专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012084656A1 CONTROLLING DOPING OF SYNTHETIC DIAMOND MATERIAL 审中-公开
标题翻译：控制合成金刚石材料的掺杂
公开(公告)号：WO2012084656A1
公开(公告)日：2012-06-28
申请号：PCT/EP2011/072820
申请日：2011-12-14
申请人： ELEMENT SIX LIMITED , COE, Steven Edward , WILMAN, Jonathan James , TWITCHEN, Daniel James , SCARSBROOK, Geoffrey Alan , BRANDON, John Robert , WORT, Christopher John Howard , MARKHAM, Matthew Lee
发明人： COE, Steven Edward , WILMAN, Jonathan James , TWITCHEN, Daniel James , SCARSBROOK, Geoffrey Alan , BRANDON, John Robert , WORT, Christopher John Howard , MARKHAM, Matthew Lee
IPC分类号： H01J37/32 , C30B29/04
CPC分类号： C30B25/14 , C01B32/25 , C23C16/274 , C23C16/278 , C30B25/02 , C30B25/165 , C30B29/04 , H01J37/32192 , H01J37/32449
摘要： A method of manufacturing synthetic CVD diamond material, the method comprising: providing a microwave plasma reactor comprising: a plasma chamber; one or more substrates disposed in the plasma chamber providing a growth surface area over which the synthetic CVD diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, injecting process gases into the plasma chamber; feeding microwaves from the microwave generator into the plasma chamber through the microwave coupling configuration to form a plasma above the growth surface area; and growing synthetic CVD diamond material over the growth surface area, wherein the process gases comprise at least one dopant in gaseous form, selected from a one or more of boron, silicon, sulphur, phosphorous, lithium and beryllium at a concentration equal to or greater than 0.01 ppm and/or nitrogen at a concentration equal to or greater than 0.3 ppm, wherein the gas flow system includes a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area, and wherein the process gases are injected towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm 3 per minute and/or wherein the process gases are injected into the plasma chamber through the or each gas inlet nozzle with a Reynolds number a Reynolds number in a range 1 to 100.
摘要翻译：一种制造合成CVD金刚石材料的方法，所述方法包括：提供微波等离子体反应器，包括：等离子体室; 设置在等离子体室中的一个或多个衬底提供在使用中沉积合成CVD金刚石材料的生长表面区域; 用于将微波从微波发生器馈入等离子体室的微波耦合配置; 以及用于将工艺气体进料到等离子体室中并将其从其中除去的气体流系统，将工艺气体注入到等离子体室中; 通过微波耦合配置将微波从微波发生器馈送到等离子体室中，以在生长表面积之上形成等离子体; 以及在所述生长表面积上生长的合成CVD金刚石材料，其中所述工艺气体包含至少一种气体形式的掺杂剂，其选自硼，硅，硫，磷，锂和铍中的一种或多种，其浓度等于或大于处于浓度等于或大于0.3ppm的0.01ppm和/或氮气，其中所述气体流动系统包括气体入口，所述气体入口包括与生长表面区域相对设置的一个或多个气体入口喷嘴，并且被配置为朝着生长表面注入工艺气体并且其中所述工艺气体以等于或大于500标准立方厘米/分钟的总气体流速向所述生长表面区域注入，和/或其中所述工艺气体通过所述或每个气体入口喷嘴注入所述等离子体室雷诺数雷诺数在1到100之间。

2. 发明申请

WO2012084661A1 A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL 审中-公开
标题翻译：用于制造合成金刚石材料的微波等离子体反应器
公开(公告)号：WO2012084661A1
公开(公告)日：2012-06-28
申请号：PCT/EP2011/072825
申请日：2011-12-14
申请人： ELEMENT SIX LIMITED , COE, Steven Edward , WILMAN, Jonathan James , TWITCHEN, Daniel James , SCARSBROOK, Geoffrey Alan , BRANDON, John Robert , WORT, Christopher John Howard
发明人： COE, Steven Edward , WILMAN, Jonathan James , TWITCHEN, Daniel James , SCARSBROOK, Geoffrey Alan , BRANDON, John Robert , WORT, Christopher John Howard
IPC分类号： H01J37/32 , C30B29/04
CPC分类号： C23C16/45563 , C23C16/274 , C23C16/45504 , C23C16/45565 , C23C16/511 , C30B25/105 , C30B29/04 , H01J37/32192 , H01J37/32238 , H01J37/3244 , H01J37/32449
摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the gas flow system comprises a gas inlet nozzle array comprising a plurality of gas inlet nozzles disposed opposite the substrate holder for directing process gases towards the substrate holder, the gas inlet nozzle array comprising: at least six gas inlet nozzles disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber; a gas inlet nozzle number density equal to or greater than 0.1 nozzles/cm 2 , wherein the gas inlet nozzle number density is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber and measuring the gas inlet number density on said plane;and a nozzle area ratio of equal to or greater than 10, whereinthe nozzle area ratio is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber, measuring the total area of the gas inlet nozzle area on said plane, dividing by the total number of nozzles to give an area associated with each nozzle, and dividing the area associated with each nozzle by an actual area of each nozzle.
摘要翻译：一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室; 设置在等离子体室中的衬底保持器，用于支撑在使用中沉积合成金刚石材料的衬底; 用于将微波从微波发生器馈入等离子体室的微波耦合配置; 以及用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 其中所述气体流动系统包括气体入口喷嘴阵列，所述气体入口喷嘴阵列包括与所述衬底保持器相对设置的多个气体入口喷嘴，用于将工艺气体引向所述衬底保持器，所述气体入口喷嘴阵列包括：至少六个气体入口喷嘴，或相对于等离子体室的中心轴线的发散取向; 气体入口喷嘴数密度等于或大于0.1喷嘴/ cm2，其中气体入口喷嘴数密度通过将喷嘴投影到平行于等离子体室的中心轴线的平面上并测量气体入口数所述平面上的密度;以及等于或大于10的喷嘴面积比，其中喷嘴面积比通过将喷嘴投射到平行于等离子体室的中心轴线的平面上测量，测量总面积在所述平面上的气体入口喷嘴面积除以总喷嘴数量以给出与每个喷嘴相关联的区域，并且将与每个喷嘴相关联的区域除以每个喷嘴的实际面积。

3. 发明申请

WO2013007605A1 SINGLE CRYSTAL DIAMOND SUBSTRATES FOR SYNTHESIS OF SINGLE CRYSTAL DIAMOND MATERIAL 审中-公开
标题翻译：用于单晶金刚石材料合成的单晶金刚石基体
公开(公告)号：WO2013007605A1
公开(公告)日：2013-01-17
申请号：PCT/EP2012/063171
申请日：2012-07-05
申请人： ELEMENT SIX LIMITED , TWITCHEN, Daniel James , GEOGHEGAN, Sarah Louise , PERKINS, Neil , SCARSBROOK, Geoffrey Alan , BRANDON, John Robert
发明人： TWITCHEN, Daniel James , GEOGHEGAN, Sarah Louise , PERKINS, Neil , SCARSBROOK, Geoffrey Alan , BRANDON, John Robert
IPC分类号： C30B29/04 , B01J3/06 , C30B33/04 , C30B31/20 , C30B25/10
CPC分类号： C30B29/04 , C30B25/105 , C30B33/04
摘要： A method of growing synthetic single crystal diamond material, the method comprising: providing a single crystal diamond substrate; and growing synthetic single crystal diamond material on said single crystal diamond substrate, wherein said single crystal diamond substrate is formed of single crystal diamond material which is irradiated prior to growing synthetic single crystal diamond material thereon, and wherein the irradiation comprises irradiating the diamond material to a depth of 5 μm or greater.
摘要翻译：一种生长合成单晶金刚石材料的方法，所述方法包括：提供单晶金刚石基底; 以及在所述单晶金刚石衬底上生长的合成单晶金刚石材料，其中所述单晶金刚石衬底由在其上生长合成单晶金刚石材料之前被照射的单晶金刚石材料形成，并且其中所述照射包括将所述金刚石材料照射到 5μm以上的深度。

4. 发明申请

WO2012152617A1 DIAMOND SENSORS, DETECTORS, AND QUANTUM DEVICES 审中-公开
标题翻译：钻石传感器，探测器和量子设备
公开(公告)号：WO2012152617A1
公开(公告)日：2012-11-15
申请号：PCT/EP2012/057960
申请日：2012-05-01
申请人： ELEMENT SIX LIMITED , TWITCHEN, Daniel James , MARKHAM, Matthew Lee , SCARSBROOK, Geoffrey Alan
发明人： TWITCHEN, Daniel James , MARKHAM, Matthew Lee , SCARSBROOK, Geoffrey Alan
IPC分类号： C30B25/02 , C30B29/04 , C30B31/22 , C30B33/00 , G06N99/00
CPC分类号： C30B29/04 , C30B25/02 , C30B31/22 , C30B33/00 , G06N99/002
摘要： A synthetic single crystal diamond material comprising: a first region of synthetic single crystal diamond material comprising a plurality of electron donor defects; a second region of synthetic single crystal diamond material comprising a plurality of quantum spin defects; and a third region of synthetic single crystal diamond material disposed between the first and second regions such that the first and second regions are spaced apart by the third region, wherein the second and third regions of synthetic single crystal diamond material have a lower concentration of electron donor defects than the first region of synthetic single crystal diamond material, and wherein the first and second regions are spaced apart by a distance in a range 10 nm to 100 μιη which is sufficiently close to allow electrons to be donated from the first region of synthetic single crystal diamond material to the second region of synthetic single crystal diamond material thus forming negatively charged quantum spin defects in the second region of synthetic single crystal diamond material and positively charged defects in the first region of synthetic single crystal diamond material while being sufficiently far apart to reduce other coupling interactions between the first and second regions which would otherwise unduly reduce the decoherence time of the plurality of quantum spin defects and/or produce strain broaden of a spectral line width of the plurality of quantum spin defects in the second region of synthetic single crystal diamond material.
摘要翻译：一种合成单晶金刚石材料，包括：合成单晶金刚石材料的第一区域，其包含多个电子供体缺陷; 包括多个量子自旋缺陷的合成单晶金刚石材料的第二区域; 以及设置在第一和第二区域之间的合成单晶金刚石材料的第三区域，使得第一和第二区域被第三区域间隔开，其中合成单晶金刚石材料的第二和第三区域具有较低的电子浓度施主缺陷比合成单晶金刚石材料的第一区域，并且其中第一和第二区域间隔开10nm至100μΩ的范围内的距离其足够接近以允许将电子从合成单晶金刚石材料的第一区域捐赠到合成单晶金刚石材料的第二区域，从而在合成单晶金刚石材料的第二区域中形成带负电荷的量子自旋缺陷并带正电荷合成单晶金刚石材料的第一区域中的缺陷，同时足够远以减少第一和第二区域之间的其它耦合相互作用，否则会过度地减少多个量子自旋缺陷的去相干时间和/或产生应变扩展在合成单晶金刚石材料的第二区域中的多个量子自旋缺陷的谱线宽度。

5. 发明申请

WO2006136929A2 HIGH COLOUR DIAMOND 审中-公开
标题翻译：高色金刚石
公开(公告)号：WO2006136929A2
公开(公告)日：2006-12-28
申请号：PCT/IB2006/001694
申请日：2006-06-22
申请人： ELEMENT SIX LIMITED , DONALD, Heather June , WILLIAMS, Stephen David , TWITCHEN, Daniel James , MARTINEAU, Philip Maurice , SCARSBROOK, Geoffrey Alan , FRIEL, Ian
发明人： WILLIAMS, Stephen David , TWITCHEN, Daniel James , MARTINEAU, Philip Maurice , SCARSBROOK, Geoffrey Alan , FRIEL, Ian
IPC分类号： C23C16/27 , C30B25/10 , C30B29/04
CPC分类号： C23C16/278 , C23C16/006 , C23C16/27 , C30B25/02 , C30B25/105 , C30B29/04 , Y10T428/26 , Y10T428/30
摘要： A method of producing CVD diamond having a high colour, which is suitable for optical applications, for example. The method includes adding a gaseous source comprising a second impurity atom type to counter the detrimental effect on colour caused by the presence in the CVD synthesis atmosphere of a first impurity atom type. The described method applies to the production of both single crystal diamond and polycrystalline diamond.
摘要翻译：例如，适用于光学应用的具有高颜色的CVD金刚石的方法。该方法包括添加包含第二杂质原子类型的气态源，以抵消由于在第一杂质原子类型的CVD合成气氛中的存在引起的对颜色的不利影响。所描述的方法适用于单晶金刚石和多晶金刚石的生产。

6. 发明申请

WO2011151416A2 DIAMOND TOOLS 审中-公开
标题翻译：钻石工具
公开(公告)号：WO2011151416A2
公开(公告)日：2011-12-08
申请号：PCT/EP2011/059144
申请日：2011-06-01
申请人： ELEMENT SIX LIMITED , TWITCHEN, Daniel James , GEOGHEGAN, Sarah Louise , PERKINS, Neil , SCARSBROOK, Geoffrey Alan
发明人： TWITCHEN, Daniel James , GEOGHEGAN, Sarah Louise , PERKINS, Neil , SCARSBROOK, Geoffrey Alan
IPC分类号： C01B31/06
CPC分类号： C09K3/14 , B24D18/00 , B24D99/00 , C01B32/28 , C09K3/1409 , C23C14/0611 , C23C14/48 , C30B29/04 , C30B33/04
摘要： A method comprising: selecting a diamond material; irradiating the diamond material to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the diamond material is selected from the group consisting of: a HPHT diamond material having a total equivalent isolated nitrogen concentration in the range 1 to 600 ppm; a CVD diamond material having a total equivalent isolated nitrogen concentration in the range 0.005 to 100 ppm; and a natural diamond material having a total nitrogen concentration in the range 1 to 2000 ppm, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1 x 10 14 to 1 x 10 21 vacancies/cm -3
摘要翻译：一种方法，包括：选择金刚石材料; 照射金刚石材料以增加金刚石材料的韧性和/或耐磨性; 以及将所述金刚石材料加工成一个或多个金刚石工具片，其中所述金刚石材料选自：具有1至600ppm范围内的总当量分离氮浓度的HPHT金刚石材料; 总金属离子氮浓度在0.005〜100ppm范围内的CVD金刚石材料; 和总氮浓度在1至2000ppm范围内的天然金刚石材料，其中所述照射包括控制能量和照射剂量以向金刚石材料提供多个分离的空位缺陷，所述分离的空位点缺陷具有浓度在1×1014至1×1021个空位/ cm -3的范围内

7. 发明申请

WO2012152685A1 DIAMOND SENSORS, DETECTORS, AND QUANTUM DEVICES 审中-公开
标题翻译：钻石传感器，探测器和量子设备
公开(公告)号：WO2012152685A1
公开(公告)日：2012-11-15
申请号：PCT/EP2012/058231
申请日：2012-05-04
申请人： ELEMENT SIX LIMITED , TWITCHEN, Daniel James , MARKHAM, Matthew Lee
发明人： TWITCHEN, Daniel James , MARKHAM, Matthew Lee
IPC分类号： C30B29/04 , C30B25/10
CPC分类号： C30B29/04 , C30B25/105
摘要： A single crystal synthetic CVD diamond material comprising: a growth sector; and a plurality of point defects of one or more type within the growth sector, wherein at least one type of point defect is preferentially aligned within the growth sector, wherein at least 60% of said at least one type of point defect shows said preferential alignment, and wherein the at least one type of point defect is a negatively charged nitrogen-vacancy defect (NV - ).
摘要翻译：一种单晶合成CVD金刚石材料，包括：生长部分; 以及生长扇区内的一种或多种类型的多个点缺陷，其中至少一种类型的点缺陷优先地在所述生长扇区内对齐，其中所述至少一种类型的点缺陷的至少60％表示所述优先对准，并且其中所述至少一种类型的点缺陷是带负电的氮空位缺陷（NV-）。

8. 发明申请

WO2012084750A1 DISLOCATION ENGINEERING IN SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL 审中-公开
标题翻译：单晶合成金刚石材料的分离工程
公开(公告)号：WO2012084750A1
公开(公告)日：2012-06-28
申请号：PCT/EP2011/073147
申请日：2011-12-16
申请人： ELEMENT SIX LIMITED , DHILLON, Harpreet Kaur , DAVIES, Nicholas Matthew , KHAN, Rizwan Uddin Ahmad , TWITCHEN, Daniel James , MARTINEAU, Philip Maurice
发明人： DHILLON, Harpreet Kaur , DAVIES, Nicholas Matthew , KHAN, Rizwan Uddin Ahmad , TWITCHEN, Daniel James , MARTINEAU, Philip Maurice
IPC分类号： C30B25/10 , C30B29/04
CPC分类号： C01B31/06 , C01B32/25 , C30B25/105 , C30B29/04 , Y10T428/24802
摘要： A single crystal CVD synthetic diamond layer comprising a non-parallel dislocation array, wherein the non-parallel dislocation array comprises a plurality of dislocations forming an array of inter-crossing dislocations, as viewed in an X-ray topographic cross-sectional view or under luminescent conditions.
摘要翻译：包括非平行位错阵列的单晶CVD合成金刚石层，其中所述非平行位错阵列包括形成交叉位错阵列的多个位错，如X射线地形剖面图或下图发光条件。

9. 发明申请

WO2012034924A1 A MICROFLUIDIC CELL AND A SPIN RESONANCE DEVICE FOR USE THEREWITH 审中-公开
标题翻译：一种微流控细胞和一种用于其的旋转共振装置
公开(公告)号：WO2012034924A1
公开(公告)日：2012-03-22
申请号：PCT/EP2011/065573
申请日：2011-09-08
申请人： ELEMENT SIX LIMITED , TWITCHEN, Daniel James , MARKHAM, Matthew Lee
发明人： TWITCHEN, Daniel James , MARKHAM, Matthew Lee
IPC分类号： G01R33/30 , B01L9/00 , G01R33/465 , G01R33/60
CPC分类号： B01L3/502715 , B01L3/502707 , B01L2300/0663 , G01R33/24 , G01R33/302 , G01R33/323 , G01R33/465 , G01R33/60
摘要： A microfluidic cell comprising: a microfluidic channel (32) for receiving a fluid sample; and a sensor (30) located adjacent the microfluidic channel; wherein the sensor comprises a diamond material comprising one or more quantum spin defects (34). In use, a fluid sample is loaded into the microfluidic cell and the fluid is analysed via magnetic resonance using the quantum spin defects.
摘要翻译：一种微流体细胞，包括：用于接收流体样品的微流体通道（32）和位于所述微流体通道附近的传感器（30）; 其中所述传感器包括包含一个或多个量子自旋缺陷（34）的金刚石材料。在使用中，将流体样品装载到微流体细胞中，并通过使用量子自旋缺陷的磁共振来分析流体。

10. 发明申请

WO2010149779A1 METHOD FOR MAKING FANCY PALE BLUE OR FANCY PALE BLUE /GREEN SINGLE CRYSTAL CVD DIAMOND AND PRODUCT OBTAINED 审中-公开
标题翻译：制造粉红色蓝色或粉红色蓝色/绿色单晶CVD金刚石和产品的方法
公开(公告)号：WO2010149779A1
公开(公告)日：2010-12-29
申请号：PCT/EP2010/059084
申请日：2010-06-25
申请人： ELEMENT SIX LIMITED , TWITCHEN, Daniel James , GEOGHEGAN, Sarah Louise , PERKINS, Neil
发明人： TWITCHEN, Daniel James , GEOGHEGAN, Sarah Louise , PERKINS, Neil
IPC分类号： C30B29/04 , C30B33/02 , C30B31/20
CPC分类号： C30B29/04 , C30B25/02 , C30B25/10 , C30B31/20 , C30B33/02
摘要： A method of making fancy pale blue or fancy pale blue/green CVD diamond material is described. The method comprises irradiating single crystal diamond material that has been grown by a CVD process with electrons to introduce isolated vacancies into the diamond material, the irradiated diamond material having (or after a further post- irradiation treatment having) a total vacancy concentration [V T ] and a path length L such that [V T ] x L is at least 0.072 ppm cm and at most 0.36 ppm cm, and the diamond material becomes fancy pale blue or fancy pale blue/green in colour. Fancy pale blue diamonds are also described.
摘要翻译：描述了制作花式浅蓝色或花式浅蓝/绿色CVD金刚石材料的方法。该方法包括用电子照射已经通过CVD工艺生长的单晶金刚石材料，以将分离的空位引入金刚石材料中，所照射的金刚石材料具有（或进一步的后照射处理后）具有总空位浓度[VT] 和路径长度L，使得[VT]×L为至少0.072ppmcm且至多0.36ppmcm，并且金刚石材料变成花式淡蓝色或者是浅蓝色/绿色。还描述了迷人的淡蓝色钻石。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式