专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2007001653A3 RETICLE ALIGNMENT TECHNIQUE 审中-公开
公开(公告)号：WO2007001653A3
公开(公告)日：2007-01-04
申请号：PCT/US2006/018380
申请日：2006-05-10
申请人： LAM RESEARCH CORPORATION , SADJADI, S.M., Reza
发明人： SADJADI, S.M., Reza
IPC分类号： H01L23/544 , H01L21/00 , G01B11/00
摘要： A method for aligning a reticle is provided (304, 324). A first patterned layer with a first alignment grid is formed (308). Sidewall layers are formed over the first patterned layer to perform a first shrink (312). The first alignment grid after shrink is etched into an etch layer to form an etched first alignment grid (316). The patterned layer is removed (320).

2. 发明申请

WO2009152036A1 ORGANIC ARC ETCH SELECTIVE FOR IMMERSION PHOTORESIST 审中-公开
标题翻译：有机电弧选择用于浸没光电子
公开(公告)号：WO2009152036A1
公开(公告)日：2009-12-17
申请号：PCT/US2009/046307
申请日：2009-06-04
申请人： LAM RESEARCH CORPORATION , ZHU, Helen, H. , CIRIGLIANO, Peter , SADJADI, S.M., Reza
发明人： ZHU, Helen, H. , CIRIGLIANO, Peter , SADJADI, S.M., Reza
IPC分类号： H01L21/3065 , H01L21/027
CPC分类号： H01L21/31138 , H01L21/31144
摘要： A method for forming etch features in an etch layer over a substrate and below an organic ARC layer, which is below an immersion lithography photoresist mask is provided. The substrate with the etch layer, organic ARC layer, and immersion lithography photoresist mask is placed into a processing chamber. The organic ARC layer is opened. The organic ARC layer opening comprises flowing an organic ARC open gas mixture into the processing chamber, wherein the organic ARC open gas mixture comprises an etchant gas and a polymerization gas comprising CO, forming an organic ARC open plasma from the organic ARC open gas mixture, etching the organic ARC layer with the organic ARC open plasma until the organic ARC layer is opened, and stopping the flow of organic ARC open gas mixture into the processing chamber before the etch layer is completely etched.
摘要翻译：提供了一种用于在衬底上方的蚀刻层中形成蚀刻特征的方法，并且在浸没式光刻光刻胶掩模下面的有机ARC层下面形成蚀刻特征。将具有蚀刻层，有机ARC层和浸没光刻光刻胶掩模的基板放置在处理室中。有机ARC层打开。有机ARC层开口包括将有机ARC开放气体混合物流入处理室，其中有机ARC开放气体混合物包含蚀刻剂气体和包含CO的聚合气体，从有机ARC开放气体混合物形成有机ARC开放等离子体，用有机ARC打开的等离子体蚀刻有机ARC层直到有机ARC层被打开，并且在刻蚀层被完全蚀刻之前停止有机ARC开放气体混合物流入处理室。

3. 发明申请

WO2007092114A1 REDUCING LINE EDGE ROUGHNESS 审中-公开
标题翻译：减少线边缘粗糙度
公开(公告)号：WO2007092114A1
公开(公告)日：2007-08-16
申请号：PCT/US2007/000573
申请日：2007-01-09
申请人： LAM RESEARCH CORPORATION , HUANG, Zhi-song , SADJADI, S.M., Reza , LI, Lumin , CHIANG, Conan
发明人： HUANG, Zhi-song , SADJADI, S.M., Reza , LI, Lumin , CHIANG, Conan
IPC分类号： H01L21/027
CPC分类号： H01L21/31144 , H01L21/0273 , H01L21/0337 , H01L21/0338
摘要： A method of forming features in an etch layer disposed below a mask with features is provided. The mask is conditioned. The conditioning, comprising providing a conditioning gas consisting essentially of at least one noble gas, forming a plasma from the conditioning gas, and exposing the mask to the plasma from the conditioning gas. The features of the mask are shrunk. Features are etched into the etch layer through the shrunk features of the mask.
摘要翻译：提供了一种在具有特征的掩模下方设置的蚀刻层中形成特征的方法。面具调理。该调理包括提供基本上由至少一种惰性气体组成的调节气体，从调节气体形成等离子体，并将掩模从调节气体暴露于等离子体。面具的特征缩小。通过掩模的收缩特征将特征蚀刻到蚀刻层中。

4. 发明申请

WO2007001647A1 MULTIPLE MASK PROCESS WITH ETCH MASK STACK 审中-公开
标题翻译：多层掩模工艺与蚀刻掩模
公开(公告)号：WO2007001647A1
公开(公告)日：2007-01-04
申请号：PCT/US2006/018144
申请日：2006-05-10
申请人： LAM RESEARCH CORPORATION , SADJADI, S.M., Reza
发明人： SADJADI, S.M., Reza
IPC分类号： H01L21/461
CPC分类号： H01L21/0338 , H01L21/0331 , H01L21/0337
摘要： A method for forming etch features in an etch layer over a substrate is provided. An etch mask stack is formed over the etch layer. A first mask is formed over the etch mask stack. A sidewall layer is formed over the first mask, which reduces the widths of the spaces defined by the first mask. A first set of features is etched into the etch mask stack through the sidewall layer. The mask and sidewall layer are removed. An additional feature step is performed, comprising forming an additional mask over the etch mask stack, forming a sidewall layer over the additional mask, etching a second set of features at least partially into the etch mask stack. A plurality of features is etched into the etch layer through the first set of features and the second set of features in the etch mask stack.
摘要翻译：提供了一种在衬底上的蚀刻层中形成蚀刻特征的方法。在蚀刻层上形成蚀刻掩模叠层。在蚀刻掩模叠层上形成第一掩模。在第一掩模上形成侧壁层，这减少了由第一掩模限定的空间的宽度。通过侧壁层将第一组特征蚀刻到蚀刻掩模叠层中。去除掩模和侧壁层。执行附加特征步骤，包括在蚀刻掩模叠层上形成附加掩模，在附加掩模上形成侧壁层，至少部分蚀刻第二组特征至蚀刻掩模叠层。多个特征通过第一组特征和蚀刻掩模叠层中的第二组特征蚀刻到蚀刻层中。

5. 发明申请

WO2006065630A2 REDUCTION OF ETCH MASK FEATURE CRITICAL DIMENSIONS 审中-公开
标题翻译：减少蚀刻特征的关键尺寸
公开(公告)号：WO2006065630A2
公开(公告)日：2006-06-22
申请号：PCT/US2005/044505
申请日：2005-12-06
申请人： LAM RESEARCH CORPORATION , HUANG, Zhisong , SADJADI, S.M., Reza , MARKS, Jeffrey
发明人： HUANG, Zhisong , SADJADI, S.M., Reza , MARKS, Jeffrey
CPC分类号： H01L21/67069 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： A method for forming features in an etch layer in an etch stack with an etch mask over the etch layer, wherein the etch mask has etch mask features with sidewalls, where the etch mask features have a first critical dimension, is provided. A cyclical critical dimension reduction is performed to form deposition layer features with a second critical dimension, which is less than the first critical dimension. Each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including the vertical sidewalls, of the etch mask features and an etching phase for etching back the deposition layer leaving a selective deposition on the vertical sidewalls. Features are etched into the etch layer, wherein the etch layer features have a third critical dimension, which is less than the first critical dimension.
摘要翻译：一种用于在蚀刻层上的蚀刻层中形成蚀刻层中的特征的方法，其中蚀刻掩模具有带侧壁的蚀刻掩模特征，其中蚀刻掩模特征具有第一临界尺寸。执行周期性临界尺寸降低以形成具有小于第一临界尺寸的第二临界尺寸的沉积层特征。每个循环包括沉积相，用于在包括垂直侧壁的蚀刻掩模特征的暴露表面上沉积沉积层，以及用于蚀刻回沉积层的蚀刻阶段，在垂直侧壁上留下选择性沉积。将特征蚀刻到蚀刻层中，其中蚀刻层特征具有小于第一临界尺寸的第三临界尺寸。

6. 发明申请

WO2004102277A3 METHOD PROVIDING AN IMPROVED BI-LAYER PHOTORESIST PATTERN 审中-公开
公开(公告)号：WO2004102277A3
公开(公告)日：2004-11-25
申请号：PCT/US2004/013818
申请日：2004-04-29
申请人： LAM RESEARCH CORPORATION , XIAO, Hanzhong , ZHU, Helen, H. , TANG, Kuo-Lung , SADJADI, S.M., Reza
发明人： XIAO, Hanzhong , ZHU, Helen, H. , TANG, Kuo-Lung , SADJADI, S.M., Reza
IPC分类号： G03F7/09
摘要： A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.

7. 发明申请

WO2010080655A2 SPACER FORMATION FOR ARRAY DOUBLE PATTERNING 审中-公开
标题翻译：用于阵列双重图案的间隔物形成
公开(公告)号：WO2010080655A2
公开(公告)日：2010-07-15
申请号：PCT/US2009/069292
申请日：2009-12-22
申请人： LAM RESEARCH CORPORATION , SADJADI, S.M., Reza , JAIN, Amit
发明人： SADJADI, S.M., Reza , JAIN, Amit
IPC分类号： H01L21/027
CPC分类号： H01L21/0337
摘要： A method for forming an array area with a surrounding periphery area, wherein a substrate is disposed under an etch layer, which is disposed under a patterned organic mask defining the array area and covers the entire periphery area is provided. The patterned organic mask is trimmed. An inorganic layer is deposited over the patterned organic mask where a thickness of the inorganic layer over the covered periphery area of the organic mask is greater than a thickness of the inorganic layer over the array area of the organic mask. The inorganic layer is etched back to expose the organic mask and form inorganic spacers in the array area, while leaving the organic mask in the periphery area unexposed. The organic mask exposed in the array area is stripped, while leaving the inorganic spacers in place and protecting the organic mask in the periphery area.
摘要翻译：一种用于形成具有周围周边区域的阵列区域的方法，其中衬底设置在蚀刻层下方，其设置在限定阵列区域并覆盖整个周边区域的图案化有机掩模下方。图案化的有机面罩被修剪。在图案化的有机掩模上沉积无机层，其中在有机掩模的被覆盖的周边区域上的无机层的厚度大于无机层在有机掩模的阵列区域上的厚度。将无机层回蚀刻以露出有机掩模并在阵列区域中形成无机间隔物，同时将外围区域中的有机掩模留置不暴露。剥离在阵列区域中暴露的有机掩模，同时将无机间隔物留在适当位置并保护外围区域中的有机掩模。

8. 发明申请

WO2007133442A1 PITCH REDUCTION 审中-公开
标题翻译：减少PITCH
公开(公告)号：WO2007133442A1
公开(公告)日：2007-11-22
申请号：PCT/US2007/010508
申请日：2007-04-30
申请人： LAM RESEARCH CORPORATION , HUANG, Zhisong , MARKS, Jeffrey , SADJADI, S.M., REZA
发明人： HUANG, Zhisong , MARKS, Jeffrey , SADJADI, S.M., REZA
IPC分类号： H01L21/033 , H01L21/308 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： A method for providing features in an etch layer is provided. A sacrificial patterned layer with sacrificial features is provided over an etch layer. Conformal sidewalls are formed in the sacrificial features, comprising at least two cycles of a sidewall formation process, wherein each cycle comprises a sidewall deposition phase and a sidewall profile shaping phase. Parts of the sacrificial patterned layer between conformal sidewalls are removed leaving the conformal sidewalls with gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed. Features are etched in the etch layer using the conformal sidewalls as an etch mask, wherein the features in the etch layer are etched through the gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed.
摘要翻译：提供了一种用于在蚀刻层中提供特征的方法。在蚀刻层上提供具有牺牲特征的牺牲图案层。保形侧壁形成在牺牲特征中，包括侧壁形成工艺的至少两个循环，其中每个循环包括侧壁沉积阶段和侧壁轮廓成形阶段。去除保形侧壁之间的牺牲图案层的部分，留下保形侧壁，其中保形侧壁之间的间隙被选择性地去除牺牲图案层的部分。使用保形侧壁作为蚀刻掩模在蚀刻层中蚀刻特征，其中蚀刻层中的特征被蚀刻通过牺牲图案层的部分被选择性去除的共形侧壁之间的间隙。

9. 发明申请

WO2006130319A2 CRITICAL DIMENSION REDUCTION AND ROUGHNESS CONTROL 审中-公开
标题翻译：关键尺寸减少和粗糙度控制
公开(公告)号：WO2006130319A2
公开(公告)日：2006-12-07
申请号：PCT/US2006/018142
申请日：2006-05-10
申请人： LAM RESEARCH CORPORATION , LEE, Sangheon , CHOI, Dae-Han , KIM, Jisoo , CIRIGLIANO, Peter , HUANG, Zhisong , CHARATAN, Robert , SADJADI, S.M., Reza
发明人： LEE, Sangheon , CHOI, Dae-Han , KIM, Jisoo , CIRIGLIANO, Peter , HUANG, Zhisong , CHARATAN, Robert , SADJADI, S.M., Reza
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。控制层的开口打开，控制层突破性化学。特征被刻蚀到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比保形层蚀刻更耐腐蚀。

10. 发明申请

WO2006121824A1 RETICLE ALIGNMENT AND OVERLAY FOR MULTIPLE RETICLE PROCESS 审中-公开
标题翻译：多个虚拟过程的对象对齐和覆盖
公开(公告)号：WO2006121824A1
公开(公告)日：2006-11-16
申请号：PCT/US2006/017338
申请日：2006-05-02
申请人： LAM RESEARCH CORPORATION , SADJADI, S.M., Reza , BRIGHT, Nicolas
发明人： SADJADI, S.M., Reza , BRIGHT, Nicolas
IPC分类号： G03F7/20 , H01L21/308
CPC分类号： H01L21/0338 , G03F7/70433 , G03F7/70466
摘要： A method for generating a plurality of reticle layouts is provided. A feature layout with a feature layout pitch is received. A plurality of reticle layouts are generated from the feature layout where each reticle layout of the plurality of reticle layouts has a reticle layout pitch and where each reticle layout pitch is at least twice the feature layout pitch.
摘要翻译：提供了一种用于产生多个标线布局的方法。接收具有特征布局间距的特征布局。从特征布局生成多个标线布局，其中多个标线布局的每个标线布局具有标线布局间距，并且其中每个标线布局间距至少是特征布局间距的两倍。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式