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1. 发明申请

WO2013011025A3 CUTTER STRUCTURES, INSERTS COMPRISING SAME AND METHOD FOR MAKING SAME 审中-公开
标题翻译：切削结构，包含该切削结构的刀片及其制造方法
公开(公告)号：WO2013011025A3
公开(公告)日：2013-05-02
申请号：PCT/EP2012064003
申请日：2012-07-17
申请人： ELEMENT SIX ABRASIVES , ELEMENT SIX LTD , ELEMENT SIX LTD , BARRY JOHN JAMES , MOLLART TIMOTHY PETER , NILEN ROGER WILLIAM NIGEL
发明人： BARRY JOHN JAMES , MOLLART TIMOTHY PETER , NILEN ROGER WILLIAM NIGEL
IPC分类号： C04B35/645 , B23B27/14 , C04B37/02
CPC分类号： B23K1/0008 , B23B27/143 , B23B27/148 , B23B2226/125 , B23B2226/315 , B23B2240/08 , B23K2201/20 , C04B35/645 , C04B37/026 , C04B2235/427 , C04B2235/5436 , C04B2237/122 , C04B2237/128 , C04B2237/361 , C04B2237/363 , C04B2237/401
摘要： A method of making a cutter structure comprising super-hard material defining a rake face topology is provided. The method includes providing a pre-sinter assembly comprising a substrate body having a formation surface defining a topology complementary to the rake face topology, and an aggregation comprising a plurality of super-hard grains, the aggregation disposed adjacent the formation surface of the substrate body, the substrate body comprising a source of catalyst or binder material capable of promoting the sintering of the super-hard grains at a pressure and temperature at which the super-hard material is thermodynamically stable; subjecting the pre-sinter assembly to the pressure and temperature to provide a sintered polycrystalline super-hard structure joined to the formation surface of the substrate body at a first major boundary of the super-hard structure and having a second major boundary surface opposite the formation surface; removing the substrate body to expose the first major boundary of the super-hard structure defining the rake face topology. Cutter inserts and machine tools are also provided.
摘要翻译：提供了一种制造包括限定前倾面拓扑的超硬材料的刀具结构的方法。该方法包括提供预烧结组件，该预烧结组件包括具有限定与前倾面拓扑互补的拓扑的形成表面的基底主体和包括多个超硬颗粒的聚集体，该聚集体邻近基底主体的形成表面布置所述基体包括催化剂或粘合剂材料源，所述催化剂或粘合剂材料能够在所述超硬材料热力学稳定的压力和温度下促进所述超硬晶粒的烧结; 使预烧结组件经受压力和温度以提供在超硬结构的第一主要边界处与基体主体的形成表面接合并具有与地层相对的第二主要边界表面的烧结多晶超硬结构表面; 去除基体以暴露限定前倾面拓扑的超硬结构的第一主边界。还提供切刀刀片和机床。

2. 发明申请

WO2012034925A8 DIAMOND ELECTRODES FOR ELECTROCHEMICAL DEVICES 审中-公开
标题翻译：电化学设备用金刚石电极
公开(公告)号：WO2012034925A8
公开(公告)日：2013-06-06
申请号：PCT/EP2011065574
申请日：2011-09-08
申请人： ELEMENT SIX LTD , MOLLART TIMOTHY PETER , BRANDON JOHN ROBERT , WILMAN JONATHAN JAMES
发明人： MOLLART TIMOTHY PETER , BRANDON JOHN ROBERT , WILMAN JONATHAN JAMES
IPC分类号： C25B11/12 , C02F1/461 , C25B11/03
CPC分类号： C02F1/46109 , C02F1/4672 , C02F2001/46133 , C02F2001/46152 , C02F2201/46105 , C23C16/28 , C23C16/56 , C25B11/03 , C25B11/12 , C25D17/10
摘要： A bulk boron doped diamond electrode comprising a plurality of grooves disposed in a surface of the bulk boron doped diamond electrode. The bulk boron doped diamond electrode is formed by growing a bulk boron doped diamond electrode using a chemical vapour deposition technique and forming a plurality of grooves in a surface of the bulk boron doped diamond electrode. According to one arrangement, the plurality of grooves are formed by forming a pattern of carbon solvent metal over a surface of the bulk boron doped diamond electrode and heating whereby the carbon solvent metal dissolves underlying diamond to form grooves in the surface of the bulk boron doped electrode. The invention also relates to an electrochemical cell comprising one or more grooved bulk boron doped diamond electrodes. The or each bulk boron doped diamond electrode is oriented within the electrochemical device such that the grooves are aligned in a direction substantially parallel to a direction of electrolyte flow.
摘要翻译：一种体积硼掺杂的金刚石电极，其包括设置在体积掺杂硼的金刚石电极的表面中的多个凹槽。通过使用化学气相沉积技术生长体积掺杂硼的金刚石电极并在体积硼掺杂的金刚石电极的表面中形成多个凹槽来形成体积掺杂硼的金刚石电极。根据一种布置，通过在体积硼掺杂的金刚石电极的表面上形成碳溶剂金属的图案并加热形成多个凹槽，由此碳溶剂金属溶解下面的金刚石以在体积硼掺杂的表面中形成凹槽电极。本发明还涉及一种电化学电池，其包括一个或多个带槽的体积硼掺杂金刚石电极。所述或每个体积硼掺杂的金刚石电极在所述电化学装置内取向，使得所述凹槽在基本上平行于电解质流动方向的方向上排列。

3. 发明申请

WO2012156203A1 ELECTROCHEMICAL SENSOR WITH DIAMOND ELECTRODES 审中-公开
标题翻译：带金刚石电极的电化学传感器
公开(公告)号：WO2012156203A1
公开(公告)日：2012-11-22
申请号：PCT/EP2012/058038
申请日：2012-05-02
申请人： ELEMENT SIX LIMITED , NEWTON, Mark Edward , MACPHERSON, Julie Victoria , HUTTON, Laura Anne , MOLLART, Timothy Peter , SCARSBROOK, Geoffrey Alan
发明人： NEWTON, Mark Edward , MACPHERSON, Julie Victoria , HUTTON, Laura Anne , MOLLART, Timothy Peter , SCARSBROOK, Geoffrey Alan
IPC分类号： G01N23/223 , G01N27/42 , G01N27/48
CPC分类号： G01N27/4163 , G01N21/75 , G01N27/308 , G01N27/48
摘要： An electrochemical sensor comprising: a reference electrode (4) formed of an electrically conductive synthetic doped diamond material and configured to be located in electrical contact with a solution (8) to be analysed; a sensing electrode (2) formed of an electrically conductive synthetic doped diamond material and configured to be located in contact with the solution (8) to be analysed; an electrical controller (10) configured to conduct stripping voltammetric measurements by applying a voltage to the sensing electrode (2), to change the applied voltage relative to the reference electrode (4), and to measure an electric current flowing through the sensing electrode (2) thereby generating voltammetry data; and a calibration system configured to provide an in- situ calibration for providing a reference point in the voltammetric data since the potential of the diamond reference electrode is non fixed and floating. Consequently, assigning of peaks (M1, M2, M3) in the voltammetry data to chemical species (M1, M2, M3) is possible, thereby allowing the type and concentration of chemical species in the solution (8) to be determined. The in-situ calibration consists of: 1 - using a spectrometer for X-rays, Gamma rays or fluorescence measurements integrated in the sensor, 2 - using a known redox couple added to the solution that will provide a reference peak in the voltammetric data, or 3 - producing in-situ ionic species at the vicinity of the reference electrode.
摘要翻译：一种电化学传感器，包括：由导电合成掺杂金刚石材料形成并被配置为与要分析的溶液（8）电接触的参考电极（4）; 感测电极（2），由导电合成掺杂的金刚石材料形成，并被配置为与要分析的溶液（8）接触; 电气控制器（10），被配置为通过向感测电极（2）施加电压来进行溶出伏安测量，以改变施加的电压相对于参考电极（4），并测量流过感测电极的电流（ 2）由此产生伏安数据; 以及校准系统，其被配置为提供在伏安数据中提供参考点的原位校准，因为金刚石参考电极的电位是非固定和浮动的。因此，将伏安数据中的峰（M1，M2，M3）分配到化学物质（M1，M2，M3）是可能的，从而允许确定溶液（8）中化学物质的类型和浓度。原位校准包括：1 - 使用光谱仪进行X射线，伽马射线或集成在传感器中的荧光测量，2 - 使用加到溶液中的已知氧化还原对，其将在伏安数据中提供参考峰，或3-在参比电极附近产生原位离子物质。

4. 发明申请

WO2012084655A2 MICROWAVE PLASMA REACTORS AND SUBSTRATES FOR SYNTHETIC DIAMOND MANUFACTURE 审中-公开
标题翻译： MICROWAVE等离子体反应器和合成金刚石制造基材
公开(公告)号：WO2012084655A2
公开(公告)日：2012-06-28
申请号：PCT/EP2011072818
申请日：2011-12-14
申请人： ELEMENT SIX LTD , DODGE CARLTON NIGEL , INGLIS PAUL NICOLAS , SCARSBROOK GEOFFREY ALAN , MOLLART TIMOTHY PETER , PICKLES CHARLES SIMON JAMES , COE STEVEN EDWARD , DODSON JOSEPH MICHAEL , CULLEN ALEXANDER LAMB , BRANDON JOHN ROBERT , WORT CHRISTOPHER JOHN HOWARD
发明人： DODGE CARLTON NIGEL , INGLIS PAUL NICOLAS , SCARSBROOK GEOFFREY ALAN , MOLLART TIMOTHY PETER , PICKLES CHARLES SIMON JAMES , COE STEVEN EDWARD , DODSON JOSEPH MICHAEL , CULLEN ALEXANDER LAMB , BRANDON JOHN ROBERT , WORT CHRISTOPHER JOHN HOWARD
IPC分类号： H01J37/32 , C23C16/27
CPC分类号： C23C16/274 , C01B32/25 , C23C16/4586 , C23C16/511 , C23C16/52 , C23C16/56 , C30B25/105 , C30B29/04 , H01J37/32192 , H01J37/32284 , Y10T428/12993
摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface,the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric Ez electric field profile across the growth surface in use, the localized axisymmetric Ez electric field profile comprising a substantially flat central portion bound by a ring of higher electric field, the substantially flat central portion extending over at least 60% of an area of the growth surface of the substrate and having an Ez electric field variation of no more than ±10% of a central Ez electric field strength, the ring of higher electric field being disposed around the central portion and having a peak Ez electric field strength in a range 10% to 50% higher than the central Ez electric field strength.
摘要翻译：一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：微波发生器，其被配置为以频率f产生微波; 等离子体室，其包括基底，顶板和从所述底座延伸到所述顶板的侧壁，所述侧壁限定用于在所述基底和所述顶板之间支撑微波共振模式的共振腔; 用于将微波从微波发生器馈送到等离子体室中的微波耦合配置; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 衬底保持器，其设置在所述等离子体室中并且包括用于支撑衬底的支撑表面; 以及设置在所述支撑表面上的基板，所述基板具有生长表面，所述合成金刚石材料将在其上沉积在所述生长表面上，其中所述共振腔内的所述基板尺寸和位置被选择以产生局部轴对称Ez电场分布在使用中的生长表面，局部轴对称Ez电场分布包括由较高电场环结合的基本上平坦的中心部分，基本上平坦的中心部分延伸至衬底的生长表面的至少60％的面积; 具有不大于中心Ez电场强度的±10％的Ez电场变化，较高电场的环设置在中心部分周围，并且具有10％至50％以上范围内的峰值Ez电场强度比中央Ez电场强度高。

5. 发明申请

WO2012034925A1 DIAMOND ELECTRODES FOR ELECTROCHEMCIAL DEVICES 审中-公开
标题翻译：电子器件用金刚石电极
公开(公告)号：WO2012034925A1
公开(公告)日：2012-03-22
申请号：PCT/EP2011/065574
申请日：2011-09-08
申请人： ELEMENT SIX LIMITED , MOLLART, Timothy Peter , BRANDON, John Robert , WILMAN, Jonathan James
发明人： MOLLART, Timothy Peter , BRANDON, John Robert , WILMAN, Jonathan James
IPC分类号： C25B11/12 , C02F1/461 , C25B11/03
CPC分类号： C02F1/46109 , C02F1/4672 , C02F2001/46133 , C02F2001/46152 , C02F2201/46105 , C23C16/28 , C23C16/56 , C25B11/03 , C25B11/12 , C25D17/10
摘要： A bulk boron doped diamond electrode comprising a plurality of grooves disposed in a surface of the bulk boron doped diamond electrode. The bulk boron doped diamond electrode is formed by growing a bulk boron doped diamond electrode using a chemical vapour deposition technique and forming a plurality of grooves in a surface of the bulk boron doped diamond electrode. According to one arrangement, the plurality of grooves are formed by forming a pattern of carbon solvent metal over a surface of the bulk boron doped diamond electrode and heating whereby the carbon solvent metal dissolves underlying diamond to form grooves in the surface of the bulk boron doped electrode. The invention also relates to an electrochemical cell comprising one or more grooved bulk boron doped diamond electrodes. The or each bulk boron doped diamond electrode is oriented within the electrochemical device such that the grooves are aligned in a direction substantially parallel to a direction of electrolyte flow.
摘要翻译：一种体积硼掺杂的金刚石电极，其包括设置在体积掺杂硼的金刚石电极的表面中的多个凹槽。通过使用化学气相沉积技术生长体积掺杂硼的金刚石电极并在体积硼掺杂的金刚石电极的表面中形成多个凹槽来形成体积掺杂硼的金刚石电极。根据一种布置，通过在体积硼掺杂的金刚石电极的表面上形成碳溶剂金属的图案并加热形成多个凹槽，由此碳溶剂金属溶解下面的金刚石以在体积硼掺杂的表面中形成凹槽电极。本发明还涉及一种电化学电池，其包括一个或多个带槽的体积硼掺杂金刚石电极。所述或每个体积硼掺杂的金刚石电极在所述电化学装置内取向，使得所述凹槽在基本上平行于电解质流动方向的方向上排列。

6. 发明申请

WO2008029258A3 SOLID ELECTRODE 审中-公开
标题翻译：固体电极
公开(公告)号：WO2008029258A3
公开(公告)日：2008-05-29
申请号：PCT/IB2007002561
申请日：2007-09-05
申请人： ELEMENT SIX LTD , WILMAN JONATHAN JAMES , BRAY PATRICK SIMON , MOLLART TIMOTHY PETER
发明人： WILMAN JONATHAN JAMES , BRAY PATRICK SIMON , MOLLART TIMOTHY PETER
IPC分类号： C25B11/12 , C02F1/461 , C02F1/467
CPC分类号： C02F1/46109 , C02F1/4672 , C02F2001/46128 , C02F2001/46133 , C02F2001/46147 , C02F2103/343 , C02F2201/46115 , C25B11/12
摘要： The present invention provides a solid diamond electrode, a reactor (20), in particular a reactor comprising an anode (30), a cathode (32) and at least one bipolar electrode (26) having first and second major working surfaces positioned therebetween wherein the at least one bipolar electrode (26) consists essentially of diamond, and methods in which the reactors are used.
摘要翻译：本发明提供一种固体金刚石电极，反应器（20），特别是包括阳极（30），阴极（32）和至少一个双极电极（26）的反应器，其中第一和第二主要工作表面位于其间，其中所述至少一个双极电极（26）基本上由金刚石组成，以及其中使用反应器的方法。

7. 发明申请

WO2006043157A2 DIAMOND COATED SURFACES 审中-公开
标题翻译：金刚石涂层表面
公开(公告)号：WO2006043157A2
公开(公告)日：2006-04-27
申请号：PCT/IB2005/003134
申请日：2005-10-20
申请人： ELEMENT SIX LIMITED , KEMP, Mark , WORT, Christopher John Howard , SCARSBROOK, Geoffrey Alan , MOLLART, Timothy Peter
发明人： WORT, Christopher John Howard , SCARSBROOK, Geoffrey Alan , MOLLART, Timothy Peter
CPC分类号： C23C16/274 , C23C16/0263
摘要： A method of producing a diamond coated surface on a substrate. A surface of the substrate is prepared by exposing it to a power beam, such as an electron beam, to increase the surface area and surface roughness. Such preparation may also provide the surface with three dimensional features onto which a diamond layer can adhere and mechanically lock. Adhesion of a diamond layer applied to the prepared surface is increased.
摘要翻译：一种在衬底上制造金刚石涂覆表面的方法。通过将基底暴露于诸如电子束的功率束来制备基底的表面以增加表面积和表面粗糙度。这样的准备还可以为表面提供三维特征，金刚石层可以粘附和机械锁定在三维特征上。应用于制备表面的金刚石层的附着力增加。

8. 发明申请

WO2013011025A2 CUTTER STRUCTURES, INSERTS COMPRISING SAME AND METHOD FOR MAKING SAME 审中-公开
标题翻译：切割结构，包括它的插入物和制造它们的方法
公开(公告)号：WO2013011025A2
公开(公告)日：2013-01-24
申请号：PCT/EP2012/064003
申请日：2012-07-17
申请人： ELEMENT SIX ABRASIVES , ELEMENT SIX LIMITED , ELEMENT SIX LIMITED , BARRY, John James , MOLLART, Timothy Peter , NILEN, Roger William Nigel
发明人： BARRY, John James , MOLLART, Timothy Peter , NILEN, Roger William Nigel
IPC分类号： C04B35/645 , C04B37/02 , B23B27/14
CPC分类号： B23K1/0008 , B23B27/143 , B23B27/148 , B23B2226/125 , B23B2226/315 , B23B2240/08 , B23K2201/20 , C04B35/645 , C04B37/026 , C04B2235/427 , C04B2235/5436 , C04B2237/122 , C04B2237/128 , C04B2237/361 , C04B2237/363 , C04B2237/401
摘要： A method of making a cutter structure comprising super-hard material defining a rake face topology is provided. The method includes providing a pre-sinter assembly comprising a substrate body having a formation surface defining a topology complementary to the rake face topology, and an aggregation comprising a plurality of super-hard grains, the aggregation disposed adjacent the formation surface of the substrate body, the substrate body comprising a source of catalyst or binder material capable of promoting the sintering of the super-hard grains at a pressure and temperature at which the super-hard material is thermodynamically stable; subjecting the pre-sinter assembly to the pressure and temperature to provide a sintered polycrystalline super-hard structure joined to the formation surface of the substrate body at a first major boundary of the super-hard structure and having a second major boundary surface opposite the formation surface; removing the substrate body to expose the first major boundary of the super-hard structure defining the rake face topology. Cutter inserts and machine tools are also provided.
摘要翻译：提供了一种制造包括限定前刀面拓扑的超硬材料的切割器结构的方法。该方法包括提供预烧结组件，该预烧结组件包括具有限定与前刀面拓扑互补的拓扑的形成表面的基体，以及包含多个超硬晶粒的聚集体，所述聚集物设置在基底本体的形成表面附近所述基材主体包括催化剂或粘合剂材料源，所述催化剂或粘合剂材料能够在超硬材料在热力学上稳定的压力和温度下促进超硬晶粒的烧结; 将预烧结组件经受压力和温度以提供在超硬结构的第一主边界处接合到基体的形成表面的烧结多晶超硬结构，并且具有与形成层相对的第二主边界面表面; 去除衬底体以露出限定前刀面拓扑的超硬结构的第一主要边界。还提供刀具刀片和机床。

9. 发明申请

WO2012126802A1 DIAMOND BASED ELECTROCHEMICAL SENSORS 审中-公开
标题翻译：基于钻石的电化学传感器
公开(公告)号：WO2012126802A1
公开(公告)日：2012-09-27
申请号：PCT/EP2012/054568
申请日：2012-03-15
申请人： ELEMENT SIX LIMITED , MOLLART, Timothy Peter , SCARSBROOK, Geoffrey Alan , NEWTON, Mark Edward , MACPHERSON, Julie Victoria , UNWIN, Patrick Robert
发明人： MOLLART, Timothy Peter , SCARSBROOK, Geoffrey Alan , NEWTON, Mark Edward , MACPHERSON, Julie Victoria , UNWIN, Patrick Robert
IPC分类号： G01N27/30 , G01N33/00
CPC分类号： G01N27/308 , G01N33/0044
摘要： A diamond based electrochemical band sensor comprising: a diamond body; and a plurality of boron doped diamond band electrodes disposed within the diamond body, wherein at least a portion of each of the plurality of boron doped diamond band electrodes is doped with boron to a level suitable to achieve metallic conduction, the boron doped diamond electrodes being spaced apart by non-conductive intrinsic layers of diamond, wherein the diamond body comprises a front sensing surface with the plurality of boron doped diamond band electrodes being exposed at said sensing surface and extending in an elongate manner across said surface, and wherein each boron doped diamond electrode has a length/width ratio of at least 10 at the front sensing surface.
摘要翻译：一种基于金刚石的电化学带传感器，包括：金刚石体; 以及布置在所述金刚石体内的多个掺杂硼的金刚石电极，其中所述多个硼掺杂金刚石电极中的每一个的至少一部分被掺杂到适于实现金属导电的水平，所述硼掺杂金刚石电极为由金刚石的非导电本征层隔开，其中金刚石主体包括前感测表面，其中多个硼掺杂金刚石电极在所述感测表面处露出并且以细长方式延伸穿过所述表面，并且其中每个硼掺杂金刚石电极在前感测表面处的长/宽比至少为10。

10. 发明申请

WO2011161190A1 SUBSTRATES FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：半导体器件基板
公开(公告)号：WO2011161190A1
公开(公告)日：2011-12-29
申请号：PCT/EP2011/060503
申请日：2011-06-22
申请人： ELEMENT SIX LIMITED , THE UNIVERSITY OF BATH , MOLLART, Timothy, Peter , WILMAN, Jonathan, James , DODSON, Joseph, Michael , BALMER, Richard, Stuart , EDWARDS, Michael, John , BOWEN, Christopher, Rhys , ALLSOP, Duncan, William, Edward , LIU, Chaowang
发明人： MOLLART, Timothy, Peter , WILMAN, Jonathan, James , DODSON, Joseph, Michael , BALMER, Richard, Stuart , EDWARDS, Michael, John , BOWEN, Christopher, Rhys , ALLSOP, Duncan, William, Edward , LIU, Chaowang
IPC分类号： H01L21/20 , H01L21/762 , H01L21/02
CPC分类号： H01L21/02378 , C23C16/274 , C30B25/02 , C30B29/04 , C30B29/06 , C30B29/36 , H01L21/02381 , H01L21/02527 , H01L21/02595 , H01L21/2007
摘要： A method of manufacturing a composite substrate for a semiconductor device, the method comprising: selecting a wafer comprising single crystal silicon or silicon carbide, the wafer having a thickness in a range 0.3 mm to 2.0 mm; growing a polycrystalline diamond layer on the wafer using a chemical vapour deposition technique at a first temperature in a range 700°C to 1200°C to form a composite comprising the wafer bonded to the polycrystalline diamond layer, the polycrystalline diamond layer having a thickness in a range 50 μm to 150 μm; heating or cooling the composite to a second temperature to generate a strain field in the wafer which is sufficient to enable cleavage of the wafer at a distance of 15 μm or less from an interface with the polycrystalline diamond layer while being low enough to avoid the wafer fragmenting and/or the polycrystalline diamond layer cracking; and cleaving the wafer at a distance of 15 μm or less from an interface with the polycrystalline diamond layer to release strain energy and form a composite substrate comprising the polycrystalline diamond layer directly bonded to a cleaved layer comprising single crystal silicon or silicon carbide, the cleaved layer having a thickness of 15 μm or less.
摘要翻译：一种制造半导体器件的复合衬底的方法，所述方法包括：选择包括单晶硅或碳化硅的晶片，所述晶片的厚度在0.3mm至2.0mm的范围内; 使用化学气相沉积技术在700℃至1200℃的第一温度下在晶片上生长多晶金刚石层，以形成包含与多晶金刚石层结合的晶片的复合物，多晶金刚石层的厚度为范围在50μm至150μm之间; 将复合材料加热或冷却至第二温度以在晶片中产生足够的应变场，该应变场足以使得能够从与多晶金刚石层的界面在15μm或更小的距离处切割晶片，同时足够低以避免晶片破碎和/或多晶金刚石层开裂; 并从与多晶金刚石层的界面15μm或更小的距离处切割晶片以释放应变能并形成包括直接结合到包含单晶硅或碳化硅的切割层的多晶金刚石层的复合衬底，所述切割的层的厚度为15μm以下。

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