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1. 发明申请

WO2011025733A1 NANOWIRE-BASED PHOTOVOLTAIC ENERGY CONVERSION DEVICES AND RELATED FABRICATION METHODS 审中-公开
标题翻译：基于纳米级的光伏能量转换器件及相关制造方法
公开(公告)号：WO2011025733A1
公开(公告)日：2011-03-03
申请号：PCT/US2010/046334
申请日：2010-08-23
申请人： INTERNATIONAL SOLARTECH, INC. , WANG, Shih-Ping , KOBAYASHI, Nobuhiko , HOUNG, Yu-Min
发明人： WANG, Shih-Ping , KOBAYASHI, Nobuhiko , HOUNG, Yu-Min
IPC分类号： G02F1/035 , G02F1/01 , G02F1/295
CPC分类号： H01L31/035227
摘要： Nanowire-based photovoltaic energy conversion devices and related fabrication methods therefor are described. A plurality of photovoltaic (PV) nanowires extend outwardly from a surface layer of a substrate, each PV nanowire having a root end near the substrate surface layer and a tip end opposite the root end. For one preferred embodiment, a canopy-style tip-side electrode layer contacts the tip ends of the PV nanowires and is separated from the substrate surface layer by an air gap layer, the PV nanowires being disposed within the air gap layer. For another preferred embodiment, a tip-side electrode layer is disposed upon a layer of optically transparent, electrically insulating solid filler material that laterally surrounds the PV nanowires along a portion of their lengths, wherein an air gap is disposed between the solid filler layer and the substrate surface layer. Methods for fabricating the nanowire-based photovoltaic energy conversion devices are also described.
摘要翻译：描述了基于纳米线的光能转换装置及其制造方法。多个光伏（PV）纳米线从衬底的表面层向外延伸，每个PV纳米线具有靠近衬底表面层的根端和与根端相对的尖端。对于一个优选实施例，冠盖式末端侧电极层接触PV纳米线的末端，并通过气隙层与衬底表面层分离，PV纳米线设置在气隙层内。对于另一个优选实施例，尖端侧电极层设置在沿其长度的一部分横向围绕PV纳米线的光学透明的电绝缘固体填充材料层上，其中气隙设置在固体填充层和衬底表面层。还描述了制造基于纳米线的光能转换装置的方法。

2. 发明申请

WO2008106219A1 METHODS OF FORMING NANOSTRUCTURES ON METAL-SILICIDE CRYSTALLITES, AND RESULTING STRUCTURES AND DEVICES 审中-公开
标题翻译：在金属硅化物晶体上形成纳米结构的方法和结构和器件
公开(公告)号：WO2008106219A1
公开(公告)日：2008-09-04
申请号：PCT/US2008/002699
申请日：2008-02-28
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. , KOBAYASHI, Nobuhiko , WANG, Shih-Yuan
发明人： KOBAYASHI, Nobuhiko , WANG, Shih-Yuan
IPC分类号： B82B3/00
CPC分类号： H01L29/86 , B82Y10/00 , H01L21/0237 , H01L21/02521 , H01L21/02543 , H01L21/02603 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/0673 , H01L31/101
摘要： Various embodiments of the present invention are directed to methods of forming nanostructures on non-single crystal substrates, and resulting nanostructures and nanoscale functional devices. In one embodiment of the present invention, a method of forming nanostructures includes forming a multi-layer structure (106) comprising a metallic layer (100) and a silicon layer (104). The multi-layer structure (106) is subjected to a thermal process to form metal-silicide crystallites (110). The nanostructures (114) are grown on the metal-silicide crystallites (110). In another embodiment of the present invention, a structure includes a non-single- crystal substrate (102) and a layer (108) formed over the non-single-crystal substrate (102). The layer (108) includes metal-silicide crystallites (110). A number of nanostructures (114) may be formed on the metal-silicide crystallites (110). The disclosed structures may be used to form a number of different types of functional devices for use in electronics and/or optoelectronics devices.
摘要翻译：本发明的各种实施方案涉及在非单晶衬底上形成纳米结构的方法，以及所得的纳米结构和纳米级功能器件。在本发明的一个实施例中，形成纳米结构的方法包括形成包括金属层（100）和硅层（104）的多层结构（106）。对多层结构（106）进行热处理以形成金属硅化物微晶（110）。在金属硅化物微晶（110）上生长纳米结构（114）。在本发明的另一实施例中，结构包括非单晶衬底（102）和形成在非单晶衬底（102）上的层（108）。层（108）包括金属硅化物微晶（110）。可以在金属硅化物微晶（110）上形成许多纳米结构（114）。所公开的结构可以用于形成许多用于电子和/或光电子器件的不同类型的功能器件。

3. 发明申请

WO2012034078A1 PHOTOVOLTAIC NANOWIRE STRUCTURES AND RELATED FABRICATION METHODS 审中-公开
标题翻译：光伏纳米结构和相关制造方法
公开(公告)号：WO2012034078A1
公开(公告)日：2012-03-15
申请号：PCT/US2011/051091
申请日：2011-09-09
申请人： WANG, Shih-Ping , HOUNG, Yu-Min , KOBAYASHI, Nobuhiko
发明人： WANG, Shih-Ping , HOUNG, Yu-Min , KOBAYASHI, Nobuhiko
IPC分类号： H01L31/00
CPC分类号： H01L31/035236 , H01L21/02521 , H01L21/02603 , H01L21/02639 , H01L21/02664 , H01L31/035227 , H01L31/03921 , H01L31/075 , H01L31/18 , H01L31/1804 , H01L31/206 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Nanowire-based photovoltaic energy conversion devices and related fabrication methods therefor are described. A plurality of photovoltaic (PV) nanowires extend outwardly from a surface layer of a substrate, each PV nanowire having a root end near the substrate surface layer and a tip end opposite the root end. For some embodiments, a collar material is formed that laterally surrounds and is in contact with the PV nanowires along a portion of one or more of their ends. According to some embodiments, the PV nanowires are formed on a crystalline silicon substrate. According to some other embodiments, the PV nanowires are formed on a roll-sourced continuous substrate.
摘要翻译：描述了基于纳米线的光能转换装置及其制造方法。多个光伏（PV）纳米线从衬底的表面层向外延伸，每个PV纳米线具有靠近衬底表面层的根端和与根端相对的尖端。对于一些实施例，形成轴环材料，其横向包围并沿其一个或多个端部的一部分与PV纳米线接触。根据一些实施方案，在晶体硅衬底上形成PV纳米线。根据一些其它实施方案，PV纳米线形成在辊来源的连续衬底上。

4. 发明申请

WO2010087853A1 PHOTOVOLTAIC STRUCTURE AND SOLAR CELL AND METHOD OF FABRICATION EMPLOYING HIDDEN ELECTRODE 审中-公开
标题翻译：光伏结构和太阳能电池及其制造方法使用隐形电极
公开(公告)号：WO2010087853A1
公开(公告)日：2010-08-05
申请号：PCT/US2009/032729
申请日：2009-01-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY , MATHAI, Sagi V. , KOBAYASHI, Nobuhiko , WANG, Shih-yuan
发明人： MATHAI, Sagi V. , KOBAYASHI, Nobuhiko , WANG, Shih-yuan
IPC分类号： H01L31/042
CPC分类号： H01L31/022425 , H01L31/0352 , Y02E10/50
摘要： A photovoltaic structure (100), a solar cell (100, 200) and a method (300) of fabricating a solar cell (100, 200) employ a hidden electrode (122, 222, 422) on a formed (320) mesa (120, 220, 420) and a bramble (130, 230, 430) of grown (330) nanowires. The mesa includes an insulator island (121, 221, 421) adjacent to a surface of the substrate (110, 210, 410) and the hidden electrode buried under a seed layer on the insulator island. One end of some of the nanowires (134, 234) is anchored to the seed layer (124, 224, 424) of the mesa. One end of others of the nanowires (132, 232) is anchored to a seed layer (114, 214, 414) formed (310) on the substrate adjacent to the mesa. The seed layers independently are an extrinsic semiconductor. A semiconductor junction includes the seed layers and some of the nanowires of the bramble.
摘要翻译：太阳能电池（100,200）和制造太阳能电池（100,200）的方法（300）在所形成的（320）台面（320）上采用隐藏电极（122,222,422） 120,220,420）和生长（330）纳米线的荆棘（130,230,430）。所述台面包括邻近所述基板（110,210,410）的表面的绝缘体岛（121,221,421），以及埋在所述绝缘体岛上的种子层下方的所述隐藏电极。一些纳米线（134,234）的一端被锚定到台面的种子层（124,224,424）。纳米线（132,232）的另一端锚定在与台面相邻的基板上形成的种子层（114,214,414）上。种子层独立地是非本征半导体。半导体结包括种子层和荆棘的一些纳米线。

5. 发明申请

WO2010071658A1 PHOTOVOLTAIC STRUCTURE AND METHOD OF FABRICATION EMPLOYING NANOWIRE ON STUB 审中-公开
标题翻译：光伏结构和制造NANOWIRE在STUB上的制造方法
公开(公告)号：WO2010071658A1
公开(公告)日：2010-06-24
申请号：PCT/US2008/087848
申请日：2008-12-19
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , MATHAI, Sagi, V. , KOBAYASHI, Nobuhiko, P. , WANG, Shih-Yuan
发明人： MATHAI, Sagi, V. , KOBAYASHI, Nobuhiko, P. , WANG, Shih-Yuan
IPC分类号： H01L31/042
CPC分类号： H01L31/1836 , H01L31/035281 , H01L31/03529 , H01L31/1824 , H01L31/1852 , Y02E10/544 , Y02E10/545 , Y02P70/521
摘要： A photovoltaic structure (105) of a photovoltaic cell (100), (200) and a method (300) of fabricating a photovoltaic structure (105), (100), (200) employ a nanowire (140) having a base connected to a stub (120) and an electrical isolation layer (130) surrounding the stub. The stub is a constituent of a substrate surface (112). The nanowire extends away from the substrate surface and is wider than the stub. The nanowire base overlies a part of the isolation layer that is adjacent to the stub. A semiconductor junction comprises the nanowire. The method (300) includes forming (320) the stub; growing (340) the nanowire from the stub; and conformally coating (360) the nanowire. A nanoparticle (150) is applied (322) to the substrate surface. The isolation layer is created (324) on and embedded in the substrate surface using the nanoparticle as a mask. A portion of the substrate surface underlying the nanoparticle forms the stub. The nanoparticle (150) catalyzes nanowire growth (340) on the stub. The stub is narrower than the nanoparticle.
摘要翻译：（200）的光伏结构（105），（200）和制造光伏结构（105）的方法（300），（100），（200）使用纳米线（140），其具有连接到短管（120）和围绕短截线的电隔离层（130）。短截线是基底表面（112）的组成部分。纳米线远离基板表面延伸，并且比短截线宽。纳米线基底覆盖与短截线相邻的隔离层的一部分。半导体结包括纳米线。方法（300）包括：形成（320）短截线; 从存根生长（340）纳米线; 并共形涂覆（360）纳米线。将纳米颗粒（150）施加（322）到基底表面。使用纳米颗粒作为掩模，在隔离层上形成（324）并嵌入基板表面。纳米颗粒下面的基底表面的一部分形成短截线。纳米颗粒（150）催化该短截线上的纳米线生长（340）。短截线比纳米颗粒窄。

6. 发明申请

WO2009023065A2 NANOWIRE PHOTODIODES AND METHODS OF MAKING NANOWIRE PHOTODIODES 审中-公开
标题翻译：纳米级光电二极管及制备纳米级光电二极管的方法
公开(公告)号：WO2009023065A2
公开(公告)日：2009-02-19
申请号：PCT/US2008007931
申请日：2008-06-25
申请人： HEWLETT PACKARD DEVELOPMENT CO , WANG SHIH-YUAN , TAN MICHAEL , BRATKOVSKI ALEXANDRE , WILLIAMS R STANLEY , KOBAYASHI NOBUHIKO
发明人： WANG SHIH-YUAN , TAN MICHAEL , BRATKOVSKI ALEXANDRE , WILLIAMS R STANLEY , KOBAYASHI NOBUHIKO
CPC分类号： G02B6/4202 , B82Y20/00 , G02B6/305 , G02B6/4236 , H01L31/03529 , Y02E10/50 , Y10S977/765
摘要： Nanowire-based photodiodes (100, 200, 300, 400) are disclosed. The photodiodes include a first optical waveguide (102, 202, 302, 402) having a tapered first end (106, 206, 306, 406), a second optical waveguide (104, 204, 304, 404) having a tapered second end (110, 210, 310, 410), and at least one nanowire (114, 214, 314, 414) comprising at least one semiconductor material connecting the first and second ends (108, 112, 208, 212, 308, 312, 408, 412) in a bridging configuration. Methods of making the photodiodes are also disclosed.
摘要翻译：公开了基于纳米线的光电二极管（100,200,300,400）。光电二极管包括具有锥形第一端（106,206,306,406）的第一光波导（102,202,302,402），具有锥形第二端（106,206,306,406）的第二光波导（104,204,304,404）和至少一个纳米线（114,214,314,414），所述至少一个纳米线（114,214,314,414）包括连接所述第一端和所述第二端（108,112,208,212,308,312,408,412）的至少一种半导体材料， 412）以桥接配置。还公开了制造光电二极管的方法。

7. 发明申请

WO2011014176A1 NANOWIRE-BASED SYSTEMS FOR PERFORMING RAMAN SPECTROSCOPY 审中-公开
标题翻译：用于执行拉曼光谱的基于纳米级的系统
公开(公告)号：WO2011014176A1
公开(公告)日：2011-02-03
申请号：PCT/US2009/052308
申请日：2009-07-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , WANG, Shih-Yuan , LI, Jingjing , KUO, Huei, Pei , FATTAL, David, A. , KOBAYASHI, Nobuhiko , LI, Zhiyong
发明人： WANG, Shih-Yuan , LI, Jingjing , KUO, Huei, Pei , FATTAL, David, A. , KOBAYASHI, Nobuhiko , LI, Zhiyong
IPC分类号： G01J3/44
CPC分类号： G01N21/658 , B82Y15/00 , G01J3/44
摘要： Embodiments of the present invention are directed to nanowire-based systems for performing surface-enhanced Raman spectroscopy. In one embodiment, a system comprises a substrate (102) having a surface and a plurality of tapered nanowires (104) disposed on the surface. Each nanowire has a tapered end directed away from the surface. The system also includes a plurality of nanoparticles (110) disposed near the tapered end of each nanowire. When each nanowire is illuminated with light of a pump wavelength, Raman excitation light is emitted from the tapered end of the nanowire to interact with the nanoparticles and produce enhanced Raman scattered light from molecules located in close proximity to the nanoparticles.
摘要翻译：本发明的实施方案涉及用于进行表面增强拉曼光谱的基于纳米线的系统。在一个实施例中，系统包括具有表面的基板（102）和设置在表面上的多个锥形纳米线（104）。每个纳米线具有远离表面的锥形端。该系统还包括在每个纳米线的锥形端附近设置的多个纳米颗粒（110）。当每个纳米线被泵浦波长的光照射时，拉曼激发光从纳米线的锥形端发射以与纳米颗粒相互作用，并从位于紧邻纳米颗粒的分子产生增强的拉曼散射光。

8. 发明申请

WO2011014175A1 NANOWIRE LIGHT CONCENTRATORS FOR PERFORMING RAMAN SPECTROSCOPY 审中-公开
标题翻译：用于执行拉曼光谱的纳米级光集中器
公开(公告)号：WO2011014175A1
公开(公告)日：2011-02-03
申请号：PCT/US2009/052288
申请日：2009-07-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , KUO, Huei Pei , WANG, Shih-Yuan , FATTAL, David A. , LI, Jingjing , KOBAYASHI, Nobuhiko , LI, Zhiyong
发明人： KUO, Huei Pei , WANG, Shih-Yuan , FATTAL, David A. , LI, Jingjing , KOBAYASHI, Nobuhiko , LI, Zhiyong
IPC分类号： G01N21/65 , B82B3/00
CPC分类号： G01N21/658
摘要： Embodiments of the present invention are directed to systems for performing surface-enhanced Raman spectroscopy. In one embodiment, a system (100, 400, 600, 800, 900, 950) for performing Raman spectroscopy comprises a substrate (102) substantially transparent to a range of wavelengths of electromagnetic radiation and a plurality of nanowires (104, 602) disposed on a surface of the substrate. The nanowires are substantially transparent to the range of wavelengths of electromagnetic radiation. The system includes a material disposed on each of the nanowires. The electromagnetic radiation is transmitted within the substrate, into the nanowires, and emitted from the ends of the nanowires to produce enhanced Raman scattered light from molecules located on or in proximity to the material.
摘要翻译：本发明的实施例涉及用于进行表面增强拉曼光谱的系统。在一个实施例中，用于执行拉曼光谱的系统（100,400,600,800,900,950）包括对电磁辐射的波长范围基本上透明的基底（102）和设置的多个纳米线（104,602）在基板的表面上。纳米线对于电磁辐射的波长范围基本上是透明的。该系统包括设置在每个纳米线上的材料。电磁辐射在衬底内传输到纳米线中，并从纳米线的端部发射，以产生来自位于材料上或附近的分子的增强的拉曼散射光。

9. 发明申请

WO2009008923A3 METHODS OF MAKING NANO-SCALE STRUCTURES HAVING CONTROLLED SIZE, NANOWIRE STRUCTURES AND METHODS OF MAKING THE NANOWIRE STRUCTURES 审中-公开
标题翻译：纳米结构纳米结构的制备方法，纳米结构和纳米结构的制备方法
公开(公告)号：WO2009008923A3
公开(公告)日：2009-08-20
申请号：PCT/US2008004423
申请日：2008-04-02
申请人： HEWLETT PACKARD DEVELOPMENT CO , KOBAYASHI NOBUHIKO , WU WEI , STEWART DUNCAN , SHARMA SHASHANK , WANG SHIH-YUAN , WILLIAMS R STANLEY
发明人： KOBAYASHI NOBUHIKO , WU WEI , STEWART DUNCAN , SHARMA SHASHANK , WANG SHIH-YUAN , WILLIAMS R STANLEY
IPC分类号： B82B3/00 , B82B1/00
CPC分类号： H01L31/035281 , B82Y10/00 , B82Y30/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L31/036 , H01L31/09 , H01L31/101 , H01L31/105 , Y02E10/50 , Y10S977/762 , Y10S977/814
摘要： Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures (200, 300, 400, 500, 600. 700) that include one or ore nanowires (104, 204, 304, 404, 504, 604, 704) are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.
摘要翻译：公开了制造具有可控尺寸的纳米级半导体结构的方法。还公开了包括一个或多个纳米线（104,204,304,404,504,604,704）的半导体结构（200,300,400,500,600,700）。纳米线可以包括钝化层或具有中空管结构。

10. 发明申请

WO2009023045A3 NANOWIRE-BASED OPTO-ELECTRONIC DEVICES 审中-公开
标题翻译：基于纳米线的光电器件
公开(公告)号：WO2009023045A3
公开(公告)日：2009-06-04
申请号：PCT/US2008005399
申请日：2008-04-25
申请人： HEWLETT PACKARD DEVELOPMENT CO , KOBAYASHI NOBUHIKO , WANG SHIH-YUAN , ISLAM M SAIFUL , KUEKES PHILIP J
发明人： WANG SHIH-YUAN , ISLAM M SAIFUL , KUEKES PHILIP J
IPC分类号： H01L31/02 , H01L31/10
CPC分类号： H01S5/341 , B82Y20/00 , H01L31/035281 , H01L31/09 , H01L31/1025 , H01S5/021 , H01S5/125 , H01S5/3412 , H01S5/4031 , H01S5/5018 , H01S5/5072 , H01S2301/14 , Y02E10/50 , Y10S977/762
摘要： Nanowire-based opto-electronic devices (100, 200, 300, 400, 500) including nanowire layers, photodetectors and semiconductor optical amplifiers are disclosed. The devices include nanowires (114, 214, 324, 434, 436, 560, 562) grown from single crystal and/or non-single surfaces. The semiconductor optical amplifiers include nanowire arrays that act as ballast lasers to amplify a signal carried by a signal waveguide. Embodiments of the nanowire lasers and photodetectors include horizontal and vertical nanowires (434, 436, 562, 560) that can provide different ploarizations.
摘要翻译：公开了包括纳米线层，光电探测器和半导体光放大器的基于纳米线的光电子器件（100,200,300,400,500）。器件包括从单晶和/或非单表面生长的纳米线（114,214,324,434,436,560,562）。半导体光放大器包括充当镇流器激光器以放大信号波导所携带的信号的纳米线阵列。纳米线激光器和光检测器的实施例包括可提供不同分化的水平和垂直纳米线（434,436,562,560）。

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