专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2006104863A3 A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM 审中-公开
公开(公告)号：WO2006104863A3
公开(公告)日：2006-10-05
申请号：PCT/US2006/010682
申请日：2006-03-22
申请人： TOKYO ELECTRON LIMITED , ISHIZAKA, Tadahiro , MATSUDA, Tsukasa , CERIO, Jr., FrankM. , YAMAMOTO, Kaoru
发明人： ISHIZAKA, Tadahiro , MATSUDA, Tsukasa , CERIO, Jr., FrankM. , YAMAMOTO, Kaoru
IPC分类号： C23F1/00 , C23C16/00 , H01J9/00
摘要： A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by altematingly introducing the first process material and the second process material.

2. 发明申请

WO2007111779A2 METHOD OF INTEGRATING PEALD TA-CONTAINING FILMS INTO CU METALLIZATION 审中-公开
标题翻译：将含PE复合膜复合成金属化的方法
公开(公告)号：WO2007111779A2
公开(公告)日：2007-10-04
申请号：PCT/US2007/003212
申请日：2007-02-05
申请人： TOKYO ELECTRON LIMITED , ISHIZAKA, Tadahiro , MATSUDA, Tsukasa , HARA, Masamichi , FAGUET, Jacques , MIZUSAWA, Yasushi
发明人： ISHIZAKA, Tadahiro , MATSUDA, Tsukasa , HARA, Masamichi , FAGUET, Jacques , MIZUSAWA, Yasushi
IPC分类号： C23C16/00 , H05H1/00
CPC分类号： C23C16/45542 , C23C16/32 , C23C16/36 , C23C16/509 , C23C16/56
摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
摘要翻译：用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

3. 发明申请

WO2006104864A2 A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM 审中-公开
标题翻译：等离子体增强原子层沉积系统
公开(公告)号：WO2006104864A2
公开(公告)日：2006-10-05
申请号：PCT/US2006/010685
申请日：2006-03-22
申请人： TOKYO ELECTRON LIMITED , ISHIZAKA, Tadahiro , YAMAMOTO, Kaoru
发明人： ISHIZAKA, Tadahiro , YAMAMOTO, Kaoru
IPC分类号： C23C16/00
CPC分类号： C23C16/4409 , C23C16/4404 , C23C16/4412 , C23C16/45542 , C23C16/45544 , C23C16/5096
摘要： A plasma enhanced atomic layer deposition (PEALD) system includes a processing chamber defining an isolated processing space within the processing chamber, and a substrate holder provided within the processing chamber and configured to support a substrate. A first process material supply system is configured to supply a first process material to the processing chamber, a second process material supply system is configured to supply a second process material to the processing chamber and a power source is configured to couple electromagnetic power to the processing chamber. A contaminant shield is positioned along a periphery of the substrate holder and configured to impede external contaminants that permeate the chamber from traveling to a region of the substrate holder, wherein the film is formed on the substrate by altematingly introducing the first process material and the second process material.
摘要翻译：等离子体增强原子层沉积（PEALD）系统包括限定处理室内的隔离处理空间的处理室和设置在处理室内并被配置为支撑衬底的衬底保持器。第一处理材料供应系统被配置为将第一处理材料供应到处理室，第二处理材料供应系统被配置为将第二处理材料供应到处理室，并且电源被配置为将电磁功率耦合到处理室。污染物屏蔽沿着衬底保持器的周边定位，并且构造成阻止渗透室的外部污染物移动到衬底保持器的区域，其中膜通过替代地引入第一工艺材料而形成在衬底上，而第二工艺材料工艺材料。

4. 发明申请

WO2006101857A2 A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM AND METHOD 审中-公开
标题翻译：等离子体增强原子层沉积系统和方法
公开(公告)号：WO2006101857A2
公开(公告)日：2006-09-28
申请号：PCT/US2006/009190
申请日：2006-03-15
申请人： TOKYO ELECTRON LIMITED , ISHIZAKA, Tadahiro , YAMAMOTO, Kaoru
发明人： ISHIZAKA, Tadahiro , YAMAMOTO, Kaoru
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/4554 , C23C16/45544 , C23C16/5096 , H01J2237/022 , H01L21/76843 , H01L21/76862
摘要： A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process. A first process material is introduced within the process chamber, and a second process material is introduced within the process chamber. Electromagnetic power of more than 600W is coupled to the process chamber during introduction of the second process material in order to generate a plasma that accelerates a reduction reaction between the first and second process materials at a surface of the substrate. The film is formed on the substrate by alternatingly introducing the first process material and the second process material.
摘要翻译：使用等离子体增强原子层沉积（PEALD）工艺在衬底上沉积膜的方法包括将衬底设置在配置为便于PEALD工艺的处理室中。在处理室内引入第一处理材料，并且在处理室内引入第二处理材料。超过600W的电磁功率在引入第二工艺材料期间耦合到处理室，以便产生加速基材表面处的第一和第二工艺材料之间的还原反应的等离子体。通过交替地引入第一处理材料和第二处理材料，在基板上形成膜。

5. 发明申请

WO2007024341A2 METHOD OF PREPARING A FILM LAYER-BY-LAYER USING PLASMA ENHANCED ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：使用等离子体增强原子层沉积法制备薄膜层的方法
公开(公告)号：WO2007024341A2
公开(公告)日：2007-03-01
申请号：PCT/US2006/025985
申请日：2006-06-29
申请人： TOKYO ELECTRON LIMITED , ISHIZAKA, Tadahiro
发明人： ISHIZAKA, Tadahiro
IPC分类号： H01L21/20
CPC分类号： C23C16/52 , C23C16/45529 , C23C16/45531 , C23C16/45542 , C23C16/50 , H01L21/28562 , H01L21/76841
摘要： A method for forming a thin film on a substrate layer by layer using plasma enhanced atomic layer deposition is described. The method comprises using a low power reduction step for at least one cycle in order to substantially avoid partial layer film growth, followed by using a high power reduction step for each cycle thereafter in order to increase deposition rate.
摘要翻译：描述了使用等离子体增强的原子层沉积在基底上形成薄膜的方法。该方法包括使用至少一个循环的低功率降低步骤，以便基本上避免部分层膜生长，随后在其后的每个循环中使用高功率降低步骤，以便提高沉积速率。

6. 发明申请

WO2007117797A2 METHOD OF FORMING A METAL CARBIDE OR METAL CARBONITRIDE FILM HAVING IMPROVED ADHESION 审中-公开
标题翻译：形成具有改进粘合性的金属碳化物或金属碳化物膜的方法
公开(公告)号：WO2007117797A2
公开(公告)日：2007-10-18
申请号：PCT/US2007/063488
申请日：2007-03-07
申请人： TOKYO ELECTRON LIMITED , ISHIZAKA, Tadahiro
发明人： ISHIZAKA, Tadahiro
IPC分类号： C23C16/00
CPC分类号： C23C16/32 , C23C16/36 , C23C16/45527 , C23C16/45542 , C23C16/45565 , C23C16/45574 , C23C16/5096
摘要： A method for forming a metal carbide or metal carbonitride film on a substrate using a vapor deposition process. The method includes comprises introducing a first process material, such as a film precursor, to the substrate followed by introducing a second process material, such as a film reducing agent, to the substrate, whereby plasma can be formed during the introduction of the second process material in order to assist reduction of the first process material on the substrate. Additionally, the temperature of the substrate is elevated to a value approximately equal to or greater than the decomposition temperature of the first process material in order to improve adhesion properties for the metal carbide or metal carbonitride film.
摘要翻译：使用蒸镀法在基板上形成金属碳化物或金属碳氮化物膜的方法。所述方法包括将诸如膜前体的第一处理材料引入到所述基板，然后将诸如薄膜还原剂的第二处理材料引入所述基板，由此可以在引入所述第二工艺期间形成等离子体材料，以帮助减少基材上的第一工艺材料。此外，为了提高金属碳化物或金属碳氮化物膜的粘附性，将基板的温度升高到等于或大于第一处理材料的分解温度的值。

7. 发明申请

WO2006104741A1 A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM HAVING REDUCED CONTAMINATION 审中-公开
标题翻译：具有减少污染的等离子体增强原子沉积沉积体系
公开(公告)号：WO2006104741A1
公开(公告)日：2006-10-05
申请号：PCT/US2006/009984
申请日：2006-03-20
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , ISHIZAKA, Tadahiro
发明人： ISHIZAKA, Tadahiro
IPC分类号： C23C16/458 , C23C16/44 , C23C16/455 , H01L21/00
CPC分类号： C23C16/45542 , C23C16/4401 , C23C16/45525 , C23C16/45544 , C23C16/4583 , H01L21/67155 , H01L21/67751
摘要： A plasma enhanced atomic layer deposition (PEALD) system (101 ) is described, wherein the system comprises a processing space (212) and a high vacuum, ultra-clean transfer space (216). During processing, the substrate to which the thin conformal film is formed is exposed to the processing space. During substrate transfer, the substrate (125) is exposed to the high vacuum space. Processing gases are introduced sequentially and alternately to the process chamber (110) and the pressures and gas flows within, to and from, and between the process chamber (110) and the high vacuum transfer space (216) are controlled to keep the transfer space ultra-clean.
摘要翻译：描述了等离子体增强原子层沉积（PEALD）系统（101），其中该系统包括处理空间（212）和高真空超洁净传送空间（216）。在加工过程中，形成薄保形膜的基板暴露于处理空间。在衬底转移期间，衬底（125）暴露于高真空空间。处理气体被顺序地和交替地引入处理室（110），并且压力和气体在处理室（110）和高真空传送空间（216）之内，之中和之间以及之间流动被控制以保持传送空间超洁净。

8. 发明申请

WO2006101619A2 A DEPOSITION SYSTEM AND METHOD 审中-公开
标题翻译：沉积系统和方法
公开(公告)号：WO2006101619A2
公开(公告)日：2006-09-28
申请号：PCT/US2006/005016
申请日：2006-02-14
申请人： TOKYO ELECTRON LIMITED , ISHIZAKA, Tadahiro , LUDVIKSSON, Audunn
发明人： ISHIZAKA, Tadahiro , LUDVIKSSON, Audunn
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/14 , C23C16/303 , C23C16/34 , C23C16/45538 , C23C16/45544 , C23C16/5096 , H01J37/32082 , H01J37/32192 , H01J2237/335 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31608 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/318 , H01L21/32051
摘要： A method for processing a substrate includes disposing the substrate in a deposition chamber configured to perform a deposition process and depositing a film on the substrate using the deposition process. The substrate having the film thereon is then transferred from the deposition chamber into a treatment chamber and a plasma cleaning process is performed on the substrate in the treatment chamber. Further processing of the substrate is performed after the plasma cleaning process.
摘要翻译：一种用于处理衬底的方法包括将衬底设置在沉积室中，其被配置为执行沉积工艺，并使用沉积工艺在衬底上沉积膜。然后将其上具有膜的基板从沉积室转移到处理室中，并且在处理室中的基板上进行等离子体清洁处理。在等离子体清洗处理之后进行基板的进一步处理。

9. 发明申请

WO2008039606A1 INTEGRATED SUBSTRATE PROCESSING IN A VACUUM PROCESSING TOOL 审中-公开
标题翻译：真空加工工具中的集成基板加工
公开(公告)号：WO2008039606A1
公开(公告)日：2008-04-03
申请号：PCT/US2007/075710
申请日：2007-08-10
申请人： TOKYO ELECTRON LIMITED , ISHIZAKA, Tadahiro , HARA, Masamichi , MIZUSAWA, Yasushi
发明人： ISHIZAKA, Tadahiro , HARA, Masamichi , MIZUSAWA, Yasushi
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/54 , C23C14/566
摘要： A method and system are provided for integrated substrate processing in Cu metallization. The method includes providing a substrate in a vacuum processing tool containing a plurality of processing systems configured to process the substrate and a substrate transfer system configured to transfer the substrate under vacuum conditions between the plurality of processing systems, and performing an integrated deposition process on the substrate. The plurality of processing systems and the substrate transfer system maintain a base pressure of background gases at 6.8 x 10 -8 Torr or lower, preferably 5 x 10 -8 Torr or lower, during the integrated deposition process. According to one embodiment, the integrated process includes depositing a barrier metal layer on the substrate, and depositing a Cu layer on the barrier metal layer. According to another embodiment, the integrated process further includes depositing a depositing a Ru layer on the barrier metal layer, and depositing a Cu layer on the Ru layer.
摘要翻译：提供了用于Cu金属化中的集成基板处理的方法和系统。该方法包括在真空处理工具中提供衬底，该真空处理工具包含配置成处理衬底的多个处理系统和被配置为在多个处理系统之间的真空条件下传送衬底的衬底传送系统，基质。多个处理系统和基板传送系统保持背景气体的基本压力为6.8×10 -8乇或更低，优选为5×10 -8乇或更低，在整个沉积过程中。根据一个实施例，集成工艺包括在衬底上沉积阻挡金属层，以及在阻挡金属层上沉积Cu层。根据另一个实施例，集成工艺还包括在阻挡金属层上沉积Ru层，以及在Ru层上沉积Cu层。

10. 发明申请

WO2007111781A3 METHOD OF LIGHT ENHANCED ATOMIC LAYER DEPOSITION 审中-公开
公开(公告)号：WO2007111781A3
公开(公告)日：2007-10-04
申请号：PCT/US2007/003242
申请日：2007-02-06
申请人： TOKYO ELECTRON LIMITED , ISHIZAKA, Tadahiro , FAGUET, Jacques , CERIO, Frank, M.
发明人： ISHIZAKA, Tadahiro , FAGUET, Jacques , CERIO, Frank, M.
IPC分类号： C23C16/00 , G21H1/00 , H01F41/00
摘要： A method light enhanced atomic layer deposition (1) for forming a film on a substrate (25) The method includes disposing the substrate in a process chamber of a light enhanced atomic layer deposition (LEALD) system configured to perform a LEALD process, and depositing a film on the substrate using the LEALD process, where the depositing includes (a) exposing the substrate to a first process material, (b) exposing the substrate to a second process material containing a reducing agent and irradiating the substrate (25) with a first light radiation having either no or at least partial temporal overlap with the exposing of the substrate to the second process material, (c) repeating steps (a) and (b) until the desired film has been deposited According to one embodiment of the invention, the deposited film can be a TaCN film or a TaC film.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式