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1. 发明申请

WO2012170129A2 SEMICONDUCTOR CONSTRUCTIONS HAVING THROUGH-SUBSTRATE INTERCONNECTS, AND METHODS OF FORMING THROUGH-SUBSTRATE INTERCONNECTS 审中-公开
标题翻译：具有通过基板互连的半导体结构及其形成通过基板互连的方法
公开(公告)号：WO2012170129A2
公开(公告)日：2012-12-13
申请号：PCT/US2012/036401
申请日：2012-05-03
申请人： MICRON TECHNOLOGY, INC. , WOOD, Alan, G. , IRELAND, Philip, J.
发明人： WOOD, Alan, G. , IRELAND, Philip, J.
IPC分类号： H01L21/28 , H01L21/768
CPC分类号： H01L23/5226 , H01L21/76898 , H01L23/481 , H01L23/5283 , H01L24/03 , H01L24/05 , H01L2224/03444 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0347 , H01L2224/0348 , H01L2224/03845 , H01L2224/05009 , H01L2224/05022 , H01L2224/05025 , H01L2224/05026 , H01L2224/05027 , H01L2224/05083 , H01L2224/05094 , H01L2224/05096 , H01L2224/05147 , H01L2224/05157 , H01L2224/05176 , H01L2224/05181 , H01L2224/05187 , H01L2224/05644 , H01L2224/05655 , H01L2924/04953 , H01L2924/0496 , H01L2924/01074 , H01L2924/04941
摘要： Some embodiments include methods of forming interconnects through semiconductor substrates. An opening may be formed to extend partway through a semiconductor substrate, and part of an interconnect may be formed within the opening. Another opening may be formed to extend from a second side of the substrate to the first part of the interconnect, and another part of the interconnect may be formed within such opening. Some embodiments include semiconductor constructions having a first part of a through-substrate interconnect extending partially through a semiconductor substrate from a first side of the substrate; and having a second part of the through-substrate interconnect extending from a second side of the substrate and having multiple separate electrically conductive fingers that all extend to the first part of the interconnect.
摘要翻译：一些实施例包括通过半导体衬底形成互连的方法。可以形成开口以在半导体衬底的中途延伸，并且可以在开口内形成一部分互连。另一个开口可以形成为从基板的第二侧延伸到互连的第一部分，并且互连的另一部分可以形成在该开口内。一些实施例包括半导体结构，其具有从衬底的第一侧部分延伸穿过半导体衬底的穿透衬底互连件的第一部分; 并且具有从所述衬底的第二侧延伸的所述贯通衬底互连件的第二部分，并且具有全部延伸到所述互连件的第一部分的多个分离的导电指状物。

2. 发明申请

WO2007092176A3 METHODS FOR FABRICATING AND FILLING CONDUCTIVE VIAS AND CONDUCTIVE VIAS SO FORMED 审中-公开
标题翻译：制备和填充导电性VIAS和导电性VIAS的方法
公开(公告)号：WO2007092176A3
公开(公告)日：2007-11-08
申请号：PCT/US2007002150
申请日：2007-01-26
申请人： MICRON TECHNOLOGY INC , AKRAM SALMAN , HIATT WILLIAM MARK , OLIVER STEVE , WOOD ALAN G , RIGG SIDNEY B , WARK JAMES M , KIRBY KYLE K
发明人： AKRAM SALMAN , HIATT WILLIAM MARK , OLIVER STEVE , WOOD ALAN G , RIGG SIDNEY B , WARK JAMES M , KIRBY KYLE K
IPC分类号： H01L21/768
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/05001 , H01L2224/05009 , H01L2224/05568 , H01L2224/13009 , H01L2224/13025 , H01L2224/16 , H01L2924/09701
摘要： Methods for forming conductive vias include forming one or more via holes in a substrate. The via holes may be formed with a single mask, with the protective layers, bond pads, or other features of the substrate acting as hard masks in the event that a photomask is removed during etching processes. The via holes may be configured to facilitate adhesion of a dielectric coating that includes a low-K dielectric material to the surfaces thereof. A barrier layer may be formed over surfaces of each via hole. A base layer, which may comprise a seed material, may be formed to facilitate the subsequent, selective deposition of conductive material over the surfaces of the via hole. The resulting semiconductor devices, intermediate structures, and assemblies and electronic devices that include the semiconductor devices that result from these methods are also disclosed.
摘要翻译：用于形成导电过孔的方法包括在衬底中形成一个或多个过孔。通孔可以用单个掩模形成，其中在蚀刻工艺期间去除光掩模的情况下，衬底的保护层，接合焊盘或其他特征充当硬掩模。通孔可以被配置为促进包括低K介电材料的介电涂层到其表面的粘附。可以在每个通孔的表面上形成阻挡层。可以包括种子材料的基底层可以形成为便于导电材料随后在通孔表面上的选择性沉积。也公开了由这些方法产生的所得半导体器件，中间结构，以及包括半导体器件的组件和电子器件。

3. 发明申请

WO2007092176A2 METHODS FOR FABRICATING AND FILLING CONDUCTIVE VIAS AND CONDUCTIVE VIAS SO FORMED 审中-公开
标题翻译：制造和填充导电VIAS和导电VIAS的方法
公开(公告)号：WO2007092176A2
公开(公告)日：2007-08-16
申请号：PCT/US2007/002150
申请日：2007-01-26
申请人： MICRON TECHNOLOGY, INC. , AKRAM, Salman , HIATT, William, Mark , OLIVER, Steve , WOOD, Alan, G. , RIGG, Sidney, B. , WARK, James, M. , KIRBY, Kyle, K.
发明人： AKRAM, Salman , HIATT, William, Mark , OLIVER, Steve , WOOD, Alan, G. , RIGG, Sidney, B. , WARK, James, M. , KIRBY, Kyle, K.
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/05001 , H01L2224/05009 , H01L2224/05568 , H01L2224/13009 , H01L2224/13025 , H01L2224/16 , H01L2224/16145 , H01L2224/17181 , H01L2924/09701
摘要： Methods for forming conductive vias include forming one or more via holes in a substrate. The via holes may be formed with a single mask, with the protective layers, bond pads, or other features of the substrate acting as hard masks in the event that a photomask is removed during etching processes. The via holes may be configured to facilitate adhesion of a dielectric coating that includes a low-K dielectric material to the surfaces thereof. A barrier layer may be formed over surfaces of each via hole. A base layer, which may comprise a seed material, may be formed to facilitate the subsequent, selective deposition of conductive material over the surfaces of the via hole. The resulting semiconductor devices, intermediate structures, and assemblies and electronic devices that include the semiconductor devices that result from these methods are also disclosed.
摘要翻译：用于形成导电通孔的方法包括在衬底中形成一个或多个通孔。通孔孔可以用单个掩模形成，在蚀刻过程中去除光掩模的情况下，保护层，接合焊盘或衬底的其它特征用作硬掩膜。通孔可以被配置为便于将包括低K电介质材料的电介质涂层粘附到其表面上。可以在每个通孔的表面上形成阻挡层。可以形成可以包括种子材料的基层，以便于导电材料随后的选择性沉积在通孔的表面上。还公开了包括由这些方法产生的半导体器件的所得半导体器件，中间结构和组件以及电子器件。

4. 发明申请

WO1997015836A1 TEMPORARY CONNECTION OF SEMICONDUCTOR DIE USING OPTICAL ALIGNMENT TECHNIQUES 审中-公开
标题翻译：使用光学对准技术的半导体器件的临时连接
公开(公告)号：WO1997015836A1
公开(公告)日：1997-05-01
申请号：PCT/US1995013708
申请日：1995-10-24
申请人： MICRON TECHNOLOGY, INC. , HEMBREE, David, R. , FARNWORTH, Warren, M. , WOOD, Alan, G.
发明人： MICRON TECHNOLOGY, INC.
IPC分类号： G01R31/28
CPC分类号： G01R31/2886 , G01R1/0483 , H01L2224/48091 , H01L2224/48227 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/00014
摘要： Optical alignment techniques, such as those used in "flip chip" bonding, are used to establish ohmic contact with die (24) by means of raised portions on contact members (20). This permits accurate alignment with a temporary die fixture (10) in order to test the die (24). The tested die (24) can then be qualified under a known good die program as having an acceptable degree of reliability. This permits the die (24) to be characterized prior to assembly, so that the die (24) may then be transferred in an unpackaged form. This ohmic contact is preferably established by applying a compression force to the die (24) using an interconnect insert (14) resulting in a limited penetration of the contact member (20) into the bondpads (22). The arrangement may be used for establishing electrical contact with a burn-in oven.
摘要翻译：使用诸如“倒装芯片”接合中使用的那些的光学对准技术通过接触构件（20）上的凸起部分与模具（24）建立欧姆接触。这允许与临时模具夹具（10）精确对准，以便测试模具（24）。然后，被测试的模具（24）可以在已知的良好的模具程序下被认证为具有可接受的可靠度。这允许在组装之前对模具（24）进行表征，使得模具（24）然后可以以未包装的形式传送。该欧姆接触优选通过使用互连插件（14）向模具（24）施加压缩力而导致接触构件（20）有限地穿透到粘结垫（22）中来建立。该装置可用于与老化烘箱建立电接触。

5. 发明申请

WO2006011897A1 PACKAGED MICROELECTRONIC IMAGERS AND METHODS OF PACKAGING MICROELECTRONIC IMAGERS 审中-公开
标题翻译：包装微电子图像和包装微电子图像的方法
公开(公告)号：WO2006011897A1
公开(公告)日：2006-02-02
申请号：PCT/US2004/037415
申请日：2004-11-09
申请人： MICRON TECHNOLOGY, INC. , AKRAM, Salman , WATKINS, Charles, M. , KIRBY, Kyle, K. , WOOD, Alan, G. , HIATT, William, M.
发明人： AKRAM, Salman , WATKINS, Charles, M. , KIRBY, Kyle, K. , WOOD, Alan, G. , HIATT, William, M.
IPC分类号： H01L27/146
CPC分类号： H01L27/146 , H01L21/76898 , H01L27/14618 , H01L27/148 , H01L31/02016 , H01L2224/48227 , H01L2924/01046 , H01L2924/01066 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/00
摘要： Microelectronic imagers, methods for packaging microelectronic imagers, and methods for forming electrically conductive through-wafer interconnects in microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging die can include a microelectronic substrate, an integrated circuit, and an image sensor electrically coupled to the integrated circuit. A bond-pad is carried by the substrate and electrically coupled to the integrated circuit. An electrically conductive through-wafer interconnect extends through the substrate and is in contact with the bond-pad. The interconnect can include a passage extending completely through the substrate and the bond-pad, a dielectric liner deposited into the passage and in contact with the substrate, first and second conductive layers deposited onto at least a portion of the dielectric liner, and a conductive fill material deposited into the passage over at least a portion of the second conductive layer and electrically coupled to the bond-pad.
摘要翻译：本文公开了微电子成像器，用于封装微电子成像器的方法，以及用于在微电子成像器中形成导电晶片间互连的方法。在一个实施例中，微电子成像管芯可以包括微电子衬底，集成电路和电耦合到集成电路的图像传感器。接合焊盘由衬底承载并电耦合到集成电路。导电晶片互连延伸穿过衬底并与接合焊盘接触。互连可以包括完全延伸穿过衬底和接合焊盘的通道，沉积到通道中并与衬底接触的电介质衬垫，沉积在电介质衬垫的至少一部分上的第一和第二导电层以及导电在第二导电层的至少一部分上沉积到通道中并且电耦合到接合焊盘的填充材料。

6. 发明申请

WO2007133302A2 SEMICONDUCTOR COMPONENTS AND SYSTEMS HAVING ENCAPSULATED THROUGH WIRE INTERCONNECTS (TWI) AND WAFER LEVEL METHODS OF FABRICATION 审中-公开
标题翻译：具有通过线互连（TWI）封装的半导体元件和系统以及制造水平的制造方法
公开(公告)号：WO2007133302A2
公开(公告)日：2007-11-22
申请号：PCT/US2007/002336
申请日：2007-01-29
申请人： MICRON TECHNOLOGY, INC. , HEMBREE, David, R. , WOOD, Alan, G.
发明人： HEMBREE, David, R. , WOOD, Alan, G.
IPC分类号： H01J17/49
CPC分类号： H01L24/16 , G01R1/06716 , G01R1/07307 , H01L21/486 , H01L21/565 , H01L21/568 , H01L21/76877 , H01L21/76885 , H01L21/76898 , H01L23/481 , H01L23/49827 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/78 , H01L24/81 , H01L24/85 , H01L25/0657 , H01L25/105 , H01L2224/02125 , H01L2224/0233 , H01L2224/02333 , H01L2224/02335 , H01L2224/02372 , H01L2224/02373 , H01L2224/02375 , H01L2224/0333 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05082 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05548 , H01L2224/05552 , H01L2224/05554 , H01L2224/05555 , H01L2224/05567 , H01L2224/05572 , H01L2224/05624 , H01L2224/05647 , H01L2224/06181 , H01L2224/1134 , H01L2224/13009 , H01L2224/13024 , H01L2224/13082 , H01L2224/131 , H01L2224/16146 , H01L2224/45014 , H01L2224/45015 , H01L2224/451 , H01L2224/45116 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45684 , H01L2224/45698 , H01L2224/48091 , H01L2224/4813 , H01L2224/48145 , H01L2224/48455 , H01L2224/48463 , H01L2224/4847 , H01L2224/48471 , H01L2224/48475 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/48824 , H01L2224/48847 , H01L2224/4899 , H01L2224/48992 , H01L2224/78301 , H01L2224/85051 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85951 , H01L2225/06506 , H01L2225/06527 , H01L2225/06541 , H01L2225/06562 , H01L2225/1058 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/07811 , H01L2924/10155 , H01L2924/10161 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/30105 , H01L2924/3011 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/45164 , H01L2924/013 , H01L2924/00013
摘要： A semiconductor component (10) includes a semiconductor substrate (12) having a substrate contact (20), and a through wire interconnect (TWI) (14) attached to the substrate contact (20). The through wire interconnect (14) provides a multi level interconnect having contacts (32, 48) on opposing first (17) and second (18) sides of the semiconductor substrate (12). The through wire interconnect (TWI) (14) includes a via (28) through the substrate contact (20) and the substrate (12), a wire (30) in the via (28) having a bonded connection (42) with the substrate contact (20), a first contact (32) on the wire proximate to the first side (17), and a second contact (46) on the wire (30) proximate to the second side (18). The through wire interconnect (TWI) (14) also includes a polymer layer (16) which partially encapsulates the through wire interconnect (TWI) (14) while leaving the first contact (32) exposed. The semiconductor component (10) can be used to fabricate stacked systems (54), module systems (74) and test systems (72). A method for fabricating the semiconductor component (10) can include a film assisted molding process for forming the polymer layer (16).
摘要翻译：半导体部件（10）包括具有衬底接触件（20）的半导体衬底（12）和连接到衬底接触件（20）的通孔互连（TWI）（14）。通线互连（14）提供在半导体衬底（12）的相对的第一（17）和第二（18）侧上具有触点（32,48）的多电平互连。通线互连（TWI）（14）包括穿过基板接触件（20）和基板（12）的通孔（28），通孔（28）中的导线（30）具有接合连接（42）基板触点（20），靠近第一侧（17）的导线上的第一触点（32）以及接近第二侧（18）的导线（30）上的第二触点（46）。通孔互连（TWI）（14）还包括聚合物层（16），其在使第一接触（32）暴露的同时部分地封装通孔互连（TWI）（14）。半导体部件（10）可用于制造堆叠系统（54），模块系统（74）和测试系统（72）。制造半导体部件（10）的方法可以包括用于形成聚合物层（16）的膜辅助成型工艺。

7. 发明申请

WO2007027881A3 MICROELECTRONIC IMAGING DEVICES AND ASSOCIATED METHODS FOR ATTACHING TRANSMISSIVE ELEMENTS 审中-公开
标题翻译：用于连接传输元件的微电子成像装置及相关方法
公开(公告)号：WO2007027881A3
公开(公告)日：2007-10-11
申请号：PCT/US2006034012
申请日：2006-08-31
申请人： MICRON TECHNOLOGY INC , FARNWORTH WARREN M , WOOD ALAN G
发明人： FARNWORTH WARREN M , WOOD ALAN G
IPC分类号： H01L27/146
CPC分类号： H01L27/14687 , H01L27/14618 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/14685 , H01L31/0232 , H01L2224/13
摘要： Microelectronic imaging devices and associated methods for attaching transmissive elements are disclosed. A manufacturing method in accordance with one embodiment of the invention includes providing an imager workpiece having multiple image sensor dies configured to detect energy over a target frequency. The image sensor dies can include an image sensor and a corresponding lens device positioned proximate to the image sensor. The method can further include positioning standoffs adjacent to the lens devices while the image sensor dies are connected to each other via the imager workpiece. At least one transmissive element can be attached to the workpiece at least proximate to the standoffs so the lens devices are positioned between the corresponding image sensors and the at least one transmissive element. Accordingly, the at least one transmissive element can protect the image sensors while the image sensor dies are still connected. In a subsequent process, the image sensor dies can be separated from each other.
摘要翻译：公开了用于附接透射元件的微电子成像装置和相关方法。根据本发明的一个实施例的制造方法包括提供具有多个图像传感器管芯的成像器工件，其配置成检测目标频率上的能量。图像传感器芯片可以包括图像传感器和位于图像传感器附近的对应的透镜装置。该方法还可以包括在图像传感器裸片经由成像器工件相互连接的同时定位与透镜装置相邻的支座。至少一个透射元件可以至少靠近支座附接到工件，使得透镜装置位于相应的图像传感器和至少一个透射元件之间。因此，至少一个透射元件可以在图像传感器管芯仍然连接的同时保护图像传感器。在随后的过程中，图像传感器管芯可以彼此分离。

8. 发明申请

WO2012170129A3 SEMICONDUCTOR CONSTRUCTIONS HAVING THROUGH-SUBSTRATE INTERCONNECTS, AND METHODS OF FORMING THROUGH-SUBSTRATE INTERCONNECTS 审中-公开
标题翻译：具有通过基板互连的半导体结构及其形成通过基板互连的方法
公开(公告)号：WO2012170129A3
公开(公告)日：2013-03-14
申请号：PCT/US2012036401
申请日：2012-05-03
申请人： MICRON TECHNOLOGY INC , WOOD ALAN G , IRELAND PHILIP J
发明人： WOOD ALAN G , IRELAND PHILIP J
IPC分类号： H01L21/28 , H01L21/768
CPC分类号： H01L23/5226 , H01L21/76898 , H01L23/481 , H01L23/5283 , H01L24/03 , H01L24/05 , H01L2224/03444 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0347 , H01L2224/0348 , H01L2224/03845 , H01L2224/05009 , H01L2224/05022 , H01L2224/05025 , H01L2224/05026 , H01L2224/05027 , H01L2224/05083 , H01L2224/05094 , H01L2224/05096 , H01L2224/05147 , H01L2224/05157 , H01L2224/05176 , H01L2224/05181 , H01L2224/05187 , H01L2224/05644 , H01L2224/05655 , H01L2924/04953 , H01L2924/0496 , H01L2924/01074 , H01L2924/04941
摘要： Some embodiments include methods of forming interconnects through semiconductor substrates. An opening may be formed to extend partway through a semiconductor substrate, and part of an interconnect may be formed within the opening. Another opening may be formed to extend from a second side of the substrate to the first part of the interconnect, and another part of the interconnect may be formed within such opening. Some embodiments include semiconductor constructions having a first part of a through-substrate interconnect extending partially through a semiconductor substrate from a first side of the substrate; and having a second part of the through-substrate interconnect extending from a second side of the substrate and having multiple separate electrically conductive fingers that all extend to the first part of the interconnect.
摘要翻译：一些实施例包括通过半导体衬底形成互连的方法。可以形成开口以在半导体衬底的中途延伸，并且可以在开口内形成一部分互连。另一个开口可以形成为从基板的第二侧延伸到互连的第一部分，并且互连的另一部分可以形成在该开口内。一些实施例包括半导体结构，其具有从衬底的第一侧部分延伸穿过半导体衬底的穿透衬底互连件的第一部分; 并且具有从所述衬底的第二侧延伸的所述贯通衬底互连件的第二部分，并且具有全部延伸到所述互连件的第一部分的多个分离的导电指状物。

9. 发明申请

WO2007133302A3 SEMICONDUCTOR COMPONENTS AND SYSTEMS HAVING ENCAPSULATED THROUGH WIRE INTERCONNECTS (TWI) AND WAFER LEVEL METHODS OF FABRICATION 审中-公开
标题翻译：具有通过线互连（TWI）封装的半导体元件和系统以及制造水平的制造方法
公开(公告)号：WO2007133302A3
公开(公告)日：2008-04-10
申请号：PCT/US2007002336
申请日：2007-01-29
申请人： MICRON TECHNOLOGY INC , HEMBREE DAVID R , WOOD ALAN G
发明人： HEMBREE DAVID R , WOOD ALAN G
IPC分类号： H01L29/40
CPC分类号： H01L24/16 , G01R1/06716 , G01R1/07307 , H01L21/486 , H01L21/565 , H01L21/568 , H01L21/76877 , H01L21/76885 , H01L21/76898 , H01L23/481 , H01L23/49827 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/78 , H01L24/81 , H01L24/85 , H01L25/0657 , H01L25/105 , H01L2224/02125 , H01L2224/0233 , H01L2224/02333 , H01L2224/02335 , H01L2224/02372 , H01L2224/02373 , H01L2224/02375 , H01L2224/0333 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05082 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05548 , H01L2224/05552 , H01L2224/05554 , H01L2224/05555 , H01L2224/05567 , H01L2224/05572 , H01L2224/05624 , H01L2224/05647 , H01L2224/06181 , H01L2224/1134 , H01L2224/13009 , H01L2224/13024 , H01L2224/13082 , H01L2224/131 , H01L2224/16146 , H01L2224/45014 , H01L2224/45015 , H01L2224/451 , H01L2224/45116 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45684 , H01L2224/45698 , H01L2224/48091 , H01L2224/4813 , H01L2224/48145 , H01L2224/48455 , H01L2224/48463 , H01L2224/4847 , H01L2224/48471 , H01L2224/48475 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/48824 , H01L2224/48847 , H01L2224/4899 , H01L2224/48992 , H01L2224/78301 , H01L2224/85051 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85951 , H01L2225/06506 , H01L2225/06527 , H01L2225/06541 , H01L2225/06562 , H01L2225/1058 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/07811 , H01L2924/10155 , H01L2924/10161 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/30105 , H01L2924/3011 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/45164 , H01L2924/013 , H01L2924/00013
摘要： A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) attached to the substrate contact The through wire interconnect provides a multi level interconnect having contacts on opposing first and second sides of the semiconductor substrate The through wire interconnect includes a via through the substrate contact and the substrate, a wire in the via having a bonded connection with the substrate contact, a first contact on the wire proximate to the first side, and a second contact on the wire proximate to the second side The through wire interconnect also includes a polymer layer which partially encapsulates the through wire interconnect while leaving the first contact exposed The semiconductor component can be used to fabricate stacked systems module systems and test systems A method for fabricating the semiconductor component can include a film assisted molding process for forming the polymer layer.
摘要翻译：半导体部件包括具有衬底接触的半导体衬底和附着到衬底触点的通线互连（TWI）。通线互连提供了在半导体衬底的相对的第一和第二侧上具有触点的多电平互连。通线互连包括通过基板触点和基板的通孔，通孔中的导线与基板触点具有接合连接，靠近第一侧的导线上的第一触点和靠近第二侧的导线上的第二触点通过导线互连还包括聚合物层，其部分地封装通孔互连，同时使第一接触露出。半导体部件可用于制造堆叠系统模块系统和测试系统。制造半导体部件的方法可以包括膜辅助成型工艺用于形成聚合物层。

10. 发明申请

WO2007027881A2 MICROELECTRONIC IMAGING DEVICES AND ASSOCIATED METHODS FOR ATTACHING TRANSMISSIVE ELEMENTS 审中-公开
标题翻译：微电子成像装置和用于安装传输元件的相关方法
公开(公告)号：WO2007027881A2
公开(公告)日：2007-03-08
申请号：PCT/US2006/034012
申请日：2006-08-31
申请人： MICRON TECHNOLOGY, INC. , FARNWORTH, Warren, M. , WOOD, Alan, G.
发明人： FARNWORTH, Warren, M. , WOOD, Alan, G.
IPC分类号： H01L27/146
CPC分类号： H01L27/14687 , H01L27/14618 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/14685 , H01L31/0232 , H01L2224/13
摘要： Microelectronic imaging devices and associated methods for attaching transmissive elements are disclosed. A manufacturing method in accordance with one embodiment of the invention includes providing an imager workpiece having multiple image sensor dies configured to detect energy over a target frequency. The image sensor dies can include an image sensor and a corresponding lens device positioned proximate to the image sensor. The method can further include positioning standoffs adjacent to the lens devices while the image sensor dies are connected to each other via the imager workpiece. At least one transmissive element can be attached to the workpiece at least proximate to the standoffs so the lens devices are positioned between the corresponding image sensors and the at least one transmissive element. Accordingly, the at least one transmissive element can protect the image sensors while the image sensor dies are still connected. In a subsequent process, the image sensor dies can be separated from each other.
摘要翻译：公开了用于附接透射元件的微电子成像装置和相关方法。根据本发明的一个实施例的制造方法包括提供具有多个图像传感器管芯的成像器工件，所述多个图像传感器管芯被配置为检测目标频率上的能量。图像传感器管芯可以包括图像传感器和位于图像传感器附近的相应的透镜装置。该方法可以进一步包括在镜头装置附近定位支架，同时图像传感器芯片通过成像器工件彼此连接。至少一个透射元件可以至少靠近支座附接到工件，使得透镜装置位于对应的图像传感器和至少一个透射元件之间。因此，至少一个透射元件可以在图像传感器管芯仍然连接时保护图像传感器。在随后的过程中，图像传感器芯片可以彼此分离。

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