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1. 发明申请

WO2011112301A2 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2011112301A2
公开(公告)日：2011-09-15
申请号：PCT/US2011/023993
申请日：2011-02-08
申请人： FREESCALE SEMICONDUCTOR, INC. , KARLIN, Lisa H. , LIU, Lianjun , PAMATAT, Alex P. , WINEBARGER, Paul, M.
发明人： KARLIN, Lisa H. , LIU, Lianjun , PAMATAT, Alex P. , WINEBARGER, Paul, M.
IPC分类号： H01L21/50
CPC分类号： B81B3/0018 , B81B7/007 , H01L21/50 , H01L21/78 , H01L23/04 , H01L24/94 , H01L24/97 , H01L2224/94 , H01L2224/97 , H01L2924/1461 , H01L24/03 , H01L24/26 , H01L24/83 , H01L2224/83 , H01L2224/03 , H01L2224/27
摘要： A wafer structure (88) includes a device wafer (20) and a cap wafer (60). Semiconductor dies (22) on the device wafer (20) each include a microelectronic device (26) and terminal elements (28, 30). Barriers (36, 52) are positioned in inactive regions (32, 50) of the device wafer (20). The cap wafer (60) is coupled to the device wafer (20) and covers the semiconductor dies (22). Portions (72) of the cap wafer (60) are removed to expose the terminal elements (28, 30). The barriers (36, 52) may be taller than the elements (28, 30) and function to prevent the portions (72) from contacting the terminal elements (28, 30) when the portions (72) are removed. The wafer structure (88) is singulated to form multiple semiconductor devices (89), each device (89) including the microelectronic device (26) covered by a section of the cap wafer (60) and terminal elements (28, 30) exposed from the cap wafer (60).
摘要翻译：晶片结构（88）包括器件晶片（20）和盖晶片（60）。器件晶片（20）上的半导体管芯（22）各自包括微电子器件（26）和端子元件（28,30）。阻挡层（36,52）位于器件晶片（20）的非活性区域（32,50）中。盖晶片（60）耦合到器件晶片（20）并覆盖半导体管芯（22）。去除盖晶片（60）的部分（72）以露出端子元件（28,30）。障碍物（36,52）可以比元件（28,30）更高，并且用于在部分（72）被移除时防止部分（72）接触端子元件（28,30）。晶片结构（88）被单个化以形成多个半导体器件（89），每个器件（89）包括由盖晶片（60）的一部分覆盖的微电子器件（26）和从其暴露的端子元件（28,30）盖晶片（60）。

2. 发明申请

WO2011071685A2 MICRO ELECTROMECHANICAL SYSTEMS (MEMS) HAVING A GAP STOP AND METHOD THEREFOR 审中-公开
标题翻译：具有间隙停止的微机电系统（MEMS）及其方法
公开(公告)号：WO2011071685A2
公开(公告)日：2011-06-16
申请号：PCT/US2010/057618
申请日：2010-11-22
申请人： FREESCALE SEMICONDUCTOR, INC. , PARK, Woo Tae , KARLIN, Lisa H. , LIU, Lianjun
发明人： PARK, Woo Tae , KARLIN, Lisa H. , LIU, Lianjun
IPC分类号： B81C1/00 , B81B7/02
CPC分类号： H01L23/10 , B81B2203/0118 , B81C3/001 , B81C2203/0118 , B81C2203/035 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a micro-electromechanical system (MEMS) (10) includes providing a cap substrate (52), providing a support substrate (12), depositing a conductive material (22) over the support substrate, patterning the conductive material to form a gap stop (40, 44) and a contact, wherein the gap stop is separated form the contact by an opening (36, 38), forming a bonding material (58) over the contact and in the opening, wherein the gap stop and the contact prevent the bonding material from extending outside the opening, and attaching the cap substrate to the support substrate by the step of forming the bonding material. In addition, the structure is described.
摘要翻译：一种形成微机电系统（MEMS）（10）的方法包括提供盖基板（52），提供支撑基板（12），在所述支撑件上沉积导电材料（22）衬底，图案化导电材料以形成间隙止动件（40,44）和触点，其中间隙止动件通过开口（36,38）与触点分开，在触点上形成接合材料（58）其中所述间隙停止部和所述接触部防止所述接合材料延伸到所述开口的外部，并且通过形成所述接合材料的步骤将所述盖基板附接到所述支撑基板。另外，结构描述。

3. 发明申请

WO2011081741A3 ELECTRICAL COUPLING OF WAFER STRUCTURES 审中-公开
公开(公告)号：WO2011081741A3
公开(公告)日：2011-07-07
申请号：PCT/US2010/057624
申请日：2010-11-22
申请人： FREESCALE SEMICONDUCTOR, INC. , LIU, Lianjun , KARLIN, Lisa H. , MAGNUS, Alan J.
发明人： LIU, Lianjun , KARLIN, Lisa H. , MAGNUS, Alan J.
IPC分类号： H01L21/50
摘要： A method for electrically coupling a first wafer (105) with a second wafer (103) is provided. The method includes bonding the first wafer with the second wafer using a bonding material (121). The method further includes forming an opening (201 or 203) in the first wafer in a scribe area (141 or 143) of the second wafer to expose a surface of a conductive structure (108 or 112) of the second wafer. The method further includes forming a conductive layer (301) overlying the first wafer and the opening in the first wafer such that the conductive layer forms an electrical contact with the conductive structure (108 or 112) of the second wafer thereby electrically coupling the first wafer with the second wafer.

4. 发明申请

WO2010080229A1 MICROELECTROMECHANICAL DEVICE WITH ISOLATED MICROSTRUCTURES AND METHOD OF PRODUCING SAME 审中-公开
标题翻译：具有隔离微结构的微电子器件及其制造方法
公开(公告)号：WO2010080229A1
公开(公告)日：2010-07-15
申请号：PCT/US2009/065905
申请日：2009-11-25
申请人： FREESCALE SEMICONDUCTOR INC. , ZHANG, Lisa Z. , KARLIN, Lisa H. , MONTEZ, Ruben B. , PARK, Woo Tae
发明人： ZHANG, Lisa Z. , KARLIN, Lisa H. , MONTEZ, Ruben B. , PARK, Woo Tae
IPC分类号： H01L21/76 , B81B7/00
CPC分类号： B81C1/00698
摘要： A microelectromechanical systems (MEMS) device (20) includes a polysilicon structural layer (46) having movable microstructures (28) formed therein and suspended above a substrate (22). Isolation trenches (56) extend through the layer (46) such that the microstructures (28) are laterally anchored to the isolation trenches (56). A sacrificial layer (22) is formed overlying the substrate (22), and the structural layer (46) is formed overlying the sacrificial layer (22). The isolation trenches (56) are formed by etching through the polysilicon structural layer (46) and depositing a nitride (72), such as silicon-rich nitride, in the trenches (56). The microstructures (28) are then formed in the structural layer (46), and electrical connections (30) are formed over the isolation trenches (56). The sacrificial layer (22) is subsequently removed to form the MEMS device (20) having the isolated microstructures (28) spaced apart from the substrate (22).
摘要翻译：微机电系统（MEMS）装置（20）包括多晶硅结构层（46），该多晶硅结构层（46）具有形成在其中的悬浮在衬底（22）上方的可移动微结构（28）。绝缘沟槽（56）延伸穿过层（46），使得微结构（28）横向锚定到隔离沟槽（56）。形成覆盖衬底（22）的牺牲层（22），并且覆盖牺牲层（22）上形成结构层（46）。隔离沟槽（56）通过蚀刻穿过多晶硅结构层（46）并在沟槽（56）中沉积诸如富含硅的氮化物的氮化物（72）形成。然后在结构层（46）中形成微结构（28），并且在隔离沟槽（56）上形成电连接（30）。随后去除牺牲层（22）以形成具有与衬底（22）间隔开的隔离微结构（28）的MEMS器件（20）。

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