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41. 发明申请

WO2011038229A3 HIGH STRENGTH BONDING AND COATING MIXTURE 审中-公开
标题翻译：高强度粘结和涂层混合物
公开(公告)号：WO2011038229A3
公开(公告)日：2011-08-18
申请号：PCT/US2010050200
申请日：2010-09-24
申请人： FERROTEC USA CORP , LEE SANG IN
发明人： LEE SANG IN
IPC分类号： C09J183/02 , C09D183/02 , H01L21/677
CPC分类号： C09J5/06 , C08G77/60 , C08K3/04 , C08K3/08 , C08K3/14 , C09D7/61 , C09D7/67 , C09D7/68 , C09D7/69 , C09D183/16 , C09J183/16 , H01L21/67306 , Y10T156/10 , C08K3/02
摘要： A mixture includes a silicon compound having a polycarbosilane backbone, and a powder having a plurality of individual powder grains, wherein each of the plurality of powder grains has a diameter substantially between 0.05 micrometers and 50 micrometers.
摘要翻译：混合物包括具有聚碳硅烷骨架的硅化合物和具有多个单独粉末颗粒的粉末，其中多个粉末颗粒中的每一个具有基本上在0.05微米和50微米之间的直径。

42. 发明申请

WO2010085081A2 ELECTRODE STRUCTURE, DEVICE COMPRISING THE SAME AND METHOD FOR FORMING ELECTRODE STRUCTURE 审中-公开
标题翻译：电极结构，包含该结构的器件和形成电极结构的方法
公开(公告)号：WO2010085081A2
公开(公告)日：2010-07-29
申请号：PCT/KR2010000360
申请日：2010-01-20
申请人： SYNOS TECHNOLOGY INC , LEE SANG IN
发明人： LEE SANG IN
IPC分类号： H01L31/042
CPC分类号： H01L21/02554 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/075 , H01L31/078 , H01L31/1884 , Y02E10/50
摘要： An electrode structure comprises a semiconductor junction comprising an n-type semiconductor layer and a p-type semiconductor layer; a hole exnihilation layer on the p-type semiconductor layer; and a transparent electrode layer on the hole exnihilation layer. The electrode structure further comprises a conductive layer between the hole exnihilation layer and the transparent electrode layer. In the electrode structure, one or more of the hole exnihilation layer, the conductive layer and the transparent electrode layer may be formed by an atomic layer deposition. In the electrode structure, a transparent electrode formed of a degenerated n-type oxide semiconductor does not come in direct contact with a p-type semiconductor, and thus, annihilation or recombination of holes generated in the p-type semiconductor cam be reduced, which increases the carrier generation efficiency. Further, the electric conductivity of the transparent electrode is increased by the conductive layer, which improves electrical characteristics of a device.
摘要翻译：一种电极结构，包括：半导体结，包括n型半导体层和p型半导体层; 在p型半导体层上的空穴溢出层; 以及在孔ex层上的透明电极层。该电极结构进一步包括位于孔外绝缘层和透明电极层之间的导电层。在电极结构中，空穴散发层，导电层和透明电极层中的一个或多个可以通过原子层沉积形成。在电极结构中，由退化的n型氧化物半导体形成的透明电极不会与p型半导体直接接触，并且因此可以减少在p型半导体凸轮中产生的空穴的湮灭或复合，提高载波生成效率。此外，透明电极的电导率通过导电层而增加，这提高了器件的电特性。

43. 发明申请

WO2004001808A3 METHOD AND SYSTEM FOR ATOMIC LAYER REMOVAL AND ATOMIC LAYER EXCHANGE 审中-公开
标题翻译：用于原子层去除和原子层交换的方法和系统
公开(公告)号：WO2004001808A3
公开(公告)日：2004-05-27
申请号：PCT/US0319982
申请日：2003-06-23
申请人： AVIZA TECH INC , KAPKIN KEREM , LEE SANG-IN
发明人： KAPKIN KEREM , LEE SANG-IN
IPC分类号： C23C16/455 , H01L21/28 , H01L21/311 , H01L21/314 , H01L21/316 , H01L21/768 , H01L29/51 , H01L21/461 , H01L21/31
CPC分类号： H01L21/28185 , C23C16/45525 , H01L21/02063 , H01L21/28194 , H01L21/28211 , H01L21/31116 , H01L21/31122 , H01L21/32135 , H01L21/76814 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method and system for atomic layer deposition and removal of a dielectric film are provided. The present invention comprises introducing a first reactant gas into a reactor to react with a first layer of the film to convert the first layer into a mono?layer of a solid compound; introducing a second reactant gas into the reactor to react with the mono?layer of the solid compound to form a gaseous compound; and removing the gaseous compound. Preferably, the mono?layer of the solid compound needs less energy to react with the second reactant gas than a next layer of the film underneath the mono?layer of the solid compound. In another aspect of the present invention a gas reactant having two or more chemical species is exposed to the film and a surface reaction occurs wherein certain of the chemical species in the gas reactant are exchanged with certain chemical species in the top atomic layer of the film.
摘要翻译：提供了用于原子层沉积和去除介电膜的方法和系统。本发明包括将第一反应物气体引入反应器中以与第一层膜反应以将第一层转化为固体化合物的单层; 将第二反应物气体引入反应器中以与固体化合物的单层反应以形成气态化合物; 并除去气态化合物。优选地，与固体化合物单层下面的膜的下一层相比，固体化合物的单层与第二反应气体反应需要更少的能量。在本发明的另一方面，具有两种或更多种化学物质的气体反应物暴露于膜并发生表面反应，其中气体反应物中的某些化学物质与膜的顶部原子层中的某些化学物质交换。

44. 发明申请

WO2004008827A2 ATOMIC LAYER DEPOSITION OF HIGH K DIELECTRIC FILMS 审中-公开
标题翻译：高K电介质膜的原子层沉积
公开(公告)号：WO2004008827A2
公开(公告)日：2004-01-29
申请号：PCT/US0322712
申请日：2003-07-21
申请人： ASML US INC , LEE SANG-IN , SENZAKI YOSHIHIDE
发明人： LEE SANG-IN , SENZAKI YOSHIHIDE
IPC分类号： C23C16/02 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/316
CPC分类号： C23C16/45529 , C23C16/0236 , C23C16/40 , H01L21/3141 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31691
摘要： A method of processing a semiconductor substrate includes reacting in a reactor a first reactant gas, evacuating the first reactant gas from the reactor, reacting a second reactant gas, and evacuating the second reactant gas. The reacting of the first reactant gas reacts the first reactant gas with an exposed surface of the semiconductor substrate in a reactor to convert the exposed surface into a solid mono-layer. The reacting of the second reactant gas reacts the second reactant gas with the solid mono-layer in the reactor to convert the solid mono-layer into a gaseous compound. The evacuating of the second reactant gas also evacuates the gaseous compound from the reactor.
摘要翻译：处理半导体衬底的方法包括在反应器中使第一反应物气体反应，从反应器排出第一反应物气体，使第二反应物气体反应，并排空第二反应物气体。第一反应气体的反应在反应器中使第一反应气体与半导体衬底的暴露表面反应以将暴露的表面转化为固体单层。第二反应气体的反应使第二反应气体与反应器中的固体单层反应以将固体单层转化为气态化合物。第二反应气体的排空也从反应器中排出气态化合物。

45. 发明申请

WO2018187177A1 DEPOSITING OF MATERIAL BY SPRAYING PRECURSOR USING SUPERCRITICAL FLUID 审中-公开
公开(公告)号：WO2018187177A1
公开(公告)日：2018-10-11
申请号：PCT/US2018/025441
申请日：2018-03-30
申请人： LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C4/04 , B05D1/02
摘要： Embodiments relate to surface treating a substrate, spraying precursor onto the substrate using supercritical carrier fluid, and post-treating the substrate sprayed with the precursor to form a layer with nanometer thickness of material on the substrate. A spraying assembly for spraying the precursor includes one or more spraying modules and one or more radical injectors at one or more sides of the spraying module. A differential spread mechanism is provided between the spraying module and the radical injectors to inject spread gas that isolates the sprayed precursor and radicals generated by the radical injectors. As relative movement between the substrate and the spraying assembly is made, portions of the substrate is exposed to first radicals, sprayed with precursors either one of the spraying modules or both spraying modules using supercritical carrier fluid, and then exposed to second radicals again.

46. 发明申请

WO2012054538A1 FORMATION OF BARRIER LAYER ON DEVICE USING ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：使用原子层沉积在器件上形成障碍层
公开(公告)号：WO2012054538A1
公开(公告)日：2012-04-26
申请号：PCT/US2011/056785
申请日：2011-10-18
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/44
CPC分类号： H01L23/3192 , C23C16/042 , C23C16/45551 , H01L2924/0002 , H01L2924/00
摘要： The configuration of one or more barrier layers for encapsulating a device is controlled by setting parameters of atomic layer deposition (ALD). A substrate formed with the device is placed on a susceptor and exposed to multiple cycles of source precursor gas and reactant precursor gas injected by reactors of a deposition device. By adjusting one or more of (i) the relative speed between the susceptor and the reactors, (ii) configuration of the reactors, and (iii) flow rates of the gases injected by the reactors, the configuration of the layers deposited on the device can be controlled. By controlling the configuration of the deposited layers, defects in the deposited layers can be prevented or reduced.
摘要翻译：通过设置原子层沉积（ALD）的参数来控制用于封装器件的一个或多个阻挡层的构造。用该装置形成的衬底放置在基座上并暴露于通过沉积装置的反应器注入的源前体气体和反应物前体气体的多个循环。通过调整（i）基座和反应器之间的相对速度，（ii）反应器的构造和（iii）由反应器注入的气体的流速，沉积在装置上的层的配置的一个或多个可以控制。通过控制沉积层的结构，可以防止或减少沉积层中的缺陷。

47. 发明申请

WO2012015744A1 ROTATING REACTOR ASSEMBLY FOR DEPOSITING FILM ON SUBSTRATE 审中-公开
标题翻译：旋转反应器组件用于在基板上沉积膜
公开(公告)号：WO2012015744A1
公开(公告)日：2012-02-02
申请号：PCT/US2011/045199
申请日：2011-07-25
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/00
CPC分类号： C23C16/45551 , C23C16/45536 , C23C16/54
摘要： A rotating reactor assembly includes an injector rotor comprising a channel extending in a direction parallel to a rotational axis of the injector rotor and at least one injection hole connected to the channel; and an intake port through which a material is introduced. As the injector rotor rotates, the channel is timely and/or periodically connected to the intake port such that the material is injected to a substrate through the at least one injection hole.
摘要翻译：旋转反应器组件包括喷射器转子，其包括在平行于喷射器转子的旋转轴线的方向上延伸的通道和连接到通道的至少一个喷射孔; 以及引入材料的进气口。当喷射器转子旋转时，通道及时地和/或周期性地连接到进气口，使得材料通过至少一个喷射孔喷射到基底。

48. 发明申请

WO2010095901A2 METHOD FOR FORMING THIN FILM USING RADICALS GENERATED BY PLASMA 审中-公开
标题翻译：用等离子体产生自由基形成薄膜的方法
公开(公告)号：WO2010095901A2
公开(公告)日：2010-08-26
申请号：PCT/KR2010/001076
申请日：2010-02-22
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang In
发明人： LEE, Sang In
IPC分类号： H01L21/205
CPC分类号： C23C16/45538 , C23C16/06 , C23C16/34 , C23C16/45517 , C23C16/45523 , C23C16/45551 , C23C16/45563 , C23C16/50 , C23C16/545
摘要： A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.
摘要翻译：用等离子体产生的自由基形成薄膜的方法可包括使用等离子体产生反应物前体的自由基; 通过将基底暴露于反应物前体和源前体的基团的混合物，在基底上形成第一薄膜; 将衬底暴露于源前体; 以及通过将衬底暴露于反应物前体和源前体的自由基的混合物而在衬底上形成第二薄膜。由于衬底在形成第一薄膜和形成第二薄膜之间暴露于源前体，所以可以改善沉积速率。

49. 发明申请

WO2006080782A1 METHOD OF DEPOSITING THIN LAYER USING ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：使用原子沉积沉积薄层的方法
公开(公告)号：WO2006080782A1
公开(公告)日：2006-08-03
申请号：PCT/KR2006/000169
申请日：2006-01-17
申请人： IPS LTD. , KIM, Soo-Hyun , LEE, Sahng-Kyu , SEO, Tae-Wook , LEE, Sang-In , CHANG, Ho-Seung
发明人： KIM, Soo-Hyun , LEE, Sahng-Kyu , SEO, Tae-Wook , LEE, Sang-In , CHANG, Ho-Seung
IPC分类号： H01L21/205
CPC分类号： H01L21/28562 , C23C16/45531 , C23C16/45534 , C23C16/45542 , C23C16/515 , H01L21/28568 , H01L21/318 , H01L21/3185
摘要： Provided is a method of depositing a thin layer using a plasma atomic layer deposition (ALD) process. The method includes feeding one of an organic compound source containing metal atoms and an inorganic compound source containing metal atoms into a chamber in which a wafer is loaded; purging the source from the chamber; feeding a first reactant into the chamber; purging an unreacted portion of the first reactant and by-products produced in the reaction of the source from the chamber; applying plasma while feeding a second reactant into the chamber to improve the quality of the thin layer; and purging an unreacted portion of the second reactant and by-products produced in the reaction of the source and the first reactant from the chamber. A cycle including feeding the source, purging the source, feeding the first reactant, purging the unreacted portion of the first reactant and by-products, applying the plasma while feeding the second reactant, and purging the unreacted portion of the second reactant and by-products is repeated until the thin layer is deposited on the wafer.
摘要翻译：提供了使用等离子体原子层沉积（ALD）工艺沉积薄层的方法。该方法包括将含有金属原子的有机化合物源和含有金属原子的无机化合物源中的一种进料到其中装载晶片的室中; 从房间清除源头; 将第一反应物进料到所述室中; 吹扫所述第一反应物的未反应部分和在所述源的反应中产生的副产物; 在将第二反应物进料到室中时施加等离子体以改善薄层的质量; 以及从所述室中吹扫所述第二反应物的未反应部分和在所述源和所述第一反应物的反应中产生的副产物。循环，包括进料源，净化源，进料第一反应物，净化第一反应物和副产物的未反应部分，在供给第二反应物的同时施加等离子体，以及除去第二反应物的未反应部分，重复产物，直到薄层沉积在晶片上。

50. 发明申请

WO2005034196A9 ATOMIC LAYER DEPOSITION OF HAFNIUM-BASED HIGH-K DIELECTRIC 审中-公开
标题翻译：基于高压电介质的原子层沉积
公开(公告)号：WO2005034196A9
公开(公告)日：2005-07-28
申请号：PCT/US2004032351
申请日：2004-09-30
申请人： AVIZA TECH INC , LEE SANG-IN , OWYANG JON S , SENZAKI YOSHIHIDE , HELMS AUBREY L , KAPKIN KEREM
发明人： LEE SANG-IN , OWYANG JON S , SENZAKI YOSHIHIDE , HELMS AUBREY L , KAPKIN KEREM
IPC分类号： C23C16/02 , C23C16/40 , C23C16/42 , C23C16/455 , C30B25/00 , H01L20060101 , H01L
CPC分类号： C23C16/45525 , C23C16/0272 , C23C16/401 , C23C16/405 , C23C16/42 , C23C16/45553 , C30B25/165 , C30B29/16 , H01L21/3141 , H01L21/31645
摘要： A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.
摘要翻译：提供了一种沉积铪基电介质膜的方法。该方法包括使用臭氧的原子层沉积和包含铪前体的一种或多种反应物。还提供了半导体器件。该器件包括衬底，形成在衬底顶上的基于铪的电介质层以及形成在衬底和铪基电介质层之间的界面层，其中界面层包含二氧化硅并具有晶体结构。

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