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1. 发明申请

WO2011001293A3 METHOD OF FORMING AN ELECTROMECHANICAL TRANSDUCER DEVICE 审中-公开
公开(公告)号：WO2011001293A3
公开(公告)日：2011-01-06
申请号：PCT/IB2010/001950
申请日：2010-06-15
申请人： FREESCALE SEMICONDUCTOR, INC. , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , PERRUCHOT, François , LIU, Lianjun , PACHECO, Sergio , DEFAY, Emmanuel , REY, Patrice
发明人： PERRUCHOT, François , LIU, Lianjun , PACHECO, Sergio , DEFAY, Emmanuel , REY, Patrice
IPC分类号： B81C1/00
摘要： A method of forming an electromechanical transducer device (200) comprises forming (500) on a fixed structure (210) a movable structure (203) and an actuating structure of the electromechanical transducer device, wherein the movable structure (203) is arranged in operation of the electromechanical transducer device (200) to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing (504) a stress trimming layer (216) on at least part of the movable structure (203), after providing the stress trimming layer (216), releasing (506) the movable structure (203) from the fixed structure (210) to provide a released electromechanical transducer device (200), and after releasing the movable structure (203), changing (508) stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure (203) is deflected a predetermined amount relative to the fixed structure (210) when the electromechanical transducer device (200) is in an off state.

2. 发明申请

WO2010061364A2 ELECTROMECHANICAL TRANSDUCER DEVICE AND METHOD OF FORMING A ELECTROMECHANICAL TRANSDUCER DEVICE 审中-公开
标题翻译：机电传感器装置及形成机电传感器装置的方法
公开(公告)号：WO2010061364A2
公开(公告)日：2010-06-03
申请号：PCT/IB2009/056020
申请日：2009-11-25
申请人： FREESCALE SEMICONDUCTOR, INC. , COMMISSARIAT à L'ENERGIE ATOMIQUE (CEA) , PERRUCHOT, François , DEFAY, Emmanuel , REY, Patrice , LIU, Lianjun , PACHECO, Sergio
发明人： PERRUCHOT, François , DEFAY, Emmanuel , REY, Patrice , LIU, Lianjun , PACHECO, Sergio
IPC分类号： B81B3/00 , H01L41/09
CPC分类号： B81B3/0072 , B81B2201/032 , H01L41/0933 , H01L41/094
摘要： A micro or nano electromechanical transducer device (200) formed on a semiconductor substrate (210) comprises a movable structure (203) which is arranged to be movable in response to actuation of an actuating structure. The movable structure (203) comprises a mechanical structure (204) comprising at least one mechanical layer (204) having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer (202) of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer (206) having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer (207) having a fourth thermal response characteristic and a fourth mechanical stress response characteristic. The first (206) and second (207) compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer (202) of the actuating structure such that movement of the movable structure (203) is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer (202) of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device (200) is in an inactive state.
摘要翻译：形成在半导体衬底（210）上的微型或纳米机电换能器装置（200）包括可移动结构（203），其被布置成响应于致动结构的致动而是可移动的。可移动结构（203）包括机械结构（204），其包括具有第一热响应特性和第一机械应力响应特性的至少一个机械层（204），所述致动结构的至少一个层（202）具有与第一热响应特性不同的第二热响应特性和与第一机械应力响应特性不同的第二机械应力响应特性的至少一个层，具有第三热响应特性和第三机械应力的第一补偿层（206）以及具有第四热响应特性和第四机械应力响应特性的第二补偿层（207）。第一（206）和第二（207）补偿层布置成补偿由机械结构和致动结构的至少一个层（202）的不同的第一和第二热响应特性产生的热效应，可移动结构（203）基本上独立于温度变化并且调节由机械结构和致动结构的至少一个层（202）的不同的第一和第二应力响应特性产生的应力效应，使得可移动的结构当机电换能器装置（200）处于非活动状态时，结构相对于基板偏转预定量。

3. 发明申请

WO2010061363A3 ELECTROMECHANICAL TRANSDUCER DEVICE HAVING THERMAL COMPENSATION AND METHOD OF MANUFACTURE 审中-公开
公开(公告)号：WO2010061363A3
公开(公告)日：2010-06-03
申请号：PCT/IB2009/056019
申请日：2009-11-25
申请人： FREESCALE SEMICONDUCTOR, INC. , COMMISSARIAT à L'ENERGIE ATOMIQUE (CEA) , LIU, Lianjun , PACHECO, Sergio , PERRUCHOT, François , DEFAY, Emmanuel , REY, Patrice
发明人： LIU, Lianjun , PACHECO, Sergio , PERRUCHOT, François , DEFAY, Emmanuel , REY, Patrice
IPC分类号： B81B3/00 , H01L41/09
摘要： A micro or nano electromechanical transducer device (200) formed on a semiconductor substrate comprises a movable structure (203) which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure having at least one mechanical layer (204) having a first thermal response characteristic, at least one layer (202) of the actuating structure having a second thermal response characteristic different to the first thermal response characteristic, and a thermal compensation structure having at least one thermal compensation layer (206). The thermal compensation layer is different to the at least one layer (202) and is arranged to compensate a thermal effect produced by the mechanical layer and the at least one layer of the actuating structure such that the movement of the movable structure is substantially independent of variations in temperature.

4. 发明申请

WO2008140903A1 INTEGRATED CIRCUIT HAVING RE-CONFIGURABLE BALUN CIRCUIT AND METHOD THEREFOR 审中-公开
标题翻译：具有可重新配置的BALUN电路的集成电路及其方法
公开(公告)号：WO2008140903A1
公开(公告)日：2008-11-20
申请号：PCT/US2008/061126
申请日：2008-04-22
申请人： FREESCALE SEMICONDUCTOR INC. , LIU, Lianjun
发明人： LIU, Lianjun
IPC分类号： H03H11/32
CPC分类号： H03H7/42 , H03H7/0153 , H03H7/1775
摘要： A balun circuit (10) comprises a balun transformer (12) having first and second windings (13, 15), and first and second variable capacitors (18, 20). The first variable capacitor (18) has a first plate electrode coupled to the first terminal of the first winding (13), and a second plate electrode coupled to the second terminal of the first winding (13). The second variable capacitor (20) has a first plate electrode coupled to the first terminal of the second winding (15), and a second plate electrode coupled to the second terminal of the second winding (15). The first variable capacitor (18) is tunable between first and second capacitance values. The second variable capacitor (20) is tunable between third and fourth capacitance values. Tuning the variable capacitors (18, 20) allows the balun circuit (10) to be re-configurable to operate in both the first frequency band and the second frequency band.
摘要翻译：平衡 - 不平衡变换器电路（10）包括具有第一和第二绕组（13,15）以及第一和第二可变电容器（18,20）的平衡 - 不平衡变压器（12）。第一可变电容器（18）具有耦合到第一绕组（13）的第一端子的第一板电极和耦合到第一绕组（13）的第二端子的第二板电极。第二可变电容器（20）具有耦合到第二绕组（15）的第一端子的第一板电极和耦合到第二绕组（15）的第二端子的第二板电极。第一可变电容器（18）可在第一和第二电容值之间调节。第二可变电容器（20）可在第三和第四电容值之间调节。调谐可变电容器（18,20）允许平衡 - 不平衡转换电路（10）可重新配置为在第一频带和第二频带两者中工作。

5. 发明申请

WO2009108411A1 MICROELECTROMECHANICAL SYSTEMS COMPONENT AND METHOD OF MAKING SAME 审中-公开
标题翻译：微电子系统组件及其制造方法
公开(公告)号：WO2009108411A1
公开(公告)日：2009-09-03
申请号：PCT/US2009/031207
申请日：2009-01-16
申请人： FREESCALE SEMICONDUCTOR INC. , MILLER, Melvy F. , KOURY, Daniel N., Jr. , LIU, Lianjun
发明人： MILLER, Melvy F. , KOURY, Daniel N., Jr. , LIU, Lianjun
IPC分类号： B81B7/00 , H01L23/12
CPC分类号： B81C1/00182 , B81B2201/0257 , B81C2201/019 , H04R19/005 , H04R19/04 , H04R31/00
摘要： A microelectromechanical systems (MEMS) component (20) includes a portion (32) of a MEMS structure (30) formed on a semiconductor substrate (34) and a portion (36) of the structure (30) formed in a non-semiconductor substrate (22). The non-semiconductor substrate (22) is in fixed communication with the semiconductor substrate (34) with the portion (32) of the MEMS structure (30) being interposed between the substrates (34) and (22). A fabrication method (96) entails utilizing semiconductor thin-film processing techniques to form the portion (32) on the semiconductor substrate (34), and utilizing a lower cost processing technique to fabricate the portion (36) in the non-semiconductor substrate (22). The portions (32) and (36) are coupled to yield the MEMS structure (30), and the MEMS structure (30) can be attached to another substrate as needed for additional functionality.
摘要翻译：微机电系统（MEMS）部件（20）包括形成在半导体衬底（34）上的MEMS结构（30）的部分（32）和形成在非半导体衬底中的结构（30）的部分（36）（22）。非半导体衬底（22）与半导体衬底（34）固定连通，其中MEMS结构（30）的部分（32）介于衬底（34）和（22）之间。制造方法（96）需要利用半导体薄膜处理技术在半导体衬底（34）上形成部分（32），并且利用较低成本的处理技术来制造非半导体衬底（36）中的部分（36） 22）。部分（32）和（36）被耦合以产生MEMS结构（30），并且可以根据附加功能的需要将MEMS结构（30）附接到另一基板。

6. 发明申请

WO2009099692A1 BALUN TRANSFORMER WITH IMPROVED HARMONIC SUPRESSION 审中-公开
标题翻译： BALUN变压器具有改进的谐波抑制
公开(公告)号：WO2009099692A1
公开(公告)日：2009-08-13
申请号：PCT/US2009/030247
申请日：2009-01-07
申请人： FREESCALE SEMICONDUCTOR INC. , LI, Qiang , ABROKWAH, Jonathan K. , HARTIN, Olin L. , LIU, Lianjun
发明人： LI, Qiang , ABROKWAH, Jonathan K. , HARTIN, Olin L. , LIU, Lianjun
IPC分类号： H01P5/10 , H03H7/42
CPC分类号： H01F19/04 , H03H7/1775 , H03H7/42 , H03H2001/0064 , Y10T29/4902
摘要： An electronic assembly includes a substrate (66), a balun transformer (42) formed on the substrate (66) and including a first winding (50) and a second winding (52), each having respective first and second ends, and a reaction circuit component (48) formed on the substrate (66) and electrically coupled to the second winding (52) between the first and second ends thereof. The balun transformer (42) and the reaction circuit component (48) jointly form a harmonically suppressed balun transformer having a fundamental frequency, and the reaction circuit component (48) is tuned such that the harmonically suppressed balun transformer resonates at a selected harmonic of the fundamental frequency.
摘要翻译：电子组件包括衬底（66），形成在衬底（66）上并包括第一绕组（50）和第二绕组（52）的平衡 - 不平衡变压器（42），每个具有相应的第一和第二端，以及反应电路部件（48），形成在所述基板（66）上并且在所述第一和第二端之间电连接到所述第二绕组（52）。平衡 - 不平衡变压器（42）和反应电路部件（48）共同形成具有基频的谐波抑制平衡不平衡变压器，并且调谐反应电路部件（48），使得谐波抑制的平衡不平衡变压器以所选择的谐波谐振基频

7. 发明申请

WO2011112301A2 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2011112301A2
公开(公告)日：2011-09-15
申请号：PCT/US2011/023993
申请日：2011-02-08
申请人： FREESCALE SEMICONDUCTOR, INC. , KARLIN, Lisa H. , LIU, Lianjun , PAMATAT, Alex P. , WINEBARGER, Paul, M.
发明人： KARLIN, Lisa H. , LIU, Lianjun , PAMATAT, Alex P. , WINEBARGER, Paul, M.
IPC分类号： H01L21/50
CPC分类号： B81B3/0018 , B81B7/007 , H01L21/50 , H01L21/78 , H01L23/04 , H01L24/94 , H01L24/97 , H01L2224/94 , H01L2224/97 , H01L2924/1461 , H01L24/03 , H01L24/26 , H01L24/83 , H01L2224/83 , H01L2224/03 , H01L2224/27
摘要： A wafer structure (88) includes a device wafer (20) and a cap wafer (60). Semiconductor dies (22) on the device wafer (20) each include a microelectronic device (26) and terminal elements (28, 30). Barriers (36, 52) are positioned in inactive regions (32, 50) of the device wafer (20). The cap wafer (60) is coupled to the device wafer (20) and covers the semiconductor dies (22). Portions (72) of the cap wafer (60) are removed to expose the terminal elements (28, 30). The barriers (36, 52) may be taller than the elements (28, 30) and function to prevent the portions (72) from contacting the terminal elements (28, 30) when the portions (72) are removed. The wafer structure (88) is singulated to form multiple semiconductor devices (89), each device (89) including the microelectronic device (26) covered by a section of the cap wafer (60) and terminal elements (28, 30) exposed from the cap wafer (60).
摘要翻译：晶片结构（88）包括器件晶片（20）和盖晶片（60）。器件晶片（20）上的半导体管芯（22）各自包括微电子器件（26）和端子元件（28,30）。阻挡层（36,52）位于器件晶片（20）的非活性区域（32,50）中。盖晶片（60）耦合到器件晶片（20）并覆盖半导体管芯（22）。去除盖晶片（60）的部分（72）以露出端子元件（28,30）。障碍物（36,52）可以比元件（28,30）更高，并且用于在部分（72）被移除时防止部分（72）接触端子元件（28,30）。晶片结构（88）被单个化以形成多个半导体器件（89），每个器件（89）包括由盖晶片（60）的一部分覆盖的微电子器件（26）和从其暴露的端子元件（28,30）盖晶片（60）。

8. 发明申请

WO2011081741A3 ELECTRICAL COUPLING OF WAFER STRUCTURES 审中-公开
公开(公告)号：WO2011081741A3
公开(公告)日：2011-07-07
申请号：PCT/US2010/057624
申请日：2010-11-22
申请人： FREESCALE SEMICONDUCTOR, INC. , LIU, Lianjun , KARLIN, Lisa H. , MAGNUS, Alan J.
发明人： LIU, Lianjun , KARLIN, Lisa H. , MAGNUS, Alan J.
IPC分类号： H01L21/50
摘要： A method for electrically coupling a first wafer (105) with a second wafer (103) is provided. The method includes bonding the first wafer with the second wafer using a bonding material (121). The method further includes forming an opening (201 or 203) in the first wafer in a scribe area (141 or 143) of the second wafer to expose a surface of a conductive structure (108 or 112) of the second wafer. The method further includes forming a conductive layer (301) overlying the first wafer and the opening in the first wafer such that the conductive layer forms an electrical contact with the conductive structure (108 or 112) of the second wafer thereby electrically coupling the first wafer with the second wafer.

9. 发明申请

WO2010014289A1 BALUN SIGNAL TRANSFORMER AND METHOD OF FORMING 审中-公开
标题翻译：巴伦信号变换器及其形成方法
公开(公告)号：WO2010014289A1
公开(公告)日：2010-02-04
申请号：PCT/US2009/043909
申请日：2009-05-14
申请人： FREESCALE SEMICONDUCTOR INC. , LIU, Lianjun , ABROKWAH, Jonathan, K. , HARTIN, Olin, L. , LI, Qiang
发明人： LIU, Lianjun , ABROKWAH, Jonathan, K. , HARTIN, Olin, L. , LI, Qiang
IPC分类号： H03H7/42
CPC分类号： H03H7/42 , H01F19/08 , H01F2017/0046 , H03H7/1758 , H03H7/1766 , H03H7/1775
摘要： A balanced-unbalanced (balun) signal transformer (48) includes an unbalanced port (30), a balanced port (50) coupled to the unbalanced port, the balanced port comprising a first terminal (52) and a second terminal (54), a first capacitor (90) coupled to the first terminal, a first inductor (92) coupled to ground and the first capacitor, a second capacitor (94) coupled to the second terminal, and a second inductor (96) coupled to ground and the second capacitor. The transformer may also include a third capacitor (84) coupled to a terminal of the unbalanced port; and a third inductor (82) coupled to the third capacitor and the third terminal.
摘要翻译：平衡不平衡（balun）信号变压器（48）包括不平衡端口（30），耦合到不平衡端口的平衡端口（50），平衡端口包括第一端子（52）和第二端子（54）耦合到第一端子的第一电容器（90），耦合到地的第一电感器（92）和第一电容器;耦合到第二端子的第二电容器（94）和耦合到地的第二电感器（96）和第二电容器。变压器还可以包括耦合到不平衡端口的端子的第三电容器（84）以及耦合到所述第三电容器和所述第三端子的第三电感器（82）。

10. 发明申请

WO2011071685A2 MICRO ELECTROMECHANICAL SYSTEMS (MEMS) HAVING A GAP STOP AND METHOD THEREFOR 审中-公开
标题翻译：具有间隙停止的微机电系统（MEMS）及其方法
公开(公告)号：WO2011071685A2
公开(公告)日：2011-06-16
申请号：PCT/US2010/057618
申请日：2010-11-22
申请人： FREESCALE SEMICONDUCTOR, INC. , PARK, Woo Tae , KARLIN, Lisa H. , LIU, Lianjun
发明人： PARK, Woo Tae , KARLIN, Lisa H. , LIU, Lianjun
IPC分类号： B81C1/00 , B81B7/02
CPC分类号： H01L23/10 , B81B2203/0118 , B81C3/001 , B81C2203/0118 , B81C2203/035 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a micro-electromechanical system (MEMS) (10) includes providing a cap substrate (52), providing a support substrate (12), depositing a conductive material (22) over the support substrate, patterning the conductive material to form a gap stop (40, 44) and a contact, wherein the gap stop is separated form the contact by an opening (36, 38), forming a bonding material (58) over the contact and in the opening, wherein the gap stop and the contact prevent the bonding material from extending outside the opening, and attaching the cap substrate to the support substrate by the step of forming the bonding material. In addition, the structure is described.
摘要翻译：一种形成微机电系统（MEMS）（10）的方法包括提供盖基板（52），提供支撑基板（12），在所述支撑件上沉积导电材料（22）衬底，图案化导电材料以形成间隙止动件（40,44）和触点，其中间隙止动件通过开口（36,38）与触点分开，在触点上形成接合材料（58）其中所述间隙停止部和所述接触部防止所述接合材料延伸到所述开口的外部，并且通过形成所述接合材料的步骤将所述盖基板附接到所述支撑基板。另外，结构描述。

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