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1. 发明申请

WO2022090518A1 POWDER COATING METHOD 审中-公开
公开(公告)号：WO2022090518A1
公开(公告)日：2022-05-05
申请号：PCT/EP2021/080217
申请日：2021-10-29
申请人： PARTIX
发明人： SCHELTJENS, Gill , HEYBERGER, Régis , JACOBS, Marc , PESCOD, Russel , VAN DER GUCHT, Filip
IPC分类号： C23C16/513 , C23C16/44 , C23C16/442 , B05D1/00 , C23C16/452 , H05H1/46 , C23C16/455 , B01J2/00
摘要： The present invention relates to a plasma coating method for coating particulate matter, comprising the steps of: a) providing a low-temperature atmospheric plasma jet from a plasma gas outside of the reaction chamber; b) inserting a precursor into the plasma jet, thereby obtaining a plasma coating flow comprising an excited precursor, followed by injecting the plasma coating flow comprising the excited precursor in the reaction chamber, and c) subjecting particulate matter to said plasma coating flow comprising said excited precursor, thereby obtaining particulate matter comprising an at least partial coating. The present invention also relates to a coating reactor apparatus and a system.

2. 发明申请

WO2022022188A1 原料气化装置和镀膜装置以及镀膜设备及其进料方法审中-公开
公开(公告)号：WO2022022188A1
公开(公告)日：2022-02-03
申请号：PCT/CN2021/102447
申请日：2021-06-25
申请人：江苏菲沃泰纳米科技股份有限公司
发明人：宗坚
IPC分类号： C23C16/448 , C23C16/452 , C23C16/513 , C23C16/455
摘要：本发明公开一原料气化装置和镀膜设备及其气化方法，其中所述原料气化装置，其包括：一第一级气化部件，所述第一级气化部件用于将送入的原料进行初级气化；一第二级气化部件，所述第二级气化部件用于将第一级气化部件初级气化后的原料进一步气化；和一进料控制部，其中所述进料控制部用于送入需要被气化的原料，所述进料控制部控制地连通所述第一级气化部件，由此提高原料的气化效率。

3. 发明申请

WO2021250477A1 ROLL-TO-ROLL VAPOR DEPOSITION APPARATUS AND METHOD 审中-公开
公开(公告)号：WO2021250477A1
公开(公告)日：2021-12-16
申请号：PCT/IB2021/053759
申请日：2021-05-04
申请人： 3M INNOVATIVE PROPERTIES COMPANY
发明人： BEDOYA, Cedric , PIETZ, Brandon R. , SVEBACK, Tarris A. , SPAGNOLA, Joseph C.
IPC分类号： C23C16/452 , C23C16/455 , C23C16/54 , C23C16/45536 , C23C16/45551 , C23C16/545
摘要： A system. The system may include a first zone into which a first precursor is introduced; a second zone into which a second precursor is introduced; a third zone between the first zone and the second zone and in which a reactive species is generated; a fourth zone between the first zone and the third zone; a fifth zone between the second zone and the third zone; wherein a process gas is introduced into the fourth zone and the fifth zone; wherein the reactive species and the first precursor is mixed in the fourth zone and the reactive species and the second precursor is mixed in the fifth zone; and a substrate transport mechanism.

4. 发明申请

WO2021150391A1 ELECTRONIC DEVICES COMPRISING SILICON CARBIDE MATERIALS AND RELATED METHODS AND SYSTEMS 审中-公开
公开(公告)号：WO2021150391A1
公开(公告)日：2021-07-29
申请号：PCT/US2021/012943
申请日：2021-01-11
申请人： MICRON TECHNOLOGY, INC.
发明人： SARKAR, Santanu , GOOD, Farrell M.
IPC分类号： H01L45/00 , H01L27/24 , C23C16/045 , C23C16/452 , H01L21/02167 , H01L21/02274 , H01L21/02381 , H01L2221/1047
摘要： An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

5. 发明申请

WO2021090793A1 ＤＬＣ膜の成膜装置及び成膜方法审中-公开
公开(公告)号：WO2021090793A1
公开(公告)日：2021-05-14
申请号：PCT/JP2020/041015
申请日：2020-11-02
申请人：株式会社クリエイティブコーティングス
发明人：佐藤　英児 , 坂本　仁志
IPC分类号： C23C16/27 , C23C16/452 , H01L21/205 , H01L21/316
摘要：成膜装置（１０）は、反応容器（２０）と、反応容器内で成膜対象（１）を支持する支持部（６０）と、支持部を回転させる回転部（７０）と、炭化水素を含む原料ガスを、第１バルブ（１３０）を介して反応容器に供給する第１供給管（１００）と、原料ガスが充満されている反応容器内に、誘導結合プラズマにより活性化された水素ラジカルを含む反応ガスを、反応容器内の圧力よりも高い圧力で、第２バルブ（２３０）を介して反応容器に供給する第２供給管（２００）と、支持部を介して成膜対象に負バイアスを印加するＤＣ電源（８０）と、を有し、原料ガスと反応ガスとの反応により生成される炭素イオンを負バイアスにより成膜対象に引き寄せて、成膜対象にＤＬＣ膜を堆積させる。

6. 发明申请

WO2020023385A1 CONFORMAL DEPOSITION OF SILICON CARBIDE FILMS USING HETEROGENEOUS PRECURSOR INTERACTION 审中-公开
公开(公告)号：WO2020023385A1
公开(公告)日：2020-01-30
申请号：PCT/US2019/042821
申请日：2019-07-22
申请人： LAM RESEARCH CORPORATION
发明人： WEIMER, Matthew Scott , VARADARAJAN, Bhadri N. , GONG, Bo , GUI, Zhe
IPC分类号： C23C16/32 , C23C16/452 , C23C16/505 , H01L21/02 , H01L21/768
摘要： A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant can be a depositing additive or a non-depositing additive to increase step coverage of the silicon carbide film.

7. 发明申请

WO2019132333A1 초저철손 방향성 전기강판 제조방법 审中-公开
公开(公告)号：WO2019132333A1
公开(公告)日：2019-07-04
申请号：PCT/KR2018/015801
申请日：2018-12-13
申请人： 주식회사 포스코
发明人： 이상원 , 권민석 , 배진수
IPC分类号： C23C16/40 , C21D8/12 , C21D9/46 , C23C16/505 , C23C16/56 , C23C16/452 , C23C16/02
CPC分类号： C21D8/12 , C21D9/46 , C23C16/02 , C23C16/40 , C23C16/452 , C23C16/505 , C23C16/56
摘要： 초저철손 방향성 전기강판 제조방법이 제공된다. 본 발명의 방향성 전기강판 제조방법은, 강 슬라브를 재가열, 열간압연, 열연판 소둔, 냉간압연, 1차 재결정 소둔 및 2차 재결정 소둔하는 공정을 포함하는 방향성 전기강판 제조방법에 있어서, 상기 1차 재결정 소둔처리된 강판의 일면 또는 양면의 일부 또는 전부에, 상압 플라즈마 CVD공정(APP-CVD)을 이용하여 플라즈마 상태에서 기상의 세라믹 전구체를 접촉 반응시킴으로써 세라믹코팅층을 형성한 후 2차 재결정소둔한다.

8. 发明申请

WO2019088371A1 개시제를 이용한 화학 기상 증착법을 통한 고분자 감압 접착제의 제조방법 审中-公开
公开(公告)号：WO2019088371A1
公开(公告)日：2019-05-09
申请号：PCT/KR2018/001921
申请日：2018-02-14
申请人： 한국과학기술원
发明人： 임성갑 , 주문규 , 곽무진 , 문희연
IPC分类号： C09J7/38 , C23C16/452
摘要： 본 발명은 개시제를 이용한 화학 기상 증착법(iCVD, initiated chemical vapor deposition)을 통하여 친핵체 단량체와 친전자체 단량체 및 개시제를 연쇄 중합 반응 시켜 얇은 두께에서도 다양한 기재에 대한 우수한 접착력 및 다양한 조건에서의 우수한 저항성을 가지는 고분자 감압 접착제를 제조하는 방법을 제공하는데에 있다.

9. 发明申请

WO2018008985A9 세포시트 제작방법 및 응용을 위한 고분자 박막 배양플레이트 제작방법 및 용도 审中-公开
公开(公告)号：WO2018008985A9
公开(公告)日：2018-01-11
申请号：PCT/KR2017/007195
申请日：2017-07-05
申请人： 한국과학기술원
发明人： 임성갑 , 이은정 , 백지응 , 조영학 , 유승정 , 최고로
IPC分类号： C12N5/00 , C08F212/36 , C08F226/06 , C23C16/452
摘要： 본 발명은 표면자유에너지가 높은 박막을 형성하도록 하는 제1단량체와 표면자유에너지가 낮은 박막을 형성하도록 하는 제2단량체가 형성한 공중합체를 포함하는 배양 플레이트와 이의 제조방법, 및 상기 배양 플레이트를 이용하여 세포 시트 형태의 세포 집합체를 제조 및 전사하는 방법을 제공한다. 상기와 같은 본 발명에 따르면, 종래기술과 비교하여 쉽고 간단한 공정으로 세포 시트 형태의 세포 집합체를 생산할 수 있는 효과가 있다.

10. 发明申请

WO2012112334A3 METHOD OF OPERATING FILAMENT ASSISTED CHEMICAL VAPOR DEPOSITION SYSTEM 审中-公开
标题翻译：操作纤维辅助化学气相沉积系统的方法
公开(公告)号：WO2012112334A3
公开(公告)日：2012-12-20
申请号：PCT/US2012024045
申请日：2012-02-07
申请人： TOKYO ELECTRON AMERICA INC , TOKYO ELECTRON LTD , LEE ERIC M , FAGUET JACQUES
发明人： LEE ERIC M , FAGUET JACQUES
IPC分类号： C23C16/02 , B05D3/00 , C23C16/44 , C23C16/452 , C23C16/46 , C23C16/56
CPC分类号： C23C16/44 , C23C16/452 , C23C16/46 , C23C16/56
摘要： A method of performing a filament-assisted chemical vapor deposition process is described. The method includes providing a substrate holder (220, 320, 420, 1020) in a process chamber (410) of a chemical vapor deposition system (400, 600, 1001, 2001), providing a non-ionizing heat source separate from the substrate holder (220, 320, 420, 1020) in the process chamber (410), disposing a substrate (225, 425, 1025) on the substrate holder (220, 320, 420, 1020), introducing a film forming composition (532) to the process chamber (410), thermally fragmenting the film forming composition (532) using the non-ionizing heat source, and forming a thin film on the substrate (225, 425, 1025) in the process chamber (410). The non-ionizing heat source includes a gas heating device (250, 445, 550, 645, 750, 800, 900, 1045, 2045) through and/or over which the film forming composition (532) flows. The method further includes remotely producing a reactive composition, and introducing the reactive composition to the process chamber (410) to interact with the substrate (225, 425, 1025), wherein the reactive composition is introduced sequentially and/or simultaneously with the introducing the film forming composition (532).
摘要翻译：描述了执行长丝辅助化学气相沉积工艺的方法。该方法包括在化学气相沉积系统（400,600,1001,2001）的处理室（410）中提供衬底保持器（220,320,420,1020），提供与衬底分离的非电离热源（220,320,420,1020），将衬底（225,425,1025）设置在衬底保持器（220,320,420,1020）上，将成膜组合物（532）引入衬底保持器（220,320,420,1020）到处理室（410），使用非电离热源对成膜组合物（532）进行热分解，以及在处理室（410）中的衬底（225,425,1025）上形成薄膜。非电离热源包括通过和/或成膜组合物（532）流经的气体加热装置（250,445,550,645,750,800,900,1045,2045）。该方法还包括远程生产反应性组合物，并且将反应性组合物引入到处理室（410）以与衬底（225,425,1025）相互作用，其中反应性组合物顺序地和/或同时引入成膜组合物（532）。

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