专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2008042691A3 PROCESSING SYSTEM CONTAINING A HOT FILAMENT HYDROGEN RADICAL SOURCE FOR INTEGRATED SUBSTRATE PROCESSING 审中-公开
标题翻译：含有热丝氢源的加工系统用于集成衬底加工
公开(公告)号：WO2008042691A3
公开(公告)日：2008-05-22
申请号：PCT/US2007079667
申请日：2007-09-27
申请人： TOKYO ELECTRON LTD , TOKYO ELECTRON AMERICA INC , MATSUDA TSUKASA , SAKURAGI ISAMU
发明人： MATSUDA TSUKASA , SAKURAGI ISAMU
IPC分类号： C23C16/02 , C23C16/04 , C23C16/18 , C23C16/452 , C23C16/455 , C23C16/56
CPC分类号： C23C16/0236 , C23C16/045 , C23C16/18 , C23C16/452 , C23C16/45565 , C23C16/56
摘要： A processing system (1, 504B) and method for integrated substrate processing in a substrate processing tool (500). The processing system (1, 504B) contains a substrate holder (20) configured for supporting and controlling the temperature of the substrate (25), a hot filament hydrogen radical source (31 ) for generating hydrogen radicals, and a controller (70, 510) configured for controlling the processing system (1, 504B). The hot filament hydrogen radical source (31 ) includes a showerhead assembly (30) containing an internal volume (37) and a showerhead plate (35) having gas passages (33) facing the substrate (25) for exposing the substrate (25) to the hydrogen radicals, and at least one meta! wire filament (59, 59a, 59b, 59c) within the interna! volume (37) to thermaliy dissociate H2 gas into the hydrogen radicals. The integrated process includes pretreating exposed surfaces of an etch feature (105) in a dielectric film (113, 115, 624, 626) and an exposed metal interconnect pattern (111 A, 622A) formed underneath the etch feature (105) with a flow of hydrogen radicals generated by thermal decomposition of H2 gas by a hot filament hydrogen radical source (31 ) separated from the substrate (25) by a showerhead plate (35) containing gas passages (33) facing the substrate (25). The integrated process further includes depositing a barrier metal film (116, 628) over the pretreated exposed surfaces, and forming a Cu metal film (113) on the barrier metal film (116, 628).
摘要翻译：一种用于衬底处理工具（500）中的集成衬底处理的处理系统（504B）和方法。处理系统（504B）包含被配置用于支撑和控制衬底（25）的温度的衬底保持器（20），用于产生氢自由基的热丝氢自由基源（31）以及控制器（70,510 ），被配置用于控制处理系统（1，504B）。热灯丝氢根源（31）包括含有内部容积（37）的喷头组件（30）和具有面向基片（25）的气体通道（33）的喷头板（35），用于将基片（25）暴露于氢自由基和至少一个元！内部线丝（59,59a，59b，59c）体积（37）将H 2气体热分解成氢自由基。该集成工艺包括在电介质膜（113,115,624,626）和在蚀刻特征（105）下方形成的暴露的金属互连图案（111A，622A）中利用流预处理蚀刻特征（105）的暴露表面由通过含有面对基板（25）的气体通道（33）的喷头板（35）与基板（25）分离的热灯丝氢自由基源（31）通过H 2气体的热分解产生的氢自由基。该集成工艺还包括在预处理的暴露表面上沉积阻挡金属膜（116,628），并且在阻挡金属膜（116,628）上形成Cu金属膜（113）。

2. 发明申请

WO2006104647A3 METHOD AND SYSTEM FOR FORMING AVARIABLE THICKNESS SEED LAYER 审中-公开
标题翻译：用于形成可变厚度种子层的方法和系统
公开(公告)号：WO2006104647A3
公开(公告)日：2006-11-16
申请号：PCT/US2006008112
申请日：2006-03-07
申请人： TOKYO ELECTRON LTD , TOKYO ELECTRON AMERICA INC , MATSUDA TSUKASA
发明人： MATSUDA TSUKASA
IPC分类号： C23C16/455
CPC分类号： C23C16/18 , C23C16/16 , H01L21/28556 , H01L21/76868 , H01L21/76873
摘要： A method and system (1 ) for forming a variable thickness seed layer (102, 116) on a substrate (25, 100, 110) for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of the electroplated metal layer compared to when using a constant thickness seed layer. The method includes providing a substrate (25, 100, 110) in a process chamber (10) containing a showerhead (30), with the center (106, 122) of the substrate (25, 100, 110) generally aligned with an inner gas delivery zone (32) of the showerhead (30) and the edge (104, 120) of the substrate (25, 100, 110) generally aligned with an outer gas delivery zone (34) of the showerhead (30). The method further includes depositing a seed layer (102, 116) on the substrate (25, 100, 110) by exposing the substrate (25, 100, 110) to a first gas containing a metal-containing precursor flowed through the inner gas delivery zone (32), and exposing the substrate (25, 100, 110) to a second gas flowed through the outer gas delivery zone (34), whereby the seed layer (102, 116) is deposited with a thickness at the edge (104, 120) of the substrate (25, 100, 110) that is less than the thickness at the center (106, 122) of the substrate (25, 100, 110).
摘要翻译：一种用于在随后的金属电化学电镀工艺中在衬底（25,100,110）上形成可变厚度晶种层（102,116）的方法和系统（1），其中晶种层厚度分布改善了电镀金属层与使用恒定厚度种子层时相比。该方法包括在包含喷头（30）的处理室（10）中提供衬底（25,100,110），衬底（25,100,110）的中心（106,122）大致与衬底（30）的气体输送区域（32）和基板（25,100,110）的边缘（104,120）大致与喷头（30）的外部气体输送区域（34）对齐。该方法进一步包括通过将衬底（25,100,110）暴露于含有流经内部气体输送装置的含金属前体的第一气体而在衬底（25,100,110）上沉积种子层（102,116）（32），并且将所述衬底（25,100,110）暴露于流经所述外部气体输送区域（34）的第二气体，由此所述籽晶层（102,116）在所述边缘（104）（25,100,110）的中心（106,122）处的厚度小于所述衬底（25,100,110）的厚度。

3. 发明申请

WO2006101856A2 A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM AND METHOD 审中-公开
标题翻译：等离子体增强原子层沉积系统和方法
公开(公告)号：WO2006101856A2
公开(公告)日：2006-09-28
申请号：PCT/US2006/009188
申请日：2006-03-15
申请人： TOKYO ELECTRON LIMITED , MATSUDA, Tsukasa
发明人： MATSUDA, Tsukasa
IPC分类号： H01L21/20
CPC分类号： C23C16/45544 , C23C16/4554 , C23C16/515 , H01J37/32009 , H01J37/32532 , H01L21/28562
摘要： A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Also included is coupling electromagnetic power to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate. A reactive gas is introduced within the process chamber, the reactive gas chemically reacting with contaminants in the process chamber to release the contaminants from at least one of a process chamber component or the substrate.
摘要翻译：使用等离子体增强原子层沉积（PEALD）工艺在衬底上沉积膜的方法包括将衬底布置在处理室中，该处理室被配置为便于PEALD工艺，在处理室内引入第一工艺材料并引入第二工艺材料在处理室内。还包括在引入第二工艺材料期间将电磁功率耦合到处理室，以便产生促进第一和第二工艺材料在衬底表面处的还原反应的等离子体。反应性气体被引入处理室内，反应气体与处理室中的污染物质化学反应以从处理室组件或衬底中的至少一个释放污染物。

4. 发明申请

WO2005033357A3 LOW-PRESSURE DEPOSITION OF METAL LAYERS FROM METAL-CARBONYL PRECURSORS 审中-公开
标题翻译：来自金属碳前驱体的金属层的低压沉积
公开(公告)号：WO2005033357A3
公开(公告)日：2005-06-23
申请号：PCT/US2004028894
申请日：2004-09-07
申请人： TOKYO ELECTRON LTD , IBM , YAMASAKI HIDEAKI , MATSUDA TSUKASA , GOMI ATSUSHI , HATANO TATSUO , SUGIURA MASAHITO , KAWANO YUMIKO , LEUSINK GERT J , MCFEELY FENTON R , MALHOTRA SANDRA G
发明人： YAMASAKI HIDEAKI , MATSUDA TSUKASA , GOMI ATSUSHI , HATANO TATSUO , SUGIURA MASAHITO , KAWANO YUMIKO , LEUSINK GERT J , MCFEELY FENTON R , MALHOTRA SANDRA G
IPC分类号： C23C16/16 , C23C16/44 , H01L21/285 , C23C16/455
CPC分类号： C23C16/16 , H01L21/28556
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500 C, by utilizing a residence time less than about 120 msec.
摘要翻译：通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。在本发明的一个实施方案中，金属羰基前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12，Re 2 （CO）10，Cr（CO）6和Ru 3（CO）12前体）。在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。

5. 发明申请

WO2005034224A1 METHOD OF FORMING A METAL LAYER USING AN INTERMITTENT PRECURSOR GAS FLOW PROCESS 审中-公开
标题翻译：使用间歇前体气体流动法形成金属层的方法
公开(公告)号：WO2005034224A1
公开(公告)日：2005-04-14
申请号：PCT/US2004/028893
申请日：2004-09-07
申请人： TOKYO ELECTRON LIMITED , INTERNATIONAL BUSINESS MACHINES CORPORATION , YAMASAKI, Hideaki , MATSUDA, Tsukasa , GOMI, Atsushi , HATANO, Tatsuo , TACHIBANA, Mitsuhiro , MATSUZAVA, Koumei , KAWANO, Yumiko , LEUSINK, Gert, J. , MCFEELY, Fenton, R. , MALHOTRA, Sandra, G. , SIMON, Andrew, H. , YURKAS, John, J.
发明人： YAMASAKI, Hideaki , MATSUDA, Tsukasa , GOMI, Atsushi , HATANO, Tatsuo , TACHIBANA, Mitsuhiro , MATSUZAVA, Koumei , KAWANO, Yumiko , LEUSINK, Gert, J. , MCFEELY, Fenton, R. , MALHOTRA, Sandra, G. , SIMON, Andrew, H. , YURKAS, John, J.
IPC分类号： H01L21/285
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/16 , C23C16/4408 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.
摘要翻译：提供了一种使用间歇式前体气体流动方法在基板上形成金属层的方法。该方法包括将衬底暴露于还原气体，同时将衬底暴露于羰基金属前体气体的脉冲。进行该过程，直到在基底上形成具有所需厚度的金属层。金属层可以形成在基板上，或者可以在金属成核层上形成金属层。

6. 发明申请

WO2006101646A1 METHOD FOR FORMING A RUTHENIUM METAL LAYER ON A PATTERNED SUBSTRATE 审中-公开
标题翻译：在图案基板上形成金属层的方法
公开(公告)号：WO2006101646A1
公开(公告)日：2006-09-28
申请号：PCT/US2006/006031
申请日：2006-02-21
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , MATSUDA, Tsukasa
发明人： MATSUDA, Tsukasa
IPC分类号： H01L21/768 , H01L23/532 , C23C16/18 , C23C16/02 , C23C16/455
CPC分类号： H01L21/28556 , C23C16/18 , C23C16/4481 , C23C16/45542 , C23C16/52 , H01L21/28562 , H01L21/76846 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method (300) for forming a ruthenium metal layer (560) includes providing a patterned substrate (25, 125, 500) in a process chamber (10, 110) of a deposition system(1, 100), where the patterned substrate (25, 125, 500) contains one or more vias or trenches, or combinations thereof, depositing a first ruthenium metal layer (540) on the substrate (25, 125, 500) in an atomic layer deposition process, and depositing a second ruthenium metal layer (550) on the first ruthenium metal layer (540) in a thermal chemical vapor deposition process. The deposited ruthenium metal layer (560) can be used as a diffusion barrier layer, a seed layer for electroplating, or both.
摘要翻译：用于形成钌金属层（560）的方法（300）包括在沉积系统（1,100）的处理室（10,110）中提供图案化衬底（25,125,500），其中所述图案化衬底 25，125，500）包含一个或多个通孔或沟槽或其组合，在原子层沉积工艺中在衬底（25,125,500）上沉积第一钌金属层（540），并沉积第二钌金属层（550）在热化学气相沉积工艺中的第一钌金属层（540）上。沉积的钌金属层（560）可以用作扩散阻挡层，用于电镀的种子层或两者。

7. 发明申请

WO2005034222A1 METHOD FOR DEPOSITING METAL LAYERS USING SEQUENTIAL FLOW DEPOSITION 审中-公开
标题翻译：使用顺序流沉积沉积金属层的方法
公开(公告)号：WO2005034222A1
公开(公告)日：2005-04-14
申请号：PCT/US2004/028891
申请日：2004-09-07
申请人： TOKYO ELECTRON LIMITED , INTERNATIONAL BUSINESS MACHINES CORPORATION , MATSUDA, Tsukasa , IKEDA, Taro , HATANO, Tatsuo , TACHIBANA, Mitsuhiro , YAMASAKI, Hideaki , LEUSINK, Gert, J. , MCFEELY, Fenton, R. , MALHOTRA, Sandra, G. , SIMON, Andrew, H. , YURKAS, John, J.
发明人： MATSUDA, Tsukasa , IKEDA, Taro , HATANO, Tatsuo , TACHIBANA, Mitsuhiro , YAMASAKI, Hideaki , LEUSINK, Gert, J. , MCFEELY, Fenton, R. , MALHOTRA, Sandra, G. , SIMON, Andrew, H. , YURKAS, John, J.
IPC分类号： H01L21/285
CPC分类号： C23C16/4408 , C23C16/16 , C23C16/45523 , H01L21/28562
摘要： A method for depositing metal layers with good surface morphology using sequential flow deposition includes alternately exposing a substrate in a process chamber to a metal-carbonyl precursor gas and a reducing gas. During exposure with the metal-carbonyl precursor gas, a thin metal layer is deposited on the substrate by thermal decomposition, and subsequent exposure of the metal layer to the reducing gas aids in the removal of reaction by-products from the metal layer. The metal-carbonyl precursor gas and a reducing gas exposure steps can be repeated until a metal layer with a desired thickness is achieved. The metalcarbonyl precursor can, for example, be selected from W(CO) 6 , Ni(CO) 4 , MO(CO) 6 , C0 2 (CO) 8 , Rh 4 (CO) 12 , Re 2 (CO) 10 , Cr(CO) 6 , and Ru 3 (CO) 12 .
摘要翻译：使用顺序流动沉积沉积具有良好表面形态的金属层的方法包括将处理室中的衬底交替地暴露于羰基金属前体气体和还原气体。在用羰基金属前驱体气体曝光的同时，通过热分解在基板上沉积薄金属层，随后将金属层暴露于还原气体有助于从金属层除去反应副产物。可以重复金属羰基前体气体和还原气体暴露步骤，直到达到具有所需厚度的金属层。金属羰基前体可以例如选自W（CO）6，Ni（CO）4，MO（CO）6，CO 2（CO）8，Rh 4（CO）12，Re 2（CO）10，Cr ）6和Ru 3（CO）12。

8. 发明申请

WO2008042691A2 PROCESSING SYSTEM CONTAINING A HOT FILAMENT HYDROGEN RADICAL SOURCE FOR INTEGRATED SUBSTRATE PROCESSING 审中-公开
标题翻译：含有热液体氢源的加工系统，用于集成基板加工
公开(公告)号：WO2008042691A2
公开(公告)日：2008-04-10
申请号：PCT/US2007/079667
申请日：2007-09-27
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , MATSUDA, Tsukasa , SAKURAGI, Isamu
发明人： MATSUDA, Tsukasa , SAKURAGI, Isamu
IPC分类号： C23C16/02 , C23C16/452 , C23C16/455 , C23C16/04 , C23C16/18 , C23C16/56
CPC分类号： C23C16/0236 , C23C16/045 , C23C16/18 , C23C16/452 , C23C16/45565 , C23C16/56
摘要： A processing system (1, 504B) and method for integrated substrate processing in a substrate processing tool (500). The processing system (1, 504B) contains a substrate holder (20) configured for supporting and controlling the temperature of the substrate (25), a hot filament hydrogen radical source (31 ) for generating hydrogen radicals, and a controller (70, 510) configured for controlling the processing system (1, 504B). The hot filament hydrogen radical source (31 ) includes a showerhead assembly (30) containing an internal volume (37) and a showerhead plate (35) having gas passages (33) facing the substrate (25) for exposing the substrate (25) to the hydrogen radicals, and at least one meta! wire filament (59, 59a, 59b, 59c) within the interna! volume (37) to thermaliy dissociate H2 gas into the hydrogen radicals. The integrated process includes pretreating exposed surfaces of an etch feature (105) in a dielectric film (113, 115, 624, 626) and an exposed metal interconnect pattern (111 A, 622A) formed underneath the etch feature (105) with a flow of hydrogen radicals generated by thermal decomposition of H2 gas by a hot filament hydrogen radical source (31 ) separated from the substrate (25) by a showerhead plate (35) containing gas passages (33) facing the substrate (25). The integrated process further includes depositing a barrier metal film (116, 628) over the pretreated exposed surfaces, and forming a Cu metal film (113) on the barrier metal film (116, 628).
摘要翻译：一种用于衬底处理工具（500）中的集成衬底处理的处理系统（1,504B）和方法。处理系统（1,504B）包括：衬底保持器（20），其构造成用于支撑和控制衬底（25）的温度，用于产生氢自由基的热丝氢自由基源（31）;以及控制器）配置用于控制处理系统（1,504B）。热丝氢自由基源（31）包括含有内部体积（37）和喷头板（35）的喷头组件（30），喷头板（35）具有面向衬底（25）的气体通道（33），用于将衬底（25）暴露于氢自由基和至少一个元素内部的丝线（59,59a，59b，59c）体积（37）以将H2气体热分解成氢自由基。整合过程包括在介电膜（113,115,624,626）中预处理蚀刻特征（105）的暴露表面，以及形成在蚀刻特征（105）下方的暴露的金属互连图案（111A，622A）由通过包含面向衬底（25）的气体通道（33）的喷头板（35）与基底（25）分离的热丝氢自由基源（31）由H2气体的热分解产生的氢自由基。整合过程还包括在预处理的暴露表面上沉积阻挡金属膜（116,628），以及在阻挡金属膜（116,628）上形成Cu金属膜（113）。

9. 发明申请

WO2006104863A3 A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM 审中-公开
公开(公告)号：WO2006104863A3
公开(公告)日：2006-10-05
申请号：PCT/US2006/010682
申请日：2006-03-22
申请人： TOKYO ELECTRON LIMITED , ISHIZAKA, Tadahiro , MATSUDA, Tsukasa , CERIO, Jr., FrankM. , YAMAMOTO, Kaoru
发明人： ISHIZAKA, Tadahiro , MATSUDA, Tsukasa , CERIO, Jr., FrankM. , YAMAMOTO, Kaoru
IPC分类号： C23F1/00 , C23C16/00 , H01J9/00
摘要： A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by altematingly introducing the first process material and the second process material.

10. 发明申请

WO2006104863A2 A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM 审中-公开
标题翻译：等离子体增强原子层沉积系统
公开(公告)号：WO2006104863A2
公开(公告)日：2006-10-05
申请号：PCT/US2006010682
申请日：2006-03-22
申请人： TOKYO ELECTRON LTD , ISHIZAKA TADAHIRO , MATSUDA TSUKASA , CERIO JR FRANKM , YAMAMOTO KAORU
发明人： ISHIZAKA TADAHIRO , MATSUDA TSUKASA , CERIO JR FRANKM , YAMAMOTO KAORU
IPC分类号： C23C16/00
CPC分类号： C23C16/4409 , C23C16/4404 , C23C16/4412 , C23C16/45542 , C23C16/45544 , C23C16/5096
摘要： A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by altematingly introducing the first process material and the second process material.
摘要翻译：等离子体增强原子层沉积（PEALD）系统包括耦合到第二室部件的第一室部件，以提供限定处理室内的隔离处理空间的处理室。衬底保持器设置在处理室内并且被配置为支撑衬底，第一处理材料供应系统被配置为将第一处理材料供应到处理室，第二处理材料供应系统被配置为将第二处理材料供应到处理室。电源被配置为将电磁功率耦合到处理室，以及插入在第一和第二室部件之间的密封组件。密封组件包括多个密封构件，其被配置为将渗透通过第一和第二部件的界面的外部污染物的量减少到处理室的隔离处理空间中，其中通过替代地将第一工艺材料和第二工艺材料。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式