专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2005034224A1 METHOD OF FORMING A METAL LAYER USING AN INTERMITTENT PRECURSOR GAS FLOW PROCESS 审中-公开
标题翻译：使用间歇前体气体流动法形成金属层的方法
公开(公告)号：WO2005034224A1
公开(公告)日：2005-04-14
申请号：PCT/US2004/028893
申请日：2004-09-07
申请人： TOKYO ELECTRON LIMITED , INTERNATIONAL BUSINESS MACHINES CORPORATION , YAMASAKI, Hideaki , MATSUDA, Tsukasa , GOMI, Atsushi , HATANO, Tatsuo , TACHIBANA, Mitsuhiro , MATSUZAVA, Koumei , KAWANO, Yumiko , LEUSINK, Gert, J. , MCFEELY, Fenton, R. , MALHOTRA, Sandra, G. , SIMON, Andrew, H. , YURKAS, John, J.
发明人： YAMASAKI, Hideaki , MATSUDA, Tsukasa , GOMI, Atsushi , HATANO, Tatsuo , TACHIBANA, Mitsuhiro , MATSUZAVA, Koumei , KAWANO, Yumiko , LEUSINK, Gert, J. , MCFEELY, Fenton, R. , MALHOTRA, Sandra, G. , SIMON, Andrew, H. , YURKAS, John, J.
IPC分类号： H01L21/285
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/16 , C23C16/4408 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.
摘要翻译：提供了一种使用间歇式前体气体流动方法在基板上形成金属层的方法。该方法包括将衬底暴露于还原气体，同时将衬底暴露于羰基金属前体气体的脉冲。进行该过程，直到在基底上形成具有所需厚度的金属层。金属层可以形成在基板上，或者可以在金属成核层上形成金属层。

2. 发明申请

WO2005033357A2 LOW-PRESSURE DEPOSITION OF METAL LAYERS FROM METAL-CARBONYL PRECURSORS 审中-公开
标题翻译：从金属 - 碳酰基前体中低压沉积金属层
公开(公告)号：WO2005033357A2
公开(公告)日：2005-04-14
申请号：PCT/US2004/028894
申请日：2004-09-07
申请人： TOKYO ELECTRON LIMITED , INTERNATIONAL BUSINESS MACHINES CORPORATION , YAMASAKI, Hideaki , MATSUDA, Tsukasa , GOMI, Atsushi , HATANO, Tatsuo , SUGIURA, Masahito , KAWANO, Yumiko , LEUSINK, Gert, J. , MCFEELY, Fenton, R. , MALHOTRA, Sandra, G.
发明人： YAMASAKI, Hideaki , MATSUDA, Tsukasa , GOMI, Atsushi , HATANO, Tatsuo , SUGIURA, Masahito , KAWANO, Yumiko , LEUSINK, Gert, J. , MCFEELY, Fenton, R. , MALHOTRA, Sandra, G.
IPC分类号： C23C16/16
CPC分类号： C23C16/16 , H01L21/28556
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO) 6 , Ni(CO) 4 , Mo(CO) 6 , Co 2 (CO) 8 , Rh 4 (CO) 12 , Re 2 (CO) 10 , Cr(CO) 6 , and Ru 3 (CO) 12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500 0 C, by utilizing a residence time less than about 120 msec.
摘要翻译：通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法包括：将包含羰基金属前驱体的工艺气体引入处理室中并且在衬底上沉积金属层。 TCVD工艺利用在衬底上方的处理区中的气态物质的短停留时间来形成低电阻率金属层。在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO）（CO）8，Rh 4（CO）12，以及它们的组合。 Re（CO）10，Cr（CO）6和Ru 3（CO） 12前体。在本发明的另一实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻率W层的方法。

3. 发明申请

WO2005034223A1 METHOD OF DEPOSITING METAL LAYERS FROM METAL-CARBONYL PRECURSORS 审中-公开
标题翻译：从金属碳前驱体沉积金属层的方法
公开(公告)号：WO2005034223A1
公开(公告)日：2005-04-14
申请号：PCT/US2004/028892
申请日：2004-09-07
申请人： TOKYO ELECTRON LIMITED , INTERNATIONAL BUSINESS MACHINES CORPORATION , YAMASAKI, Hideaki , MATSUDA, Tsukasa , GOMI, Atsushi , HATANO, Tatsuo , SUGIURA, Masahito , KAWANO, Yumiko , LEUSINK, Gert, J. , MCFEELY, Fenton, R. , MALHOTRA, Sandra, G.
发明人： YAMASAKI, Hideaki , MATSUDA, Tsukasa , GOMI, Atsushi , HATANO, Tatsuo , SUGIURA, Masahito , KAWANO, Yumiko , LEUSINK, Gert, J. , MCFEELY, Fenton, R. , MALHOTRA, Sandra, G.
IPC分类号： H01L21/285
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76841
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO) 6 , Ni(CO) 4 , MO(CO) 6 , C0 2 (CO) 8 , Rh 4 (CO) 12 , Re2(CO) 10 , Cr(CO) 6 , and Ru 3 (CO) 12 . In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410 0 C and a chamber pressure of about 200 mTorr.
摘要翻译：一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，MO（CO）6，CO 2（CO）8，Rh 4（CO）12， Re 2（CO）10，Cr（CO）6和Ru 3（CO）12）。在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的衬底温度和约200mTorr的室压下从包含W（CO）6前体的工艺气体中沉积W层。

4. 发明申请

WO2007117803A2 METHOD FOR INTRODUCING A PRECURSOR GAS TO A VAPOR DEPOSITION SYSTEM 审中-公开
标题翻译：将前驱气体引入蒸发沉积系统的方法
公开(公告)号：WO2007117803A2
公开(公告)日：2007-10-18
申请号：PCT/US2007/063574
申请日：2007-03-08
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji , GOMI, Atsushi
发明人： SUZUKI, Kenji , GOMI, Atsushi
CPC分类号： C23C16/16 , C23C16/45565 , C23C16/45574 , C23C16/45576
摘要： A method for introducing a precursor vapor to a processing chamber (10, 110) configured for forming a thin metal on a substrate (25, 125) is described. The vapor delivery method includes introducing a dilution gas to the precursor vapor and adjusting the spatial distribution of the dilution gas addition in order to affect improvements to the properties of the deposited film.
摘要翻译：描述了将前体蒸汽引入配置用于在基板（25,125）上形成薄金属的处理室（10,110）的方法。蒸气输送方法包括向前体蒸气引入稀释气体并调节稀释气体添加物的空间分布，以便影响沉积膜的性质的改善。

5. 发明申请

WO2007030225A2 A METHOD OF FORMING A TANTALUM-CONTAINING LAYER FROM A METALORGANIC PRECURSOR 审中-公开
标题翻译：从金属前驱体形成含有钽酸盐层的方法
公开(公告)号：WO2007030225A2
公开(公告)日：2007-03-15
申请号：PCT/US2006/029423
申请日：2006-07-28
申请人： TOKYO ELECTRON LIMITED , ISHIZAKA, Tadahiro , GOMI, Atsushi
发明人： ISHIZAKA, Tadahiro , GOMI, Atsushi
IPC分类号： C23C16/00
CPC分类号： C23C16/16 , C23C16/18 , C23C16/32 , C23C16/34
摘要： A method and precursor for forming and integrating a Ta-containing layer in semiconductor processing. The tantalum precursor has the formula (CpR 1 )(CpR 2 )TaH(CO), where Cp is a cyclopentadienyl functional group and R 1 and R 2 are H or alkyl groups. The method includes providing a substrate in a process chamber of a deposition system, and exposing a process gas comprising the tantalum precursor to the substrate to form the Ta-containing layer. The Ta- containing layer may be treated to remove contaminants and modify the layer. The Ta-containing layer may contain tantalum metal, tantalum carbide, tantalum nitride, or tantalum carbonitride, or a combination thereof, and may be deposited in a TCVD, ALD, or PEALD process. A semiconductor device containing a Ta- containing layer formed on a patterned substrate containing one or more vias or trenches is provided.
摘要翻译：一种用于在半导体处理中形成和积分含Ta层的方法和前体。钽前体具有式（CpR 1 H 2）（CpR 2）2 TaH（CO），其中Cp是环戊二烯基官能团和R 1 和R 2是H或烷基。该方法包括在沉积系统的处理室中提供衬底，并将包含钽前体的工艺气体暴露于衬底以形成含Ta层。可以处理含Ta层以去除污染物并改变层。含Ta层可以包含钽金属，碳化钽，氮化钽或碳氮化钽，或它们的组合，并且可以沉积在TCVD，ALD或PEALD工艺中。提供包含形成在包含一个或多个通孔或沟槽的图案化衬底上的含Ta层的半导体器件。

6. 发明申请

WO2007030218A3 A METHOD OF FORMING A TANTALUM-CONTAINING LAYER FROM A METALORGANIC PRECURSOR 审中-公开
公开(公告)号：WO2007030218A3
公开(公告)日：2007-03-15
申请号：PCT/US2006/028955
申请日：2006-07-27
申请人： TOKYO ELECTRON LIMITED , ISHIZAKA, Tadairo , GOMI, Atsushi
发明人： ISHIZAKA, Tadairo , GOMI, Atsushi
IPC分类号： C23C16/00 , H05H1/24
摘要： A method and precursor for forming and integrating a Ta-containing layer in semiconductor processing. The tantalum precursor has the formula (CpR 1 )(CpR 2 )TaH(CO), where Cp is a cyclopentadienyl functional group and R 1 and R 2 are H or alkyl groups. The method includes providing a substrate in a process chamber of a deposition system, and exposing a process gas comprising the tantalum precursor to the substrate to form the Ta-containing layer. The Ta-containing layer may be treated to remove contaminants and modify the layer. The Ta-containing layer may contain tantalum metal, tantalum carbide, tantalum nitride, or tantalum carbonitride, or a combination thereof, and may be deposited in a TCVD, ALD, or PEALD process. A semiconductor device containing a Ta-containing layer formed on a patterned substrate containing one or more vias or trenches is provided.

7. 发明申请

WO2007117898A1 SYSTEM FOR INTRODUCING A PRECURSOR GAS TO A VAPOR DEPOSITION SYSTEM 审中-公开
标题翻译：将前驱气体引入蒸发器沉积系统的系统
公开(公告)号：WO2007117898A1
公开(公告)日：2007-10-18
申请号：PCT/US2007/064466
申请日：2007-03-21
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji , GOMI, Atsushi
发明人： SUZUKI, Kenji , GOMI, Atsushi
IPC分类号： C23C16/455 , C23C16/16
CPC分类号： C23C16/45574 , C23C16/16 , C23C16/45565
摘要： A system for introducing a precursor vapor to a processing chamber (10, 110) configured for forming a thin metal on a substrate (25, 125) is described. The vapor delivery system includes means for introducing a dilution gas to the precursor vapor and adjusting the spatial distribution of the dilution gas addition in order to affect improvements to the properties of the deposited film.
摘要翻译：描述了用于将前体蒸汽引入配置用于在基板（25,125）上形成薄金属的处理室（10,110）的系统。蒸汽输送系统包括用于将稀释气体引入前体蒸气并调节稀释气体添加物的空间分布的装置，以便影响沉积膜的性质的改善。

8. 发明申请

WO2007109410A3 METHOD AND APPARATUS FOR REDUCING PARTICLE CONTAMINATION IN A DEPOSITION SYSTEM 审中-公开
公开(公告)号：WO2007109410A3
公开(公告)日：2007-09-27
申请号：PCT/US2007/063285
申请日：2007-03-05
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , SUZUKI, Kenji , GOMI, Atsushi , HARA, Masamichi , MIZUSAWA, Yasushi
发明人： SUZUKI, Kenji , GOMI, Atsushi , HARA, Masamichi , MIZUSAWA, Yasushi
IPC分类号： C23C16/44
摘要： A method and system is described for reducing particle contamination of a substrate (25) in a deposition system (1). The deposition system comprises one or more particle diffusers (47) disposed therein and configured to prevent or partially prevent the passage of film precursor particles, or break-up or partially break-up film precursor particles. The particle diffuser may be installed in the film precursor evaporation system (50), or the vapor delivery system (40), or the vapor distribution system (30), or two or more thereof.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式