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    • 2. 发明申请
    • A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL
    • 用于制造合成金刚石材料的微波等离子体反应器
    • WO2012084661A1
    • 2012-06-28
    • PCT/EP2011/072825
    • 2011-12-14
    • ELEMENT SIX LIMITEDCOE, Steven EdwardWILMAN, Jonathan JamesTWITCHEN, Daniel JamesSCARSBROOK, Geoffrey AlanBRANDON, John RobertWORT, Christopher John Howard
    • COE, Steven EdwardWILMAN, Jonathan JamesTWITCHEN, Daniel JamesSCARSBROOK, Geoffrey AlanBRANDON, John RobertWORT, Christopher John Howard
    • H01J37/32C30B29/04
    • C23C16/45563C23C16/274C23C16/45504C23C16/45565C23C16/511C30B25/105C30B29/04H01J37/32192H01J37/32238H01J37/3244H01J37/32449
    • A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the gas flow system comprises a gas inlet nozzle array comprising a plurality of gas inlet nozzles disposed opposite the substrate holder for directing process gases towards the substrate holder, the gas inlet nozzle array comprising: at least six gas inlet nozzles disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber; a gas inlet nozzle number density equal to or greater than 0.1 nozzles/cm 2 , wherein the gas inlet nozzle number density is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber and measuring the gas inlet number density on said plane;and a nozzle area ratio of equal to or greater than 10, whereinthe nozzle area ratio is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber, measuring the total area of the gas inlet nozzle area on said plane, dividing by the total number of nozzles to give an area associated with each nozzle, and dividing the area associated with each nozzle by an actual area of each nozzle.
    • 一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器,所述微波等离子体反应器包括:等离子体室; 设置在等离子体室中的衬底保持器,用于支撑在使用中沉积合成金刚石材料的衬底; 用于将微波从微波发生器馈入等离子体室的微波耦合配置; 以及用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 其中所述气体流动系统包括气体入口喷嘴阵列,所述气体入口喷嘴阵列包括与所述衬底保持器相对设置的多个气体入口喷嘴,用于将工艺气体引向所述衬底保持器,所述气体入口喷嘴阵列包括:至少六个气体入口喷嘴, 或相对于等离子体室的中心轴线的发散取向; 气体入口喷嘴数密度等于或大于0.1喷嘴/ cm2,其中气体入口喷嘴数密度通过将喷嘴投影到平行于等离子体室的中心轴线的平面上并测量气体入口数 所述平面上的密度;以及等于或大于10的喷嘴面积比,其中喷嘴面积比通过将喷嘴投射到平行于等离子体室的中心轴线的平面上测量,测量总面积 在所述平面上的气体入口喷嘴面积除以总喷嘴数量以给出与每个喷嘴相关联的区域,并且将与每个喷嘴相关联的区域除以每个喷嘴的实际面积。
    • 3. 发明申请
    • CONTROLLING DOPING OF SYNTHETIC DIAMOND MATERIAL
    • 控制合成金刚石材料的掺杂
    • WO2012084656A1
    • 2012-06-28
    • PCT/EP2011/072820
    • 2011-12-14
    • ELEMENT SIX LIMITEDCOE, Steven EdwardWILMAN, Jonathan JamesTWITCHEN, Daniel JamesSCARSBROOK, Geoffrey AlanBRANDON, John RobertWORT, Christopher John HowardMARKHAM, Matthew Lee
    • COE, Steven EdwardWILMAN, Jonathan JamesTWITCHEN, Daniel JamesSCARSBROOK, Geoffrey AlanBRANDON, John RobertWORT, Christopher John HowardMARKHAM, Matthew Lee
    • H01J37/32C30B29/04
    • C30B25/14C01B32/25C23C16/274C23C16/278C30B25/02C30B25/165C30B29/04H01J37/32192H01J37/32449
    • A method of manufacturing synthetic CVD diamond material, the method comprising: providing a microwave plasma reactor comprising: a plasma chamber; one or more substrates disposed in the plasma chamber providing a growth surface area over which the synthetic CVD diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, injecting process gases into the plasma chamber; feeding microwaves from the microwave generator into the plasma chamber through the microwave coupling configuration to form a plasma above the growth surface area; and growing synthetic CVD diamond material over the growth surface area, wherein the process gases comprise at least one dopant in gaseous form, selected from a one or more of boron, silicon, sulphur, phosphorous, lithium and beryllium at a concentration equal to or greater than 0.01 ppm and/or nitrogen at a concentration equal to or greater than 0.3 ppm, wherein the gas flow system includes a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area, and wherein the process gases are injected towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm 3 per minute and/or wherein the process gases are injected into the plasma chamber through the or each gas inlet nozzle with a Reynolds number a Reynolds number in a range 1 to 100.
    • 一种制造合成CVD金刚石材料的方法,所述方法包括:提供微波等离子体反应器,包括:等离子体室; 设置在等离子体室中的一个或多个衬底提供在使用中沉积合成CVD金刚石材料的生长表面区域; 用于将微波从微波发生器馈入等离子体室的微波耦合配置; 以及用于将工艺气体进料到等离子体室中并将其从其中除去的气体流系统,将工艺气体注入到等离子体室中; 通过微波耦合配置将微波从微波发生器馈送到等离子体室中,以在生长表面积之上形成等离子体; 以及在所述生长表面积上生长的合成CVD金刚石材料,其中所述工艺气体包含至少一种气体形式的掺杂剂,其选自硼,硅,硫,磷,锂和铍中的一种或多种,​​其浓度等于或大于 处于浓度等于或大于0.3ppm的0.01ppm和/或氮气,其中所述气体流动系统包括气体入口,所述气体入口包括与生长表面区域相对设置的一个或多个气体入口喷嘴,并且被配置为朝着生长表面注入工艺气体 并且其中所述工艺气体以等于或大于500标准立方厘米/分钟的总气体流速向所述生长表面区域注入,和/或其中所述工艺气体通过所述或每个气体入口喷嘴注入所述等离子体室 雷诺数雷诺数在1到100之间。
    • 9. 发明申请
    • ROBUST RADIATION DETECTOR COMPRISING DIAMOND
    • 包含钻石的鲁棒辐射探测器
    • WO2008059428A2
    • 2008-05-22
    • PCT/IB2007/054583
    • 2007-11-12
    • ELEMENT SIX LIMITEDDONALD, Heather JuneWHITEHEAD, Andrew JohnWORT, Christopher John HowardOLIVER, Kevin John
    • WHITEHEAD, Andrew JohnWORT, Christopher John HowardOLIVER, Kevin John
    • G01T1/26
    • G01T1/26
    • A radiation detector comprises a substrate of diamond material and at least one electrode formed at a surface of the substrate. The electrode comprises electrically conductive material deposited in a cavity in the surface of the substrate so that at least a portion of the material of the electrode is below the surface of the substrate. The cavity will typically be an elongate trench or channel in which electrically conductive material such as boron-doped diamond is deposited. In some embodiments, at least two electrodes are located adjacent to one another at the surface of the substrate. In other embodiments, the device has a plurality of electrodes, at least one of which is located at a first surface and at least one of which is located at an opposed second surface of the substrate. In the latter case, an electrode at one surface of the substrate can be connected to an electrode at the opposed surface of the substrate by means of a conductive via, which consists of a through-hole filled or coated with conductive material. Typically, the electrodes are arranged in an interdigitated configuration, each electrode having a plurality of elongate electrode elements. Each such electrode element extends parallel to at least one adjacent electrode element of another electrode.
    • 放射线检测器包括金刚石材料的衬底和形成在衬底的表面处的至少一个电极。 电极包括沉积在基底表面中的空腔中的导电材料,使得电极的材料的至少一部分位于基底的表面下方。 该腔通常将是其中沉积诸如硼掺杂金刚石之类的导电材料的细长沟槽或沟道。 在一些实施例中,至少两个电极在衬底的表面处彼此相邻定位。 在其他实施例中,该装置具有多个电极,其中至少一个电极位于第一表面处,并且其中至少一个电极位于基板的相对的第二表面处。 在后一种情况下,基板一个表面上的电极可以通过导电通孔连接到基板相对表面上的电极,该导电通孔由填充或涂覆有导电材料的通孔组成。 典型地,电极布置成交叉配置,每个电极具有多个细长电极元件。 每个这样的电极元件平行于另一电极的至少一个相邻电极元件延伸。