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1. 发明申请

WO2006049954A3 METHODS FOR PROTECTING SILICON OR SILICON CARBIDE ELECTRODE SURFACES FROM MORPHOLOGICAL MODIFICATION DURING PLASMA ETCH PROCESSING 审中-公开
公开(公告)号：WO2006049954A3
公开(公告)日：2006-05-11
申请号：PCT/US2005/038373
申请日：2005-10-26
申请人： LAM RESEARCH CORPORATION , CHEN, Wan-lin , TAKESHITA, Kenji , ASO, Tsuyoshi , KAWAGUCHI, Seiji , MCCLARD, Thomas , MAGNI, Enrico , KELLY, Michael , LUPAN, Michelle , HEFTY, Robert
发明人： CHEN, Wan-lin , TAKESHITA, Kenji , ASO, Tsuyoshi , KAWAGUCHI, Seiji , MCCLARD, Thomas , MAGNI, Enrico , KELLY, Michael , LUPAN, Michelle , HEFTY, Robert
IPC分类号： H01L21/302
摘要： Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.

2. 发明申请

WO0207142A8 OCB LIQUID CRYSTAL DISPLAY WITH ACTIVE MATRIX AND SUPPLEMENTAL CAPACITORS AND DRIVING METHOD FOR THE SAME 审中-公开
标题翻译：有源矩阵和补充电容器的OCB液晶显示器及其驱动方法
公开(公告)号：WO0207142A8
公开(公告)日：2002-04-11
申请号：PCT/JP0106203
申请日：2001-07-18
申请人： MATSUSHITA ELECTRIC IND CO LTD , NAKAO KENJI , UEMURA TSUYOSHI , KAWAGUCHI SEIJI , KOBAYASHI JUNICHI , MACHIDORI WATARU , ARIMOTO KATSUYUKI
发明人： NAKAO KENJI , UEMURA TSUYOSHI , KAWAGUCHI SEIJI , KOBAYASHI JUNICHI , MACHIDORI WATARU , ARIMOTO KATSUYUKI
IPC分类号： G09G3/34 , G09G3/36
CPC分类号： G09G3/36 , G09G3/3406 , G09G3/3655 , G09G3/3659 , G09G2310/06
摘要： A liquid crystal display comprises: a liquid crystal layer capable of bend orientation; a display screen on which an image is displayed by light transmitted through a bend-oriented liquid crystal layer; and a liquid crystal voltage application means for applying a liquid crystal voltage to the liquid crystal layer according to luminance information for each field of image information composed of serial fields, the liquid crystal voltage being applied to cause transmittance of the light to change, thereby sequentially displaying the image corresponding to the fields of the image information, and when the luminance information changes between current and subsequent fields, the liquid crystal voltage application means applies the liquid crystal voltage which changes so as to have a value according to the luminance information by the time the liquid crystal voltage is applied for the subsequent field.
摘要翻译：液晶显示器包括：能够弯曲取向的液晶层; 通过透过弯曲取向液晶层的光显示图像的显示屏; 以及液晶电压施加装置，用于根据由串行场组成的图像信息的每场的亮度信息将液晶电压施加到液晶层，液晶电压被施加以使光的透射率改变，由此顺序地显示与图像信息的场相对应的图像，并且当亮度信息在当前场和后续场之间改变时，液晶电压施加装置施加改变的液晶电压，使得具有根据亮度信息的值时间液晶电压被施加到后续场。

3. 发明申请

WO1986004843A1 AUTOMATIC SOLDERING APPARATUS 审中-公开
标题翻译：自动焊接设备
公开(公告)号：WO1986004843A1
公开(公告)日：1986-08-28
申请号：PCT/JP1985000083
申请日：1985-02-25
申请人： KAWAGUCHI, Seiji
IPC分类号： B23K03/00
CPC分类号： B23K3/0615 , B23K3/00
摘要： An automatic soldering apparatus, in which a base portion of a holder (23) extending a free end portion (soldering nozzle) (30) of a feed tube (10), which is used to guide a wire solder (22), toward a free end of a trowel tip (9) and supporting the free end portion (30) in the vicinity of the tip (9) is held on base plates (24, 54), which can be lowered and positioned with respect to this tip (9), via a spring, and tilted longitudinally, laterally and diagonally with respect to the tip (9) depending or how far a plurality of adjusting screws provided on the base plates (24, 54) project, whereby the wire solder (22) can be supplied to the trowel tip (9) in the desired positional relation therewith irrespective of the degree of wear of the trowel tip (9) in continuous use.

4. 发明申请

WO1989008527A1 METHOD AND APPARATUS FOR REMOVING DEFECTIVE SOLDER 审中-公开
标题翻译：用于去除有缺陷的焊锡的方法和装置
公开(公告)号：WO1989008527A1
公开(公告)日：1989-09-21
申请号：PCT/JP1989000190
申请日：1989-02-23
申请人： APOLLO SEIKO LTD. , KAWAGUCHI, Seiji
发明人： APOLLO SEIKO LTD.
IPC分类号： B23K03/00
CPC分类号： B23K3/00 , B23K1/018 , H05K13/0491
摘要： The method and apparatus for removing defective solder according to the present invention are characterized by pressing a suction wire onto the defective solder on a printed board, heat melting the defective solder while supplying a small quantity of molten solder to the suction wire, and removing the melted defective solder by sucking utilizing a capillary action of the suction wire. Therefore, even when a soldering operation fails with defective solder remaining on a printed board, the defective solder can be removed simply without fail. This enables the re-soldering to be done easily and the overall efficiency of a soldering operation to be improved. When the apparatus is provided with the soldering function in addition to the defective solder removing function, a correct soldering operation can be carried out immediately after the defective solder has been removed. Since the defective solder is removed by utilizing the capillarity of the suction wire, i.e., a physical phenomenon, troubles rarely occur involving the defective solder removing operation, and the maintenance work for the apparatus can be advantageously carried out.
摘要翻译：根据本发明的用于去除有缺陷的焊料的方法和装置的特征在于将吸力线压在印刷电路板上的有缺陷的焊料上，将不良焊料加热熔化，同时向抽吸线提供少量熔融焊料，通过利用吸力丝的毛细管作用进行抽吸来熔化有缺陷的焊料。因此，即使当焊接操作失败并且印刷电路板上残留的焊料残留时，也可以简单地将不良焊料去除。这使得可以容易地进行重新焊接，并且提高焊接操作的整体效率。除了有缺陷的焊料去除功能之外，当设备具有焊接功能时，可以在有缺陷的焊料被去除之后立即进行正确的焊接操作。由于通过利用吸引线的毛细管力即物理现象去除了有缺陷的焊料，所以很难发生涉及有缺陷的焊料去除操作的麻烦，并且可以有利地进行装置的维护工作。

5. 发明申请

WO2008137670A1 HARDMASK OPEN AND ETCH PROFILE CONTROL WITH HARDMASK OPEN 审中-公开
标题翻译： HARDMASK打开和调试配置控制与HARDMASK开放
公开(公告)号：WO2008137670A1
公开(公告)日：2008-11-13
申请号：PCT/US2008/062411
申请日：2008-05-02
申请人： LAM RESEARCH CORPORATION , LEE, Jong Pil , KAWAGUCHI, Seiji , RUSU, Camelia , HUANG, Zhisong , SRINIVASAN, Mukund , HUDSON, Eric , EPPLER, Aaron
发明人： LEE, Jong Pil , KAWAGUCHI, Seiji , RUSU, Camelia , HUANG, Zhisong , SRINIVASAN, Mukund , HUDSON, Eric , EPPLER, Aaron
IPC分类号： H01L21/3065 , H01L21/302
CPC分类号： H01L21/31144 , H01L21/31122
摘要： A method for opening a carbon-based hardmask layer formed on an etch layer over a substrate is provided. The hardmask layer is disposed below a patterned mask. The substrate is placed in a plasma processing chamber. The hardmask layer is opened by flowing a hardmask opening gas including a COS component into the plasma chamber, forming a plasma from the hardmask opening gas, and stopping the flow of the hardmask opening gas. The hardmask layer may be made of amorphous carbon, or made of spun-on carbon, and the hardmask opening gas may further include O 2 .
摘要翻译：提供了一种用于打开形成在衬底上的蚀刻层上的碳基硬掩模层的方法。硬掩模层设置在图案化掩模下方。将基板放置在等离子体处理室中。通过将包括COS成分的硬掩模开口气体流入等离子体室来打开硬掩模层，从硬掩模开口气体形成等离子体，并阻止硬掩模开口气体的流动。硬掩模层可以由无定形碳制成，或由旋涂碳制成，并且硬掩模开口气体可以进一步包括O 2。

6. 发明申请

WO2006028673A1 ETCH WITH UNIFORMITY CONTROL 审中-公开
标题翻译：具有均匀性控制
公开(公告)号：WO2006028673A1
公开(公告)日：2006-03-16
申请号：PCT/US2005/029308
申请日：2005-08-17
申请人： LAM RESEARCH CORPORATION , KAWAGUCHI, Seiji , TAKESHITA, Kenji
发明人： KAWAGUCHI, Seiji , TAKESHITA, Kenji
IPC分类号： H01L21/311 , H01L21/027
CPC分类号： H01L21/0271 , H01L21/0332 , H01L21/0334 , H01L21/0337 , H01L21/31116 , H01L21/31144
摘要： A method of forming semiconductor devices on a wafer is provided. An etch layer is formed over a wafer. A photoresist mask is formed over the etch layer. The photoresist mask is removed only around an outer edge of the wafer to expose the etch layer around the outer edge of the wafer. A deposition gas is provided comprising carbon and hydrogen containing species. A plasma is formed from the deposition gas. A polymer layer is deposited on the exposed etch layer around the outer edge of the wafer, wherein the polymer is formed from the plasma from the deposition gas. The etch layer is etched through the photoresist mask, while consuming the photoresist mask and the polymer deposited on the exposed etch layer around the outer edge of the wafer.
摘要翻译：提供了一种在晶片上形成半导体器件的方法。在晶片上形成蚀刻层。在蚀刻层上形成光致抗蚀剂掩模。仅在晶片的外边缘周围除去光致抗蚀剂掩模，以暴露围绕晶片的外边缘的蚀刻层。提供包含碳和氢的物质的沉积气体。从沉积气体形成等离子体。聚合物层沉积在围绕晶片的外边缘的暴露的蚀刻层上，其中聚合物由来自沉积气体的等离子体形成。通过光致抗蚀剂掩模蚀刻蚀刻层，同时消耗光刻胶掩模和沉积在围绕晶片的外边缘的暴露的蚀刻层上的聚合物。

7. 发明申请

WO2006049954A2 METHODS FOR PROTECTING SILICON OR SILICON CARBIDE ELECTRODE SURFACES FROM MORPHOLOGICAL MODIFICATION DURING PLASMA ETCH PROCESSING 审中-公开
标题翻译：在等离子体处理过程中从形态修饰中保护硅或碳化硅电极表面的方法
公开(公告)号：WO2006049954A2
公开(公告)日：2006-05-11
申请号：PCT/US2005038373
申请日：2005-10-26
申请人： LAM RES CORP , CHEN WAN-LIN , TAKESHITA KENJI , ASO TSUYOSHI , KAWAGUCHI SEIJI , MCCLARD THOMAS , MAGNI ENRICO , KELLY MICHAEL , LUPAN MICHELLE , HEFTY ROBERT
发明人： CHEN WAN-LIN , TAKESHITA KENJI , ASO TSUYOSHI , KAWAGUCHI SEIJI , MCCLARD THOMAS , MAGNI ENRICO , KELLY MICHAEL , LUPAN MICHELLE , HEFTY ROBERT
IPC分类号： B44C1/22 , B08B6/00 , H01L21/311
CPC分类号： B08B7/0035 , B05D1/62 , H01J37/32559 , H01L21/31116
摘要： Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.
摘要翻译：提供了在等离子体处理室的硅或碳化硅电极上形成保护性聚合物涂层的方法。相对于暴露于等离子体和气态反应物的组分，聚合物涂层为电极的下表面提供保护。可以在清洁室的过程中或在用于蚀刻室中的半导体衬底的工艺期间执行这些方法。

8. 发明申请

WO1986004844A1 AUTOMATIC SOLDERING METHOD AND APPARATUS 审中-公开
标题翻译：自动焊接方法和装置
公开(公告)号：WO1986004844A1
公开(公告)日：1986-08-28
申请号：PCT/JP1985000084
申请日：1985-02-25
申请人： KAWAGUCHI, Seiji
IPC分类号： B23K03/00
CPC分类号： B23K3/00 , B23K3/0615
摘要： An automatic soldering method and apparatus, which are capable of carrying out with a high accuracy and a high efficiency a point soldering operation using a wire solder (14) with respect to a work surface. The soldering method consists of the steps of lowering a soldering trowel (12) toward a work surface (4, 72) by an air cylinder (9), carrying out a primary solder feeding operation by extending a wire solder (14) to a position a little lower than the soldering trowel simultaneously with the air cylinder lowering operation, melting this wire solder with a free end portion of the soldering trowel (12), wetting the free end portion of the soldering trowel (12), bringing the soldering trowel (12) into contact with the work surface (4, 72) to wet the same as well while heating the same, and carrying out a secondary solder feeding operation by extending the wire solder (14) again toward the free end of the soldering trowel (12).

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