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1. 发明申请

WO2007073601A1 PIXEL STRUCTURE FOR A SOLID STATE LIGHT EMITTING DEVICE 审中-公开
标题翻译：固态发光器件的像素结构
公开(公告)号：WO2007073601A1
公开(公告)日：2007-07-05
申请号：PCT/CA2006/002133
申请日：2006-12-22
申请人： GROUP IV SEMICONDUCTOR INC. , CHIK, George , MacELWEE, Thomas , CALDER, Ian , HILL, Steven, E.
发明人： CHIK, George , MacELWEE, Thomas , CALDER, Ian , HILL, Steven, E.
IPC分类号： H01L33/00 , H01L23/31
CPC分类号： H05B33/08 , Y02B20/32
摘要： A light emitting device includes an active layer structure, which has one or more active layers with luminescent centers, e.g. a wide bandgap material with semiconductor nano-particles, deposited on a substrate. For the practical extraction of light from the active layer structure, a transparent electrode is disposed over the active layer structure and a base electrode is placed under the substrate. Transition layers, having a higher conductivity than a top layer of the active layer structure, are formed at contact regions between the upper transparent electrode and the active layer structure, and between the active layer structure and the substrate. Accordingly the high field regions associated with the active layer structure are moved back and away from contact regions, thereby reducing the electric field necessary to generate a desired current to flow between the transparent electrode, the active layer structure and the substrate, and reducing associated deleterious effects of larger electric fields.
摘要翻译：发光器件包括有源层结构，其具有一个或多个具有发光中心的有源层，例如，具有半导体纳米颗粒的宽带隙材料沉积在衬底上。为了从有源层结构中实际提取光，在有源层结构上设置透明电极，在基底下方设置基极。在上部透明电极和有源层结构之间以及有源层结构和衬底之间的接触区域处形成具有比有源层结构的顶层更高的导电性的过渡层。因此，与有源层结构相关联的高场区域被移回并远离接触区域，从而减少了在透明电极，有源层结构和衬底之间产生期望电流所需的电场，并且减少了有害的大电场的影响。

2. 发明申请

WO2005024960A1 SOLID STATE WHITE LIGHT EMITTER AND DISPLAY USING SAME 审中-公开
标题翻译：固态白光发射器和使用相同的显示器
公开(公告)号：WO2005024960A1
公开(公告)日：2005-03-17
申请号：PCT/CA2004/001059
申请日：2004-07-22
申请人： GROUP IV SEMICONDUCTOR INC.
发明人： HILL, Steven, E.
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , C09K11/77 , F21K9/00 , H01L33/18 , Y02B20/181
摘要： A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device. A series of rare-earth doped silicon and/or silicon carbide nanocrystals that are either combined in a single layer or in individual layers that produce the required Red, Green, and Blue (RGB) emission to form a white light.
摘要翻译：一种发光组件，包括可与电源相连的固态器件，所述电源构造和布置成为固态器件供电以从固态器件发射。一系列稀土掺杂的硅和/或碳化硅纳米晶体，其组合在单层或单层中，产生所需的红，绿和蓝（RGB）发射以形成白光。

3. 发明申请

WO2006029533A1 THIN FILM ALTERNATING CURRENT SOLID-STATE LIGHTING 审中-公开
标题翻译：薄膜交替电流固态照明
公开(公告)号：WO2006029533A1
公开(公告)日：2006-03-23
申请号：PCT/CA2005/001418
申请日：2005-09-16
申请人： GROUP IV SEMICONDUCTOR INC. , HILL, Steven, E.
发明人： HILL, Steven, E.
IPC分类号： H01L33/00
CPC分类号： H05B33/145 , F21K9/00 , H05B33/22 , H05B33/28
摘要： Group IV semiconductor nanocrystal doped with rare earths or other light emitting metal to form alternating current solid-state devices that can be designed to operate at a variety of voltages including line voltages. The semiconductor nanocrystals are preferably silicon, silicon carbide, germanium or germanium carbide, and the electric luminescent device may have an upper and lower thin coat of a semiconductor nanocrystal glass material in turn connected to alternating current electrodes. The present invention enables one to fabricate a solid-state light that can use standard fixtures, e.g. Edison type, and standard AC voltages and frequencies for use in houses and businesses without refurbishing the installed lighting fixtures.
摘要翻译：掺杂有稀土或其他发光金属的IV族半导体纳米晶体以形成可被设计为在包括线路电压的各种电压下工作的交流固态器件。半导体纳米晶体优选为硅，碳化硅，锗或碳化锗，并且电致发光器件可以具有半导体纳米晶体玻璃材料的上下薄膜，其又连接到交流电极。本发明使得能够制造可以使用标准夹具的固态光，例如，爱迪生型，以及用于房屋和企业的标准交流电压和频率，无需翻新安装的照明灯具。

4. 发明申请

WO2004066346A2 DOPED SEMICONDUCTOR NANOCRYSTAL LAYERS, DOPED SEMICONDUCTOR POWDERS AND PHOTONIC DEVICES EMPLOYING SUCH LAYERS OR POWDERS 审中-公开
标题翻译：掺杂的半导体纳米晶层，掺杂的半导体粉末和使用这种层或粉末的光电器件
公开(公告)号：WO2004066346A2
公开(公告)日：2004-08-05
申请号：PCT/CA2004/000076
申请日：2004-01-22
申请人： GROUP IV SEMICONDUCTOR INC. , HILL, Steven, E.
发明人： HILL, Steven, E.
IPC分类号： H01L
CPC分类号： H01S3/0602 , H01L33/18 , H01L33/343 , H01S3/063 , H01S3/0637 , H01S3/1628 , H01S3/169 , H01S3/2383 , H01S3/2391
摘要： The present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and to processes for preparing the semiconductor nanocrystal layer. Furthermore, photonic devices employing the new materials are also provided. The invention provides a doped semiconductor powder comprising nanocrystals of a group IV semiconductor and a rare earth element, the rare earth element being dispersed on the surface of the group IV semiconductor nanocrystals. The invention also provides processes for the preparation of the above doped semiconductor powder, a composite material comprising the a matrix in which is dispersed a doped semiconductor powder, and photonic devices comprising doped semiconductor powders and doped semiconductor layers.
摘要翻译：掺杂半导体纳米晶体层本发明涉及掺杂半导体纳米晶层，其包括（a）不含离子注入损伤的Ⅳ族氧化物层，（b）分布在IV族氧化物层中的半导体纳米晶体的30至50原子％ c）0.5至15原子％的一种或多种稀土元素，所述一种或多种稀土元素为（i）分散在半导体纳米晶体的表面上，以及（ii）基本上相等地分布在IV族氧化物的厚度上层。本发明还涉及包含上述半导体纳米晶层的半导体结构和制备半导体纳米晶层的工艺。此外，还提供了采用新材料的光子器件。本发明提供了包含IV族半导体和稀土元素的纳米晶体的掺杂半导体粉末，稀土元素分散在IV族半导体纳米晶体的表面上。本发明还提供了制备上述掺杂半导体粉末的方法，包括其中分散有掺杂半导体粉末的基质的复合材料和包含掺杂半导体粉末和掺杂半导体层的光子器件。

5. 发明申请

WO2004066345A2 DOPED SEMICONDUCTOR NANOCRYSTAL LAYERS AND PREPARATION THEREOF 审中-公开
标题翻译： DOPED SEMICONDUCTOR NANOCRYSTAL LAYERS AND PREPARTING THEREOF
公开(公告)号：WO2004066345A2
公开(公告)日：2004-08-05
申请号：PCT/CA2004/000075
申请日：2004-01-22
申请人： GROUP IV SEMICONDUCTOR INC. , MCMASTER UNIVERSITY , HILL, Steven, E. , WOJCIK, Jacek , MASCHER, Peter , IRVING, Edward, A.
发明人： HILL, Steven, E. , WOJCIK, Jacek , MASCHER, Peter , IRVING, Edward, A.
IPC分类号： H01L
CPC分类号： B82Y15/00 , B82Y20/00 , B82Y30/00 , C09K11/77 , C09K11/7706 , H01S3/09403
摘要： The present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and tThe present invention relates to a doped semiconductor nanocrystal layer comprising (a) a group IV oxide layer which is free of ion implantation damage, (b) from 30 to 50 atomic percent of a semiconductor nanocrystal distributed in the group IV oxide layer, and (c) from 0.5 to 15 atomic percent of one or more rare earth element, the one or more rare earth element being (i) dispersed on the surface of the semiconductor nanocrystal and (ii) distributed substantially equally through the thickness of the group IV oxide layer. The present invention also relates to a semiconductor structure comprising the above semiconductor nanocrystal layer and to processes for preparing the semiconductor nanocrystal layer.
摘要翻译：掺杂半导体纳米晶体层本发明涉及掺杂半导体纳米晶层，其包括（a）不含离子注入损伤的Ⅳ族氧化物层，（b）分布在IV族氧化物层中的半导体纳米晶体的30至50原子％ c）0.5至15原子％的一种或多种稀土元素，所述一种或多种稀土元素为（i）分散在半导体纳米晶体的表面上，以及（ii）基本上相等地分布在IV族氧化物的厚度上层。本发明还涉及包含上述半导体纳米晶层的半导体结构，以及掺杂半导体纳米晶层技术领域本发明涉及一种掺杂半导体纳米晶层，其包括（a）不含离子注入损伤的Ⅳ族氧化物层，（b）30至50 分布在IV族氧化物层中的半导体纳米晶体的原子百分比，和（c）0.5至15原子％的一种或多种稀土元素，所述一种或多种稀土元素为（i）分散在半导体的表面上纳米晶体和（ii）基本上均匀地分布在IV族氧化物层的厚度上。本发明还涉及包含上述半导体纳米晶层的半导体结构和制备半导体纳米晶层的工艺。

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