会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明申请
    • METHOD OF SYNTHESIZING NANOMETER SCALE OBJECTS AND DEVICES RESULTING THEREFROM
    • 合成纳米尺度物体的方法和由此得到的装置
    • WO2008048299A2
    • 2008-04-24
    • PCT/US2006045405
    • 2006-11-22
    • SOLUMEN CORPJENSON MARK L
    • JENSON MARK L
    • H01L21/20
    • C30B25/18B82Y30/00H01L33/005H01L2924/0002H01S3/169H01L2924/00
    • Methods and devices are described that allow the engineering of a wide variety of nanometer scale objects. These methods and devices use the free energies of materials along with deposition conditions to synthesize a wide array of nanometer scale objects including, but not limited to, particles, quantum dots, clusters or crystals. By appropriate selection of materials and fabrication conditions, the material being deposited on a substrate can be caused to coalesce into islands whose shape and size can be engineered to accomplish a specific desired function. Examples of devices fabricated from this method include, but are not limited to, electronic switching devices, optical switching devices, conjugate formation for biomedical applications, laser and LED applications, power and energy systems and solid state lighting applications.
    • 描述的方法和设备可以用于各种纳米尺度物体的工程设计。 这些方法和装置利用材料的自由能以及沉积条件来合成各种纳米尺度物体,包括但不限于粒子,量子点,团簇或晶体。 通过适当选择材料和制造条件,可以使沉积在基底上的材料聚结成岛,其形状和尺寸可以被设计成实现特定的期望功能。 由该方法制造的器件的例子包括但不限于电子开关器件,光学开关器件,用于生物医学应用的共轭形成,激光和LED应用,电力和能量系统以及固态照明应用。
    • 8. 发明申请
    • RARE EARTH DOPED GROUP IV NANOCRYSTAL LAYERS
    • 稀土集团IV纳米晶层
    • WO2004066346A3
    • 2007-11-29
    • PCT/CA2004000076
    • 2004-01-22
    • GROUP IV SEMICONDUCTOR INCHILL STEVEN E
    • HILL STEVEN E
    • H01L33/18H01L33/34H01L33/50H01S3/06H01S3/063H01S3/16H01S3/23H01S5/00
    • H01S3/0602H01L33/18H01L33/343H01S3/063H01S3/0637H01S3/1628H01S3/169H01S3/2383H01S3/2391
    • The present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and to processes for preparing the semiconductor nanocrystal layer. Furthermore, photonic devices employing the new materials are also provided. The invention provides a doped semiconductor powder comprising nanocrystals of a group IV semiconductor and a rare earth element, the rare earth element being dispersed on the surface of the group IV semiconductor nanocrystals. The invention also provides processes for the preparation of the above doped semiconductor powder, a composite material comprising the a matrix in which is dispersed a doped semiconductor powder, and photonic devices comprising doped semiconductor powders and doped semiconductor layers.
    • 掺杂半导体纳米晶体层本发明涉及掺杂半导体纳米晶层,其包括(a)不含离子注入损伤的Ⅳ族氧化物层,(b)分布在IV族氧化物层中的半导体纳米晶体的30至50原子% c)0.5至15原子%的一种或多种稀土元素,所述一种或多种稀土元素为(i)分散在半导体纳米晶体的表面上,以及(ii)基本上相等地分布在IV族氧化物的厚度上 层。 本发明还涉及包含上述半导体纳米晶层的半导体结构和制备半导体纳米晶层的工艺。 此外,还提供了采用新材料的光子器件。 本发明提供了包含IV族半导体和稀土元素的纳米晶体的掺杂半导体粉末,稀土元素分散在IV族半导体纳米晶体的表面上。 本发明还提供了制备上述掺杂半导体粉末的方法,包括其中分散有掺杂半导体粉末的基质的复合材料和包含掺杂半导体粉末和掺杂半导体层的光子器件。