专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2005112093A2 GAS DISTRIBUTION SYSTEM HAVING FAST GAS SWITCHING CAPABILITIES 审中-公开
标题翻译：具有快速气体切换能力的气体分配系统
公开(公告)号：WO2005112093A2
公开(公告)日：2005-11-24
申请号：PCT/US2005/013582
申请日：2005-04-22
申请人： LAM RESEARCH CORPORATION , HUANG, Zhisong , SAM, Jose, Tong , LENZ, Eric , DHINDSA, Rajinder , SADJADI, Reza
发明人： HUANG, Zhisong , SAM, Jose, Tong , LENZ, Eric , DHINDSA, Rajinder , SADJADI, Reza
IPC分类号： H01L21/306
CPC分类号： C23C16/45561 , C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.
摘要翻译：提供了一种用于将诸如等离子体处理装置的等离子体处理室之类的不同气体成分供应到腔室的气体分配系统。气体分配系统可以包括气体供应部分，流量控制部分和切换部分。气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。切换部分优选地包括快速切换阀，其可操作以快速打开和关闭，以允许第一和第二气体的快速切换，优选地，在任一气体的流动中不发生不期望的压力波动或流动不稳定性。

2. 发明申请

WO2008061069A1 FAST GAS SWITCHING PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：快速开关等离子体加工设备
公开(公告)号：WO2008061069A1
公开(公告)日：2008-05-22
申请号：PCT/US2007/084465
申请日：2007-11-12
申请人： LAM RESEARCH CORPORATION , SADJADI, Raza, S., M. , HUANG, Zhisong , SAM, Jose, Tong , LENZ, Eric, H. , DHINDSA, Rajinder
发明人： SADJADI, Raza, S., M. , HUANG, Zhisong , SAM, Jose, Tong , LENZ, Eric, H. , DHINDSA, Rajinder
IPC分类号： H01L21/205
CPC分类号： H01J37/32091 , H01J37/32155 , H01J37/3244 , H01J37/32449
摘要： A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.
摘要翻译：提供具有电极等离子体限制区的等离子体室。用于提供第一气体和第二气体的气体分配系统连接到等离子体室，其中气体分配系统可以在小于1秒的时间内基本上替换等离子体区域中的一种气体与另一种气体。用于在第一频率范围内为电极提供功率的第一频率调谐RF电源电连接到至少一个电极，其中第一频率调谐的RF功率源能够最小化反射的RF功率。用于在第一频率范围之外的第二频率范围内为等离子体室提供功率的第二频率调谐RF电源，其中第二频率调谐的RF功率源能够使反射的RF功率最小化。

3. 发明申请

WO2004034445A3 A METHOD FOR PLASMA ETCHING PERFORMANCE ENHANCEMENT 审中-公开
公开(公告)号：WO2004034445A3
公开(公告)日：2004-04-22
申请号：PCT/US2003/031712
申请日：2003-10-06
申请人： LAM RESEARCH CORPORATION , LI, Lumin , SADJADI, Reza , HUANG, Zhisong
发明人： HUANG, Zhisong
IPC分类号： H01L21/311
摘要： A method for etching a feature in a layer through an etching mask is provided. A protective layer is formed on exposed surfaces of the etching mask and vertical sidewalls of the feature with a passivation gas mixture. The feature is etched through the etching mask with reactive etching mixtures containing at least one etching chemical and at least one passivation chemical.

4. 发明申请

WO2006019849A1 LOW-K DIELECTRIC ETCH 审中-公开
标题翻译：低K电介质
公开(公告)号：WO2006019849A1
公开(公告)日：2006-02-23
申请号：PCT/US2005/024905
申请日：2005-07-12
申请人： LAM RESEARCH CORPORATION , KANG, Sean, S. , HUANG, Zhisong , SADJADI, Reza, S., M.
发明人： KANG, Sean, S. , HUANG, Zhisong , SADJADI, Reza, S., M.
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/31116
摘要： A method for etching a dielectric layer below a photoresist mask is provided. A wafer with the dielectric layer disposed below a photoresist mask is provided in an etch chamber. An etch gas comprising CF 4 and H 2 is provided into the etch chamber wherein the CF 4 has a flow rate and the H 2 has a flow rate, wherein the flow rate of H 2 is greater than the flow rate of CF 4 . A plasma is formed from the etch gas. Features are etched into the dielectric layer through the etch mask using the plasma formed from the etch gas.
摘要翻译：提供了一种用于蚀刻光致抗蚀剂掩模下面的介电层的方法。在蚀刻室中提供具有设置在光致抗蚀剂掩模下方的介电层的晶片。一种包含CF <

5. 发明申请

WO2006096528A3 STABILIZED PHOTORESIST STRUCTURE FOR ETCHING PROCESS 审中-公开
公开(公告)号：WO2006096528A3
公开(公告)日：2006-09-14
申请号：PCT/US2006/007643
申请日：2006-03-02
申请人： LAM RESEARCH CORPORATION , SADJADI, S. M. Reza , HUDSON, Eric, A. , CIRIGLIANO, Peter , KIM, Ji Soo , HUANG, Zhisong
发明人： SADJADI, S. M. Reza , HUDSON, Eric, A. , CIRIGLIANO, Peter , KIM, Ji Soo , HUANG, Zhisong
IPC分类号： H01L21/027 , G03F7/40
摘要： A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.

6. 发明申请

WO2007041423A9 VERTICAL PROFILE FIXING 审中-公开
公开(公告)号：WO2007041423A9
公开(公告)日：2007-04-12
申请号：PCT/US2006/038299
申请日：2006-09-29
申请人： LAM RESEARCH CORPORATION , SADJADI, S.M. Reza , CIRIGLIANO, Peter , KIM, Jisoo , HUANG, Zhisong , HUDSON, Eric A.
发明人： SADJADI, S.M. Reza , CIRIGLIANO, Peter , KIM, Jisoo , HUANG, Zhisong , HUDSON, Eric A.
IPC分类号： H01L21/311 , H01L21/027 , G03F7/40
摘要： A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.

7. 发明申请

WO2006065630A2 REDUCTION OF ETCH MASK FEATURE CRITICAL DIMENSIONS 审中-公开
标题翻译：减少蚀刻特征的关键尺寸
公开(公告)号：WO2006065630A2
公开(公告)日：2006-06-22
申请号：PCT/US2005/044505
申请日：2005-12-06
申请人： LAM RESEARCH CORPORATION , HUANG, Zhisong , SADJADI, S.M., Reza , MARKS, Jeffrey
发明人： HUANG, Zhisong , SADJADI, S.M., Reza , MARKS, Jeffrey
CPC分类号： H01L21/67069 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： A method for forming features in an etch layer in an etch stack with an etch mask over the etch layer, wherein the etch mask has etch mask features with sidewalls, where the etch mask features have a first critical dimension, is provided. A cyclical critical dimension reduction is performed to form deposition layer features with a second critical dimension, which is less than the first critical dimension. Each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including the vertical sidewalls, of the etch mask features and an etching phase for etching back the deposition layer leaving a selective deposition on the vertical sidewalls. Features are etched into the etch layer, wherein the etch layer features have a third critical dimension, which is less than the first critical dimension.
摘要翻译：一种用于在蚀刻层上的蚀刻层中形成蚀刻层中的特征的方法，其中蚀刻掩模具有带侧壁的蚀刻掩模特征，其中蚀刻掩模特征具有第一临界尺寸。执行周期性临界尺寸降低以形成具有小于第一临界尺寸的第二临界尺寸的沉积层特征。每个循环包括沉积相，用于在包括垂直侧壁的蚀刻掩模特征的暴露表面上沉积沉积层，以及用于蚀刻回沉积层的蚀刻阶段，在垂直侧壁上留下选择性沉积。将特征蚀刻到蚀刻层中，其中蚀刻层特征具有小于第一临界尺寸的第三临界尺寸。

8. 发明申请

WO2008137670A1 HARDMASK OPEN AND ETCH PROFILE CONTROL WITH HARDMASK OPEN 审中-公开
标题翻译： HARDMASK打开和调试配置控制与HARDMASK开放
公开(公告)号：WO2008137670A1
公开(公告)日：2008-11-13
申请号：PCT/US2008/062411
申请日：2008-05-02
申请人： LAM RESEARCH CORPORATION , LEE, Jong Pil , KAWAGUCHI, Seiji , RUSU, Camelia , HUANG, Zhisong , SRINIVASAN, Mukund , HUDSON, Eric , EPPLER, Aaron
发明人： LEE, Jong Pil , KAWAGUCHI, Seiji , RUSU, Camelia , HUANG, Zhisong , SRINIVASAN, Mukund , HUDSON, Eric , EPPLER, Aaron
IPC分类号： H01L21/3065 , H01L21/302
CPC分类号： H01L21/31144 , H01L21/31122
摘要： A method for opening a carbon-based hardmask layer formed on an etch layer over a substrate is provided. The hardmask layer is disposed below a patterned mask. The substrate is placed in a plasma processing chamber. The hardmask layer is opened by flowing a hardmask opening gas including a COS component into the plasma chamber, forming a plasma from the hardmask opening gas, and stopping the flow of the hardmask opening gas. The hardmask layer may be made of amorphous carbon, or made of spun-on carbon, and the hardmask opening gas may further include O 2 .
摘要翻译：提供了一种用于打开形成在衬底上的蚀刻层上的碳基硬掩模层的方法。硬掩模层设置在图案化掩模下方。将基板放置在等离子体处理室中。通过将包括COS成分的硬掩模开口气体流入等离子体室来打开硬掩模层，从硬掩模开口气体形成等离子体，并阻止硬掩模开口气体的流动。硬掩模层可以由无定形碳制成，或由旋涂碳制成，并且硬掩模开口气体可以进一步包括O 2。

9. 发明申请

WO2007133442A1 PITCH REDUCTION 审中-公开
标题翻译：减少PITCH
公开(公告)号：WO2007133442A1
公开(公告)日：2007-11-22
申请号：PCT/US2007/010508
申请日：2007-04-30
申请人： LAM RESEARCH CORPORATION , HUANG, Zhisong , MARKS, Jeffrey , SADJADI, S.M., REZA
发明人： HUANG, Zhisong , MARKS, Jeffrey , SADJADI, S.M., REZA
IPC分类号： H01L21/033 , H01L21/308 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： A method for providing features in an etch layer is provided. A sacrificial patterned layer with sacrificial features is provided over an etch layer. Conformal sidewalls are formed in the sacrificial features, comprising at least two cycles of a sidewall formation process, wherein each cycle comprises a sidewall deposition phase and a sidewall profile shaping phase. Parts of the sacrificial patterned layer between conformal sidewalls are removed leaving the conformal sidewalls with gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed. Features are etched in the etch layer using the conformal sidewalls as an etch mask, wherein the features in the etch layer are etched through the gaps between the conformal sidewalls where parts of the sacrificial patterned layer were selectively removed.
摘要翻译：提供了一种用于在蚀刻层中提供特征的方法。在蚀刻层上提供具有牺牲特征的牺牲图案层。保形侧壁形成在牺牲特征中，包括侧壁形成工艺的至少两个循环，其中每个循环包括侧壁沉积阶段和侧壁轮廓成形阶段。去除保形侧壁之间的牺牲图案层的部分，留下保形侧壁，其中保形侧壁之间的间隙被选择性地去除牺牲图案层的部分。使用保形侧壁作为蚀刻掩模在蚀刻层中蚀刻特征，其中蚀刻层中的特征被蚀刻通过牺牲图案层的部分被选择性去除的共形侧壁之间的间隙。

10. 发明申请

WO2006130319A2 CRITICAL DIMENSION REDUCTION AND ROUGHNESS CONTROL 审中-公开
标题翻译：关键尺寸减少和粗糙度控制
公开(公告)号：WO2006130319A2
公开(公告)日：2006-12-07
申请号：PCT/US2006/018142
申请日：2006-05-10
申请人： LAM RESEARCH CORPORATION , LEE, Sangheon , CHOI, Dae-Han , KIM, Jisoo , CIRIGLIANO, Peter , HUANG, Zhisong , CHARATAN, Robert , SADJADI, S.M., Reza
发明人： LEE, Sangheon , CHOI, Dae-Han , KIM, Jisoo , CIRIGLIANO, Peter , HUANG, Zhisong , CHARATAN, Robert , SADJADI, S.M., Reza
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。控制层的开口打开，控制层突破性化学。特征被刻蚀到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比保形层蚀刻更耐腐蚀。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式