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1. 发明申请

WO2012170160A1 METAL OXIDE TFT WITH IMPROVED SOURCE/DRAIN CONTACTS 审中-公开
标题翻译：具有改进源/漏联系的金属氧化物薄膜
公开(公告)号：WO2012170160A1
公开(公告)日：2012-12-13
申请号：PCT/US2012/038075
申请日：2012-05-16
申请人： CBRITE INC. , SHIEH, Chan-long , YU, Gang , FOONG, Fatt
发明人： SHIEH, Chan-long , YU, Gang , FOONG, Fatt
IPC分类号： H01L21/36 , H01L21/44 , H01L21/465
CPC分类号： H01L29/7869 , H01L21/428 , H01L29/45 , H01L29/66969 , H01L29/78606
摘要： A method of forming ohmic source/drain contacts in a metal oxide semiconductor thin film transistor includes providing a gate, a gate dielectric, a high carrier concentration metal oxide semiconductor active layer with a band gap and spaced apart source/drain metal contacts in a thin film transistor configuration. The spaced apart source/drain metal contacts define a channel region in the active layer. An oxidizing ambient is provided adjacent the channel region and the gate and the channel region are heated in the oxidizing ambient to reduce the carrier concentration in the channel area. Alternatively or in addition each of the source/drain contacts includes a very thin layer of low work function metal positioned on the metal oxide semiconductor active layer and a barrier layer of high work function metal is positioned on the low work function metal.
摘要翻译：在金属氧化物半导体薄膜晶体管中形成欧姆源极/漏极接触的方法包括：提供栅极，栅极电介质，具有带隙的高载流子浓度金属氧化物半导体有源层和间隔开的薄/弱金属氧化物半导体有源层薄膜晶体管配置。间隔开的源极/漏极金属触点限定有源层中的沟道区。在沟道区域附近提供氧化环境，并且在氧化环境中加热栅极和沟道区域以降低沟道区域中的载流子浓度。或者或另外每个源极/漏极触点包括位于金属氧化物半导体有源层上的非常薄的低功函数金属层，并且高功函数金属的阻挡层位于低功函数金属上。

2. 发明申请

WO2011022144A1 AMOLED WITH CASCADED OLED STRUCTURES 审中-公开
标题翻译：嵌入式OLED结构
公开(公告)号：WO2011022144A1
公开(公告)日：2011-02-24
申请号：PCT/US2010/042385
申请日：2010-07-19
申请人： CBRITE INC. , SHIEH, Chan-long , YU, Gang
发明人： SHIEH, Chan-long , YU, Gang
IPC分类号： H01L51/50
CPC分类号： H01L27/3244 , H01L27/3204 , H01L27/3246
摘要： An active matrix organic light emitting display includes a plurality of pixels with each pixel including at least one organic light emitting diode circuit. Each diode circuit producing a predetermined amount of light Im in response to power W applied to the circuit and including n organic light emitting diodes cascaded in series so as to increase voltage dropped across the cascaded diodes by the factor of n, where n is an integer greater than one. Each diode of the n organic light emitting diodes produces approximately 1/n of the predetermined amount of light Im so as to reduce current flowing in the diodes by 1/n. The organic light emitting diode circuit of each pixel includes a thin film transistor current driver with the cascaded diodes connected in the source/drain circuit so the current driver provides the current flowing in the diodes.
摘要翻译：有源矩阵有机发光显示器包括多个像素，每个像素包括至少一个有机发光二极管电路。每个二极管电路响应于施加到电路的功率W产生预定量的光Im，并且包括串联级联的n个有机发光二极管，以便增加跨越级联二极管的电压以n为因子，其中n是整数大于一。 n个有机发光二极管的每个二极管产生大约1 / n个预定量的光Im，以便将在二极管中流动的电流减少1 / n。每个像素的有机发光二极管电路包括薄膜晶体管电流驱动器，其中级联二极管连接在源极/漏极电路中，因此电流驱动器提供流过二极管的电流。

3. 发明申请

WO2010009128A1 METAL OXIDE TFT WITH IMPROVED CARRIER MOBILITY 审中-公开
标题翻译：具有改进载体移动性的金属氧化物薄膜
公开(公告)号：WO2010009128A1
公开(公告)日：2010-01-21
申请号：PCT/US2009/050542
申请日：2009-07-14
申请人： CBRITE INC.
IPC分类号： H01L35/24
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78696
摘要： A fabrication method is used in conjunction with a semiconductor device having a metal oxide active layer less than lOOnm thick and the upper major surface and the lower major surface have material in abutting engagement to form underlying interfaces and overlying interfaces. The method of fabrication includes controlling interfacial interactions in the underlying interfaces and the overlying interfaces to adjust the carrier density in the adjacent metal oxide by selecting a metal oxide for the metal oxide active layer and by selecting a specific material for the material in abutting engagement. The method also includes one or both steps of controlling interactions in underlying interfaces by surface treatment of an underlying material forming a component of the underlying interface and controlling interactions in overlying interfaces by surface treatment of the metal oxide film performed prior to deposition of material on the metal oxide layer.
摘要翻译：制造方法与具有小于100nm厚的金属氧化物活性层的半导体器件结合使用，并且上主表面和下主表面具有邻接接合的材料以形成下面的界面和上覆界面。制造方法包括通过选择用于金属氧化物活性层的金属氧化物并通过选择用于邻接接合的材料的特定材料来控制底层界面和上覆界面中的界面相互作用来调节相邻金属氧化物中的载流子密度。该方法还包括一个或两个步骤，通过对形成下面界面的组分的下层材料进行表面处理来控制底层界面中的相互作用，并且通过在将材料沉积在其上的材料之前进行的金属氧化物膜的表面处理来控制覆盖界面中的相互作用金属氧化物层。

4. 发明申请

WO2014070576A3 LED DIE DISPERSAL IN DISPLAYS AND LIGHT PANELS WITH PRESERVING NEIGHBORING RELATIONSHIP 审中-公开
标题翻译：显示屏和LED面板中的LED指示灯保持相邻关系
公开(公告)号：WO2014070576A3
公开(公告)日：2015-07-16
申请号：PCT/US2013066610
申请日：2013-10-24
申请人： CBRITE INC
发明人： SHIEH CHAN-LONG , YU GANG
IPC分类号： H01L21/00
CPC分类号： H01L21/6836 , H01L21/67144 , H01L21/67721 , H01L21/68757 , H01L21/68778 , H01L25/042 , H01L25/0753 , H01L25/50 , H01L27/1222 , H01L27/1225 , H01L31/18 , H01L33/0095 , H01L33/44 , H01L33/58 , H01L33/62 , H01L2224/83 , H01L2224/95 , H01L2225/06527 , H01L2225/06555 , H01L2924/0002 , H01L2933/0025 , H01L2933/0058 , H01L2933/0066 , Y10T156/171 , H01L2924/00
摘要： A method of dispersing semiconductor chips from a wafer of semiconductor chips onto a substrate while preserving the neighboring relationship of each chip to each adjacent chip is disclosed. The method includes dispersing the wafer into sequential columns of semiconductor chips with a first pitch between columns while preserving the neighboring relationship and sequentially dispersing the columns of semiconductor chips into rows of individual chips with a second pitch between rows onto a substrate while preserving the neighboring relationship.
摘要翻译：公开了将半导体芯片从半导体芯片的晶片分散到基板上同时保持每个芯片与每个相邻芯片的相邻关系的方法。该方法包括将晶片分散在具有列之间的第一间距的顺序的半导体芯片列中，同时保持相邻关系，并将半导体芯片的列顺序地分散到具有行之间的第二间距的单个芯片行到基板上，同时保持相邻关系。

5. 发明申请

WO2015073502A1 MOTFT WITH UN-PATTERNED ETCH-STOP 审中-公开
标题翻译：具有不间断蚀刻的MOTFT
公开(公告)号：WO2015073502A1
公开(公告)日：2015-05-21
申请号：PCT/US2014/065161
申请日：2014-11-12
申请人： CBRITE INC.
发明人： YU, Gang , SHIEH, Chan-Long , MUSOLF, Juergen , FOONG, Fatt , XIAO, Tian
IPC分类号： H01L21/36 , H01L21/38 , H01L29/86
CPC分类号： H01L27/1203 , H01L21/02565 , H01L21/02664 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.
摘要翻译：一种制造高迁移率半导体金属氧化物薄膜晶体管的方法，包括以下步骤：沉积半导体金属氧化物材料层，在MO材料层上沉积蚀刻停止材料的覆盖层，以及图案化源/漏层包括将源极/漏极金属层蚀刻成定位成限定半导体金属氧化物层中的沟道区域的源极/漏极端子的蚀刻停止材料的覆盖层上的金属。蚀刻停止材料至少在源极/漏极端子之下在垂直于覆盖层的平面的方向上导电，以提供每个源极/漏极端子和半导体金属氧化物材料层之间的电接触。蚀刻停止材料也是化学稳固的，以在蚀刻工艺期间保护半导体金属氧化物沟道材料层。

6. 发明申请

WO2014189681A2 STABLE HIGH MOBILITY MOTFT AND FABRICATION AT LOW TEMPERATURE 审中-公开
标题翻译：稳定的高移动性和低温制造
公开(公告)号：WO2014189681A2
公开(公告)日：2014-11-27
申请号：PCT/US2014/037191
申请日：2014-05-07
申请人： CBRITE INC.
发明人： SHIEH, Chan-long , YU, Gang , FOONG, Fatt , MUSOLF, Juergen
IPC分类号： H01L21/465
CPC分类号： H01L29/66969 , H01L21/02063 , H01L21/02565 , H01L21/02631 , H01L21/76805 , H01L21/76814 , H01L21/76895 , H01L27/1225 , H01L29/247 , H01L29/42384 , H01L29/517 , H01L29/518 , H01L29/66742 , H01L29/78603 , H01L29/78606 , H01L29/78618 , H01L29/78693 , H01L29/78696 , H01L2021/775
摘要： A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and in situ . The layer of amorphous metal oxide has a mobility above 40 cm 2 /Vs and a carrier concentration in a range of approximately 10 18 cm -3 to approximately 5xl0 19 cm -3 . Source/drain contacts are positioned on the protective layer and in electrical contact therewith.
摘要翻译：制造稳定的高迁移率无定形MOTFT的方法包括提供其上形成有栅极的基板和位于栅极上方的栅介质层的步骤。通过溅射将载流子传输结构沉积在栅极介电层上。载流子传输结构包括邻近栅极电介质的非晶高迁移率金属氧化物层，以及沉积在无氧和原位沉积的无定形高迁移率金属氧化物层上的相对惰性的材料保护层。无定形金属氧化物层的迁移率高于40cm 2 / Vs，载流子浓度在约1018cm-3至约5×1019cm-3的范围内。源极/漏极触点位于保护层上并与其电接触。

7. 发明申请

WO2008057560A3 METAL-INSULATOR-METAL (MIM) DEVICES AND THEIR METHODS OF FABRICATION 审中-公开
标题翻译：金属绝缘子金属（MIM）器件及其制造方法
公开(公告)号：WO2008057560A3
公开(公告)日：2008-07-31
申请号：PCT/US2007023441
申请日：2007-11-06
申请人： CBRITE INC , GONG XIONG , YANG KAIXIA , YU GANG , NILSSON BOO JORGEN LARS , SHIEH CHAN-LONG , LEE HSING-CHUNG , FOONG FATT
发明人： GONG XIONG , YANG KAIXIA , YU GANG , NILSSON BOO JORGEN LARS , SHIEH CHAN-LONG , LEE HSING-CHUNG , FOONG FATT
IPC分类号： H01L29/22 , G02F1/1365 , H01L29/417 , H01L29/786 , H01L29/861 , H01L51/05 , H01L51/10
CPC分类号： H01L29/861 , G02F1/1365 , G02F1/167 , H01L29/22 , H01L29/417 , H01L29/786 , H01L45/00 , H01L51/0035 , H01L51/0579 , H01L51/0587
摘要： Two-terminal switching devices of MIM type having at least one electrode formed by a liquid phase processing method are provided for use in active matrix backplane applications; more specifically, MIM devices with symmetric current-voltage characteristics are applied for LCD active matrix backplane applications, and MIM devices with asymmetric current-voltage characteristics are applied for active matrix backplane implementation for electrophoretic displays (EPD) and rotating element displays. In particular, the combination of the bottom metal, metal-oxide insulator and solution-processible top conducting layer enables high throughput, roll-to-roll process for flexible displays.
摘要翻译：提供具有通过液相处理方法形成的至少一个电极的MIM型的两端开关装置用于有源矩阵背板应用; 更具体地说，将具有对称电流 - 电压特性的MIM器件应用于LCD有源矩阵背板应用，并且将具有不对称电流 - 电压特性的MIM器件应用于电泳显示器（EPD）和旋转元件显示器的有源矩阵背板实施。特别地，底部金属，金属氧化物绝缘体和可溶液加工的顶部导电层的组合可实现灵活显示器的高生产率，卷对卷过程。

8. 发明申请

WO2018034982A1 DUAL DETECTION SCHEME FOR DNA SEQUENCING 审中-公开
标题翻译： DNA测序的双重检测方案
公开(公告)号：WO2018034982A1
公开(公告)日：2018-02-22
申请号：PCT/US2017/046500
申请日：2017-08-11
申请人： CBRITE INC.
发明人： GUNNING, Kerry , ACKLEY, Donald , SHIEH, Chan-long
IPC分类号： C12Q1/68 , C12M1/34
CPC分类号： G01N21/6428 , C12Q1/6869 , G01N27/4145 , G01N2021/6439 , G01N2201/062 , C12Q2563/107 , C12Q2565/607
摘要： Apparatus for fluorescent and ion sensing of DNA nucleotide incorporation events including DNA nucleotide incorporation structure designed to have sequencing primers bonded to a surface for the incorporation of DNA nucleotides thereon. At least some of the DNA nucleotides having a fluorescent label. A photodiode positioned adjacent the incorporation structure and an illumination device positioned adjacent the DNA nucleotide incorporation structure to illuminate DNA nucleotides incorporated onto the sequencing primers. The illumination device exciting the fluorescent labels when incorporation occurs and the photodiode positioned to sense the excited fluorescent labels. Ion sensing apparatus positioned adjacent the DNA nucleotide incorporation structure including a metal oxide thin film transistor with a gate electrically coupled to receive an electrical signal indicative of ion emissions produced by the DNA nucleotide incorporated onto DNA target fragments or sequencing primers.
摘要翻译：用于DNA核苷酸掺入事件的荧光和离子感应的装置，包括DNA核苷酸掺入结构，其被设计为具有结合到表面以将DNA核苷酸掺入其上的测序引物。至少一些具有荧光标记的DNA核苷酸。位于掺入结构附近的光电二极管和位于DNA核苷酸掺入结构附近的照明装置，以照射掺入到测序引物中的DNA核苷酸。照明装置在结合时激发荧光标签并且光电二极管定位为感测激发的荧光标签。离子感测装置位于DNA核苷酸掺入结构附近，包括金属氧化物薄膜晶体管，其栅极电耦合以接收指示由掺入DNA靶片段或测序引物的DNA核苷酸产生的离子发射的电信号。

9. 发明申请

WO2014093244A1 PIXELATED IMAGER WITH MOTFET AND PROCESS 审中-公开
标题翻译：像素图像与MOTFET和过程
公开(公告)号：WO2014093244A1
公开(公告)日：2014-06-19
申请号：PCT/US2013/073920
申请日：2013-12-09
申请人： CBRITE INC.
发明人： SHIEH, Chan-long , YU, Gang
IPC分类号： H01L31/036
CPC分类号： H01L31/20 , H01L27/1225 , H01L27/1463 , H01L27/14632 , H01L27/14663 , H01L27/14687 , H01L27/14692 , H01L31/0368 , H01L31/0376 , Y02E10/50
摘要： A method of fabricating a pixelated imager includes providing a substrate with bottom contact layer and sensing element blanket layers on the contact layer. The blanket layers are separated into an array of sensing elements by trenches isolating adjacent sensing elements. A sensing element electrode is formed adjacent each sensing element overlying a trench and defining a TFT. A layer of metal oxide semiconductor material is formed on a dielectric layer overlying the electrodes and on an exposed upper surface of the blanket layers defining the sensing element adjacent each TFT. A layer of metal is deposited on each TFT and separated into source/drain electrodes on opposite sides of the electrode.The metal forming one of the electrodes contacts the MOS material overlying the exposed surf ace of the semiconductor layer, whereby each sensing element in the array is electrically connected to the adjacent TFT by the MOS material.
摘要翻译：制造像素化成像器的方法包括在接触层上提供具有底部接触层和感测元件覆盖层的衬底。橡皮布层通过隔离相邻感测元件的沟槽分离成感测元件的阵列。感测元件电极邻近覆盖沟槽的每个感测元件形成并且限定TFT。一层金属氧化物半导体材料形成在覆盖电极的电介质层上，并且在覆盖层的暴露的上表面上形成与每个TFT相邻的感测元件。在每个TFT上沉积一层金属，并将其分离成电极的相对侧上的源/漏电极。形成电极之一的金属接触覆盖半导体层暴露的凸起的MOS材料，由此在阵列通过MOS材料电连接到相邻的TFT。

10. 发明申请

WO2014070576A2 LED DIE DISPERSAL IN DISPLAYS AND LIGHT PANELS WITH PRESERVING NEIGHBORING RELATIONSHIP 审中-公开
标题翻译：显示屏和LED面板中的LED指示灯保持相邻关系
公开(公告)号：WO2014070576A2
公开(公告)日：2014-05-08
申请号：PCT/US2013/066610
申请日：2013-10-24
申请人： CBRITE INC.
发明人： SHIEH, Chan-Long , YU, Gang
IPC分类号： H01L33/00 , H01L31/18
CPC分类号： H01L21/6836 , H01L21/67144 , H01L21/67721 , H01L21/68757 , H01L21/68778 , H01L25/042 , H01L25/0753 , H01L25/50 , H01L27/1222 , H01L27/1225 , H01L31/18 , H01L33/0095 , H01L33/44 , H01L33/58 , H01L33/62 , H01L2224/83 , H01L2224/95 , H01L2225/06527 , H01L2225/06555 , H01L2924/0002 , H01L2933/0025 , H01L2933/0058 , H01L2933/0066 , Y10T156/171 , H01L2924/00
摘要： A method of dispersing semiconductor chips from a wafer of semiconductor chips onto a substrate while preserving the neighboring relationship of each chip to each adjacent chip is disclosed. The method includes dispersing the wafer into sequential columns of semiconductor chips with a first pitch between columns while preserving the neighboring relationship and sequentially dispersing the columns of semiconductor chips into rows of individual chips with a second pitch between rows onto a substrate while preserving the neighboring relationship.
摘要翻译：公开了将半导体芯片从半导体芯片的晶片分散到基板上同时保持每个芯片与每个相邻芯片的相邻关系的方法。该方法包括将晶片分散在具有列之间的第一间距的顺序的半导体芯片列中，同时保持相邻关系，并将半导体芯片的列顺序地分散到具有行之间的第二间距的单个芯片行到基板上，同时保持相邻关系。

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