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1. 发明申请

WO2018169627A2 ELECTRIC FIELD DRIVEN ASSEMBLY OF ORDERED NANOCRYSTAL SUPERLATTICES 审中-公开
公开(公告)号：WO2018169627A2
公开(公告)日：2018-09-20
申请号：PCT/US2018/017686
申请日：2018-02-09
申请人： LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
发明人： YU, Yixuan , KUNTZ, Joshua D. , ORME, Christine A. , PASCALL, Andrew J.
CPC分类号： C25D13/22 , C25D13/12 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02628 , H01L31/0324 , H01L31/035236 , H01L31/036
摘要： An electric field drives nanocrystals dispersed in solvents to assemble into ordered three-dimensional superlattices. A first electrode and a second electrode 214 are in the vessel. The electrodes face each other. A fluid containing charged nanocrystals fills the vessel between the electrodes. The electrodes are connected to a voltage supply which produces an electrical field between the electrodes. The nanocrystals will migrate toward one of the electrodes and accumulate on the electrode producing ordered nanocrystal accumulation that will provide a superlattice thin film, isolated superlattice islands, or coalesced superlattice islands.

2. 发明申请

WO2018111037A1 실리콘 양자점 정밀제어 및 활성화에 의한 광활성층 및 이의 제조방법 审中-公开
公开(公告)号：WO2018111037A1
公开(公告)日：2018-06-21
申请号：PCT/KR2017/014850
申请日：2017-12-15
申请人： 한국표준과학연구원
发明人： 김경중 , 곽계영 , 이성현 , 김안순
IPC分类号： H01L31/0352 , H01L31/18 , H01L31/036 , H01L33/04 , H01L33/00
CPC分类号： H01L31/0352 , H01L31/036 , H01L31/18 , H01L33/00 , H01L33/04 , Y02P70/521
摘要： 본 발명은 실리콘 양자점 광활성층 및 이의 제조방법에 관한 것으로, 상세하게,본 발명에 따른 실리콘 양자점 광활성층의 제조방법은 a) 실리콘-풍부(silicon-rich)의 인트린직 실리콘화합물층을 형성하는 단계; b) 상기 인트린직 실리콘화합물층에 펄스 레이저를 조사하여 실리콘화합물인 매질에 실리콘 양자점이 형성된 실리콘양자점층을 형성하는 단계; 및 c) 상기 실리콘양자점층에 도핑원소를 주입하고, 활성화하여 광활성층을 제조하는 단계;를 포함한다.

3. 发明申请

WO2017167867A1 SILIZIUMWAFER, VERFAHREN ZUM STRUKTURIEREN EINES SILIZIUMWAFERS UND SOLARZELLE 审中-公开
标题翻译：硅晶片，用于构造硅晶片和太阳能电池的方法
公开(公告)号：WO2017167867A1
公开(公告)日：2017-10-05
申请号：PCT/EP2017/057524
申请日：2017-03-30
申请人： TECHNISCHE UNIVERSITÄT BERGAKADEMIE FREIBERG
发明人： STAPF, André , GONDEK, Christoph , HONEIT, Florian , KROKE, Edwin
IPC分类号： H01L31/0236 , H01L31/036 , H01L31/18 , H01L21/306
CPC分类号： H01L31/02363 , H01L31/036 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Gemäß verschiedenen Ausführungsformen wird ein Siliziumwafer (202) bereitgestellt, welcher eine { 100 } -orientierte Oberfläche (202a) aufweist, wobei die Oberfläche (202a) eine Oberflächenstruktur (204) aus einer Vielzahl von zufällig verteilten Vertiefungen aufweist, wobei die Vertiefungen polyederförmig sind.
摘要翻译：
宝石。具有表面（202A），其中所述表面BEAR;各种示例性导航使用的硅晶片（202）引导的形状提供，其中有一个{100}取向的表面＆AUML表面（202A）具有表面BEAR完全分布;多个zuf＆AUML的chenstruktur（204）井，其中井是polyederfummig ..

4. 发明申请

WO2017154612A1 導電性ペースト及び太陽電池审中-公开
标题翻译：导电膏和太阳能电池
公开(公告)号：WO2017154612A1
公开(公告)日：2017-09-14
申请号：PCT/JP2017/006994
申请日：2017-02-24
申请人：ナミックス株式会社
发明人：坂田　賢一
IPC分类号： H01B1/22 , H01L21/28 , H01L31/0224
CPC分类号： H01L31/022425 , H01B1/16 , H01B1/22 , H01L21/28 , H01L23/4828 , H01L31/02167 , H01L31/036 , Y02E10/50 , Y02P70/521
摘要：結晶系シリコン太陽電池のｐ型半導体層と導通するために用いられる電極の形成するために用いられる導電性ペーストであって、焼成の際、導電性ペーストが反射防止膜をファイアースルーすることができ、ｐ型半導体層に低い接触抵抗の電極を形成することのできる導電性ペーストを提供する。　太陽電池の電極形成用の導電性ペーストであって、導電性ペーストが、（Ａ）導電性粉末、（Ｂ）平均粒子径が０．５～３．５μｍのＡｌ粉末又はＡｌ化合物粉末、（Ｃ）ガラスフリット、及び（Ｄ）有機媒体を含み、（Ａ）導電性粉末１００重量部に対して、（Ｂ）Ａｌ粉末又はＡｌ化合物粉末を０．５～５重量部含む、導電性ペーストである。
摘要翻译：导电浆料用于形成用于与晶体硅太阳能电池的p型半导体层导电的电极，并且该导电浆料经受抗反射提供一种能够通过膜烧制并且能够在p型半导体层中形成具有低接触电阻的电极的导电膏。一种用于形成太阳能电池电极的导电浆料，其中导电浆料是（A）导电粉末，（B）平均粒径为0.5-3.5μm的Al粉末或Al化合物粉末，（C ）玻璃料和（D）有机介质，和（B）相对于（A）导电粉末100重量份，（B）Al粉末或Al化合物粉末0.5〜5重量份。

5. 发明申请

WO2017083293A1 BORON NITRIDE CARBON ALLOY SOLAR CELLS 审中-公开
标题翻译：硼氮化物碳合金太阳能电池
公开(公告)号：WO2017083293A1
公开(公告)日：2017-05-18
申请号：PCT/US2016/060971
申请日：2016-11-08
申请人： UNIVERSITY OF NEW HAMPSHIRE
发明人： LASHMORE, David S.
IPC分类号： H01L31/032 , C01B35/14 , C01B31/02 , H01L31/0392 , H01L31/042
CPC分类号： C01B35/14 , C01P2004/13 , H01L31/032 , H01L31/036 , H01L31/0687
摘要： Solar cells fabricated from p-n junctions of boron nitride nanotubes alloyed with carbon are described. Band gaps of boron nitride carbon alloys are tailored by controlling carbon content in the boron nitride nanotubes. High efficiency solar cells can be fabricated by tailoring the band gap of boron nitride carbon alloy nanotubes, and using these nanotubes for fabricating solar cells u. Because boron nitride carbon alloy nanotubes are transparent to most wavelengths of light, the wavelengths not converted to electrons (i.e., absorbed) at a first p-n junction in a solar cell will pass through the stack to another p-n junction in the stack having a different band gap. At each successive p-n junction, each of which has a different band gap from the other p-n junctions in the stack, more wavelengths of light will be converted into electricity. This dramatically increases the efficiency of solar cells.
摘要翻译：描述了由与碳合金化的氮化硼纳米管的p-n结制造的太阳能电池。氮化硼碳合金的带隙通过控制氮化硼纳米管中的碳含量来调整。高效太阳能电池可以通过调整氮化硼碳合金纳米管的带隙并使用这些纳米管制造太阳能电池来制造。因为氮化硼碳合金纳米管对于大多数波长的光是透明的，所以在太阳能电池中的第一pn结处没有转换为电子（即被吸收）的波长将穿过堆叠到具有不同带的堆叠中的另一个pn结间隙。在每个连续的p-n结处，每个p-n结与堆叠中的其他p-n结具有不同的带隙，更多波长的光将被转换成电。这大大提高了太阳能电池的效率。

6. 发明申请

WO2016077587A2 CREATION OF HYPERDOPED SEMICONDUCTORS WITH CONCURRENT HIGH CRYSTALLINITY AND HIGH SUB-BANDGAP ABSORPTANCE USING NANOSECOND LASER ANNEALING 审中-公开
标题翻译：使用纳斯达克激光退火技术创造出具有一致的高结晶度和高次级带隙吸收的超高分子半导体
公开(公告)号：WO2016077587A2
公开(公告)日：2016-05-19
申请号：PCT/US2015060385
申请日：2015-11-12
申请人： HARVARD COLLEGE
发明人： MAZUR ERIC , FRANTA BENJAMIN , AZIZ MICHAEL J , PASTOR DAVID
IPC分类号： H01L21/223
CPC分类号： H01L21/2686 , B23K26/0624 , B23K26/0732 , B23K26/0738 , H01L21/02532 , H01L21/02686 , H01L21/268 , H01L29/0665 , H01L31/02363 , H01L31/0288 , H01L31/036 , H01L31/068 , H01L31/1804 , H01L31/1864 , H01L31/1872
摘要： In one aspect, a method of processing a semiconductor substrate is disclosed, which comprises incorporating at least one dopant in a semiconductor substrate so as to generate a doped polyphase surface layer on a light-trapping surface, and optically annealing the surface layer via exposure to a plurality of laser pulses having a pulsewidth in a range of about 1 nanosecond to about 50 nanoseconds so as to enhance crystallinity of said doped surface layer while maintaining high above-bandgap, and in many embodiments sub-bandgap optical absorptance.
摘要翻译：一方面，公开了一种处理半导体衬底的方法，其包括在半导体衬底中引入至少一种掺杂剂，以便在光俘获表面上产生掺杂的多相表面层，并通过暴露于具有在约1纳秒至约50纳秒范围内的脉冲宽度的多个激光脉冲，以便增强所述掺杂表面层的结晶度，同时保持高的带隙，并且在许多实施例中为子带隙光吸收。

7. 发明申请

WO2016022527A1 ENGINEERED BAND GAPS 审中-公开
标题翻译：工程胶带GAPS
公开(公告)号：WO2016022527A1
公开(公告)日：2016-02-11
申请号：PCT/US2015/043549
申请日：2015-08-04
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY
发明人： LI, Ju , QIAN, Xiaofeng , WU, Menghao
IPC分类号： H01L31/0352 , H01L31/036 , H05B33/08
CPC分类号： B01J19/127 , H01L21/02568 , H01L21/02609 , H01L29/045 , H01L31/0264 , H01L31/035236 , H01L31/036 , H01L31/072 , H01L31/109 , H01L31/186 , H01L33/002 , H01L33/04 , H01L2933/0033 , Y02E10/50
摘要： An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, an optoelectronic device includes first and second semiconducting atomically thin layers with corresponding first and second lattice directions. The first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° deviant from of a Vicnal angle of the first and second semiconducting atomically thin layers. Alternatively, or in addition to the above, the first and second semiconducting atomically thin layers may form a Moire superlattice of exciton funnels with a period between about 50 nm to 3 cm. The optoelectronic device may also include charge carrier conductors in electrical communication with the semiconducting atomically thin layers to either inject or extract charge carriers.
摘要翻译：公开了一种光电器件及其使用和制造方法。在一个实施例中，光电子器件包括具有对应的第一和第二晶格方向的第一和第二半导体原子薄层。第一和第二半导电原子薄层位于彼此附近，并且第一晶格方向和第二晶格方向之间的角度差在Vicnal的约0.000001°至0.5°之间，或约0.000001°和0.5°之间第一和第二半导电原子薄层的角度。或者或除了上述之外，第一和第二半导体原子薄层可以形成具有在约50nm至3cm之间的周期的激子漏斗的莫尔超晶格。光电子器件还可以包括与半导体原子薄层电连通以便注入或提取电荷载流子的电荷载体导体。

8. 发明申请

WO2014203080A4 NANOSTRUCTURED UNITS FORMED INSIDE A SILICON MATERIAL AND THE MANUFACTURING PROCESS TO PERFORM THEM THEREIN 审中-公开
标题翻译：在硅材料中形成的纳米结构单元及其制造工艺
公开(公告)号：WO2014203080A4
公开(公告)日：2015-06-25
申请号：PCT/IB2014001973
申请日：2014-05-13
申请人： SEGTON ADVANCED TECHNOLOGY SAS
发明人： KUZNICKI ZBIGNIEW , MEYRUEIS PATRICK
IPC分类号： H01L31/068 , H01L31/0288 , H01L31/0352 , H01L31/036 , H01L31/18 , H01L31/20
CPC分类号： H01L31/065 , H01L31/0288 , H01L31/0352 , H01L31/035236 , H01L31/036 , H01L31/03682 , H01L31/03762 , H01L31/068 , H01L31/1804 , H01L31/1864 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： The invention bears on elementary nanoscale units nanostructured-formed inside a silicon material and the manufacturing process to implement them. Each elementary nanoscale unit is created by means of a limited displacement of two Si atoms outside a crystal elementary unit. A localized nanoscale transformation of the crystalline matter gets an unusual functionality by focusing in it a specific physical effect as is a highly useful additional set of electron energy levels that is optimized for the solar spectrum conversion to electricity. An adjusted energy set allows a low-energy secondary electron generation in a semiconductor, preferentially silicon, material for use especially in very- high efficiency all-silicon light-to-electricity converters. The manufacturing process to create such transformations in a semiconductor material bases on a local energy deposition like ion implantation or electron (γ, X) beam irradiation and suitable thermal treatment and is industrially easily available.
摘要翻译：本发明涉及在硅材料内纳米结构形成的基本纳米级单元和实现它们的制造过程。通过在晶体基本单元之外的两个Si原子的有限位移产生每个基本纳米尺度单元。结晶物质的局部纳米尺度变换通过将其特定的物理效应聚焦在特定的物理效应上而获得不寻常的功能，这是为太阳能光谱转换为电而优化的高度有用的另外一组电子能级。经调整的能量组允许半导体中的低能量二次电子产生，优选硅材料，特别是在非常高效率的全硅光电转换器中使用。在诸如离子注入或电子（γ，X）束照射和适当的热处理的局部能量沉积基础上在半导体材料中产生这种变换的制造工艺，并且在工业上容易获得。

9. 发明申请

WO2014203080A3 NANOSTRUCTURED UNITS FORMED INSIDE A SILICON MATERIAL AND THE MANUFACTURING PROCESS TO PERFORM THEM THEREIN 审中-公开
标题翻译：在硅材料内部形成的纳米结构单元及其制造过程以在其中执行
公开(公告)号：WO2014203080A3
公开(公告)日：2015-04-16
申请号：PCT/IB2014001973
申请日：2014-05-13
申请人： SEGTON ADVANCED TECHNOLOGY SAS
发明人： KUZNICKI ZBIGNIEW , MEYRUEIS PATRICK
IPC分类号： H01L31/068 , H01L31/0288 , H01L31/0352 , H01L31/036 , H01L31/18
CPC分类号： H01L31/065 , H01L31/0288 , H01L31/0352 , H01L31/035236 , H01L31/036 , H01L31/03682 , H01L31/03762 , H01L31/068 , H01L31/1804 , H01L31/1864 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： The invention bears on elementary nanoscale units nanostructured-formed inside a silicon material and the manufacturing process to implement them. Each elementary nanoscale unit is created by means of a limited displacement of two Si atoms outside a crystal elementary unit. A localized nanoscale transformation of the crystalline matter gets an unusual functionality by focusing in it a specific physical effect as is a highly useful additional set of electron energy levels that is optimized for the solar spectrum conversion to electricity. An adjusted energy set allows a low-energy secondary electron generation in a semiconductor, preferentially silicon, material for use especially in very- high efficiency all-silicon light-to-electricity converters. The manufacturing process to create such transformations in a semiconductor material bases on a local energy deposition like ion implantation or electron (γ, X) beam irradiation and suitable thermal treatment and is industrially easily available.
摘要翻译：本发明涉及在硅材料内纳米结构化形成的基本纳米级单元以及实施它们的制造工艺。每个基本的纳米级单元都是通过在晶体基本单元之外的两个Si原子的有限位移来创建的。通过聚焦于特定的物理效应，晶体物质的局部纳米级转换获得了不同寻常的功能，这是为太阳光谱转换为电而优化的非常有用的另外一组电子能级。调整后的能量集允许在半导体（优选硅）材料中产生低能量的二次电子，特别是用于非常高效率的全硅光电转换器中。在半导体材料中产生这种转变的制造过程基于局部能量沉积，如离子注入或电子（γ，X）束照射和适当的热处理，并且在工业上容易获得。

10. 发明申请

WO2014088211A1 나노 결정, 그 제조방법, 및 이를 포함하는 소자 审中-公开
标题翻译：纳米晶体，其制造方法和包括其的器件
公开(公告)号：WO2014088211A1
公开(公告)日：2014-06-12
申请号：PCT/KR2013/009753
申请日：2013-10-31
申请人： 서울대학교 산학협력단
发明人： 차국헌 , 이성훈 , 임재훈 , 배완기
IPC分类号： B82B1/00 , B82B3/00 , H01L31/042
CPC分类号： H01L31/036 , B82Y30/00 , C30B7/14 , C30B29/46 , C30B29/60
摘要： 코어 용액에 제2첨가제가 함유된 전구체 용액을 고정 속도 또는 가변 속도로 연속적으로 주입하는 단계를 포함하여 형상 선택성(shape selectivity) 및 균일성이 향상된 나노 결정, 그 제조방법 및 이를 포함하는 소자가 제공된다.
摘要翻译：提供一种纳米晶体及其制造方法及其制造方法，其特征在于，纳米晶体具有改善的形状选择性和均匀性，其特征在于，通过以固定的方式进行在芯溶液中连续注入含有第二添加剂的前体溶液的工序速率或可变速率。

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