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1. 发明申请

WO2005091974A3 METHODS FOR THE OPTIMIZATION OF SUBSTRATE ETCHING IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：在等离子体处理系统中优化基板蚀刻的方法
公开(公告)号：WO2005091974A3
公开(公告)日：2006-09-21
申请号：PCT/US2005007886
申请日：2005-03-09
申请人： LAM RES CORP , KIM JISOO , WORSHAM BINET , YEN BI-MING , LOEWENHARDT PETER K
发明人： KIM JISOO , WORSHAM BINET , YEN BI-MING , LOEWENHARDT PETER K
IPC分类号： C23F1/00 , B44C1/22 , C03C15/00 , H01L21/302 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/76811 , H01L21/76813
摘要： A method of etching a substrate in a plasma processing system is disclosed. The substrate has a semi-conductor layer, a first barrier layer disposed above the semi-conductor layer, a low-k layer disposed above the first barrier layer, a third hard mask layer disposed above the low-k layer; a second hard mask layer disposed above the third hard mask layer, and a first hard mask layer disposed above the second hard mask layer. The method includes alternatively etching the substrate with a first etchant and a second etchant, wherein the first etchant has a low selectivity to a first hard mask material of the first hard mask layer, a third hard mask material of the a third hard mask layer, and a first barrier layer material of the first barrier layer, but a high selectivity to a second hard mask material of the second hard mask layer; and wherein the second etchant has a high selectivity to the first hard mask material of the first hard mask layer, the third hard mask material of the third hard mask layer, and the first barrier layer material of the first barrier layer, and the first etchant has a low selectivity to the second hard mask material of the second hard mask layer.
摘要翻译：公开了一种在等离子体处理系统中蚀刻衬底的方法。衬底具有半导体层，设置在半导体层上方的第一势垒层，设置在第一阻挡层上方的低k层，设置在低k层上方的第三硬掩模层; 设置在第三硬掩模层之上的第二硬掩模层，以及设置在第二硬掩模层上方的第一硬掩模层。所述方法包括用第一蚀刻剂和第二蚀刻剂替代地蚀刻所述衬底，其中所述第一蚀刻剂对所述第一硬掩模层的第一硬掩模材料具有低选择性，所述第三硬掩模层的第三硬掩模材料，和第一阻挡层的第一阻挡层材料，但对第二硬掩模层的第二硬掩模材料具有高选择性; 并且其中第二蚀刻剂对第一硬掩模层的第一硬掩模材料，第三硬掩模层的第三硬掩模材料和第一阻挡层的第一阻挡层材料和第一蚀刻剂具有高选择性对第二硬掩模层的第二硬掩模材料具有低选择性。

2. 发明申请

WO2005059962A3 TEMPERATURE CONTROLLED HOT EDGE RING ASSEMBLY FOR REDUCING PLASMA REACTOR ETCH RATE DRIFT 审中-公开
标题翻译：温度控制热边缘组件，用于降低等离子体反应器蚀刻速率
公开(公告)号：WO2005059962A3
公开(公告)日：2006-02-23
申请号：PCT/US2004041768
申请日：2004-12-10
申请人： LAM RES CORP , FISCHER ANDREAS , LOEWENHARDT PETER
发明人： FISCHER ANDREAS , LOEWENHARDT PETER
IPC分类号： H01J37/32 , H01L21/00 , H01L21/687 , H01L21/306 , B24B5/00 , B24B7/22 , B24B29/00 , B24B37/04 , B24B41/06 , C23F1/02
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/67069
摘要： A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.
摘要翻译：适于围绕等离子体反应室中的衬底支撑件的温度控制的热边缘环组件。组件包括导电下环，陶瓷中间环和上环。中间环覆盖在下环上并且适于经由下环连接到RF电极。上环覆盖中间环，并且具有暴露于等离子体反应室内部的上表面。

3. 发明申请

WO2005091974A2 METHODS FOR THE OPTIMIZATION OF SUBSTRATE ETCHING IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：一种等离子体处理系统中基片蚀刻的优化方法
公开(公告)号：WO2005091974A2
公开(公告)日：2005-10-06
申请号：PCT/US2005/007886
申请日：2005-03-09
申请人： LAM RESEARCH CORPORATION , KIM, Jisoo , WORSHAM, Binet , YEN, Bi-Ming , LOEWENHARDT, Peter K.
发明人： KIM, Jisoo , WORSHAM, Binet , YEN, Bi-Ming , LOEWENHARDT, Peter K.
IPC分类号： B44C1/22 , C03C15/00 , C23F1/00 , H01L21/302 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/76811 , H01L21/76813
摘要： A method of etching a substrate in a plasma processing system is disclosed. The substrate has a semi-conductor layer, a first barrier layer disposed above the semi-conductor layer, a low-k layer disposed above the first barrier layer, a third hard mask layer disposed above the low-k layer; a second hard mask layer disposed above the third hard mask layer, and a first hard mask layer disposed above the second hard mask layer. The method includes alternatively etching the substrate with a first etchant and a second etchant, wherein the first etchant has a low selectivity to a first hard mask material of the first hard mask layer, a third hard mask material of the a third hard mask layer, and a first barrier layer material of the first barrier layer, but a high selectivity to a second hard mask material of the second hard mask layer; and wherein the second etchant has a high selectivity to the first hard mask material of the first hard mask layer, the third hard mask material of the third hard mask layer, and the first barrier layer material of the first barrier layer, and the first etchant has a low selectivity to the second hard mask material of the second hard mask layer.
摘要翻译：公开了一种在等离子体处理系统中蚀刻衬底的方法。衬底具有半导体层，设置在半导体层上方的第一阻挡层，设置在第一阻挡层上方的低k层，设置在低k层上方的第三硬掩模层，设置在第三硬掩模层上方的第二硬掩模层以及设置在第二硬掩模层上方的第一硬掩模层。该方法包括用第一蚀刻剂和第二蚀刻剂交替地蚀刻衬底，其中第一蚀刻剂对第一硬掩模层的第一硬掩模材料，第三硬掩模层的第三硬掩模材料，以及第一阻挡层的第一阻挡层材料，但对第二硬掩模层的第二硬掩模材料具有高选择性; 且其中所述第二蚀刻剂对所述第一硬掩模层的所述第一硬掩模材料，所述第三硬掩模层的所述第三硬掩模材料以及所述第一势垒层的所述第一势垒层材料具有高选择性，并且所述第一蚀刻剂对第二硬掩模层的第二硬掩模材料具有低选择性。

4. 发明申请

WO2004102638A3 RF PULSING OF A NARROW GAP CAPACITIVELY COUPLED REACTOR 审中-公开
标题翻译：窄带隙电容耦合反应器的射频脉冲
公开(公告)号：WO2004102638A3
公开(公告)日：2005-07-28
申请号：PCT/US2004013707
申请日：2004-04-29
申请人： LAM RES CORP , LOEWENHARDT PETER , SRINIVASAN MUKUND , FISCHER ANDREAS
发明人： LOEWENHARDT PETER , SRINIVASAN MUKUND , FISCHER ANDREAS
IPC分类号： H01J37/32
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32165
摘要： An apparatus for providing a plasma etch of a layer over a wafer is provided, comprising a capacitively coupled process chamber (100), a gas source (110), a first (104) and a second electrode (108) within the process chamber. A first radio frequency power source (144) is electrically connected to at least one of the first and second electrodes, where the first radio frequency power source provides radio frequency power. A second radio frequency power source (148) is electrically connected to at least one of the first and second electrodes. A first modulation control (133) is connected to the first radio frequency power source, to provide a controlled modulation of the first radio frequency power source.
摘要翻译：提供了一种用于在晶片上提供层的等离子体蚀刻的装置，其包括处理室内的电容耦合处理室（100），气体源（110），第一（104）和第二电极（108）。第一射频电源（144）电连接到第一和第二电极中的至少一个，其中第一射频电源提供射频功率。第二射频电源（148）电连接到第一和第二电极中的至少一个。第一调制控制（133）连接到第一射频电源，以提供对第一射频电源的受控调制。

5. 发明申请

WO2012020355A3 METHODS FOR PREVENTING CORROSION OF PLASMA-EXPOSED YTTRIA COATED CONSTITUENTS 审中-公开
标题翻译：防止等离子暴露的YTTRIA涂层成分腐蚀的方法
公开(公告)号：WO2012020355A3
公开(公告)日：2012-06-07
申请号：PCT/IB2011053459
申请日：2011-08-03
申请人： LAM RES CORP , LAM RES AG , SWAMI GANAPATHY , LOEWENHARDT PETER , YUNSANG KIM
发明人： SWAMI GANAPATHY , LOEWENHARDT PETER , YUNSANG KIM
IPC分类号： H01L21/205
CPC分类号： C23C16/4404
摘要： In accordance with one embodiment of the present disclosure, a method for preventing corrosion of a plasma-exposed yttria-coated constituent from ambient acidic hydrolysis wherein the plasma-exposed yttria-coated constituent includes a hydrolysable acid precursor is disclosed. The method may include: removing the plasma-exposed yttria-coated constituent from a semiconductor processing assembly; binding the plasma-exposed yttria-coated constituent with flexible moisture wicking material; hydrolyzing the hydrolysable acid precursor with an overwhelming aqueous admixture to form a vitiated acidic compound, wherein the flexible moisture wicking material pulls the vitiated acidic compound away from the plasma-exposed yttria-coated constituent with capillary action; dehydrating the plasma-exposed yttria-coated constituent with additional flexible moisture wicking material to pull a latent amount of the vitiated acidic compound away from the plasma-exposed yttria-coated constituent; and isolating the plasma-exposed yttria-coated constituent from ambient moisture in a moisture obstructing enclosure.
摘要翻译：根据本公开的一个实施方式，公开了防止暴露于等离子体的氧化钇涂覆的组分从环境酸性水解腐蚀的方法，其中等离子体暴露的氧化钇涂覆的组分包含可水解的酸前体。该方法可以包括：从半导体加工组件移除暴露于等离子体的氧化钇涂覆的成分; 将暴露于等离子体的氧化钇涂覆的成分与挠性吸湿材料结合; 用压倒性含水混合物水解可水解酸前体以形成沾污的酸性化合物，其中柔性吸湿材料利用毛细管作用将沾污的酸性化合物从暴露于等离子体的氧化钇涂覆的成分拉开; 用额外的挠性吸湿材料使暴露于等离子体的氧化钇涂覆的组分脱水以将潜在量的腐蚀的酸性化合物从暴露于氧化钇的等离子体涂覆的组分上移开; 以及在潮湿阻挡外壳中将暴露于等离子体的氧化钇涂覆的成分与环境湿气分离。

6. 发明申请

WO2005091974A9 METHODS FOR THE OPTIMIZATION OF SUBSTRATE ETCHING IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：在等离子体处理系统中优化基板蚀刻的方法
公开(公告)号：WO2005091974A9
公开(公告)日：2005-11-24
申请号：PCT/US2005007886
申请日：2005-03-09
申请人： LAM RES CORP , KIM JISOO , WORSHAM BINET , YEN BI-MING , LOEWENHARDT PETER K
发明人： KIM JISOO , WORSHAM BINET , YEN BI-MING , LOEWENHARDT PETER K
IPC分类号： B44C1/22 , C03C15/00 , C23F1/00 , H01L21/302 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/76811 , H01L21/76813
摘要： A method of etching a substrate in a plasma processing system is disclosed. The substrate has a semi-conductor layer, a first barrier layer disposed above the semi-conductor layer, a low-k layer disposed above the first barrier layer, a third hard mask layer disposed above the low-k layer; a second hard mask layer disposed above the third hard mask layer, and a first hard mask layer disposed above the second hard mask layer. The method includes alternatively etching the substrate with a first etchant and a second etchant, wherein the first etchant has a low selectivity to a first hard mask material of the first hard mask layer, a third hard mask material of the a third hard mask layer, and a first barrier layer material of the first barrier layer, but a high selectivity to a second hard mask material of the second hard mask layer; and wherein the second etchant has a high selectivity to the first hard mask material of the first hard mask layer, the third hard mask material of the third hard mask layer, and the first barrier layer material of the first barrier layer, and the first etchant has a low selectivity to the second hard mask material of the second hard mask layer.
摘要翻译：公开了一种在等离子体处理系统中蚀刻衬底的方法。衬底具有半导体层，设置在半导体层上方的第一势垒层，设置在第一阻挡层上方的低k层，设置在低k层上方的第三硬掩模层; 设置在第三硬掩模层之上的第二硬掩模层，以及设置在第二硬掩模层上方的第一硬掩模层。所述方法包括用第一蚀刻剂和第二蚀刻剂替代地蚀刻所述衬底，其中所述第一蚀刻剂对所述第一硬掩模层的第一硬掩模材料具有低选择性，所述第三硬掩模层的第三硬掩模材料，和第一阻挡层的第一阻挡层材料，但对第二硬掩模层的第二硬掩模材料具有高选择性; 并且其中第二蚀刻剂对第一硬掩模层的第一硬掩模材料，第三硬掩模层的第三硬掩模材料和第一阻挡层的第一阻挡层材料和第一蚀刻剂具有高选择性对第二硬掩模层的第二硬掩模材料具有低选择性。

7. 发明申请

WO2005050700A2 LINE EDGE ROUGHNESS REDUCTION FOR TRENCH ETCH 审中-公开
标题翻译：线边缘粗糙度减少
公开(公告)号：WO2005050700A2
公开(公告)日：2005-06-02
申请号：PCT/US2004/036746
申请日：2004-11-03
申请人： LAM RESEARCH CORPORATION , WAGGANER, Eric , ZHU, Helen, H. , LE, Daniel , LOEWENHARDT, Peter
发明人： WAGGANER, Eric , ZHU, Helen, H. , LE, Daniel , LOEWENHARDT, Peter
IPC分类号： H01L
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method for etching a trench to a trench depth in a dielectric layer over a substrate is provided. An ARC is applied over the dielectric layer. A photoresist mask is formed on the ARC, where the photoresist mask has a thickness. The ARC is etched through. A trench is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.
摘要翻译：提供了一种用于在衬底上的介电层中蚀刻沟槽到沟槽深度的方法。将ARC施加在电介质层上。在ARC上形成光致抗蚀剂掩模，其中光致抗蚀剂掩模具有厚度。 ARC蚀刻通过。在介质层中蚀刻沟槽，其电介质至光致抗蚀剂蚀刻选择性为1：1至2：1。

8. 发明申请

WO2004055855B1 GAS DISTRIBUTION APPARATUS AND METHOD FOR UNIFORM ETCHING 审中-公开
标题翻译：气体分配装置和均匀蚀刻方法
公开(公告)号：WO2004055855B1
公开(公告)日：2005-03-17
申请号：PCT/US0338617
申请日：2003-12-04
申请人： LAM RES CORP , LARSON DEAN J , KADKHODAYAN BABAK , WU DI , TAKESHITA KENJI , YEN BI-MING , SU XINGCAI , DENTY WILLIAM M JR , LOEWENHARDT PETER
发明人： LARSON DEAN J , KADKHODAYAN BABAK , WU DI , TAKESHITA KENJI , YEN BI-MING , SU XINGCAI , DENTY WILLIAM M JR , LOEWENHARDT PETER
IPC分类号： C23F1/00 , G05D7/06 , H01J37/00 , H01J37/32 , H01L21/306 , H01L21/311
CPC分类号： G05D7/0664 , H01J37/3244 , H01L21/31116
摘要： An apparatus for providing different gases to different zones of a processing chamber comprises a gas supply (1880) for providing an etching gas flow; a flow splitter (1831, 1836 - 1840) in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs (1812, 1814, 1833, 1834) and a tuning gas system (1860- 1862, 1865 - 1868) in fluid connection to at least one of the legs of the plurality of legs (1812, 1814).
摘要翻译：用于向处理室的不同区域提供不同气体的装置包括用于提供蚀刻气体流的气体供应装置（1880）与气体供应流体连接的分流器（1831,1836-1840），用于将来自气体供应源的蚀刻气流分成多个支路（1812,1814,1833,1834）和调谐气体系统（1860-1862），1865至1868）流体连接至所述多个腿（1812,1814）中的至少一个腿。

9. 发明申请

WO2004055855A3 GAS DISTRIBUTION APPARATUS AND METHOD FOR UNIFORM ETCHING 审中-公开
标题翻译：气体分布装置和均匀蚀刻的方法
公开(公告)号：WO2004055855A3
公开(公告)日：2005-01-06
申请号：PCT/US0338617
申请日：2003-12-04
申请人： LAM RES CORP , LARSON DEAN J , KADKHODAYAN BABAK , WU DI , TAKESHITA KENJI , YEN BI-MING , SU XINGCAI , DENTY WILLIAM M JR , LOEWENHARDT PETER
发明人： LARSON DEAN J , KADKHODAYAN BABAK , WU DI , TAKESHITA KENJI , YEN BI-MING , SU XINGCAI , DENTY WILLIAM M JR , LOEWENHARDT PETER
IPC分类号： C23F1/00 , G05D7/06 , H01J37/00 , H01J37/32 , H01L21/306 , H01L21/311
CPC分类号： G05D7/0664 , H01J37/3244 , H01L21/31116
摘要： An apparatus for providing different gases to different zones of a processing chamber comprises a gas supply (1880) for providing an etching gas flow; a flow splitter (1831, 1836 - 1840) in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs (1812, 1814, 1833, 1834) and a tuning gas system (1860- 1862, 1865 - 1868) in fluid connection to at least one of the legs of the plurality of legs (1812, 1814).
摘要翻译：用于向处理室的不同区域提供不同气体的装置包括用于提供蚀刻气体流的气体供应源（1880）与气体供应流体连接的分流器（1831,1836-1840），用于将来自气体供应的蚀刻气体流分解成多个腿部（1812,1814,1833,1834）和调节气体系统（1860-1862），1865-1868）与所述多个腿部（1812,1814）中的至少一个腿流体连接。

10. 发明申请

WO2004102638A2 RF PULSING OF A NARROW GAP CAPACITIVELY COUPLED REACTOR 审中-公开
标题翻译：窄带隙电容耦合反应器的射频脉冲
公开(公告)号：WO2004102638A2
公开(公告)日：2004-11-25
申请号：PCT/US2004/013707
申请日：2004-04-29
申请人： LAM RESEARCH CORPORATION , LOEWENHARDT, Peter , SRINIVASAN, Mukund , FISCHER, Andreas
发明人： LOEWENHARDT, Peter , SRINIVASAN, Mukund , FISCHER, Andreas
IPC分类号： H01L21/00
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32165
摘要： An apparatus for providing a plasma etch of a layer over a wafer is provided. A capacitively coupled process chamber is provided. A gas source is provided. A first and a second electrode are provided within the process chamber. A first radio frequency power source is electrically connected to at least one of the first and second electrodes, where the first radio frequency power source provides radio frequency power. A second radio frequency power source is electrically connected to at least one of the first and second electrodes. A first modulation control is connected to the first radio frequency power source, to provide a controlled modulation of the first radio frequency power source.
摘要翻译：提供了一种用于在晶片上提供层的等离子体蚀刻的设备。提供了一种电容耦合处理室。提供气源。第一和第二电极设置在处理室内。第一射频电源电连接到第一和第二电极中的至少一个，其中第一射频电源提供射频功率。第二射频电源电连接到第一和第二电极中的至少一个。第一调制控制连接到第一射频电源，以提供对第一射频电源的受控调制。

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