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1. 发明申请

WO2004017377A2 ATOMIC LAYER DEPOSITION OF HIGH K METAL OXIDES 审中-公开
标题翻译：高K金属氧化物的原子层沉积
公开(公告)号：WO2004017377A2
公开(公告)日：2004-02-26
申请号：PCT/US0325738
申请日：2003-08-18
申请人： ASML US INC , INTEGRATED PROCESS SYSTEMS LTD , LEE SANG-IN , SENZAKI YOSHIHIDE , LEE SANG-KYOO
发明人： LEE SANG-IN , SENZAKI YOSHIHIDE , LEE SANG-KYOO
IPC分类号： H01L27/04 , C23C16/40 , C23C16/44 , C23C16/455 , H01L20060101 , H01L21/20 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/822 , H01L29/78 , H01L
CPC分类号： H01L21/3141 , C23C16/405 , C23C16/45531 , C23C16/45553 , H01L21/28194 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L29/517
摘要： The present invention relates to the atomic layer deposition ("ALD") of high k dielectric layers of metal oxides containing Group 4 metals, including hafnium oxide, zirconium oxide, and titanium oxide. More particularly, the present invention relates to the ALD formation of Group 4 metal oxide films using an metal alkyl amide as a metal organic precursor and ozone as a co-reactant.
摘要翻译：本发明涉及包含第4族金属（包括氧化铪，氧化锆和氧化钛）的高k金属氧化物介电层的原子层沉积（“ALD”）。更具体地说，本发明涉及使用金属烷基酰胺作为金属有机前体和臭氧作为共反应物的第4族金属氧化物膜的ALD形成。

2. 发明申请

WO2004008827A2 ATOMIC LAYER DEPOSITION OF HIGH K DIELECTRIC FILMS 审中-公开
标题翻译：高K电介质膜的原子层沉积
公开(公告)号：WO2004008827A2
公开(公告)日：2004-01-29
申请号：PCT/US0322712
申请日：2003-07-21
申请人： ASML US INC , LEE SANG-IN , SENZAKI YOSHIHIDE
发明人： LEE SANG-IN , SENZAKI YOSHIHIDE
IPC分类号： C23C16/02 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/316
CPC分类号： C23C16/45529 , C23C16/0236 , C23C16/40 , H01L21/3141 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31691
摘要： A method of processing a semiconductor substrate includes reacting in a reactor a first reactant gas, evacuating the first reactant gas from the reactor, reacting a second reactant gas, and evacuating the second reactant gas. The reacting of the first reactant gas reacts the first reactant gas with an exposed surface of the semiconductor substrate in a reactor to convert the exposed surface into a solid mono-layer. The reacting of the second reactant gas reacts the second reactant gas with the solid mono-layer in the reactor to convert the solid mono-layer into a gaseous compound. The evacuating of the second reactant gas also evacuates the gaseous compound from the reactor.
摘要翻译：处理半导体衬底的方法包括在反应器中使第一反应物气体反应，从反应器排出第一反应物气体，使第二反应物气体反应，并排空第二反应物气体。第一反应气体的反应在反应器中使第一反应气体与半导体衬底的暴露表面反应以将暴露的表面转化为固体单层。第二反应气体的反应使第二反应气体与反应器中的固体单层反应以将固体单层转化为气态化合物。第二反应气体的排空也从反应器中排出气态化合物。

3. 发明申请

WO2004017383A2 LOW TERMPERATURE DEPOSITION OF SILICON OXIDES AND OXYNITRIDES 审中-公开
标题翻译：氧化硅和氧化亚铁的低温沉积
公开(公告)号：WO2004017383A2
公开(公告)日：2004-02-26
申请号：PCT/US0326083
申请日：2003-08-18
申请人： ASML US INC , INTEGRATED PROCESS SYSTEMS LTD , SENZAKI YOSHIHIDE , LEE SANG-IN , LEE SANG-KYOO
发明人： SENZAKI YOSHIHIDE , LEE SANG-IN , LEE SANG-KYOO
IPC分类号： H01L21/205 , C23C16/30 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/316 , H01L21/318 , H01L
CPC分类号： C23C16/45525 , C23C16/308 , C23C16/401 , C23C16/45531 , C23C16/45553 , H01L21/0214 , H01L21/02164 , H01L21/02219 , H01L21/02271 , H01L21/0228 , H01L21/3141 , H01L21/3145 , H01L21/31612
摘要： The present invention relates to low temperature (i.e., less than about 450 DEG C) chemical vapor deposition (CVD) and low temperature atomic layer deposition (ALD) processes for forming silicon oxide and/or silicon oxynitride derived from silicon organic precursors and ozone. The processes of the invention provide good step coverage. The invention can be utilized to deposit both high-k and low-k dielectrics.
摘要翻译：本发明涉及用于形成由硅有机前体和臭氧衍生的氧化硅和/或氮氧化硅的低温（即低于约450℃）化学气相沉积（CVD）和低温原子层沉积（ALD）工艺。本发明的方法提供了良好的阶梯覆盖。本发明可以用来沉积高k和低k电介质。

4. 发明申请

WO2004001809A2 METHOD FOR ENERGY-ASSISTED ATOMIC LAYER DEPOSITON AND REMOVAL 审中-公开
标题翻译：用于能量辅助原子层沉积和去除的方法
公开(公告)号：WO2004001809A2
公开(公告)日：2003-12-31
申请号：PCT/US0319984
申请日：2003-06-23
申请人： ASML US INC , HELMS JR AUBREY L , KAPIN KEREM , LEE SANG-IN , SENZAKI YOSHIHIDE
发明人： HELMS JR AUBREY L , KAPIN KEREM , LEE SANG-IN , SENZAKI YOSHIHIDE
IPC分类号： H01L21/302 , C23C16/44 , C23C16/455 , C23C16/48 , H01L21/314 , H01L21/316 , H01L
CPC分类号： H01L21/3141 , C23C16/45536 , C23C16/45542 , C23C16/482 , H01L21/31645
摘要： A method for energy-assisted atomic layer deposition and removal of a dielectric film are provided. In one embodiment a substrate is placed into a reaction chamber and a gaseous precursor is introduced into the reaction chamber. Energy is provide by a pulse of electromagnetic radiation which forms radical species of the gaseous precursor. The radical species react with the surface of the substrate to form a radical terminated surface on the substrate. The reaction chamber is purged and a second gaseous precursor is introduced. A second electromagnetic radiation pulse is initiated and forms second radical species. The second radical species of the second gas react with the surface to form a film on the substrate. Alternately, the gaseous species can be chosen to produce radicals that result in the removal of material from the surface of the substrate.
摘要翻译：提供了一种用于能量辅助原子层沉积和去除电介质膜的方法。在一个实施方案中，将基底置于反应室中，并将气态前体引入反应室。通过电磁辐射的脉冲提供能量，其形成气态前体的自由基物质。自由基物质与基底的表面反应以在基底上形成基团封端的表面。吹扫反应室，并引入第二气态前体。启动第二电磁辐射脉冲并形成第二自由基物质。第二气体的第二种类物质与表面反应以在基材上形成膜。或者，可以选择气态物质以产生导致从衬底表面去除材料的自由基。

5. 发明申请

WO2004010469A3 ATOMIC LAYER DEPOSITION OF MULTI-METALLIC PRECURSORS 审中-公开
标题翻译：原子层沉积多金属前驱体
公开(公告)号：WO2004010469A3
公开(公告)日：2004-07-08
申请号：PCT/US0322236
申请日：2003-07-16
申请人： AVIZA TECH INC , SENZAKI YOSHIHIDE , LEE SANG-IN
发明人： SENZAKI YOSHIHIDE , LEE SANG-IN
IPC分类号： C23C16/455 , C23C16/30 , C23C16/34 , C23C16/40 , C23C16/44 , H01L21/283 , H01L21/285 , H01L21/314 , H01L21/316 , H01L21/318 , H01L29/78 , H01L21/31 , C23C16/00
CPC分类号： H01L21/3141 , C23C16/308 , C23C16/34 , C23C16/401 , C23C16/45531 , C23C16/45553 , H01L21/28562
摘要： Atomic layer deposition methods for depositing conformal homogeneous multi-component films on substrates are provided. In one method, a pulse of multi-metallic molecular precursor is introduced into a deposition chamber where a substrate is located. The multi-metallic molecular precursor contains the metallic elements necessary to form a mono-layer of the multi-metallic film. In another method, a mixture of two or more metallic precursors is pulsed into a deposition chamber where a substrate is located. The mixture of metallic precursors contains the metallic elements necessary to form a mono-layer of the multi-metallic film. In both methods, subsequent reactants are pulsed into the chamber to convert the precursors into the desired mono-layer. The cycle is repeated as many times as necessary to achieve a film of desired thickness. Illustrative films that may be formed by these processes include metallic alloy films, multi-metallic oxide films, multi-metallic nitride films and multi-metallic oxynitride films. By introducing the multiple metallic components in a single pulse in per cycle, throughput is increased. In addition, by introducing the multiple metallic components in a single pulse, a homogeneous film is formed that does not require subsequent annealing.
摘要翻译：提供了用于在基板上沉积共形均匀多组分膜的原子层沉积方法。在一种方法中，将多金属分子前体的脉冲引入到其中定位衬底的沉积室中。多金属分子前体含有形成多金属膜单层所需的金属元素。在另一种方法中，将两种或更多种金属前体的混合物脉冲进入其中定位衬底的沉积室。金属前体的混合物含有形成多金属膜单层所需的金属元素。在两种方法中，随后的反应物被脉冲进入室中以将前体转化成所需的单层。根据需要重复该循环次数以获得所需厚度的膜。可以通过这些方法形成的说明性的膜包括金属合金膜，多金属氧化物膜，多金属氮化物膜和多金属氧氮化物膜。通过在每个循环中以单个脉冲引入多个金属组分，生产量增加。此外，通过在单个脉冲中引入多个金属成分，形成均匀的膜，其不需要随后的退火。

6. 发明申请

WO2005034196A9 ATOMIC LAYER DEPOSITION OF HAFNIUM-BASED HIGH-K DIELECTRIC 审中-公开
标题翻译：基于高压电介质的原子层沉积
公开(公告)号：WO2005034196A9
公开(公告)日：2005-07-28
申请号：PCT/US2004032351
申请日：2004-09-30
申请人： AVIZA TECH INC , LEE SANG-IN , OWYANG JON S , SENZAKI YOSHIHIDE , HELMS AUBREY L , KAPKIN KEREM
发明人： LEE SANG-IN , OWYANG JON S , SENZAKI YOSHIHIDE , HELMS AUBREY L , KAPKIN KEREM
IPC分类号： C23C16/02 , C23C16/40 , C23C16/42 , C23C16/455 , C30B25/00 , H01L20060101 , H01L
CPC分类号： C23C16/45525 , C23C16/0272 , C23C16/401 , C23C16/405 , C23C16/42 , C23C16/45553 , C30B25/165 , C30B29/16 , H01L21/3141 , H01L21/31645
摘要： A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.
摘要翻译：提供了一种沉积铪基电介质膜的方法。该方法包括使用臭氧的原子层沉积和包含铪前体的一种或多种反应物。还提供了半导体器件。该器件包括衬底，形成在衬底顶上的基于铪的电介质层以及形成在衬底和铪基电介质层之间的界面层，其中界面层包含二氧化硅并具有晶体结构。

7. 发明申请

WO2005034196A2 ATOMIC LAYER DEPOSITION OF HAFNIUM-BASED HIGH-K DIELECTRIC 审中-公开
标题翻译：铪基高K电介质的原子层沉积
公开(公告)号：WO2005034196A2
公开(公告)日：2005-04-14
申请号：PCT/US2004032351
申请日：2004-09-30
申请人： AVIZA TECH INC , LEE SANG-IN , OWYANG JON S , SENZAKI YOSHIHIDE , HELMS AUBREY L , KAPKIN KEREM
发明人： LEE SANG-IN , OWYANG JON S , SENZAKI YOSHIHIDE , HELMS AUBREY L , KAPKIN KEREM
IPC分类号： C23C16/02 , C23C16/40 , C23C16/42 , C23C16/455 , C30B25/00 , H01L20060101 , H01L
CPC分类号： C23C16/45525 , C23C16/0272 , C23C16/401 , C23C16/405 , C23C16/42 , C23C16/45553 , C30B25/165 , C30B29/16 , H01L21/3141 , H01L21/31645
摘要： A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.
摘要翻译：提供了一种沉积铪基电介质膜的方法。该方法包括使用臭氧和包含铪前体的一种或多种反应物的原子层沉积。还提供了半导体器件。该器件包括衬底，形成在衬底顶上的铪基电介质层以及形成在衬底和铪基电介质层之间的界面层，其中界面层包含二氧化硅并具有晶体结构。

8. 发明申请

WO2004001809A8 METHOD FOR ENERGY-ASSISTED ATOMIC LAYER DEPOSITION AND REMOVAL 审中-公开
标题翻译：用于能量辅助原子层沉积和去除的方法
公开(公告)号：WO2004001809A8
公开(公告)日：2004-05-13
申请号：PCT/US0319984
申请日：2003-06-23
申请人： AVIZA TECH INC , HELMS JR AUBREY L , KAPKIN KEREM , LEE SANG-IN , SENZAKI YOSHIHIDE
发明人： HELMS JR AUBREY L , KAPKIN KEREM , LEE SANG-IN , SENZAKI YOSHIHIDE
IPC分类号： H01L21/302 , C23C16/44 , C23C16/455 , C23C16/48 , H01L21/314 , H01L21/316
CPC分类号： H01L21/3141 , C23C16/45536 , C23C16/45542 , C23C16/482 , H01L21/31645
摘要： A method for energy-assisted atomic layer deposition and removal of a dielectric film are provided. In one embodiment a substrate (14) is placed into a reaction chamber (10) and a gaseous precursor is introduced into the reaction chamber (10). Energy is provide by a pulse of electromagnetic radiation which forms radical species of the gaseous precursor. The radical species react with the surface of the substrate (14) to form a radical terminated surface on the substrate (14). The reaction chamber (10) is purged and a second gaseous precursor is introduced. A second electromagnetic radiation pulse is initiated and forms second radical species. The second radical species of the second gas react with the surface to form a film on the substrate (14). Alternately, the gaseous species can be chosen to produce radicals that result in the removal of material from the surface of the substrate (14).
摘要翻译：提供了一种用于能量辅助原子层沉积和去除电介质膜的方法。在一个实施例中，将衬底（14）放置在反应室（10）中，并将气态前体引入反应室（10）。通过电磁辐射的脉冲提供能量，其形成气态前体的自由基物质。自由基物质与基材（14）的表面反应以在基材（14）上形成基团封端的表面。吹扫反应室（10）并引入第二气态前体。启动第二电磁辐射脉冲并形成第二自由基物质。第二气体的第二自由基物质与表面反应以在基底（14）上形成膜。或者，可以选择气态物质以产生导致从衬底（14）的表面去除材料的自由基。

9. 发明申请

WO2005034195A3 GROWTH OF HIGH-K DIELECTRICS BY ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：通过原子层沉积生长高K电介质
公开(公告)号：WO2005034195A3
公开(公告)日：2006-02-16
申请号：PCT/US2004032263
申请日：2004-09-30
申请人： AVIZA TECH INC , SENZAKI YOSHIHIDE , LEE SANG-IN , AL-LAMI SATTAR
发明人： SENZAKI YOSHIHIDE , LEE SANG-IN , AL-LAMI SATTAR
IPC分类号： C23C16/40 , C23C16/455 , H01L20060101 , H01L21/314 , H01L21/316 , H01L21/44 , H01L21/31
CPC分类号： C23C16/45527 , C23C16/403 , C23C16/405 , C23C16/45529 , C23C16/45531 , H01L21/02178 , H01L21/02181 , H01L21/0228 , H01L21/02337 , H01L21/3141 , H01L21/3162 , H01L21/31645
摘要： In general, the present invention provides a method of depositing high -k dielectric films or layers, such as but not limited to high-k gate dielectric films. In one embodiment, atomic layer deposition (ALD) cycles are carried out where ozone is selectively conveyed to a chamber in separate cycles to form a metal oxide layer on the surface of a substrate where the metal oxide layer has an interfacial oxide layer of minimal thickness.
摘要翻译：通常，本发明提供了沉积高k电介质膜或层的方法，例如但不限于高k栅介质膜。在一个实施方案中，进行原子层沉积（ALD）循环，其中臭氧被选择性地以单独的循环传送到室，以在衬底的表面上形成金属氧化物层，其中金属氧化物层具有最小厚度的界面氧化物层。

10. 发明申请

WO2004010466A3 METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND ATOMIC LAYER DEPOSITION OF METAL OXYNITRIDE AND METAL SILICON OXYNITRIDE 审中-公开
标题翻译：金属有机化学气相沉积和金属氧化物和金属氧化硅的原子层沉积
公开(公告)号：WO2004010466A3
公开(公告)日：2004-04-29
申请号：PCT/US0322060
申请日：2003-07-16
申请人： AVIZA TECH INC , SENZAKI YOSHIHIDE , LEE SANG-IN
发明人： SENZAKI YOSHIHIDE , LEE SANG-IN
IPC分类号： H01L27/04 , C23C16/30 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L35/24 , H01L21/44
CPC分类号： C23C16/308 , H01L21/3141 , H01L21/3143 , H01L21/3144 , H01L21/31645
摘要： The invention is directed to gate and capacitor dielectrics for use in making advanced high-k stack structures (100). According to the invention, a metal alkyamide is used in a MOCVD or ALD process to create metal oxynitride or metal silicon oxynitride dielectric film (120). The metal oxynitride or metal silicon oxynitride films can be positioned between a silicon substrate (110) and a doped polycrystalline silicone (Poly Si) or a metal electrode layer (130).
摘要翻译：本发明涉及用于制造先进的高k堆叠结构（100）的栅极和电容器电介质。根据本发明，在MOCVD或ALD工艺中使用金属烷酰胺以产生金属氧氮化物或金属氮氧化硅电介质膜（120）。金属氧氮化物或金属氮氧化硅膜可以位于硅衬底（110）和掺杂多晶硅（Poly Si）或金属电极层（130）之间。

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