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1. 发明申请

WO2010033434A2 SIDEWALL FORMING PROCESSES 审中-公开
标题翻译：侧壁成形工艺
公开(公告)号：WO2010033434A2
公开(公告)日：2010-03-25
申请号：PCT/US2009/056716
申请日：2009-09-11
申请人： LAM RESEARCH CORPORATION , CIRIGLIANO, Peter , ZHU, Helen , KIM, Ji Soo , SADJADI, S.M. Reza
发明人： CIRIGLIANO, Peter , ZHU, Helen , KIM, Ji Soo , SADJADI, S.M. Reza
IPC分类号： H01L21/3065
CPC分类号： H01L21/0337 , H01L21/31144 , H01L21/312
摘要： An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.
摘要翻译：提供在图案化的光刻胶掩模下面的蚀刻层。执行多个侧壁形成过程。每个侧壁形成过程包括通过执行多次循环沉积而在图案化的光刻胶掩模上沉积保护层。每个循环沉积至少包括用于在图案化的光刻胶掩模的表面上沉积沉积层的沉积阶段和用于在沉积层中成形垂直表面的轮廓成形阶段。每个侧壁形成工艺还包括用于选择性地蚀刻保护层相对于保护层的垂直表面的水平表面的突破蚀刻。之后，蚀刻蚀刻层以形成具有小于图案化光刻胶掩模中的特征的临界尺寸的临界尺寸的特征。

2. 发明申请

WO2005048335A1 MINIMIZING THE LOSS OF BARRIER MATERIALS DURING PHOTORESIST STRIPPING 审中-公开
标题翻译：在光电子剥离期间最小化障碍物材料的损失
公开(公告)号：WO2005048335A1
公开(公告)日：2005-05-26
申请号：PCT/US2004/037376
申请日：2004-11-09
申请人： LAM RESEARCH CORPORATION , ANNAPRAGADA, Rao , ZHU, Helen
发明人： ANNAPRAGADA, Rao , ZHU, Helen
IPC分类号： H01L21/302
CPC分类号： H01L21/76807 , G03F7/427 , H01L21/31138 , H01L21/31144 , H01L21/76801 , Y02P80/30
摘要： A method of removing a photoresist layer from an integrated circuit (IC) structure having an etched dielectric material with an exposed barrier layer that covers a copper interconnect. The barrier layer is composed of a material such as silicon 5 nitride or silicon carbide. The method includes feeding a gas mixture that compromises carbon monoxide (CO) into a reactor. A plasma is then generated within the reactor. The photoresist layer is then selectively removed with little or no etching of the exposed barrier layer.
摘要翻译：从具有蚀刻介电材料的集成电路（IC）结构去除光致抗蚀剂层的方法，其具有覆盖铜互连的暴露阻挡层。阻挡层由诸如硅5氮化物或碳化硅的材料组成。该方法包括将一氧化碳（CO）危害的气体混合物进料到反应器中。然后在反应器内产生等离子体。然后通过很少或没有蚀刻暴露的阻挡层来选择性地去除光致抗蚀剂层。

3. 发明申请

WO2005038892A1 A NITROUS OXIDE STRIPPING PROCESS FOR ORGANOSILICATE GLASS 审中-公开
标题翻译：用于有机玻璃的硝酸氧化物剥离方法
公开(公告)号：WO2005038892A1
公开(公告)日：2005-04-28
申请号：PCT/US2004/032793
申请日：2004-10-05
申请人： LAM RESEARCH CORPORATION , ANNAPRAGADA, Rao , ZHU, Helen
发明人： ANNAPRAGADA, Rao , ZHU, Helen
IPC分类号： H01L21/302
CPC分类号： H01L21/76808 , H01L21/31138 , H01L21/76811
摘要： A method of stripping an integrated circuit (IC) structure having a photoresist material and an organosilicate glass (OSG) material is described. The method comprises feeding a nitrous oxide (N2O) gas into a reactor, generating a plasma in the reactor and stripping the photoresist. The stripping process provides a high selectivity between the photoresist and the OSG material.
摘要翻译：描述了剥离具有光致抗蚀剂材料和有机硅酸盐玻璃（OSG）材料的集成电路（IC）结构的方法。该方法包括将一氧化二氮（N 2 O）气体进料到反应器中，在反应器中产生等离子体并剥离光致抗蚀剂。剥离工艺在光致抗蚀剂和OSG材料之间提供高选择性。

4. 发明申请

WO2005038906A1 AN ETCH BACK PROCESS USING NITROUS OXIDE 审中-公开
标题翻译：使用硝酸氧化物的回流工艺
公开(公告)号：WO2005038906A1
公开(公告)日：2005-04-28
申请号：PCT/US2004/032790
申请日：2004-10-05
申请人： LAM RESEARCH CORPORATION , ANNAPRAGADA, Rao , ZHU, Helen
发明人： ANNAPRAGADA, Rao , ZHU, Helen
IPC分类号： H01L21/8238
CPC分类号： H01L21/76808 , H01L21/0276 , H01L21/31138 , H01L21/31144
摘要： A method for generating an organic plug within a via is described. The via resides in an integrated circuit (IC) structure having a silicon containing dielectric material. The method for generating the organic plug includes applying an organic compound such as a bottom antireflective coating. The organic compound occupies the via. The method then proceeds to feed a nitrous oxide (N 2 0) gas into a reactor and generates a plasma in the reactor. A significant portion of the organic compound is removed leaving behind an organic plug to occupy the via. The organic plug is typically generated during dual damascene processing.
摘要翻译：描述了用于在通孔内产生有机插塞的方法。通孔位于具有含硅介电材料的集成电路（IC）结构中。用于产生有机插塞的方法包括施加有机化合物，例如底部抗反射涂层。有机化合物占据通孔。然后，该方法进行将一氧化二氮（N 2 O）气体进料到反应器中并在反应器中产生等离子体。去除有机化合物的重要部分，留下有机塞以占据通孔。有机插塞通常在双镶嵌处理期间产生。

5. 发明申请

WO2006122119A2 METHOD FOR RESIST STRIP IN PRESENCE OF REGULAR LOW K AND/OR POROUS LOW K DIELECTRIC MATERIALS 审中-公开
标题翻译：常规低K和/或多孔低介电材料存在的耐腐蚀条纹方法
公开(公告)号：WO2006122119A2
公开(公告)日：2006-11-16
申请号：PCT/US2006/017917
申请日：2006-05-08
申请人： LAM RESEARCH CORPORATION
发明人： ZHU, Helen , SADJADI, Reza
IPC分类号： H01L21/4763
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/02063
摘要： A two-step process is disclosed for stripping photoresist material from a substrate, wherein the substrate includes a low k dielectric material underlying the photoresist material and a polymer film overlying both the photoresist material and the low k dielectric material. The first step of the two-step process uses an oxygen plasma to remove the polymer film. The second step of the two-step process uses an ammonia plasma to remove the photoresist material, wherein the second step commences after completion of the first step. Each step of the two-step photoresist stripping process is respectively defined by particular values for process parameters including chemistry, temperature, pressure, gas flow rate, radio frequency power and frequency, and duration.
摘要翻译：公开了用于从基底剥离光致抗蚀剂材料的两步法，其中所述基底包括位于光致抗蚀剂材料下方的低k电介质材料和覆盖光致抗蚀剂材料和低k电介质材料的聚合物膜。两步法的第一步使用氧等离子体去除聚合物膜。两步法的第二步骤使用氨等离子体去除光致抗蚀剂材料，其中第二步骤在第一步骤完成之后开始。两步光刻胶剥离工艺的每个步骤分别由工艺参数的特定值定义，包括化学，温度，压力，气体流速，射频功率和频率以及持续时间。

6. 发明申请

WO2005012273A2 SUBSTITUTED THIAZOLES 审中-公开
标题翻译：替代THIAZOLES
公开(公告)号：WO2005012273A2
公开(公告)日：2005-02-10
申请号：PCT/US2004/024758
申请日：2004-07-30
申请人： ABBOTT LABORATORIES , ROBBINS, Timothy, A. , ZHU, Helen , SHAO, Jun
发明人： ROBBINS, Timothy, A. , ZHU, Helen , SHAO, Jun
IPC分类号： C07D277/56
CPC分类号： C07D277/56
摘要： This invention is directed to processes for making substituted thiazoles. The substituted thiazole, ethyl 2-(4-hydroxyphenyl)-4-methyl-1,3-thiazole-5-carboxylate, also known as TEI-6720, is useful for treatment of gout and hyperuricemia. This compound belongs to a class of substituted thiazoles that inhibit xanthine oxidase and thus block uric acid production.
摘要翻译：本发明涉及制备取代噻唑的方法。取代的噻唑，2-（4-羟基苯基）-4-甲基-1,3-噻唑-5-羧酸乙酯，也称为TEI-6720，可用于治疗痛风和高尿酸血症。该化合物属于一类抑制黄嘌呤氧化酶并因此阻断尿酸生产的取代噻唑类。

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