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1. 发明申请

WO2007073600A8 ENGINEERED STRUCTURE FOR SOLID-STATE LIGHT EMITTERS 审中-公开
标题翻译：用于固态光发射体的工程结构
公开(公告)号：WO2007073600A8
公开(公告)日：2008-10-02
申请号：PCT/CA2006002132
申请日：2006-12-22
申请人： GROUP IV SEMICONDUCTOR INC , CHIK GEORGE , MACELWEE THOMAS , CALDER IAIN , HILL E STEVEN
发明人： CHIK GEORGE , MACELWEE THOMAS , CALDER IAIN , HILL E STEVEN
IPC分类号： H01L33/00 , H01L29/12
CPC分类号： H05B33/22 , H05B33/08 , H05B33/145 , Y02B20/325
摘要： An engineered structure of a light emitting device comprises multiple layers of alternating active and buffer materials disposed between AC or DC electrodes, which generate an electric field. The active layers comprise luminescent centers, e.g. group IV semiconductor nanocrystals, in a host matrix, e.g. a wide bandgap semiconductor or dielectric material such as silicon dioxide or silicon nitride. The buffer layers are comprised of a wide bandgap semiconductor or dielectric material, and designed with a thickness, in the direction of an applied electric field, that ensures that electrons passing therethrough picks up enough energy to excite the luminescent centers in the adjacent active layer at an excitation energy to emit light efficiently at a desired wavelength.
摘要翻译：发光器件的工程结构包括设置在AC或DC电极之间的多层交替的有源和缓冲材料，其产生电场。有源层包括发光中心，例如 IV族半导体纳米晶体，在宿主基质中，例如，宽带隙半导体或介电材料，例如二氧化硅或氮化硅。缓冲层由宽带隙半导体或电介质材料组成，并且在施加的电场方向上被设计为具有确保通过其的电子通过其吸收足够的能量来激发相邻有源层中的发光中心的厚度激发能量以期望的波长有效发光。

2. 发明申请

WO2007073601A1 PIXEL STRUCTURE FOR A SOLID STATE LIGHT EMITTING DEVICE 审中-公开
标题翻译：固态发光器件的像素结构
公开(公告)号：WO2007073601A1
公开(公告)日：2007-07-05
申请号：PCT/CA2006/002133
申请日：2006-12-22
申请人： GROUP IV SEMICONDUCTOR INC. , CHIK, George , MacELWEE, Thomas , CALDER, Ian , HILL, Steven, E.
发明人： CHIK, George , MacELWEE, Thomas , CALDER, Ian , HILL, Steven, E.
IPC分类号： H01L33/00 , H01L23/31
CPC分类号： H05B33/08 , Y02B20/32
摘要： A light emitting device includes an active layer structure, which has one or more active layers with luminescent centers, e.g. a wide bandgap material with semiconductor nano-particles, deposited on a substrate. For the practical extraction of light from the active layer structure, a transparent electrode is disposed over the active layer structure and a base electrode is placed under the substrate. Transition layers, having a higher conductivity than a top layer of the active layer structure, are formed at contact regions between the upper transparent electrode and the active layer structure, and between the active layer structure and the substrate. Accordingly the high field regions associated with the active layer structure are moved back and away from contact regions, thereby reducing the electric field necessary to generate a desired current to flow between the transparent electrode, the active layer structure and the substrate, and reducing associated deleterious effects of larger electric fields.
摘要翻译：发光器件包括有源层结构，其具有一个或多个具有发光中心的有源层，例如，具有半导体纳米颗粒的宽带隙材料沉积在衬底上。为了从有源层结构中实际提取光，在有源层结构上设置透明电极，在基底下方设置基极。在上部透明电极和有源层结构之间以及有源层结构和衬底之间的接触区域处形成具有比有源层结构的顶层更高的导电性的过渡层。因此，与有源层结构相关联的高场区域被移回并远离接触区域，从而减少了在透明电极，有源层结构和衬底之间产生期望电流所需的电场，并且减少了有害的大电场的影响。

3. 发明申请

WO2007073601A8 PIXEL STRUCTURE FOR A SOLID STATE LIGHT EMITTING DEVICE 审中-公开
标题翻译：固态发光器件的像素结构
公开(公告)号：WO2007073601A8
公开(公告)日：2008-09-04
申请号：PCT/CA2006002133
申请日：2006-12-22
申请人： GROUP IV SEMICONDUCTOR INC , CHIK GEORGE , MACELWEE THOMAS , CALDER IAIN , HILL STEVEN E
发明人： CHIK GEORGE , MACELWEE THOMAS , CALDER IAIN , HILL STEVEN E
IPC分类号： H01L33/00 , H01L23/31
CPC分类号： H05B33/08 , Y02B20/325
摘要： A light emitting device includes an active layer structure, which has one or more active layers with luminescent centers, e.g. a wide bandgap material with semiconductor nano-particles, deposited on a substrate. For the practical extraction of light from the active layer structure, a transparent electrode is disposed over the active layer structure and a base electrode is placed under the substrate. Transition layers, having a higher conductivity than a top layer of the active layer structure, are formed at contact regions between the upper transparent electrode and the active layer structure, and between the active layer structure and the substrate. Accordingly the high field regions associated with the active layer structure are moved back and away from contact regions, thereby reducing the electric field necessary to generate a desired current to flow between the transparent electrode, the active layer structure and the substrate, and reducing associated deleterious effects of larger electric fields.
摘要翻译：发光器件包括有源层结构，其具有一个或多个具有发光中心的有源层，例如，具有半导体纳米颗粒的宽带隙材料沉积在衬底上。为了从有源层结构中实际提取光，在有源层结构上设置透明电极，在基底下方设置基极。在上部透明电极和有源层结构之间以及有源层结构和衬底之间的接触区域处形成具有比有源层结构的顶层更高的导电性的过渡层。因此，与有源层结构相关联的高场区域被移回并远离接触区域，从而减少了在透明电极，有源层结构和衬底之间产生期望电流所需的电场，并且减少了有害的大电场的影响。

4. 发明申请

WO2007073600A1 ENGINEERED STRUCTURE FOR SOLID-STATE LIGHT EMITTERS 审中-公开
标题翻译：用于固态光发射体的工程结构
公开(公告)号：WO2007073600A1
公开(公告)日：2007-07-05
申请号：PCT/CA2006/002132
申请日：2006-12-22
申请人： GROUP IV SEMICONDUCTOR INC. , CHIK, George , MACELWEE, Thomas , CALDER, Iain , HILL, E. Steven
发明人： CHIK, George , MACELWEE, Thomas , CALDER, Iain , HILL, E. Steven
IPC分类号： H01L33/00 , H01L29/12
CPC分类号： H05B33/22 , H05B33/08 , H05B33/145 , Y02B20/32
摘要： An engineered structure of a light emitting device comprises multiple layers of alternating active and buffer materials disposed between AC or DC electrodes, which generate an electric field. The active layers comprise luminescent centers, e.g. group IV semiconductor nanocrystals, in a host matrix, e.g. a wide bandgap semiconductor or dielectric material such as silicon dioxide or silicon nitride. The buffer layers are comprised of a wide bandgap semiconductor or dielectric material, and designed with a thickness, in the direction of an applied electric field, that ensures that electrons passing therethrough picks up enough energy to excite the luminescent centers in the adjacent active layer at an excitation energy to emit light efficiently at a desired wavelength.
摘要翻译：发光器件的工程结构包括设置在AC或DC电极之间的多层交替的有源和缓冲材料，其产生电场。有源层包括发光中心，例如 IV族半导体纳米晶体，在宿主基质中，例如，宽带隙半导体或介电材料，例如二氧化硅或氮化硅。缓冲层由宽带隙半导体或电介质材料组成，并且在施加的电场方向上被设计为具有确保通过其的电子通过其吸收足够的能量来激发相邻有源层中的发光中心的厚度激发能量以期望的波长有效发光。

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