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1. 发明申请

WO2009108411A1 MICROELECTROMECHANICAL SYSTEMS COMPONENT AND METHOD OF MAKING SAME 审中-公开
标题翻译：微电子系统组件及其制造方法
公开(公告)号：WO2009108411A1
公开(公告)日：2009-09-03
申请号：PCT/US2009/031207
申请日：2009-01-16
申请人： FREESCALE SEMICONDUCTOR INC. , MILLER, Melvy F. , KOURY, Daniel N., Jr. , LIU, Lianjun
发明人： MILLER, Melvy F. , KOURY, Daniel N., Jr. , LIU, Lianjun
IPC分类号： B81B7/00 , H01L23/12
CPC分类号： B81C1/00182 , B81B2201/0257 , B81C2201/019 , H04R19/005 , H04R19/04 , H04R31/00
摘要： A microelectromechanical systems (MEMS) component (20) includes a portion (32) of a MEMS structure (30) formed on a semiconductor substrate (34) and a portion (36) of the structure (30) formed in a non-semiconductor substrate (22). The non-semiconductor substrate (22) is in fixed communication with the semiconductor substrate (34) with the portion (32) of the MEMS structure (30) being interposed between the substrates (34) and (22). A fabrication method (96) entails utilizing semiconductor thin-film processing techniques to form the portion (32) on the semiconductor substrate (34), and utilizing a lower cost processing technique to fabricate the portion (36) in the non-semiconductor substrate (22). The portions (32) and (36) are coupled to yield the MEMS structure (30), and the MEMS structure (30) can be attached to another substrate as needed for additional functionality.
摘要翻译：微机电系统（MEMS）部件（20）包括形成在半导体衬底（34）上的MEMS结构（30）的部分（32）和形成在非半导体衬底中的结构（30）的部分（36）（22）。非半导体衬底（22）与半导体衬底（34）固定连通，其中MEMS结构（30）的部分（32）介于衬底（34）和（22）之间。制造方法（96）需要利用半导体薄膜处理技术在半导体衬底（34）上形成部分（32），并且利用较低成本的处理技术来制造非半导体衬底（36）中的部分（36） 22）。部分（32）和（36）被耦合以产生MEMS结构（30），并且可以根据附加功能的需要将MEMS结构（30）附接到另一基板。

2. 发明申请

WO2008014029A2 RE-CONFIGURABLE IMPEDANCE MATCHING AND HARMONIC FILTER SYSTEM 审中-公开
标题翻译：可配置阻抗匹配和谐波滤波系统
公开(公告)号：WO2008014029A2
公开(公告)日：2008-01-31
申请号：PCT/US2007/067257
申请日：2007-04-24
申请人： FREESCALE SEMICONDUCTOR INC. , LIU, Lianjun , MILLER, Melvy F.
发明人： LIU, Lianjun , MILLER, Melvy F.
IPC分类号： H04B1/04 , H01Q11/12
CPC分类号： H04B1/0458 , H04B1/0067
摘要： Methods and apparatus are provided to enable a transceiver (200) or transmitter including a single PA line-up (210) to transmit signals having frequencies in two or more different frequency bands, and/or having two or more different modulation types, and/or having two or more different RF power levels. The single PA line-up includes at least one variable matching circuit (216) and a variable harmonic filter (240) to tune match and tune filter communication signals prior to transmission. The variable matching circuit and the variable harmonic filter each include at least one variable capacitive element (2160 and 2400) that switches ON/OFF depending on whether a low frequency signal or a high frequency signal is being transmitted. Each variable capacitive element includes separate direct current and radio frequency terminals to enable the single PA line-up to change signal modulation and/or RF power levels in addition to frequencies.
摘要翻译：提供了方法和装置，以使包括单个PA阵列（210）的收发机（200）或发射机能够发送具有两个或多个不同频带中的频率和/或具有两个或多个不同调制类型的频率，和/ 或具有两个或更多个不同的RF功率电平。单个PA阵列包括至少一个可变匹配电路（216）和可变谐波滤波器（240），以在传输之前调谐匹配和调谐滤波器通信信号。可变匹配电路和可变谐波滤波器各自包括至少一个可变电容元件（2160和2400），其根据是否正在发送低频信号或高频信号来接通/断开。每个可变电容元件包括单独的直流电和射频终端，以使得单个PA阵列除频率之外还能改变信号调制和/或RF功率电平。

3. 发明申请

WO2005091795A2 METHOD OF MAKING A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MADE THEREBY 审中-公开
标题翻译：制造半导体器件的方法及其制造的半导体器件
公开(公告)号：WO2005091795A2
公开(公告)日：2005-10-06
申请号：PCT/US2005/004008
申请日：2005-02-10
申请人： FREESCALE SEMICONDUCTOR, INC. , REMMEL, Thomas P. , KALPAT, Sriram , MILLER, Melvy F. , ZURCHER, Peter
发明人： REMMEL, Thomas P. , KALPAT, Sriram , MILLER, Melvy F. , ZURCHER, Peter
IPC分类号： H01L21/02 , H01L21/20 , H01L21/8242 , H01L27/06 , H01L27/108 , H01L29/00 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/0682 , H01L23/5223 , H01L23/5228 , H01L28/20 , H01L28/40 , H01L2924/0002 , H01L2924/00
摘要： A method of making a semiconductor device includes the steps of: providing a semiconductor substrate (110, 510, 1010, 1610) having a patterned interconnect layer (120, 520, 1020, 1620) formed thereon; depositing a first dielectric material (130, 530, 1030, 1630) over the interconnect layer; depositing a first electrode material (140, 540, 1040, 1640) over the first dielectric material; depositing a second dielectric material (150, 550, 1050, 1650) over the first electrode material; depositing a second electrode material (160, 560, 1060, 1660) over the second dielectric material; patterning the second electrode material to form a top electrode (211, 611, 1111, 1611) of a first capacitor (210, 710, 1310, 1615); and patterning the first electrode material to form a top electrode (221, 721, 1221, 1621) of a second capacitor (220, 720, 1320, 1625), to form an electrode (212, 712, 1212, 1612) of the first capacitor, and to define a resistor (230, 730, 1330).
摘要翻译：制造半导体器件的方法包括以下步骤：提供具有形成在其上的图案化互连层（120,520,1020,1620）的半导体衬底（110,510,1010,1610）在所述互连层上沉积第一介电材料（130,530,1030,1630）; 在所述第一电介质材料上沉积第一电极材料（140,540,1040,1640）; 在所述第一电极材料上沉积第二介电材料（150,550,1050,1650）; 在所述第二电介质材料上沉积第二电极材料（160,560,1060,1660）; 图案化第二电极材料以形成第一电容器（210,710,1310,1615）的顶部电极（211,611,1111,1611）; 以及图案化所述第一电极材料以形成第二电容器（220,720,1320,1625）的顶部电极（221,721,1221,1621），以形成所述第一电极的电极（212,712,1212,1612）电容器，并且限定电阻器（230,730,1330）。

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