专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2022240477A1 IN SITU DAMAGE FREE ETCHING OF Ga 2O3 USING Ga FLUX FOR FABRICATING HIGH ASPECT RATIO 3D STRUCTURES 审中-公开
公开(公告)号：WO2022240477A1
公开(公告)日：2022-11-17
申请号：PCT/US2022/020143
申请日：2022-03-14
申请人： OHIO STATE INNOVATION FOUNDATION
发明人： KALARICKAL, Nidhin Kurian , FIEDLER, Andreas , RAJAN, Siddharth
IPC分类号： H01L21/02 , C23C16/40 , C23F1/12 , C30B23/04 , C30B23/06 , H01L21/033 , H01L21/465 , H01L29/66227
摘要： A method for using gallium beam flux in an ultra-low vacuum environment to etch Ga2O3 epilayer surfaces is provided. An Ga2O3 epilayer surface (105) is patterned by applying a SiO2 mask (107) that corresponds to a desired structure (810). The patterned surface is then placed in an ultra-low vacuum environment (130) and is heated to a very high temperature (820; 830). At the same time, a gallium flux is supplied to the patterned surface in the ultra-low vacuum environment (840). The gallium flux causes etching in the patterned surface that is not covered by the SiO2 mask. Using this method, sub-micron (~100 nm) three-dimensional (3D) structures like fins, trenches, and nano-pillars can be fabricated with vertical sidewalls.

2. 发明申请

WO2021024042A2 LIMITED DOSE AND ANGLE DIRECTED BEAM ASSISTED ALE AND ALD PROCESSES FOR LOCALIZED COATINGS ON NON-PLANAR SURFACES 审中-公开
公开(公告)号：WO2021024042A2
公开(公告)日：2021-02-11
申请号：PCT/IB2020/000673
申请日：2020-07-15
申请人： SEIDEL, Thomas, E.
发明人： CURRENT, Michael, I.
IPC分类号： H01L21/3065 , H01L21/3213 , H01L21/311 , H01L21/31116 , H01L21/31122 , H01L21/31144 , H01L21/32135 , H01L21/32136 , H01L21/465 , H01L29/785
摘要： Processes for the localized etching of films on the sidewalls of non-planar 3D features such as a trench or a FinFET array. The etch process has a first step of an angle-directed ion implant beam, with the beam being self-aligned onto a localized region on a sidewall feature, that functionalizes the region for a second step that etches the ion implanted region.

3. 发明申请

WO2013005155A3 APPARATUS FOR TREATING A WAFER-SHAPED ARTICLE 审中-公开
标题翻译：用于处理波浪形文章的设备
公开(公告)号：WO2013005155A3
公开(公告)日：2015-08-06
申请号：PCT/IB2012053350
申请日：2012-07-02
申请人： LAM RES AG , LAM RES CORP , HOHENWARTER KARL-HEINZ
发明人： HOHENWARTER KARL-HEINZ
IPC分类号： H01L21/465
CPC分类号： H01L21/6719 , H01L21/67115 , H01L21/67126
摘要： An apparatus for processing wafer-shaped articles comprises a closed process chamber, a chuck located within the closed process chamber, and at least one process liquid dispensing device disposed within the chamber. The closed process chamber comprises a lid that can be opened to position a wafer-shaped article within the closed process chamber. The lid incorporates a heater adapted to heat a wafer-shaped article positioned in the closed process chamber.
摘要翻译：用于处理晶片状物品的装置包括封闭的处理室，位于封闭处理室内的卡盘以及设置在该室内的至少一个处理液体分配装置。封闭的处理室包括可以打开以将晶片形物品定位在封闭的处理室内的盖子。盖子包括适于加热位于封闭处理室中的晶片状物品的加热器。

4. 发明申请

WO2014189681A2 STABLE HIGH MOBILITY MOTFT AND FABRICATION AT LOW TEMPERATURE 审中-公开
标题翻译：稳定的高移动性和低温制造
公开(公告)号：WO2014189681A2
公开(公告)日：2014-11-27
申请号：PCT/US2014/037191
申请日：2014-05-07
申请人： CBRITE INC.
发明人： SHIEH, Chan-long , YU, Gang , FOONG, Fatt , MUSOLF, Juergen
IPC分类号： H01L21/465
CPC分类号： H01L29/66969 , H01L21/02063 , H01L21/02565 , H01L21/02631 , H01L21/76805 , H01L21/76814 , H01L21/76895 , H01L27/1225 , H01L29/247 , H01L29/42384 , H01L29/517 , H01L29/518 , H01L29/66742 , H01L29/78603 , H01L29/78606 , H01L29/78618 , H01L29/78693 , H01L29/78696 , H01L2021/775
摘要： A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and in situ . The layer of amorphous metal oxide has a mobility above 40 cm 2 /Vs and a carrier concentration in a range of approximately 10 18 cm -3 to approximately 5xl0 19 cm -3 . Source/drain contacts are positioned on the protective layer and in electrical contact therewith.
摘要翻译：制造稳定的高迁移率无定形MOTFT的方法包括提供其上形成有栅极的基板和位于栅极上方的栅介质层的步骤。通过溅射将载流子传输结构沉积在栅极介电层上。载流子传输结构包括邻近栅极电介质的非晶高迁移率金属氧化物层，以及沉积在无氧和原位沉积的无定形高迁移率金属氧化物层上的相对惰性的材料保护层。无定形金属氧化物层的迁移率高于40cm 2 / Vs，载流子浓度在约1018cm-3至约5×1019cm-3的范围内。源极/漏极触点位于保护层上并与其电接触。

5. 发明申请

WO99004422A1 FUSION-BOND ELECTRICAL FEED-THROUGH 审中-公开
标题翻译：熔断器电子馈电
公开(公告)号：WO99004422A1
公开(公告)日：1999-01-28
申请号：PCT/US1998/014543
申请日：1998-07-16
IPC分类号： G01P15/125 , B81B3/00 , B81C1/00 , G01L9/00 , G01L9/12 , H01L21/762 , H01L21/764 , H01L21/768 , H01L23/10 , H01L29/84 , H01L21/465 , G01P15/08 , G01P15/13
CPC分类号： B81C1/00293 , B81B2207/092 , B81C1/00301 , B81C2203/019 , B81C2203/036 , G01L9/0042 , G01L9/0073 , H01L21/76251 , H01L21/764 , H01L21/76898 , H01L23/10 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device (400) has a flexible structure bonded to a semiconductor substructure to form a cavity. The flexible structure is bonded over a conducting feed-through without the feed-through interfering with a hermetic seal formed by bonding. One embodiment (400) of the device includes depressions (418) that contain edges of a diffused feed-through (410) so that imperfections at the edge (420) of the diffusion (408) do not interfere with bonding. The flexible structure is bonded to elevated areas (404, 406) thus hiding the imperfections. Another embodiment has either a surface or buried well in a semiconductor structure and extending from an active region in the cavity to a point outside the perimeter of the flexible structure. The well provides a conductive feed-through structure without creating imperfections that would interfere with the bonding that seals the cavity.
摘要翻译：半导体器件（400）具有结合到半导体子结构以形成空腔的柔性结构。柔性结构粘合在导电馈通上，而不会干扰通过接合形成的气密密封。该装置的一个实施例（400）包括包含漫射馈通（410）的边缘的凹陷（418），使得扩散（408）的边缘（420）处的缺陷不会妨碍接合。柔性结构结合到高架区域（404,406），从而隐藏缺陷。另一个实施例具有半导体结构中的表面或掩埋阱，并且从空腔中的有源区域延伸到柔性结构的周边外的点。该井提供导电的馈通结构，而不产生将干扰密封空腔的接合的缺陷。

6. 发明申请

WO98047172A1 PATTERN FILM REPAIR USING A GAS ASSISTED FOCUSED PARTICLE BEAM SYSTEM 审中-公开
标题翻译：使用气体辅助聚焦粒子束系统的图案电影修复
公开(公告)号：WO98047172A1
公开(公告)日：1998-10-22
申请号：PCT/US1998/007729
申请日：1998-04-15
IPC分类号： G03F1/74 , H01J37/305 , H01L21/027 , H01L21/302 , H01L21/3213 , H01L21/768 , H01L21/306 , H01L21/465
CPC分类号： H01L21/76892 , G03F1/74 , H01J37/3056 , H01J2237/31744 , H01J2237/31749 , H01L21/027 , H01L21/32131
摘要： The present invention generally provides methods for employing a focused particle beam system in the removal of an excess portion from a workpiece having an opaque film patterned on a substrate and more particularly provides methods of gas-assisted etching using an etching gas including bromine. One aspect of the invention provides a method including the steps of (i) mounting the workpiece on a movable stage capable of movement in the X and Y directions, (ii) scanning a selected surface area of a workpiece, having an opaque film patterned on a substrate, with a focused particle beam, (iii) detecting intensities of particles emitted from the workpiece as a result of the workpiece scanning step, (iv) determining a shape of the patterned film based on the detected particle intensities, (v) determining an excess portion of the patterned film based on the shape of the patterned film, (vi) etching the excess portion with the focused particle beam, and (vii) introducing an etching gas, concurrent with the etching step, in selected proximity to the excess portion. The etching gas includes bromine or a bromine-containing material. The etching gas can futher include water vapor.
摘要翻译：本发明通常提供了使用聚焦的粒子束系统从具有在衬底上图案化的不透明膜的工件去除多余部分的方法，更具体地提供使用包括溴的蚀刻气体的气体辅助蚀刻的方法。本发明的一个方面提供了一种方法，包括以下步骤：（i）将工件安装在能够在X和Y方向移动的可移动台上，（ii）扫描工件的选定表面区域，具有聚焦粒子束的衬底，（iii）检测作为工件扫描步骤的结果从工件发射的颗粒的强度，（iv）基于检测到的颗粒强度确定图案化膜的形状，（v）确定基于图案化膜的形状的图案化膜的过量部分，（vi）用聚焦粒子束蚀刻多余部分，以及（vii）与蚀刻步骤同时引入蚀刻气体，选择接近过量一部分。蚀刻气体包括溴或含溴材料。蚀刻气体还可以包括水蒸气。

7. 发明申请

WO9104573A3 EXCIMER LASER ABLATION METHOD AND APPARATUS FOR MICROCIRCUIT DEVICE FABRICATION 审中-公开
标题翻译：用于微循环设备制造的激光消融方法和设备
公开(公告)号：WO9104573A3
公开(公告)日：1991-05-02
申请号：PCT/US9004899
申请日：1990-08-29
申请人： HUGHES AIRCRAFT CO
发明人： BREWER PETER D , ZINCK JENNIFER J
IPC分类号： B23K26/00 , B23K26/06 , H01L21/302 , H01L21/36 , H01L21/428 , H01L21/461 , H01L21/465
CPC分类号： H01L21/461 , H01L21/428
摘要： A pulsed beam (14) from an excimer laser (10) is used for precision ablation of cadmium telluride (CdTe) and other material (16) to fabricate and delineate devices in electronic microcircuit structures. The fluence of the beam may be adjusted to selectively remove one constituent of the material (16), such as cadmium vs. tellurium, at a higher rate than the other constituent, while maintaining the integrity of the material surface. The beam may selectively remove an epitaxial layer of CdTe, CdZnTe, or HgCdTe from a GaAs substrate. The beam may be directed through a projection mask (32) and optical system (40) onto a material (34) to form an image for patterned ablation. The optical system (40) may focus an image of the mask on the material to form vertical sidewall patterns, or slightly defocus the image to form curved sidewall patterns and/or concave and convex lens structures for optical arrays.
摘要翻译：来自准分子激光器（10）的脉冲束（14）被用于精确烧蚀碲化镉（CdTe）和其他材料（16）以制造和描绘电子微电路结构中的器件。可以调节束的能量密度以在保持材料表面的完整性的同时，以比其他组分更高的速率选择性地去除材料（16）的一个组分，例如镉对碲。该束可以选择性地从GaAs衬底去除CdTe，CdZnTe或HgCdTe的外延层。该束可以通过投影掩模（32）和光学系统（40）被引导到材料（34）上以形成图案化消融的图像。光学系统（40）可以将掩模的图像聚焦在材料上以形成垂直侧壁图案，或者稍微散焦图像以形成用于光学阵列的弯曲侧壁图案和/或凹和凸透镜结构。

8. 发明申请

WO2022216727A1 ULTRAHIGH ASPECT RATIO NANOPOROUS AND NANOTEXTURED MICROSTRUCTURES WITH EXCEPTIONALLY HIGH SURFACE AREA PREPARED USING NANOPORE-MEDIATED METAL-ASSISTED CHEMICAL ETCHING 审中-公开
公开(公告)号：WO2022216727A1
公开(公告)日：2022-10-13
申请号：PCT/US2022/023511
申请日：2022-04-05
申请人： THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY OFFICE OF THE GENERAL COUNSEL
发明人： GARDNER, Donald, Stanley , SAKDINAWAT, Anne, Eugenie
IPC分类号： C23F1/02 , H01L21/027 , H01L21/3213 , H01L21/465
摘要： Semiconductor structures having high aspect ratio are provided. To make such structures, a new version of metal-assisted chemical etching (MACE) has been developed, where transport of the etchants to etch locations is via substrate porosity, instead of through the metal catalyst layer (as in conventional MACE). This approach provides high aspect ratio microstructures and nanostructuring with a hierarchical architecture, with the control of etch directionality achieved through the interplay of chemical, electrical and mechanical properties. Such structures have various applications, such as energy storage, x-ray optics etc. For energy storage, high aspect ratio structures are useful for increasing energy density in electrochemical capacitors. The side walls of these high aspect ratio structures are porous, and they can be coated with surface coatings to further increase electrochemical capacitor performance.

9. 发明申请

WO2021083943A1 METHOD OF MANUFACTURING A PHOTOVOLTAIC DEVICE 审中-公开
公开(公告)号：WO2021083943A1
公开(公告)日：2021-05-06
申请号：PCT/EP2020/080255
申请日：2020-10-28
申请人： CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE SA - RECHERCHE ET DÉVELOPPEMENT
发明人： FAES, Antonin , PAVIET-SALOMON, Bertrand , BADEL, Nicolas , CHAMPLIAUD, Jonathan , DESPEISSE, Matthieu , BALLIF, Christophe , ANDREATTA, Gaëlle
IPC分类号： H01L31/0224 , H01L31/05 , H01L31/068 , C25D5/02 , H01L21/465 , H01L51/44 , H01L51/00
摘要： Method of manufacturing a single-side-contacted photovoltaic device (1), comprising the steps of: a) providing a photovoltaically-active substrate (3) defining a plurality of alternating hole collecting zones (3a) and electron collecting zones (3b) arranged in parallel strips; b) depositing a conductive layer (5) across said zones; c) depositing at least one conductive track (9) extending along at least part of each of said zones (3a, 3b); d) selectively forming a dielectric layer (7) on each of said zones (3a, 3b), so as to leave an exposed area free of dielectric at an interface between adjacent zones (3a, 3b); e) etching said conductive layer (5) in said exposed areas; f) applying a plurality of interconnecting conductors (11a, 11b) so as to electrically interconnect at least a portion of said hole collecting zones (3a) with each other, and to electrically interconnect at least a portion of said electron collecting zones (3b) with each other.

10. 发明申请

WO2013072819A1 METHOD AND DEVICE FOR PROCESSING WAFER SHAPED ARTICLES 审中-公开
标题翻译：用于处理波形形状的方法和装置
公开(公告)号：WO2013072819A1
公开(公告)日：2013-05-23
申请号：PCT/IB2012/056255
申请日：2012-11-08
申请人： LAM RESEARCH AG , LAM RESEARCH CORPORATION , KINOSHITA, Kei , ENGESSER, Philipp
发明人： KINOSHITA, Kei , ENGESSER, Philipp
IPC分类号： H01L21/465
CPC分类号： H01L21/6838 , B25B5/061 , H01L21/68728 , Y10T29/49998
摘要： A method and device for treating a wafer-shaped article utilizes a novel clamping mechanism, which permits wafer shift to be performed with reduced wear to the chuck pins. A wafer shaped article is rotated on a spin chuck that has a plurality of pins positioned at a periphery of the wafer shaped article. The pins each have a head portion which, in a service position, extends radially inwardly of and above the wafer shaped article. Gas is supplied onto a surface of the wafer shaped article facing the spin chuck at a flow rate sufficient to displace the wafer shaped article upwardly into contact with the head portions of the pins. This serves to clamp the wafer shaped article against the head portions of the pins. However, the pins contact the wafer shaped article only on upwardly oriented wafer surfaces and the wafer shaped article is supported from below solely by the gas flow.
摘要翻译：用于处理晶片状制品的方法和装置利用了一种新颖的夹紧机构，其允许以较低的卡盘销磨损进行晶片移位。在旋转卡盘上旋转晶片成形制品，该旋转卡盘具有定位在晶片成形制品周边的多个销。每个销都具有头部，该头部在使用位置中延伸到晶片成形制品的径向内侧和上方。将气体以足以将晶片成形制品向上移动以与销头部接触的流量供给到面向旋转卡盘的晶片成形制品的表面上。这用于将晶片成形制品夹紧在销的头部上。然而，引脚仅在向上取向的晶片表面上接触晶片成形制品，并且晶片成形制品仅由气流从下方支撑。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式