专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2004066345A2 DOPED SEMICONDUCTOR NANOCRYSTAL LAYERS AND PREPARATION THEREOF 审中-公开
标题翻译： DOPED SEMICONDUCTOR NANOCRYSTAL LAYERS AND PREPARTING THEREOF
公开(公告)号：WO2004066345A2
公开(公告)日：2004-08-05
申请号：PCT/CA2004/000075
申请日：2004-01-22
申请人： GROUP IV SEMICONDUCTOR INC. , MCMASTER UNIVERSITY , HILL, Steven, E. , WOJCIK, Jacek , MASCHER, Peter , IRVING, Edward, A.
发明人： HILL, Steven, E. , WOJCIK, Jacek , MASCHER, Peter , IRVING, Edward, A.
IPC分类号： H01L
CPC分类号： B82Y15/00 , B82Y20/00 , B82Y30/00 , C09K11/77 , C09K11/7706 , H01S3/09403
摘要： The present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and tThe present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and to processes for preparing the semiconductor nanocrystal layer.
摘要翻译：掺杂半导体纳米晶体层本发明涉及掺杂半导体纳米晶层，其包括（a）不含离子注入损伤的Ⅳ族氧化物层，（b）分布在IV族氧化物层中的半导体纳米晶体的30至50原子％ c）0.5至15原子％的一种或多种稀土元素，所述一种或多种稀土元素为（i）分散在半导体纳米晶体的表面上，以及（ii）基本上相等地分布在IV族氧化物的厚度上层。本发明还涉及包含上述半导体纳米晶层的半导体结构，以及掺杂半导体纳米晶层技术领域本发明涉及一种掺杂半导体纳米晶层，其包括（a）不含离子注入损伤的Ⅳ族氧化物层，（b）30至50 分布在IV族氧化物层中的半导体纳米晶体的原子百分比，和（c）0.5至15原子％的一种或多种稀土元素，所述一种或多种稀土元素为（i）分散在半导体的表面上纳米晶体和（ii）基本上均匀地分布在IV族氧化物层的厚度上。本发明还涉及包含上述半导体纳米晶层的半导体结构和制备半导体纳米晶层的工艺。

IPRDB

热门服务

关于我们

友情链接

联系方式