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1. 发明申请

WO2010117964A2 METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE 审中-公开
标题翻译：具有减少损坏的低K电介质蚀刻方法
公开(公告)号：WO2010117964A2
公开(公告)日：2010-10-14
申请号：PCT/US2010/030008
申请日：2010-04-05
申请人： LAM RESEARCH CORPORATION , JI, Bing , TAKESHITA, Kenji , BAILEY, Andrew D., III , HUDSON, Eric A. , MORAVEJ, Maryam , SIRARD, Stephen M. , KO, Jungmin , LE, Daniel , HEFTY, Robert C. , CHENG, Yu , DELGADINO, Gerardo A. , YEN, Bi-Ming
发明人： JI, Bing , TAKESHITA, Kenji , BAILEY, Andrew D., III , HUDSON, Eric A. , MORAVEJ, Maryam , SIRARD, Stephen M. , KO, Jungmin , LE, Daniel , HEFTY, Robert C. , CHENG, Yu , DELGADINO, Gerardo A. , YEN, Bi-Ming
IPC分类号： H01L21/3065 , H05H1/34
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/31138
摘要： A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.
摘要翻译：通过本发明的实施例提供了一种用于蚀刻位于有机掩模下方的低k电介质层中的特征的方法。通过有机掩模将特征蚀刻到低k电介质层中。在低k电介质层上沉积氟碳层。氟碳层被固化。剥去有机面膜。

2. 发明申请

WO2007021540A2 ETCH FEATURES WITH REDUCED LINE EDGE ROUGHNESS 审中-公开
标题翻译：具有减少线边缘粗糙度的特征
公开(公告)号：WO2007021540A2
公开(公告)日：2007-02-22
申请号：PCT/US2006/030028
申请日：2006-08-01
申请人： LAM RESEARCH CORPORATION , SADJADI, S., M., Reza , HUDSON, Eric, A.
发明人： SADJADI, S., M., Reza , HUDSON, Eric, A.
CPC分类号： G03F7/40 , G03F7/405 , H01L21/0273 , H01L21/0337 , H01L21/31144
摘要： A method for forming a feature in a layer with reduced line edge roughening is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A sidewall layer with a thickness less than 100 nm is formed over the sidewalls of the photoresist features by performing for a plurality of cycles. Each cycle comprises depositing a layer on the photoresist layer wherein the deposited layer has a thickness between a monolayer to 20 nm. Features are etched into the layer through the photoresist features. The photoresist layer and sidewall layer are stripped.
摘要翻译：提供了一种在具有减少的线边缘粗糙度的层中形成特征的方法。在该层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。通过执行多个循环，在光致抗蚀剂特征的侧壁上形成厚度小于100nm的侧壁层。每个循环包括在光致抗蚀剂层上沉积一层，其中沉积层具有单层至20nm之间的厚度。通过光致抗蚀剂特征将特征蚀刻到该层中。剥离光致抗蚀剂层和侧壁层。

3. 发明申请

WO2006107495A1 ETCH PROFILE CONTROL 审中-公开
标题翻译： ETCH简档控制
公开(公告)号：WO2006107495A1
公开(公告)日：2006-10-12
申请号：PCT/US2006/008302
申请日：2006-03-07
申请人： LAM RESEARCH CORPORATION , RUSU, Camelia , HUANG, Zhisong , SRINIVASAN, Mukund , HUDSON, Eric, A. , EPPLER, Aaron
发明人： RUSU, Camelia , HUANG, Zhisong , SRINIVASAN, Mukund , HUDSON, Eric, A. , EPPLER, Aaron
IPC分类号： H01L21/311
CPC分类号： H01L21/31116
摘要： A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O2 and a sulfur component gas comprising at least one of H2S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.
摘要翻译：提供了一种用于在衬底上蚀刻介质层并且设置在掩模下方的方法。将基板放置在等离子体处理室中。包含O 2和包含至少一种H2S的硫成分气体的蚀刻剂气体和含有至少一个碳硫键的化合物被提供到等离子体室中。等离子体由蚀刻剂气体形成。通过来自蚀刻剂气体的等离子体通过光致抗蚀剂掩模将特征蚀刻到蚀刻层中。

4. 发明申请

WO2005024904A3 REDUCTION OF FEATURE CRITICAL DIMENSIONS 审中-公开
标题翻译：减少特征关键尺寸
公开(公告)号：WO2005024904A3
公开(公告)日：2006-06-15
申请号：PCT/US2004024853
申请日：2004-07-29
申请人： LAM RES CORP , KANG SEAN S , LEE SANGHEON , CHEN WAN-LIN , HUDSON ERIC A , SADJADI S M REZA , ZHAO GAN MING
发明人： KANG SEAN S , LEE SANGHEON , CHEN WAN-LIN , HUDSON ERIC A , SADJADI S M REZA , ZHAO GAN MING
IPC分类号： H01L21/44 , H01L21/033 , H01L21/311 , H01L21/768
CPC分类号： H01L21/76802 , H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/76816
摘要： A feature in a layer (308) is provided. A photoresist layer is formed over the layer (308). The photoresist layer is patterned to form photoresist features (312) with photoresist sidewalls, where the photoresist features (312) have a first critical dimension (316). A conformal layer (320) is deposited over the sidewalls of the photoresist features (312) to reduce the critical dimensions of the photoresist features (312). Features are etched into the layer (308), wherein the layer (308) features have a second critical dimension (324), which is less than the first critical dimension (316).
摘要翻译：提供层（308）中的特征。在层（308）之上形成光致抗蚀剂层。光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征（312），其中光致抗蚀剂特征（312）具有第一临界尺寸（316）。在光致抗蚀剂特征（312）的侧壁上沉积保形层（320），以减少光致抗蚀剂特征（312）的临界尺寸。特征被蚀刻到层（308）中，其中层（308）特征具有小于第一临界尺寸（316）的第二临界尺寸（324）。

5. 发明申请

WO2005122226A1 METHOD FOR PLASMA STRIPPING USING PERIODIC MODULATION OF GAS CHEMISTRY AND HYDROCARBON ADDITION 审中-公开
标题翻译：使用气体化学和碳氢化合物添加剂的周期性调节的等离子体分离方法
公开(公告)号：WO2005122226A1
公开(公告)日：2005-12-22
申请号：PCT/US2005/018784
申请日：2005-05-27
申请人： LAM RESEARCH CORPORATION , YUN, Seokmin , ZHU, Ji , CIRIGLIANO, Peter , LEE, Sangheon , CHOI, Thomas, S. , LOEWENHARDT, Peter , WILCOXSON, Mark, H. , SADJADI, Reza , HUDSON, Eric, A. , TIETZ, James, V.
发明人： YUN, Seokmin , ZHU, Ji , CIRIGLIANO, Peter , LEE, Sangheon , CHOI, Thomas, S. , LOEWENHARDT, Peter , WILCOXSON, Mark, H. , SADJADI, Reza , HUDSON, Eric, A. , TIETZ, James, V.
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76802 , H01L21/76829
摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase uses first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The stripping phase for stripping the photoresist mask uses a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.
摘要翻译：一种通过光刻胶蚀刻掩模在衬底上蚀刻低k电介质层中的特征的方法。执行气体调制的循环剥离工艺超过三个循环以剥离单个光致抗蚀剂掩模。气体调节循环汽提过程的每个循环包括进行保护层形成阶段和汽提阶段。保护层形成阶段使用具有沉积气体化学性质的第一气体化学，其中对于每个循环，保护层形成阶段在约0.005至10秒内进行。用于剥离光致抗蚀剂掩模的剥离阶段使用第二气体化学品，其使用剥离气体化学，其中第一气体化学物质不同于第二气体化学物质，其中蚀刻阶段在每个循环的约0.005至10秒内进行。

6. 发明申请

WO2006020344A1 METHOD FOR STRIPPING PHOTORESIST FROM ETCHED WAFER 审中-公开
标题翻译：从蚀刻波长剥离光刻胶的方法
公开(公告)号：WO2006020344A1
公开(公告)日：2006-02-23
申请号：PCT/US2005/025982
申请日：2005-07-20
申请人： LAM RESEARCH CORPORATION , HUDSON, Eric, A. , CIRIGLIANO, Peter
发明人： HUDSON, Eric, A. , CIRIGLIANO, Peter
IPC分类号： H01L21/311
CPC分类号： G03F7/427 , H01L21/31138
摘要： A method of forming a feature in a low-k (k 2 is provided. A plasma is formed from the stripping gas comprising CO 2 . The plasma from the stripping gas comprising CO 2 is used to strip the patterned photoresist mask.
摘要翻译：提供了在低k（k <3.0）电介质层中形成特征的方法。将低k电介质层放置在衬底上。将图案化的光致抗蚀剂掩模放置在低k电介质层上。至少一个特征被蚀刻到低k电介质层中。包含CO的汽提气体

7. 发明申请

WO2005022623B1 HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES 审中-公开
标题翻译：使用各种频率的RF功率的调制的高比例比较
公开(公告)号：WO2005022623B1
公开(公告)日：2005-05-26
申请号：PCT/US2004025406
申请日：2004-08-06
申请人： LAM RES CORP , RUSU CAMELIA , DHINDSA RAJINDER , HUDSON ERIC A , SRINIVASAN MUKUND , LI LUMIN , KOZAKEVICH FELIX
发明人： RUSU CAMELIA , DHINDSA RAJINDER , HUDSON ERIC A , SRINIVASAN MUKUND , LI LUMIN , KOZAKEVICH FELIX
IPC分类号： B23B3/10 , H01J37/32 , H01L21/311 , H01L21/467 , H05H1/46
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed (404) in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided (408) to the process chamber. A first etch step is provided (412) where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided (416), where the first frequency, the second frequency, and the third frequency are at a different power setting. Optionally, a third etch step may also be provided (420).
摘要翻译：提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。衬底被放置在处理室中，处理室能够提供第一频率的RF功率，不同于第一频率的第二频率以及不同于第一和第二频率的第三频率。向处理室提供蚀刻剂气体（408）。提供第一蚀刻步骤（412），其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。提供第二蚀刻步骤（416），其中第一频率，第二频率和第三频率处于不同的功率设置。可选地，还可以提供第三蚀刻步骤（420）。

8. 发明申请

WO2005024904A2 REDUCTION OF FEATURE CRITICAL DIMENSIONS 审中-公开
标题翻译：减少特征关键尺寸
公开(公告)号：WO2005024904A2
公开(公告)日：2005-03-17
申请号：PCT/US2004/024853
申请日：2004-07-29
申请人： LAM RESEARCH CORPORATION , KANG, Sean, S. , LEE, Sangheon , CHEN, Wan-Lin , HUDSON, Eric, A. , SADJADI, S., M., Reza , ZHAO, Gan, Ming
发明人： KANG, Sean, S. , LEE, Sangheon , CHEN, Wan-Lin , HUDSON, Eric, A. , SADJADI, S., M., Reza , ZHAO, Gan, Ming
IPC分类号： H01L
CPC分类号： H01L21/76802 , H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/76816
摘要： A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
摘要翻译：提供了一个图层中的一个特征。在该层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光致抗蚀剂特征具有第一临界尺寸。在光致抗蚀剂特征的侧壁上沉积保形层以减少光致抗蚀剂特征的临界尺寸。将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。

9. 发明申请

WO2004093176B1 METHOD FOR PLASMA ETCHING USING PERIODIC MODULATION OF GAS CHEMISTRY 审中-公开
标题翻译：使用气体化学周期性调制进行等离子体蚀刻的方法
公开(公告)号：WO2004093176B1
公开(公告)日：2005-01-13
申请号：PCT/US2004010170
申请日：2004-04-01
申请人： LAM RES CORP , HUDSON ERIC A , TIETZ JAMES V
发明人： HUDSON ERIC A , TIETZ JAMES V
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/461
CPC分类号： H01L21/31116 , H01L21/30655
摘要： A method for etching a layer over a substrate is provided. A gas-modulated cyclic process is performed for more than three cycles. Each cycle comprises performing a protective layer forming phase using first gas chemistry with a deposition gas chemistry, which is performed in about 0.0055 to 7 seconds for each cycle and performing an etching phase for the feature through the etch mask using a second gas chemistry using a reactive etching gas chemistry, which is performed in about 0.005 to 14 seconds for each cycle. The protective layer forming phase comprises providing the deposition gas and forming a plasma from the deposition gas. Each etching phase comprises providing a reactive etching gas and forming a plasma from the reactive etching gas.
摘要翻译：提供了一种用于在衬底上蚀刻层的方法。进行气体调制循环过程超过三个循环。每个循环包括使用具有沉积气体化学性质的第一气体化学物质执行保护层形成阶段，其在每个循环中以约0.0055至7秒进行，并且通过使用第二气体化学品通过蚀刻掩模对该特征进行蚀刻阶段，反应性蚀刻气体化学，其在每个循环中以约0.005至14秒钟进行。保护层形成阶段包括提供沉积气体并从沉积气体形成等离子体。每个蚀刻阶段包括提供反应性蚀刻气体并从反应性蚀刻气体形成等离子体。

10. 发明申请

WO2004093176A1 METHOD FOR PLASMA ETCHING USING PERIODIC MODULATION OF GAS CHEMISTRY 审中-公开
标题翻译：使用气体化学周期性调制进行等离子体蚀刻的方法
公开(公告)号：WO2004093176A1
公开(公告)日：2004-10-28
申请号：PCT/US2004/010170
申请日：2004-04-01
申请人： LAM RESEARCH CORPORATION , HUDSON, Eric, A. , TIETZ, James, V.
发明人： HUDSON, Eric, A. , TIETZ, James, V.
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/30655
摘要： A method for etching a layer over a substrate is provided. A gas-modulated cyclic process is performed for more than three cycles. Each cycle comprises performing a protective layer forming phase using first gas chemistry with a deposition gas chemistry, which is performed in about 0.0055 to 7 seconds for each cycle and performing an etching phase for the feature through the etch mask using a second gas chemistry using a reactive etching gas chemistry, which is performed in about 0.005 to 14 seconds for each cycle. The protective layer forming phase comprises providing the deposition gas and forming a plasma from the deposition gas. Each etching phase comprises providing a reactive etching gas and forming a plasma from the reactive etching gas.
摘要翻译：提供了一种用于在衬底上蚀刻层的方法。进行气体调制循环过程超过三个循环。每个循环包括使用具有沉积气体化学性质的第一气体化学物质执行保护层形成阶段，其在每个循环中以约0.0055至7秒进行，并且通过使用第二气体化学品通过蚀刻掩模对该特征进行蚀刻阶段，反应性蚀刻气体化学，其在每个循环中以约0.005至14秒钟进行。保护层形成阶段包括提供沉积气体并从沉积气体形成等离子体。每个蚀刻阶段包括提供反应性蚀刻气体并从反应性蚀刻气体形成等离子体。

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