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    • 10. 发明申请
    • PACKAGE WITH PASSIVATED INTERCONNECTS
    • 包装与被钝化的相互连接
    • WO2018013311A1
    • 2018-01-18
    • PCT/US2017/038656
    • 2017-06-22
    • INTEL CORPORATION
    • BOYAPATI, Sri Ranga SaiMANEPALLI, Rahul N.SENEVIRATNE, DilanPIETAMBARAM, Srinivas V.DARMAWIKARTA, KristofMAY, Robert AlanSALAMA, Islam A.
    • H01L23/485H01L23/48H01L23/31H01L25/065
    • The passivation layer may be any suitable dielectric material that may overlie a build-up dielectric layer and metal traces of an interconnect layer in a semiconductor package. Via holes may be formed in the build-up dielectric and the passivation layer may be removed from the bottom of the via hole. By removing the passivation layer at the bottom of the via hole, any residual build-up dielectric may also be removed from the bottom of the via hole. Thus removal of the residual build-up dielectric may not require a desmear process that would otherwise roughen metal and/or dielectric surfaces. The resulting smoother metal and/or dielectric surfaces enabled by the use of the passivation layer may allow greater process latitude and/or flexibility to fabricate relatively smaller dimensional interconnect features and/or relatively improved signaling frequency and integrity.
    • 钝化层可以是可以覆盖半导体封装中的互连层的构建介电层和金属迹线的任何合适的介电材料。 可以在增层介质中形成通孔,并且可以从通孔的底部去除钝化层。 通过去除通孔底部的钝化层,还可以从通孔底部去除任何残留的积累电介质。 因此去除残余积层电介质可能不需要否则会使金属和/或电介质表面变粗糙的去污处理。 通过使用钝化层实现的更平滑的金属和/或电介质表面可以允许更大的工艺宽容度和/或灵活性来制造相对较小的尺寸互连特征和/或相对提高的信号频率和完整性。