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    • 3. 发明申请
    • HOT WIRE CHEMICAL VAPOR DEPOSITION (CVD) INLINE COATING TOOL
    • 热线化学气相沉积(CVD)在线涂装工具
    • WO2011034751A2
    • 2011-03-24
    • PCT/US2010047972
    • 2010-09-07
    • APPLIED MATERIALS INCHAAS DIETERNARWANKAR PRAVIN KTHAKUR RANDHIR P S
    • HAAS DIETERNARWANKAR PRAVIN KTHAKUR RANDHIR P S
    • H01L21/205C23C16/54
    • C23C16/24C23C16/54H01L21/02532H01L21/0262
    • Methods and apparatus for hot wire chemical vapor deposition (HWCVD) are provided herein. In some embodiments, an inline HWCVD tool may include a linear conveyor for moving a substrate through the linear process tool; and a multiplicity of HWCVD sources, the multiplicity of HWCVD sources being positioned parallel to and spaced apart from the linear conveyor and configured to deposit material on the surface of the substrate as the substrate moves along the linear conveyor; wherein the substrate is coated by the multiplicity of HWCVD sources without breaking vacuum. In some embodiments, methods of coating substrates may include depositing a first material from an HWCVD source on a substrate moving through a first deposition chamber; moving the substrate from the first deposition chamber to a second deposition chamber; and depositing a second material from a second HWCVD source on the substrate moving through the second deposition chamber.
    • 本文提供了热线化学气相沉积(HWCVD)的方法和装置。 在一些实施例中,在线HWCVD工具可以包括用于通过线性处理工具移动衬底的线性输送机; 和多个HWCVD源,多个HWCVD源被定位成与线性传送器平行并与其间隔开,并且被配置为当衬底沿着线性传送器移动时将材料沉积在衬底的表面上; 其中所述衬底被多个HWCVD源涂覆而不破坏真空。 在一些实施例中,涂覆基底的方法可以包括在移动通过第一沉积室的基底上沉积来自HWCVD源的第一材料; 将衬底从第一沉积室移动到第二沉积室; 以及将第二材料从第二HWCVD源沉积在移动通过第二沉积室的衬底上。