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1. 发明申请

WO2014040650A1 DIAMOND MICROELECTRODE 审中-公开
标题翻译：金刚石微电极
公开(公告)号：WO2014040650A1
公开(公告)日：2014-03-20
申请号：PCT/EP2012/068213
申请日：2012-09-17
申请人： ELEMENT SIX LIMITED , ELEMENT SIX LIMITED
发明人： MOLLART, Timothy Peter , SCARSBROOK, Geoffrey Alan , OLIVER, Kevin John , LYNN, Stephen Charles
IPC分类号： G01N27/30
CPC分类号： G01N27/308
摘要： A microelectrode for electrochemical use is described. The microelectrode comprises: • (a) an electrically non-conductive diamond plate (2) having a first surface (4) containing at least two discrete recesses (16,18) and an opposed second surface (6); • (b) electrically conductive diamond material contained within said recesses and being substantially flush with the first surface of said diamond plate, the electrically conductive diamond material in each of said at least two discrete recesses providing respective working electrodes in use; and • (c) at least two electrically conductive connection members (12) that extend from the second surface of the electrically non-conductive diamond plate into the electrically non-conductive diamond plate, such that each of the connection members is electrically connected to respective ones of the working electrodes.
摘要翻译：描述了用于电化学使用的微电极。微电极包括：（a）具有包含至少两个离散凹槽（16,18）和相对的第二表面（6）的第一表面（4）的非导电金刚石板（2）。 •（b）包含在所述凹槽内并与所述金刚石板的第一表面基本齐平的导电金刚石材料，所述至少两个离散凹槽中的每一个中的导电金刚石材料提供使用中的相应工作电极; 和（c）从所述非导电金刚石板的第二表面延伸到所述非导电金刚石板中的至少两个导电连接构件（12），使得每个所述连接构件电连接到相应的其中一个工作电极。

2. 发明申请

WO2013011025A2 CUTTER STRUCTURES, INSERTS COMPRISING SAME AND METHOD FOR MAKING SAME 审中-公开
标题翻译：切割结构，包括它的插入物和制造它们的方法
公开(公告)号：WO2013011025A2
公开(公告)日：2013-01-24
申请号：PCT/EP2012/064003
申请日：2012-07-17
申请人： ELEMENT SIX ABRASIVES , ELEMENT SIX LIMITED , ELEMENT SIX LIMITED , BARRY, John James , MOLLART, Timothy Peter , NILEN, Roger William Nigel
发明人： BARRY, John James , MOLLART, Timothy Peter , NILEN, Roger William Nigel
IPC分类号： C04B35/645 , C04B37/02 , B23B27/14
CPC分类号： B23K1/0008 , B23B27/143 , B23B27/148 , B23B2226/125 , B23B2226/315 , B23B2240/08 , B23K2201/20 , C04B35/645 , C04B37/026 , C04B2235/427 , C04B2235/5436 , C04B2237/122 , C04B2237/128 , C04B2237/361 , C04B2237/363 , C04B2237/401
摘要： A method of making a cutter structure comprising super-hard material defining a rake face topology is provided. The method includes providing a pre-sinter assembly comprising a substrate body having a formation surface defining a topology complementary to the rake face topology, and an aggregation comprising a plurality of super-hard grains, the aggregation disposed adjacent the formation surface of the substrate body, the substrate body comprising a source of catalyst or binder material capable of promoting the sintering of the super-hard grains at a pressure and temperature at which the super-hard material is thermodynamically stable; subjecting the pre-sinter assembly to the pressure and temperature to provide a sintered polycrystalline super-hard structure joined to the formation surface of the substrate body at a first major boundary of the super-hard structure and having a second major boundary surface opposite the formation surface; removing the substrate body to expose the first major boundary of the super-hard structure defining the rake face topology. Cutter inserts and machine tools are also provided.
摘要翻译：提供了一种制造包括限定前刀面拓扑的超硬材料的切割器结构的方法。该方法包括提供预烧结组件，该预烧结组件包括具有限定与前刀面拓扑互补的拓扑的形成表面的基体，以及包含多个超硬晶粒的聚集体，所述聚集物设置在基底本体的形成表面附近所述基材主体包括催化剂或粘合剂材料源，所述催化剂或粘合剂材料能够在超硬材料在热力学上稳定的压力和温度下促进超硬晶粒的烧结; 将预烧结组件经受压力和温度以提供在超硬结构的第一主边界处接合到基体的形成表面的烧结多晶超硬结构，并且具有与形成层相对的第二主边界面表面; 去除衬底体以露出限定前刀面拓扑的超硬结构的第一主要边界。还提供刀具刀片和机床。

3. 发明申请

WO2022184360A1 METHOD OF POLISHING A POLYCRYSTALLINE DIAMOND BODY 审中-公开
公开(公告)号：WO2022184360A1
公开(公告)日：2022-09-09
申请号：PCT/EP2022/052413
申请日：2022-02-02
申请人： ELEMENT SIX LIMITED
发明人： SCALBERT, William
IPC分类号： B23K26/0622 , B23K26/082 , B23K26/08 , B23K26/352 , B23K26/402
摘要： This disclosure relates to polishing a polycrystalline diamond body. A femtosecond laser system with a maximum average power of 1.1 kW and a minimum average power of 900 W is operated to ablate the surface of a polycrystalline diamond body and thereby reduce its surface roughness.

4. 发明申请

WO2015000760A1 SUPER-HARD CONSTRUCTIONS, METHOD FOR MAKING SAME AND METHOD FOR PROCESSING SAME 审中-公开
标题翻译：超硬结构，其制造方法及其加工方法
公开(公告)号：WO2015000760A1
公开(公告)日：2015-01-08
申请号：PCT/EP2014/063386
申请日：2014-06-25
申请人： ELEMENT SIX LIMITED
发明人： SANDSTRÖM, Karl, Bernt-Ola
IPC分类号： C04B35/52 , C04B37/00
CPC分类号： C04B35/52 , B22F7/062 , C04B35/5831 , C04B37/00 , C04B37/021 , C04B2237/361 , C04B2237/363 , C04B2237/76 , C22C26/00 , C22C2204/00
摘要： A construction comprising a sintered polycrystalline super-hard layer having mutually opposite reinforced boundaries, each of which is bonded to a respective reinforcement structure, in which the super-hard layer comprises polycrystalline diamond (PCD) material or polycrystalline cubic boron nitride (PCBN) material. The construction will be configured such that the equivalent circle diameter of each reinforced boundary is at least ten times the mean thickness of the super-hard layer between them. The reinforcement structures will be substantially free of material having a melting point of less than 2,000 degrees Celsius, at least adjacent the reinforced boundaries.
摘要翻译：一种结构，其包括具有相互相反的加强边界的烧结多晶超硬层，其各自结合到相应的加强结构，其中超硬层包括多晶金刚石（PCD）材料或多晶立方氮化硼（PCBN）材料。该结构将被构造成使得每个加强边界的等效圆直径至少是它们之间的超硬层的平均厚度的十倍。加强结构将基本上不含熔点低于2000摄氏度的材料，至少在加强边界附近。

5. 发明申请

WO2013144017A1 PRESSURE CARTRIDGE 审中-公开
标题翻译：压力盒
公开(公告)号：WO2013144017A1
公开(公告)日：2013-10-03
申请号：PCT/EP2013/056088
申请日：2013-03-22
申请人： ELEMENT SIX LIMITED
发明人： VOGGENREITER, Maximilian , VOGGENREITER, Thomas Heinrich , PETRI, Michael Martin
IPC分类号： B30B11/00
CPC分类号： F15B15/08 , B30B11/004 , B30B11/007
摘要： A cartridge assembly comprising a chamber for containing hydraulic fluid, an intensifier element capable of reciprocating in the chamber and displacing the hydraulic fluid responsive to a drive means acting on the intensifier element, and a piston capable of reciprocating in the chamber and being displaceable responsive to a change in the pressure of the hydraulic fluid. The cartridge assembly is configured so that when the pressure in the fluid increases responsive to a first force being applied by the drive means on the intensifier, the hydraulic fluid will exert a second force on the piston, the second force being greater than the first force; the mass of the hydraulic fluid being substantially conserved within the cartridge assembly.
摘要翻译：一种墨盒组件，包括用于容纳液压流体的腔室，能够在腔室中往复运动并且响应于作用在增压器元件上的驱动装置移动液压流体的增压器元件，以及能够在腔室中往复运动并且可响应于液压油压力的变化。墨盒组件被构造成使得当流体中的压力响应于驱动装置在增压器上施加的第一力而增加时，液压流体将在活塞上施加第二力，第二力大于第一力 ; 液压流体的质量基本上保持在盒组件内。

6. 发明申请

WO2013087704A1 SUBSTRATES FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：半导体器件基板
公开(公告)号：WO2013087704A1
公开(公告)日：2013-06-20
申请号：PCT/EP2012/075250
申请日：2012-12-12
申请人： ELEMENT SIX LIMITED
发明人： MOLLART, Timothy Peter , JIANG, Quanzhong , BOWEN, Christopher Rhys , ALLSOPP, Duncan William Edward , EDWARDS, Michael John
IPC分类号： C23C16/27 , H01L21/02
CPC分类号： C30B25/186 , C23C16/01 , C23C16/274 , H01L21/02115 , H01L21/02381 , H01L21/02439 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02527 , H01L21/311 , H01L21/31111 , H01L21/31122 , H01L23/3732 , H01L29/0649 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a composite substrate for a semiconductor device, the method comprising: selecting a substrate wafer comprising: a first layer of single crystal material suitable for epitaxial growth of a compound semiconductor thereon and having a thickness of 100 μm or less;a second layer having a thickness of no less than 0.5 μm and formed of a material having a lower thermal expansion coefficient than the first layer of single crystal material and/or is formed of a material which has a higher fracture strength than that of the first layer of single crystal material; and a third layer forming a handling wafer on which the first and second layers are disposed, wherein the substrate wafer has an aspect ratio, defined by a ratio of thickness to width, of no less than 0.25/100; growing a first polycrystalline CVD diamond layer on the first layer of single crystal material using a chemical vapour deposition technique to form a composite comprising the substrate wafer bonded to the polycrystalline diamond layer via the first layer of single crystal material, wherein during growth of the first polycrystalline CVD diamond layer a temperature difference at a growth surface between an edge and a centre point thereof is maintained to be no more than 80°C; and removing the second and third layers of the substrate wafer to form a composite substrate comprising the polycrystalline diamond layer directly bonded to the first layer of single crystal material.
摘要翻译：一种制造半导体器件的复合衬底的方法，所述方法包括：选择衬底晶片，其包括：第一层单晶材料，其适于在其上外延生长化合物半导体并具有100μm以下的厚度;第二层层，其厚度不小于0.5μm，由具有比第一层单晶材料低的热膨胀系数的材料形成，和/或由具有比第一层的第一层高的断裂强度的材料形成单晶材料; 以及形成其上设置有所述第一和第二层的处理晶片的第三层，其中所述衬底晶片具有不小于0.25 / 100的由厚度与宽度的比定义的纵横比; 使用化学气相沉积技术在第一层单晶材料上生长第一多晶CVD金刚石层，以形成包含通过第一层单晶材料结合到多晶金刚石层的衬底晶片的复合物，其中在第一多晶CVD金刚石层在其边缘和中心点之间的生长表面的温度差保持在不超过80℃; 以及去除所述衬底晶片的所述第二层和第三层以形成包括直接接合到所述第一层单晶材料层的所述多晶金刚石层的复合衬底。

7. 发明申请

WO2012163834A1 CUTTER CONSTRUCTIONS AND METHOD FOR MAKING SAME 审中-公开
标题翻译：切割机构造及其制作方法
公开(公告)号：WO2012163834A1
公开(公告)日：2012-12-06
申请号：PCT/EP2012/059847
申请日：2012-05-25
申请人： ELEMENT SIX LIMITED , EGAN, David Patrick
发明人： EGAN, David Patrick
IPC分类号： B24D3/06 , B24D18/00 , B24B27/06
CPC分类号： B24D18/00 , B24B27/0633 , B24D3/06
摘要： A method for making a cutter construction comprising a cutter body joined to a carrier body, the method including providing the cutter body with a cutter coat structure, at least one of the carrier body and the cutter coat structure comprising a first material and the other comprising a second material, the first material having a lower melting point than the second material and being capable of wetting it, taking it into solution and reacting with it to produce a solid phase; heating the carrier body to above the melting point of the first material and contacting the cutter coat structure of the cutter body with the carrier body for a sufficient period for the first material to melt and for sufficient solid phase to form between the cutter body and the carrier body and join the cutter body to the carrier body; the heat being applied to the first and second materials via the carrier body.
摘要翻译：一种用于制造切割器结构的方法，其包括连接到载体主体的切割器主体，所述方法包括为切割器主体提供切割器涂层结构，载体主体和切割器涂层结构中的至少一个包括第一材料，而另一个包括第二材料，第一材料具有比第二材料低的熔点并能够润湿第一材料，将其溶解并与其反应以产生固相; 将载体主体加热到第一材料的熔点之上，并使切割器主体的切割涂层结构与载体本体接触足够的时间以使第一材料熔化，并且在切割器主体和第二材料之间形成足够的固相承载体，并将刀体连接到载体上; 所述热量经由所述载体主体施加到所述第一和第二材料。

8. 发明申请

WO2012159896A1 DIAMOND SENSORS, DETECTORS, AND QUANTUM DEVICES 审中-公开
标题翻译：钻石传感器，探测器和量子设备
公开(公告)号：WO2012159896A1
公开(公告)日：2012-11-29
申请号：PCT/EP2012/058682
申请日：2012-05-10
申请人： ELEMENT SIX LIMITED , TWITCHEN, Daniel, James , MARKHAM, Matthew, Lee
发明人： TWITCHEN, Daniel, James , MARKHAM, Matthew, Lee
IPC分类号： G01N24/10 , G01R33/60 , C30B29/04 , H01L21/04 , G06N99/00 , B82Y10/00 , G01R33/24 , G01R33/30
CPC分类号： H01L29/1602 , B82Y10/00 , C30B29/04 , C30B29/64 , C30B31/22 , C30B33/08 , G01N24/10 , G01R33/24 , G01R33/302 , G01R33/60 , G06N99/002 , H01L21/0405 , H01L29/157 , H01L29/167
摘要： A thin plate of synthetic single crystal diamond material, the thin plate of synthetic single crystal diamond material having: a thickness in a range 100 nm to 50 μιη; a concentration of quantum spin defects greater than 0.1 ppb (parts-per-billion); a concentration of point defects other than the quantum spin defects of below 200 ppm (parts-per-million); and wherein at least one major face of the thin plate of synthetic single crystal diamond material comprises surface termination species which have zero nuclear spin and/or zero electron spin.
摘要翻译：合成单晶金刚石材料的薄板，合成单晶金刚石材料的薄板具有：厚度在100nm至50μΩ的范围内; 量子自旋缺陷的浓度大于0.1ppb（十亿分之一）; 量子自旋缺陷以外的点缺陷浓度低于200ppm（百万分之一）; 并且其中所述合成单晶金刚石材料薄板的至少一个主面包括具有零核自旋和/或零电子自旋的表面终止物质。

9. 发明申请

WO2012110357A1 COATED SPEAKER DOME AND COATED DIAMOND PRODUCTS 审中-公开
标题翻译：涂层扬声器和面漆金刚石产品
公开(公告)号：WO2012110357A1
公开(公告)日：2012-08-23
申请号：PCT/EP2012/052020
申请日：2012-02-07
申请人： ELEMENT SIX LIMITED , INGLIS, Paul, Nicolas , BRANDON, John Robert , PERKINS, Neil
发明人： INGLIS, Paul, Nicolas , BRANDON, John Robert , PERKINS, Neil
IPC分类号： H04R7/12
CPC分类号： H04R7/127 , H04R7/122 , H04R7/125 , H04R31/003 , H04R2307/023 , H04R2307/027
摘要： The invention relates to a speaker dome comprising: a polycrystalline diamond dome body formed of a material of high stiffness with a Young's modulus greater than 50 GPa and having respective inner and outer surfaces; and a coating on at least one side of the dome body, wherein the coating comprises an optically refractive metal compound layer which is semi-transparent and which forms one or more colours via interference of reflected light from front and rear surfaces of the layer. The invention also relates to a diamond component comprising: a diamond body; and a coating on at least one side of the diamond body, wherein the coating comprises at least two layers including a first layer bonded to the at least one side of the diamond body and a second layer disposed over the first layer, the second layer being an optically refractive metal compound coating which is semi-transparent and which forms one or more colours via interference of reflected light from front and rear surfaces of the second layer.
摘要翻译：本发明涉及一种扬声器圆顶，包括：多晶金刚石圆顶体，其由高刚度的材料形成，杨氏模量大于50GPa，并具有相应的内表面和外表面; 以及在所述圆顶体的至少一侧上的涂层，其中所述涂层包括半透明的光学折射金属化合物层，并且通过所述层的前表面和后表面的反射光的干涉而形成一种或多种颜色。本发明还涉及一种金刚石组件，其包括：金刚石体; 以及在所述金刚石体的至少一侧上的涂层，其中所述涂层包括至少两层，包括结合到所述金刚石体的至少一侧的第一层和设置在所述第一层上的第二层，所述第二层为光学折射金属化合物涂层，其是半透明的并且通过干扰来自第二层的前表面和后表面的反射光形成一种或多种颜色。

10. 发明申请

WO2012084750A1 DISLOCATION ENGINEERING IN SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL 审中-公开
标题翻译：单晶合成金刚石材料的分离工程
公开(公告)号：WO2012084750A1
公开(公告)日：2012-06-28
申请号：PCT/EP2011/073147
申请日：2011-12-16
申请人： ELEMENT SIX LIMITED , DHILLON, Harpreet Kaur , DAVIES, Nicholas Matthew , KHAN, Rizwan Uddin Ahmad , TWITCHEN, Daniel James , MARTINEAU, Philip Maurice
发明人： DHILLON, Harpreet Kaur , DAVIES, Nicholas Matthew , KHAN, Rizwan Uddin Ahmad , TWITCHEN, Daniel James , MARTINEAU, Philip Maurice
IPC分类号： C30B25/10 , C30B29/04
CPC分类号： C01B31/06 , C01B32/25 , C30B25/105 , C30B29/04 , Y10T428/24802
摘要： A single crystal CVD synthetic diamond layer comprising a non-parallel dislocation array, wherein the non-parallel dislocation array comprises a plurality of dislocations forming an array of inter-crossing dislocations, as viewed in an X-ray topographic cross-sectional view or under luminescent conditions.
摘要翻译：包括非平行位错阵列的单晶CVD合成金刚石层，其中所述非平行位错阵列包括形成交叉位错阵列的多个位错，如X射线地形剖面图或下图发光条件。

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