oxide (N 2 0) gas into a reactor and generates a plasma in the reactor. A significant portion of the organic compound is removed leaving behind an organic plug to occupy the via. The organic plug is typically generated during dual damascene processing.
摘要翻译：描述了用于在通孔内产生有机插塞的方法。通孔位于具有含硅介电材料的集成电路（IC）结构中。用于产生有机插塞的方法包括施加有机化合物，例如底部抗反射涂层。有机化合物占据通孔。然后，该方法进行将一氧化二氮（N 2 O）气体进料到反应器中并在反应器中产生等离子体。去除有机化合物的重要部分，留下有机塞以占据通孔。有机插塞通常在双镶嵌处理期间产生。

6. 发明申请

WO2004102277B1 METHOD PROVIDING AN IMPROVED BI-LAYER PHOTORESIST PATTERN 审中-公开
标题翻译：提供改进的双层光电子图案的方法
公开(公告)号：WO2004102277B1
公开(公告)日：2005-03-03
申请号：PCT/US2004013818
申请日：2004-04-29
申请人： LAM RES CORP , XIAO HANZHONG , ZHU HELEN H , TANG KUO-LUNG , SADJADI S M REZA
发明人： XIAO HANZHONG , ZHU HELEN H , TANG KUO-LUNG , SADJADI S M REZA
IPC分类号： G03F7/09 , G03F7/36 , H01L21/027 , H01L21/033 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/0332 , H01L21/31144
摘要： A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.
摘要翻译：提供了蚀刻层中的特征的方法。在该层上形成聚合物材料的底层。在底层上形成顶部图像层。顶部图像层暴露于图案化辐射。在顶层图像层中开发出图案。该图案通过减少的干蚀刻从顶部图像层转移到底层。该层被蚀刻通过底层，其中顶部图像层被完全去除，并且在蚀刻层期间将底层用作图案掩模，以将图案从底层转移到层。

7. 发明申请

WO2005012273A2 SUBSTITUTED THIAZOLES 审中-公开
标题翻译：替代THIAZOLES
公开(公告)号：WO2005012273A2
公开(公告)日：2005-02-10
申请号：PCT/US2004/024758
申请日：2004-07-30
申请人： ABBOTT LABORATORIES , ROBBINS, Timothy, A. , ZHU, Helen , SHAO, Jun
发明人： ROBBINS, Timothy, A. , ZHU, Helen , SHAO, Jun
IPC分类号： C07D277/56
CPC分类号： C07D277/56
摘要： This invention is directed to processes for making substituted thiazoles. The substituted thiazole, ethyl 2-(4-hydroxyphenyl)-4-methyl-1,3-thiazole-5-carboxylate, also known as TEI-6720, is useful for treatment of gout and hyperuricemia. This compound belongs to a class of substituted thiazoles that inhibit xanthine oxidase and thus block uric acid production.
摘要翻译：本发明涉及制备取代噻唑的方法。取代的噻唑，2-（4-羟基苯基）-4-甲基-1,3-噻唑-5-羧酸乙酯，也称为TEI-6720，可用于治疗痛风和高尿酸血症。该化合物属于一类抑制黄嘌呤氧化酶并因此阻断尿酸生产的取代噻唑类。

8. 发明申请

WO2004102277A2 METHOD PROVIDING AN IMPROVED BI-LAYER PHOTORESIST PATTERN 审中-公开
标题翻译：提供改进的双层光电子图案的方法
公开(公告)号：WO2004102277A2
公开(公告)日：2004-11-25
申请号：PCT/US2004013818
申请日：2004-04-29
申请人： LAM RES CORP , XIAO HANZHONG , ZHU HELEN H , TANG KUO-LUNG , SADJADI S M REZA
发明人： XIAO HANZHONG , ZHU HELEN H , TANG KUO-LUNG , SADJADI S M REZA
IPC分类号： G03F7/09 , G03F7/36 , H01L21/027 , H01L21/033 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/0332 , H01L21/31144
摘要： A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.
摘要翻译：提供了蚀刻层中的特征的方法。在该层上形成聚合物材料的底层。在底层上形成顶层图像层。顶部图像层暴露于图案化辐射。在顶部图像层中开发出图案。图案通过减少的干蚀刻从顶部图像层转移到底层。该层被蚀刻通过底层，其中顶部图像层被完全去除，并且在蚀刻该层期间将底层用作图案掩模以将图案从底层转移到该层。

9. 发明申请

WO2002080230A3 METHOD OF PLASMA ETCHING LOW-K ORGANOSILICATE MATERIALS 审中-公开
公开(公告)号：WO2002080230A3
公开(公告)日：2002-10-10
申请号：PCT/US2002/006648
申请日：2002-03-21
申请人： LAM RESEARCH CORPORATION , LI, Si, Yi , ZHU, Helen, H. , SADJADI, S., M., Reza , TIETZ, James, V. , HELMER, Bryan, A.
发明人： LI, Si, Yi , ZHU, Helen, H. , SADJADI, S., M., Reza , TIETZ, James, V. , HELMER, Bryan, A.
IPC分类号： H01L21/311
摘要： A semiconductor manufacturing process wherein organosilicate glass is plasma etched with selectivity to an overlying and/or underlying dielectric layer. The oxygen-free etchant gas includes a fluorocarbon reactant, a nitrogen reactant and an optional carrier gas, the fluorocarbon reactant and nitrogen reactant being supplied to the chamber at flow rates such that the fluorocarbon reactant flow rate is less than the nitrogen reactant flow rate. The etch rate of the organosilicate glass can be at least 5 times higher than that of the dielectric layer. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.

10. 发明申请

WO2010033434A3 SIDEWALL FORMING PROCESSES 审中-公开
标题翻译：边框成型工艺
公开(公告)号：WO2010033434A3
公开(公告)日：2010-06-10
申请号：PCT/US2009056716
申请日：2009-09-11
申请人： LAM RES CORP , CIRIGLIANO PETER , ZHU HELEN , KIM JI SOO , SADJADI S M REZA
发明人： CIRIGLIANO PETER , ZHU HELEN , KIM JI SOO , SADJADI S M REZA
IPC分类号： H01L21/3065
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/312
摘要： An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.
摘要翻译：提供了图案化光刻胶掩模下面的蚀刻层。执行多个侧壁形成工序。每个侧壁形成工艺包括通过执行多个循环沉积在图案化的光致抗蚀剂掩模上沉积保护层。每个循环沉积涉及至少沉积阶段，用于在图案化的光致抗蚀剂掩模的表面上沉积沉积层，以及用于在沉积层中形成垂直表面的轮廓成形阶段。每个侧壁形成工艺还包括用于相对于保护层的垂直表面选择性地蚀刻保护层的水平表面的穿透蚀刻。之后，刻蚀蚀刻层以形成临界尺寸小于图案化光致抗蚀剂掩模中特征的临界尺寸的特征。

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