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1. 发明申请

WO2006053055A3 HIGH-VOLTAGE TRANSISTOR FABRICATION WITH TRENCH ETCHING TECHNIQUE 审中-公开
标题翻译：具有TRENCH蚀刻技术的高压晶体管制造
公开(公告)号：WO2006053055A3
公开(公告)日：2009-04-16
申请号：PCT/US2005040615
申请日：2005-11-09
申请人： FULTEC SEMICONDUCTOR INC , BLANCHARD RICHARD A , HEBERT FRANCOIS
发明人： BLANCHARD RICHARD A , HEBERT FRANCOIS
IPC分类号： H01L21/336
CPC分类号： H01L29/7838 , H01L23/535 , H01L29/0626 , H01L29/0646 , H01L29/0692 , H01L29/1066 , H01L29/2003 , H01L29/4236 , H01L29/4238 , H01L29/808 , H01L2924/0002 , H01L2924/00
摘要： A lateral high-voltage depletion-mode device structure in which fingers of semiconductor material are interdigitated with trench gates. Since the effective channel area is proportional to the depth of the trenches, a large amount of active channel area can be achieved for a given surface area.
摘要翻译：一种横向高压耗尽型器件结构，其中半导体材料的指状物与沟槽栅极交错。由于有效通道面积与沟槽的深度成比例，所以对于给定的表面积可以获得大量的有效沟道面积。

2. 发明申请

WO2012006261A3 POWER SEMICONDUCTOR DEVICES, STRUCTURES, AND RELATED METHODS 审中-公开
标题翻译：功率半导体器件，结构和相关方法
公开(公告)号：WO2012006261A3
公开(公告)日：2012-05-10
申请号：PCT/US2011042914
申请日：2011-07-05
申请人： DARWISH MOHAMED N , ZENG JUN , BLANCHARD RICHARD A , MAXPOWER SEMICONDUCTOR INC
发明人： DARWISH MOHAMED N , ZENG JUN , BLANCHARD RICHARD A
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7393 , H01L21/26586 , H01L29/0634 , H01L29/0873 , H01L29/0878 , H01L29/1095 , H01L29/167 , H01L29/402 , H01L29/407 , H01L29/408 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/7802 , H01L29/7813 , H01L29/7816
摘要： Power semiconductor devices, and related methods, where majority carrier flow is divided into paralleled flows through two drift regions of opposite conductivity types.
摘要翻译：功率半导体器件以及相关方法，其中大部分载流子被分成平行流经相反导电类型的两个漂移区。

3. 发明申请

WO2011035331A3 DEVICES, STRUCTURES, AND METHODS USING SELF-ALIGNED RESISTIVE SOURCE EXTENSIONS 审中-公开
标题翻译：器件，结构和使用自对准电阻源扩展的方法
公开(公告)号：WO2011035331A3
公开(公告)日：2011-07-28
申请号：PCT/US2010049716
申请日：2010-09-21
申请人： BLANCHARD RICHARD A , DARWISH MOHAMED N , ZENG JUN , MAXPOWER SEMICONDUCTOR INC
发明人： BLANCHARD RICHARD A , DARWISH MOHAMED N , ZENG JUN
IPC分类号： H01L29/73 , H01L29/732 , H01L29/78
CPC分类号： H01L29/408 , H01L21/2255 , H01L29/0839 , H01L29/086 , H01L29/66333 , H01L29/66348 , H01L29/66712 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7802 , H01L29/7813
摘要： Devices, structures, and related methods for IGBTs and the like which include a self-aligned series resistance at the source-body junction to avoid latchup. The series resistance is achieved by using a charged dielectric, and/or by using a dielectric which provides a source of dopant atoms of the same conductivity type as the source region, at a sidewall adjacent to the source region.
摘要翻译：用于IGBT等的器件，结构和相关方法包括源 - 体结处的自对准串联电阻以避免闭锁。串联电阻通过使用带电的电介质和/或通过使用在与源极区域相邻的侧壁处提供与源极区域相同的导电类型的掺杂剂原子的源的电介质来实现。

4. 发明申请

WO2010127370A3 SERIES CURRENT LIMITING DEVICE 审中-公开
标题翻译：系列电流限制器件
公开(公告)号：WO2010127370A3
公开(公告)日：2011-03-10
申请号：PCT/US2010033451
申请日：2010-05-03
申请人： ANKOUDINOV ALEXEI , RODOV VLADIMIR , BLANCHARD RICHARD A , LAKOTA TECHNOLOGIES INC
发明人： ANKOUDINOV ALEXEI , RODOV VLADIMIR , BLANCHARD RICHARD A
IPC分类号： H01L29/861 , H01L21/82 , H01L23/62
CPC分类号： H01L27/088 , H01L29/423 , H01L29/7803 , H01L29/7813 , H01L29/7815 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor protection devices, and related methods and systems, especially devices for providing series current limiting. The device typically comprises two regenerative building blocks and/or MOSFETs connected back-to-back in series, where one of the MOSFETs/Regenerative Building Blocks has an extra voltage probe electrode that provides a regenerative signal with self-limited voltage to the other via coupling to its gate electrode.
摘要翻译：半导体保护装置及相关方法和系统，尤其是用于提供串联电流限制的装置。器件通常包括串联背对背连接的两个再生建筑模块和/或MOSFET，其中一个MOSFET /再生构件模块具有一个额外的电压探针电极，其向另一个通孔提供具有自限制电压的再生信号耦合到其栅电极。

5. 发明申请

WO2012031178A3 A LIGHT EMITTING APPARATUS 审中-公开
标题翻译：发光装置
公开(公告)号：WO2012031178A3
公开(公告)日：2012-10-18
申请号：PCT/US2011050292
申请日：2011-09-02
申请人： PROCTER & GAMBLE , RAY WILLIAM JOHNSTONE , LOWENTHAL MARK D , SHOTTON NEIL O , BLANCHARD RICHARD A , LEWANDOWSKI MARK ALLAN , ORAW BRAD , STEINHARDT MARK JOHN , BISCHOFF COREY MICHAEL , SAWICKI EDWARD MACK , MCGUIRE KENNETH STEPHEN , HASENOEHRL ERIK JOHN
发明人： RAY WILLIAM JOHNSTONE , LOWENTHAL MARK D , SHOTTON NEIL O , BLANCHARD RICHARD A , LEWANDOWSKI MARK ALLAN , ORAW BRAD , STEINHARDT MARK JOHN , BISCHOFF COREY MICHAEL , SAWICKI EDWARD MACK , MCGUIRE KENNETH STEPHEN , HASENOEHRL ERIK JOHN
IPC分类号： H01L33/00 , F21K99/00 , F21Y105/00 , H01L21/98 , H01L25/075 , H01L33/44
CPC分类号： H01L25/0753 , F21K9/232 , F21W2121/00 , F21Y2115/10 , H01L24/95 , H01L33/20 , H01L33/38 , H01L33/44 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/13033 , H01L2924/13034 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A lighting apparatus comprising a plurality of diodes and an electrical interface configured to receive an electrical signal and transmit the electrical signal to the plurality of diodes is provided.
摘要翻译：提供一种照明装置，其包括多个二极管和被配置为接收电信号并将电信号发送到多个二极管的电接口。

6. 发明申请

WO2011133481A3 POWER MOSFET WITH EMBEDDED RECESSED FIELD PLATE AND METHODS OF FABRICATION 审中-公开
标题翻译：具有嵌入式场地板的功率MOSFET和制造方法
公开(公告)号：WO2011133481A3
公开(公告)日：2012-02-23
申请号：PCT/US2011032939
申请日：2011-04-19
申请人： MAXPOWER SEMICONDUCTOR INC , DARWISH MOHAMED N , ZENG JUN , SU SHIH-TZUNG , BLANCHARD RICHARD A
发明人： DARWISH MOHAMED N , ZENG JUN , SU SHIH-TZUNG , BLANCHARD RICHARD A
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0623 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/456 , H01L29/66727 , H01L29/66734
摘要： Semiconductor power devices, and related methods, wherein a recessed contact makes lateral ohmic contact to the source diffusion, but is insulated from the underlying recessed field plate (RFP). Such an insulated RFP is here referred to as an embedded recessed field plate (ERFP).
摘要翻译：半导体功率器件和相关方法，其中凹陷接触件对源极扩散进行横向欧姆接触，但与下面的凹陷场板（RFP）绝缘。这种绝缘RFP在这里被称为嵌入式凹入场板（ERFP）。

7. 发明申请

WO2006130665A3 MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICE INCLUDING A SUPERLATTICE AND ASSOCIATED METHODS 审中-公开
标题翻译：微电子系统（MEMS）器件，包括超导和相关方法
公开(公告)号：WO2006130665A3
公开(公告)日：2007-01-18
申请号：PCT/US2006021082
申请日：2006-05-31
申请人： RJ MEARS LLC , BLANCHARD RICHARD A
发明人： BLANCHARD RICHARD A
IPC分类号： B81B3/00
CPC分类号： B81B3/0035
摘要： A microelectromechanical system (MEMS) device may include a substrate and at least one movable member supported by the substrate. The at least one movable member may include a superlattice including a plurality of stacked groups of layers with each group of layers of the superlattice comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
摘要翻译：微机电系统（MEMS）装置可以包括衬底和由衬底支撑的至少一个可动构件。所述至少一个可移动部件可以包括超晶格，其包括多个堆叠的层组，所述超晶格的每组层包括限定基极半导体部分的多个堆叠的基底半导体单层和限定在其中的至少一个非半导体单层相邻的基底半导体部分的晶格。

8. 发明申请

WO2012031092A2 DIODES, PRINTABLE COMPOSITIONS OF A LIQUID OR GEL SUSPENSION OF DIODES OR OTHER TWO-TERMINAL INTEGRATED CIRCUITS, AND METHODS OF MAKING SAME 审中-公开
标题翻译：二极管，二极管或其他二端集成电路的液体或凝胶悬浮液的可印刷组合物及其制备方法
公开(公告)号：WO2012031092A2
公开(公告)日：2012-03-08
申请号：PCT/US2011050168
申请日：2011-09-01
申请人： NTHDEGREE TECH WORLDWIDE INC , LOWENTHAL MARK D , RAY WILLIAM JOHNSTONE , SHOTTON NEIL O , BLANCHARD RICHARD A , ORAW BRAD , LEWANDOWSKI MARK ALLAN , BALDRIDGE JEFFREY , PEROZZIELLO ERIC ANTHONY
发明人： LOWENTHAL MARK D , RAY WILLIAM JOHNSTONE , SHOTTON NEIL O , BLANCHARD RICHARD A , ORAW BRAD , LEWANDOWSKI MARK ALLAN , BALDRIDGE JEFFREY , PEROZZIELLO ERIC ANTHONY
IPC分类号： H01L51/54
CPC分类号： H01L25/0753 , C09D11/52 , H01L24/05 , H01L25/50 , H01L33/20 , H01L33/38 , H01L2224/05556 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/13033 , H01L2924/13034 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/00
摘要： An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. In other exemplary embodiments a second solvent is also included, and the composition has a viscosity substantially between about 1,000 cps and about 25,000 cps at about 25° C. In an exemplary embodiment, a composition comprises: a plurality of diodes or other two-terminal integrated circuits; one or more solvents comprising about 15% to 99.9% of any of N-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, l-methoxy-2-propanol, N-octanol, ethanol, tetrahydrofurfuryl alcohol, cyclohexanol, and mixtures thereof; a viscosity modifier comprising about 0.10% to 2.5% methoxy propyl methylcellulose resin or hydroxy propyl methylcellulose resin or mixtures thereof; and about 0.01% to 2.5% of a plurality of substantially optically transparent and chemically inert particles having a range of sizes between about 10 to about 30 microns.
摘要翻译：二极管的液体或凝胶悬浮液的示例性可印刷组合物包含多个二极管，第一溶剂和/或粘度调节剂。在其他示例性实施方式中，还包括第二溶剂，并且该组合物在约25℃下的粘度基本上在约1,000cps和约25,000cps之间。在示例性实施方式中，组合物包含：多个二极管或其他双端集成电路; 一种或多种包含约15％至99.9％的任何N-丙醇，异丙醇，二丙二醇，二甘醇，丙二醇，1-甲氧基-2-丙醇，N-辛醇，乙醇，四氢糠醇，环己醇和其混合物的溶剂物; 包含约0.10％至2.5％甲氧基丙基甲基纤维素树脂或羟丙基甲基纤维素树脂或其混合物的粘度调节剂; 以及具有约10至约30微米的尺寸范围的多个基本光学透明和化学惰性颗粒的约0.01％至2.5％。

9. 发明申请

WO2008066999A3 DEVICES, METHODS, AND SYSTEMS WITH MOS-GATED TRENCH-TO-TRENCH LATERAL CURRENT FLOW 审中-公开
标题翻译：装置，方法和具有MOS栅极到栅极横向电流的系统
公开(公告)号：WO2008066999A3
公开(公告)日：2008-09-12
申请号：PCT/US2007078075
申请日：2007-09-10
申请人： BLANCHARD RICHARD A
发明人： BLANCHARD RICHARD A
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/7825 , H01L29/0696 , H01L29/41766 , H01L29/66704 , H01L29/66787
摘要： A DMOS transistor is fabricated with its source/body/deep body regions formed on the walls of a first set of trenches, and its drain regions formed on the walls of a different set of trenches. A gate region that is formed in a yet another set of trenches can be biased to allow carriers to flow from the source to the drain. Lateral current low from source/body regions on trench walls increases the active channel perimeter to a value well above the amount that would be present if the device was fabricated on just the surface of the wafer. Masking is avoided while open trenches are present. A transistor with a very low ort-resistance per unit area is obtained.
摘要翻译： DMOS晶体管的制作是在第一组沟槽的壁上形成其源/本体/深体区域，并将其漏极区域形成在不同组的沟槽的壁上。形成在又一组沟槽中的栅极区域可以被偏置以允许载流子从源极流到漏极。在沟槽壁上源/体区低的横向电流将活性沟道周长增加到远高于如果器件仅在晶片表面上制造时将出现的量的值。在开放的战壕存在时，避免掩蔽。获得每单位面积具有非常低的ort电阻的晶体管。

10. 发明申请

WO2006116517A3 APPARATUS AND METHOD FOR TRANSIENT BLOCKING EMPLOYING RELAYS 审中-公开
标题翻译：瞬态阻塞使用继电器的装置和方法
公开(公告)号：WO2006116517A3
公开(公告)日：2007-05-31
申请号：PCT/US2006015841
申请日：2006-04-25
申请人： FULTEC SEMICONDUCTOR INC , BLANCHARD RICHARD A , HARRIS RICHARD A , HEBERT FRANCOIS
发明人： BLANCHARD RICHARD A , HARRIS RICHARD A , HEBERT FRANCOIS
IPC分类号： H03K5/08
CPC分类号： H01J1/72 , C09K11/59 , H01H9/548 , H02H9/025
摘要： An apparatus and a method for uni-directional and bi-directional transient blocking. The uni-directional apparatus has a depletion mode n-channel device at its input and a normally closed relay, e.g., a micro-electro-mechanical (MEM) relay, interconnected with the depletion mode n-channel device and the input in such a way that at a predetermined current value the transient causes the normally closed relay to switch into an open state and produces a bias voltage V n on the depletion mode n-channel device that is sufficiently high to switch it "off" and thus block the transient. An analogous arrangement at the output taking advantage of the same or a second relay renders the apparatus bi-directional. The structure of the apparatus and the method of operation ensure a reliable and repeatable trip current I trip and render the apparatus very robust and feasible for low-cost manufacture.
摘要翻译：一种用于单向和双向瞬态阻塞的装置和方法。单向设备在其输入端具有耗尽模式n沟道器件和常闭继电器，例如与耗尽型n沟道器件互连的微机电（MEM）继电器，以及在这种在预定电流值下，瞬态使常闭继电器切换到打开状态，并且在耗尽型n沟道器件上产生足够高以切换它的偏置电压V n“ 关闭“，从而阻止瞬态。利用相同或第二中继器在输出端处的类似布置使设备双向。该装置的结构和操作方法确保了可靠且可重复的跳闸电流跳闸，并且使得该装置非常坚固且可用于低成本制造。

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