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1. 发明申请

WO2008042691A2 PROCESSING SYSTEM CONTAINING A HOT FILAMENT HYDROGEN RADICAL SOURCE FOR INTEGRATED SUBSTRATE PROCESSING 审中-公开
标题翻译：含有热液体氢源的加工系统，用于集成基板加工
公开(公告)号：WO2008042691A2
公开(公告)日：2008-04-10
申请号：PCT/US2007/079667
申请日：2007-09-27
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , MATSUDA, Tsukasa , SAKURAGI, Isamu
发明人： MATSUDA, Tsukasa , SAKURAGI, Isamu
IPC分类号： C23C16/02 , C23C16/452 , C23C16/455 , C23C16/04 , C23C16/18 , C23C16/56
CPC分类号： C23C16/0236 , C23C16/045 , C23C16/18 , C23C16/452 , C23C16/45565 , C23C16/56
摘要： A processing system (1, 504B) and method for integrated substrate processing in a substrate processing tool (500). The processing system (1, 504B) contains a substrate holder (20) configured for supporting and controlling the temperature of the substrate (25), a hot filament hydrogen radical source (31 ) for generating hydrogen radicals, and a controller (70, 510) configured for controlling the processing system (1, 504B). The hot filament hydrogen radical source (31 ) includes a showerhead assembly (30) containing an internal volume (37) and a showerhead plate (35) having gas passages (33) facing the substrate (25) for exposing the substrate (25) to the hydrogen radicals, and at least one meta! wire filament (59, 59a, 59b, 59c) within the interna! volume (37) to thermaliy dissociate H2 gas into the hydrogen radicals. The integrated process includes pretreating exposed surfaces of an etch feature (105) in a dielectric film (113, 115, 624, 626) and an exposed metal interconnect pattern (111 A, 622A) formed underneath the etch feature (105) with a flow of hydrogen radicals generated by thermal decomposition of H2 gas by a hot filament hydrogen radical source (31 ) separated from the substrate (25) by a showerhead plate (35) containing gas passages (33) facing the substrate (25). The integrated process further includes depositing a barrier metal film (116, 628) over the pretreated exposed surfaces, and forming a Cu metal film (113) on the barrier metal film (116, 628).
摘要翻译：一种用于衬底处理工具（500）中的集成衬底处理的处理系统（1,504B）和方法。处理系统（1,504B）包括：衬底保持器（20），其构造成用于支撑和控制衬底（25）的温度，用于产生氢自由基的热丝氢自由基源（31）;以及控制器）配置用于控制处理系统（1,504B）。热丝氢自由基源（31）包括含有内部体积（37）和喷头板（35）的喷头组件（30），喷头板（35）具有面向衬底（25）的气体通道（33），用于将衬底（25）暴露于氢自由基和至少一个元素内部的丝线（59,59a，59b，59c）体积（37）以将H2气体热分解成氢自由基。整合过程包括在介电膜（113,115,624,626）中预处理蚀刻特征（105）的暴露表面，以及形成在蚀刻特征（105）下方的暴露的金属互连图案（111A，622A）由通过包含面向衬底（25）的气体通道（33）的喷头板（35）与基底（25）分离的热丝氢自由基源（31）由H2气体的热分解产生的氢自由基。整合过程还包括在预处理的暴露表面上沉积阻挡金属膜（116,628），以及在阻挡金属膜（116,628）上形成Cu金属膜（113）。

2. 发明申请

WO2008042691A3 PROCESSING SYSTEM CONTAINING A HOT FILAMENT HYDROGEN RADICAL SOURCE FOR INTEGRATED SUBSTRATE PROCESSING 审中-公开
标题翻译：含有热丝氢源的加工系统用于集成衬底加工
公开(公告)号：WO2008042691A3
公开(公告)日：2008-05-22
申请号：PCT/US2007079667
申请日：2007-09-27
申请人： TOKYO ELECTRON LTD , TOKYO ELECTRON AMERICA INC , MATSUDA TSUKASA , SAKURAGI ISAMU
发明人： MATSUDA TSUKASA , SAKURAGI ISAMU
IPC分类号： C23C16/02 , C23C16/04 , C23C16/18 , C23C16/452 , C23C16/455 , C23C16/56
CPC分类号： C23C16/0236 , C23C16/045 , C23C16/18 , C23C16/452 , C23C16/45565 , C23C16/56
摘要： A processing system (1, 504B) and method for integrated substrate processing in a substrate processing tool (500). The processing system (1, 504B) contains a substrate holder (20) configured for supporting and controlling the temperature of the substrate (25), a hot filament hydrogen radical source (31 ) for generating hydrogen radicals, and a controller (70, 510) configured for controlling the processing system (1, 504B). The hot filament hydrogen radical source (31 ) includes a showerhead assembly (30) containing an internal volume (37) and a showerhead plate (35) having gas passages (33) facing the substrate (25) for exposing the substrate (25) to the hydrogen radicals, and at least one meta! wire filament (59, 59a, 59b, 59c) within the interna! volume (37) to thermaliy dissociate H2 gas into the hydrogen radicals. The integrated process includes pretreating exposed surfaces of an etch feature (105) in a dielectric film (113, 115, 624, 626) and an exposed metal interconnect pattern (111 A, 622A) formed underneath the etch feature (105) with a flow of hydrogen radicals generated by thermal decomposition of H2 gas by a hot filament hydrogen radical source (31 ) separated from the substrate (25) by a showerhead plate (35) containing gas passages (33) facing the substrate (25). The integrated process further includes depositing a barrier metal film (116, 628) over the pretreated exposed surfaces, and forming a Cu metal film (113) on the barrier metal film (116, 628).
摘要翻译：一种用于衬底处理工具（500）中的集成衬底处理的处理系统（504B）和方法。处理系统（504B）包含被配置用于支撑和控制衬底（25）的温度的衬底保持器（20），用于产生氢自由基的热丝氢自由基源（31）以及控制器（70,510 ），被配置用于控制处理系统（1，504B）。热灯丝氢根源（31）包括含有内部容积（37）的喷头组件（30）和具有面向基片（25）的气体通道（33）的喷头板（35），用于将基片（25）暴露于氢自由基和至少一个元！内部线丝（59,59a，59b，59c）体积（37）将H 2气体热分解成氢自由基。该集成工艺包括在电介质膜（113,115,624,626）和在蚀刻特征（105）下方形成的暴露的金属互连图案（111A，622A）中利用流预处理蚀刻特征（105）的暴露表面由通过含有面对基板（25）的气体通道（33）的喷头板（35）与基板（25）分离的热灯丝氢自由基源（31）通过H 2气体的热分解产生的氢自由基。该集成工艺还包括在预处理的暴露表面上沉积阻挡金属膜（116,628），并且在阻挡金属膜（116,628）上形成Cu金属膜（113）。

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