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    • 9. 发明申请
    • METHOD FOR PLASMA ETCHING USING PERIODIC MODULATION OF GAS CHEMISTRY
    • 使用气体化学周期性调制进行等离子体蚀刻的方法
    • WO2004093176B1
    • 2005-01-13
    • PCT/US2004010170
    • 2004-04-01
    • LAM RES CORPHUDSON ERIC ATIETZ JAMES V
    • HUDSON ERIC ATIETZ JAMES V
    • H01L21/302H01L21/3065H01L21/461
    • H01L21/31116H01L21/30655
    • A method for etching a layer over a substrate is provided. A gas-modulated cyclic process is performed for more than three cycles. Each cycle comprises performing a protective layer forming phase using first gas chemistry with a deposition gas chemistry, which is performed in about 0.0055 to 7 seconds for each cycle and performing an etching phase for the feature through the etch mask using a second gas chemistry using a reactive etching gas chemistry, which is performed in about 0.005 to 14 seconds for each cycle. The protective layer forming phase comprises providing the deposition gas and forming a plasma from the deposition gas. Each etching phase comprises providing a reactive etching gas and forming a plasma from the reactive etching gas.
    • 提供了一种用于在衬底上蚀刻层的方法。 进行气体调制循环过程超过三个循环。 每个循环包括使用具有沉积气体化学性质的第一气体化学物质执行保护层形成阶段,其在每个循环中以约0.0055至7秒进行,并且通过使用第二气体化学品通过蚀刻掩模对该特征进行蚀刻阶段, 反应性蚀刻气体化学,其在每个循环中以约0.005至14秒钟进行。 保护层形成阶段包括提供沉积气体并从沉积气体形成等离子体。 每个蚀刻阶段包括提供反应性蚀刻气体并从反应性蚀刻气体形成等离子体。
    • 10. 发明申请
    • METHOD FOR PLASMA ETCHING USING PERIODIC MODULATION OF GAS CHEMISTRY
    • 使用气体化学周期性调制进行等离子体蚀刻的方法
    • WO2004093176A1
    • 2004-10-28
    • PCT/US2004/010170
    • 2004-04-01
    • LAM RESEARCH CORPORATIONHUDSON, Eric, A.TIETZ, James, V.
    • HUDSON, Eric, A.TIETZ, James, V.
    • H01L21/302
    • H01L21/31116H01L21/30655
    • A method for etching a layer over a substrate is provided. A gas-modulated cyclic process is performed for more than three cycles. Each cycle comprises performing a protective layer forming phase using first gas chemistry with a deposition gas chemistry, which is performed in about 0.0055 to 7 seconds for each cycle and performing an etching phase for the feature through the etch mask using a second gas chemistry using a reactive etching gas chemistry, which is performed in about 0.005 to 14 seconds for each cycle. The protective layer forming phase comprises providing the deposition gas and forming a plasma from the deposition gas. Each etching phase comprises providing a reactive etching gas and forming a plasma from the reactive etching gas.
    • 提供了一种用于在衬底上蚀刻层的方法。 进行气体调制循环过程超过三个循环。 每个循环包括使用具有沉积气体化学性质的第一气体化学物质执行保护层形成阶段,其在每个循环中以约0.0055至7秒进行,并且通过使用第二气体化学品通过蚀刻掩模对该特征进行蚀刻阶段, 反应性蚀刻气体化学,其在每个循环中以约0.005至14秒钟进行。 保护层形成阶段包括提供沉积气体并从沉积气体形成等离子体。 每个蚀刻阶段包括提供反应性蚀刻气体并从反应性蚀刻气体形成等离子体。