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1. 发明申请

WO2007073600A8 ENGINEERED STRUCTURE FOR SOLID-STATE LIGHT EMITTERS 审中-公开
标题翻译：用于固态光发射体的工程结构
公开(公告)号：WO2007073600A8
公开(公告)日：2008-10-02
申请号：PCT/CA2006002132
申请日：2006-12-22
申请人： GROUP IV SEMICONDUCTOR INC , CHIK GEORGE , MACELWEE THOMAS , CALDER IAIN , HILL E STEVEN
发明人： CHIK GEORGE , MACELWEE THOMAS , CALDER IAIN , HILL E STEVEN
IPC分类号： H01L33/00 , H01L29/12
CPC分类号： H05B33/22 , H05B33/08 , H05B33/145 , Y02B20/325
摘要： An engineered structure of a light emitting device comprises multiple layers of alternating active and buffer materials disposed between AC or DC electrodes, which generate an electric field. The active layers comprise luminescent centers, e.g. group IV semiconductor nanocrystals, in a host matrix, e.g. a wide bandgap semiconductor or dielectric material such as silicon dioxide or silicon nitride. The buffer layers are comprised of a wide bandgap semiconductor or dielectric material, and designed with a thickness, in the direction of an applied electric field, that ensures that electrons passing therethrough picks up enough energy to excite the luminescent centers in the adjacent active layer at an excitation energy to emit light efficiently at a desired wavelength.
摘要翻译：发光器件的工程结构包括设置在AC或DC电极之间的多层交替的有源和缓冲材料，其产生电场。有源层包括发光中心，例如 IV族半导体纳米晶体，在宿主基质中，例如，宽带隙半导体或介电材料，例如二氧化硅或氮化硅。缓冲层由宽带隙半导体或电介质材料组成，并且在施加的电场方向上被设计为具有确保通过其的电子通过其吸收足够的能量来激发相邻有源层中的发光中心的厚度激发能量以期望的波长有效发光。

2. 发明申请

WO2007073601A1 PIXEL STRUCTURE FOR A SOLID STATE LIGHT EMITTING DEVICE 审中-公开
标题翻译：固态发光器件的像素结构
公开(公告)号：WO2007073601A1
公开(公告)日：2007-07-05
申请号：PCT/CA2006/002133
申请日：2006-12-22
申请人： GROUP IV SEMICONDUCTOR INC. , CHIK, George , MacELWEE, Thomas , CALDER, Ian , HILL, Steven, E.
发明人： CHIK, George , MacELWEE, Thomas , CALDER, Ian , HILL, Steven, E.
IPC分类号： H01L33/00 , H01L23/31
CPC分类号： H05B33/08 , Y02B20/32
摘要： A light emitting device includes an active layer structure, which has one or more active layers with luminescent centers, e.g. a wide bandgap material with semiconductor nano-particles, deposited on a substrate. For the practical extraction of light from the active layer structure, a transparent electrode is disposed over the active layer structure and a base electrode is placed under the substrate. Transition layers, having a higher conductivity than a top layer of the active layer structure, are formed at contact regions between the upper transparent electrode and the active layer structure, and between the active layer structure and the substrate. Accordingly the high field regions associated with the active layer structure are moved back and away from contact regions, thereby reducing the electric field necessary to generate a desired current to flow between the transparent electrode, the active layer structure and the substrate, and reducing associated deleterious effects of larger electric fields.
摘要翻译：发光器件包括有源层结构，其具有一个或多个具有发光中心的有源层，例如，具有半导体纳米颗粒的宽带隙材料沉积在衬底上。为了从有源层结构中实际提取光，在有源层结构上设置透明电极，在基底下方设置基极。在上部透明电极和有源层结构之间以及有源层结构和衬底之间的接触区域处形成具有比有源层结构的顶层更高的导电性的过渡层。因此，与有源层结构相关联的高场区域被移回并远离接触区域，从而减少了在透明电极，有源层结构和衬底之间产生期望电流所需的电场，并且减少了有害的大电场的影响。

3. 发明申请

WO2004066345A3 DOPED SEMICONDUCTOR NANOCRYSTAL LAYERS AND PREPARATION THEREOF 审中-公开
标题翻译：掺杂的半导体纳米晶层及其制备
公开(公告)号：WO2004066345A3
公开(公告)日：2004-12-23
申请号：PCT/CA2004000075
申请日：2004-01-22
申请人： GROUP IV SEMICONDUCTOR INC , HILL STEVEN E , WOJCIK JACEK , MASCHER PETER , IRVING EDWARD A , UNIV MCMASTER
发明人： HILL STEVEN E , WOJCIK JACEK , MASCHER PETER , IRVING EDWARD A
IPC分类号： C09K11/77 , H01L21/00 , H01L29/00 , H01L29/12 , H01L33/50 , H01L33/00
CPC分类号： B82Y15/00 , B82Y20/00 , B82Y30/00 , C09K11/77 , C09K11/7706 , H01S3/09403
摘要： The present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and tThe present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and to processes for preparing the semiconductor nanocrystal layer.
摘要翻译：本发明涉及一种掺杂半导体纳米晶体层，其包含（a）没有离子注入损伤的IV族氧化物层，（b）分布在IV族氧化物层中的30-50原子百分比的半导体纳米晶体，以及 c）0.5至15原子百分比的一种或多种稀土元素，所述一种或多种稀土元素（i）分散在半导体纳米晶体的表面上，和（ii）基本上均匀分布在整个IV族氧化物的厚度层。本发明还涉及包含上述半导体纳米晶体层和半导体结构的半导体结构。本发明涉及掺杂半导体纳米晶体层，其包含（a）没有离子注入损伤的IV族氧化物层，（b）30-50 （c）0.5-15原子百分比的一种或多种稀土元素，所述一种或多种稀土元素是（i）分散在所述IV族氧化物层的表面上的（i）分散在所述IV族氧化物层的表面上的原子百分比，纳米晶体和（ii）在IV族氧化物层的厚度上基本相等地分布。本发明还涉及包含上述半导体纳米晶体层的半导体结构以及用于制备半导体纳米晶体层的工艺。

4. 发明申请

WO2009065215A1 A LIGHT EMITTING DEVICE WITH A STOPPER LAYER STRUCTURE 审中-公开
标题翻译：具有停止层结构的发光装置
公开(公告)号：WO2009065215A1
公开(公告)日：2009-05-28
申请号：PCT/CA2008/002034
申请日：2008-11-20
申请人： GROUP IV SEMICONDUCTOR INC. , MACELWEE, Thomas , NOEL, Jean-Paul , DUCHARME, Dean , XIN, Yongbao
发明人： MACELWEE, Thomas , NOEL, Jean-Paul , DUCHARME, Dean , XIN, Yongbao
IPC分类号： H05B33/02 , H01L29/12 , H05B33/06
CPC分类号： H01L33/02 , H01L33/42
摘要： Electroluminescent (EL) devices structures are provided comprising a hot electron stopper layer structure to capture hot electrons and dissipate their energy, thereby reducing damage to the transparent conducting oxide (TCO) layer and reducing other hot electron effects, such as charging effects, which impact reliability of EL device structures. The stopper layer structure may comprise a single layer or multiple layers provided between the TCO electrode layer and the emitter structure, and may also function to reduce diffusion or chemical interactions between the TCO and the emitter layer structure. Optionally, stopper layers may also be provided within the emitter structure. Suitable stopper layer materials are wideband gap semiconductors or dielectrics, preferably transparent at wavelengths emitted by the EL device characterized by high impact ionization rates, and/or high relative permittivity relative to adjacent layers of the emitter structure.
摘要翻译：提供电致发光（EL）器件结构，其包括热电子阻挡层结构以捕获热电子并耗散其能量，从而减少对透明导电氧化物（TCO）层的损伤并减少其他热电子效应，例如充电效应，其影响 EL器件结构的可靠性。阻挡层结构可以包括设置在TCO电极层和发射极结构之间的单层或多层，并且还可以起到减少TCO和发射极层结构之间的扩散或化学相互作用的作用。可选地，也可以在发射器结构内设置阻挡层。合适的阻挡层材料是宽带间隙半导体或电介质，优选在由EL器件发射的波长处是透明的，其特征在于高冲击电离速率和/或相对于发射极结构的相邻层的高相对介电常数。

5. 发明申请

WO2008083469A8 LIGHT EMITTING DEVICES WITH A ZINC OXIDE THIN FILM STRUCTURE 审中-公开
标题翻译：具有氧化锌薄膜结构的发光装置
公开(公告)号：WO2008083469A8
公开(公告)日：2008-09-25
申请号：PCT/CA2008000020
申请日：2008-01-09
申请人： GROUP IV SEMICONDUCTOR INC , RIOUX BRIAN , NOEL JEAN-PAUL
发明人： RIOUX BRIAN , NOEL JEAN-PAUL
IPC分类号： H01L21/04 , H01L21/388 , H01L29/04 , H01L29/12 , H01L29/22 , H01L29/227 , H01L29/40 , H01L33/00
CPC分类号： C09K9/02
摘要： The present invention relates to a sol-gel deposition/heat treatment process, which consistently produces polycrystalline direct bandgap semiconductor, e.g. ZnO, thin films exhibiting a photo luminescent (PL) spectrum at room temperature that is dominated by a single peak, e.g. in the ultraviolet part of the spectrum, in which the PL intensity of the bandgap emission is more than approximately 40 times greater than any deep-level defect emission peak or band. The present invention incorporates such direct bandgap semiconductor, e.g. ZnO, polycrystalline thin films produced by the method of the present invention into electro- luminescent devices that exhibit similarly high ratios of bandgap/deep-level defect emission intensity.
摘要翻译：本发明涉及溶胶 - 凝胶沉积/热处理工艺，其一贯地生产多晶直接带隙半导体，例如， ZnO，在室温下表现出由单峰主导的光致发光（PL）光谱的薄膜，例如，在光谱的紫外线部分，其中带隙发射的PL强度大于任何深层缺陷发射峰或带的大约40倍。本发明包括这样的直接带隙半导体。 ZnO，通过本发明的方法制造的多晶薄膜变成具有类似高带隙/深层缺陷发射强度比率的电致发光器件。

6. 发明申请

WO2007073600A1 ENGINEERED STRUCTURE FOR SOLID-STATE LIGHT EMITTERS 审中-公开
标题翻译：用于固态光发射体的工程结构
公开(公告)号：WO2007073600A1
公开(公告)日：2007-07-05
申请号：PCT/CA2006/002132
申请日：2006-12-22
申请人： GROUP IV SEMICONDUCTOR INC. , CHIK, George , MACELWEE, Thomas , CALDER, Iain , HILL, E. Steven
发明人： CHIK, George , MACELWEE, Thomas , CALDER, Iain , HILL, E. Steven
IPC分类号： H01L33/00 , H01L29/12
CPC分类号： H05B33/22 , H05B33/08 , H05B33/145 , Y02B20/32
摘要： An engineered structure of a light emitting device comprises multiple layers of alternating active and buffer materials disposed between AC or DC electrodes, which generate an electric field. The active layers comprise luminescent centers, e.g. group IV semiconductor nanocrystals, in a host matrix, e.g. a wide bandgap semiconductor or dielectric material such as silicon dioxide or silicon nitride. The buffer layers are comprised of a wide bandgap semiconductor or dielectric material, and designed with a thickness, in the direction of an applied electric field, that ensures that electrons passing therethrough picks up enough energy to excite the luminescent centers in the adjacent active layer at an excitation energy to emit light efficiently at a desired wavelength.
摘要翻译：发光器件的工程结构包括设置在AC或DC电极之间的多层交替的有源和缓冲材料，其产生电场。有源层包括发光中心，例如 IV族半导体纳米晶体，在宿主基质中，例如，宽带隙半导体或介电材料，例如二氧化硅或氮化硅。缓冲层由宽带隙半导体或电介质材料组成，并且在施加的电场方向上被设计为具有确保通过其的电子通过其吸收足够的能量来激发相邻有源层中的发光中心的厚度激发能量以期望的波长有效发光。

7. 发明申请

WO2005024960A1 SOLID STATE WHITE LIGHT EMITTER AND DISPLAY USING SAME 审中-公开
标题翻译：固态白光发射器和使用相同的显示器
公开(公告)号：WO2005024960A1
公开(公告)日：2005-03-17
申请号：PCT/CA2004/001059
申请日：2004-07-22
申请人： GROUP IV SEMICONDUCTOR INC.
发明人： HILL, Steven, E.
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , C09K11/77 , F21K9/00 , H01L33/18 , Y02B20/181
摘要： A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device. A series of rare-earth doped silicon and/or silicon carbide nanocrystals that are either combined in a single layer or in individual layers that produce the required Red, Green, and Blue (RGB) emission to form a white light.
摘要翻译：一种发光组件，包括可与电源相连的固态器件，所述电源构造和布置成为固态器件供电以从固态器件发射。一系列稀土掺杂的硅和/或碳化硅纳米晶体，其组合在单层或单层中，产生所需的红，绿和蓝（RGB）发射以形成白光。

8. 发明申请

WO2011106860A1 DEPOSITION OF THIN FILM DIELECTRICS AND LIGHT EMITTING NANO-LAYER STRUCTURES 审中-公开
标题翻译：薄膜电沉积和发光纳米结构的沉积
公开(公告)号：WO2011106860A1
公开(公告)日：2011-09-09
申请号：PCT/CA2010/000287
申请日：2010-03-01
申请人： GROUP IV SEMICONDUCTOR, INC. , NOEL, Jean-Paul , LI, Ming
发明人： NOEL, Jean-Paul , LI, Ming
IPC分类号： H01L21/469 , G02F1/015 , H01L33/00 , H01L33/34 , H01L49/02 , H01S5/30
CPC分类号： H01L21/02164 , C23C16/0218 , C23C16/345 , C23C16/401 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02312 , H01L21/02337 , H05B33/10
摘要： A method is disclosed for deposition of thin film dielectrics, and in particular for chemical vapour deposition of nano-layer structures comprising multiple layers of dielectrics, such as, silicon dioxide, silicon nitride, silicon oxynitride and/or other silicon compatible dielectrics. The method comprises post-deposition surface treatment of deposited layers with a metal or semiconductor source gas, e.g. a silicon source gas. Deposition of silicon containing dielectrics preferably comprises silane-based chemistry for deposition of doped or undoped dielectric layers, and surface treatment of deposited dielectric layers with silane. Surface treatment provides dielectric layers with improved layer-to-layer uniformity and lateral continuity, and substantially atomically flat dielectric layers suitable for multilayer structures for electroluminescent light emitting structures, e.g. active layers containing rare earth containing luminescent centres. Doped or undoped dielectric thin films or nano-layer dielectric structures may also be provided for other semiconductor devices.
摘要翻译：公开了一种用于沉积薄膜电介质的方法，特别是用于化学气相沉积包括多层电介质的纳米层结构，例如二氧化硅，氮化硅，氮氧化硅和/或其它与硅相容的电介质。该方法包括用金属或半导体源气体沉积表面处理沉积层，例如，硅源气体。含硅电介质的沉积优选包括用于沉积掺杂或未掺杂的电介质层的硅烷基化学，以及用硅烷表面处理沉积的介电层。表面处理提供具有改进的层间均匀性和横向连续性的电介质层，以及适用于电致发光发光结构的多层结构的基本上原子平坦的电介质层。含有含稀土的发光中心的活性层。也可以为其它半导体器件提供掺杂或未掺杂的电介质薄膜或纳米层介电结构。

9. 发明申请

WO2004066346A2 DOPED SEMICONDUCTOR NANOCRYSTAL LAYERS, DOPED SEMICONDUCTOR POWDERS AND PHOTONIC DEVICES EMPLOYING SUCH LAYERS OR POWDERS 审中-公开
标题翻译：掺杂的半导体纳米晶层，掺杂的半导体粉末和使用这种层或粉末的光电器件
公开(公告)号：WO2004066346A2
公开(公告)日：2004-08-05
申请号：PCT/CA2004/000076
申请日：2004-01-22
申请人： GROUP IV SEMICONDUCTOR INC. , HILL, Steven, E.
发明人： HILL, Steven, E.
IPC分类号： H01L
CPC分类号： H01S3/0602 , H01L33/18 , H01L33/343 , H01S3/063 , H01S3/0637 , H01S3/1628 , H01S3/169 , H01S3/2383 , H01S3/2391
摘要： The present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and to processes for preparing the semiconductor nanocrystal layer. Furthermore, photonic devices employing the new materials are also provided. The invention provides a doped semiconductor powder comprising nanocrystals of a group IV semiconductor and a rare earth element, the rare earth element being dispersed on the surface of the group IV semiconductor nanocrystals. The invention also provides processes for the preparation of the above doped semiconductor powder, a composite material comprising the a matrix in which is dispersed a doped semiconductor powder, and photonic devices comprising doped semiconductor powders and doped semiconductor layers.
摘要翻译：掺杂半导体纳米晶体层本发明涉及掺杂半导体纳米晶层，其包括（a）不含离子注入损伤的Ⅳ族氧化物层，（b）分布在IV族氧化物层中的半导体纳米晶体的30至50原子％ c）0.5至15原子％的一种或多种稀土元素，所述一种或多种稀土元素为（i）分散在半导体纳米晶体的表面上，以及（ii）基本上相等地分布在IV族氧化物的厚度上层。本发明还涉及包含上述半导体纳米晶层的半导体结构和制备半导体纳米晶层的工艺。此外，还提供了采用新材料的光子器件。本发明提供了包含IV族半导体和稀土元素的纳米晶体的掺杂半导体粉末，稀土元素分散在IV族半导体纳米晶体的表面上。本发明还提供了制备上述掺杂半导体粉末的方法，包括其中分散有掺杂半导体粉末的基质的复合材料和包含掺杂半导体粉末和掺杂半导体层的光子器件。

10. 发明申请

WO2004066345A2 DOPED SEMICONDUCTOR NANOCRYSTAL LAYERS AND PREPARATION THEREOF 审中-公开
标题翻译： DOPED SEMICONDUCTOR NANOCRYSTAL LAYERS AND PREPARTING THEREOF
公开(公告)号：WO2004066345A2
公开(公告)日：2004-08-05
申请号：PCT/CA2004/000075
申请日：2004-01-22
申请人： GROUP IV SEMICONDUCTOR INC. , MCMASTER UNIVERSITY , HILL, Steven, E. , WOJCIK, Jacek , MASCHER, Peter , IRVING, Edward, A.
发明人： HILL, Steven, E. , WOJCIK, Jacek , MASCHER, Peter , IRVING, Edward, A.
IPC分类号： H01L
CPC分类号： B82Y15/00 , B82Y20/00 , B82Y30/00 , C09K11/77 , C09K11/7706 , H01S3/09403
摘要： The present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and tThe present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and to processes for preparing the semiconductor nanocrystal layer.
摘要翻译：掺杂半导体纳米晶体层本发明涉及掺杂半导体纳米晶层，其包括（a）不含离子注入损伤的Ⅳ族氧化物层，（b）分布在IV族氧化物层中的半导体纳米晶体的30至50原子％ c）0.5至15原子％的一种或多种稀土元素，所述一种或多种稀土元素为（i）分散在半导体纳米晶体的表面上，以及（ii）基本上相等地分布在IV族氧化物的厚度上层。本发明还涉及包含上述半导体纳米晶层的半导体结构，以及掺杂半导体纳米晶层技术领域本发明涉及一种掺杂半导体纳米晶层，其包括（a）不含离子注入损伤的Ⅳ族氧化物层，（b）30至50 分布在IV族氧化物层中的半导体纳米晶体的原子百分比，和（c）0.5至15原子％的一种或多种稀土元素，所述一种或多种稀土元素为（i）分散在半导体的表面上纳米晶体和（ii）基本上均匀地分布在IV族氧化物层的厚度上。本发明还涉及包含上述半导体纳米晶层的半导体结构和制备半导体纳米晶层的工艺。

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