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1. 发明申请

WO2012112795A1 ENHANCED DEPOSITION OF LAYER ON SUBSTRATE USING RADICALS 审中-公开
标题翻译：使用放射线对基板上的层进行增强沉积
公开(公告)号：WO2012112795A1
公开(公告)日：2012-08-23
申请号：PCT/US2012/025483
申请日：2012-02-16
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C30B23/00
CPC分类号： C23C16/45534 , B05D1/36 , B05D1/38 , B05D1/60 , B05D1/62 , C23C16/345 , C23C16/45517 , C23C16/45553 , C23C16/513
摘要： Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.
摘要翻译：实施例涉及在不同的沉积过程阶段使用自由基。可以通过在远离衬底的电抗器中的电极上施加电压来产生自由基。在分子层沉积（MLD），原子层沉积（ALD）和化学气相沉积（CVD）的不同阶段将基团注入到衬底上，以改善沉积层的特性，从而能够沉积不可行的材料和/或增加沉积速率。用于产生自由基的气体可包括惰性气体和其它气体。基团可以分解前体，活化沉积层的表面或引起沉积的分子之间的交联。

2. 发明申请

WO2012112373A1 COMBINED INJECTION MODULE FOR SEQUENTIALLY INJECTING SOURCE PRECURSOR AND REACTANT PRECURSOR 审中-公开
标题翻译：用于连续注射源前体和反应物前体的组合注射模块
公开(公告)号：WO2012112373A1
公开(公告)日：2012-08-23
申请号：PCT/US2012/024451
申请日：2012-02-09
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： H01L21/31
CPC分类号： C23C16/45548 , C23C16/403 , C23C16/4412
摘要： Performing atomic layer deposition using a combined injector that sequentially injects source precursor and reactant precursor onto a substrate. The source precursor is injected into the injector via a first channel, injected onto the substrate and then discharged through a first exhaust portion. The reactant precursor is then injected into the injector via a second channel separate from the first channel, injected onto the substrate and then discharged through a second exhaust portion separate from the first exhaust portion. After injecting the source precursor or the reactant precursor, a purge gas may be injected into the injector and discharged to remove any source precursor or reactant precursor remaining in paths from the first or second channel to the first or second exhaust portion.
摘要翻译：使用将源前体和反应物前体依次注入到基底上的组合注射器进行原子层沉积。源前体经由第一通道注入注射器，注射到基底上，然后通过第一排气部分排出。然后将反应物前体经由与第一通道分离的第二通道注入到注射器中，注入到基底上，然后通过与第一排气部分分离的第二排气部分排出。在注入源前体或反应物前体之后，可将吹扫气体注入到喷射器中并排出以除去保留在从第一或第二通道到第一或第二排气部分的路径中的任何源前体或反应物前体。

3. 发明申请

WO2011041255A1 VAPOR DEPOSITION REACTOR FOR FORMING THIN FILM ON CURVED SURFACE 审中-公开
标题翻译：用于在弯曲表面形成薄膜的蒸气沉积反应器
公开(公告)号：WO2011041255A1
公开(公告)日：2011-04-07
申请号：PCT/US2010/050358
申请日：2010-09-27
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/455
CPC分类号： C23C16/045 , C23C16/00 , C23C16/40 , C23C16/403 , C23C16/45542 , C23C16/45551 , C23C16/45553 , C23C16/45574 , C23C16/4558 , C23C16/545
摘要： A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes first to third portions arranged along an arc of a circle. The first portion includes at least one first injection portion for injecting a material to a recess in the first portion. The second portion is adjacent to the first portion and has a recess communicatively connected to the recess of the first portion. The third portion is adjacent to the second portion and has a recess communicatively connected to the recess of the second portion and an exhaust portion for discharging the material from the vapor deposition reactor.
摘要翻译：蒸镀反应器及薄膜形成方法。气相沉积反应器包括沿圆弧排列的第一至第三部分。第一部分包括用于将材料注射到第一部分中的凹部中的至少一个第一注射部分。第二部分与第一部分相邻，并具有与第一部分的凹部通信连接的凹部。第三部分与第二部分相邻并且具有与第二部分的凹部连通的凹部和用于从气相沉积反应器排出材料的排气部分。

4. 发明申请

WO2011038229A2 HIGH STRENGTH BONDING AND COATING MIXTURE 审中-公开
标题翻译：高强度粘结和涂层混合物
公开(公告)号：WO2011038229A2
公开(公告)日：2011-03-31
申请号：PCT/US2010/050200
申请日：2010-09-24
申请人： FERROTEC (USA) CORPORATION , LEE, Sang In
发明人： LEE, Sang In
IPC分类号： C09J183/02 , C09D183/02 , H01L21/677
CPC分类号： C09J5/06 , C08G77/60 , C08K3/04 , C08K3/08 , C08K3/14 , C09D7/61 , C09D7/67 , C09D7/68 , C09D7/69 , C09D183/16 , C09J183/16 , H01L21/67306 , Y10T156/10 , C08K3/02
摘要： A mixture includes a silicon compound having a polycarbosilane backbone, and a powder having a plurality of individual powder grains, wherein each of the plurality of powder grains has a diameter substantially between 0.05 micrometers and 50 micrometers.
摘要翻译：混合物包括具有聚碳硅烷骨架的硅化合物和具有多个单独的粉末颗粒的粉末，其中多个粉末颗粒中的每一个具有基本上在0.05微米和50微米之间的直径。

5. 发明申请

WO2010085081A3 ELECTRODE STRUCTURE, DEVICE COMPRISING THE SAME AND METHOD FOR FORMING ELECTRODE STRUCTURE 审中-公开
公开(公告)号：WO2010085081A3
公开(公告)日：2010-07-29
申请号：PCT/KR2010/000360
申请日：2010-01-20
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang In
发明人： LEE, Sang In
IPC分类号： H01L31/042
摘要： An electrode structure comprises a semiconductor junction comprising an n-type semiconductor layer and a p-type semiconductor layer; a hole exnihilation layer on the p-type semiconductor layer; and a transparent electrode layer on the hole exnihilation layer. The electrode structure further comprises a conductive layer between the hole exnihilation layer and the transparent electrode layer. In the electrode structure, one or more of the hole exnihilation layer, the conductive layer and the transparent electrode layer may be formed by an atomic layer deposition. In the electrode structure, a transparent electrode formed of a degenerated n-type oxide semiconductor does not come in direct contact with a p-type semiconductor, and thus, annihilation or recombination of holes generated in the p-type semiconductor cam be reduced, which increases the carrier generation efficiency. Further, the electric conductivity of the transparent electrode is increased by the conductive layer, which improves electrical characteristics of a device.

6. 发明申请

WO2010019007A3 VAPOR DEPOSITION REACTOR FOR FORMING THIN FILM 审中-公开
标题翻译：用于形成薄膜的蒸气沉积反应器
公开(公告)号：WO2010019007A3
公开(公告)日：2010-04-15
申请号：PCT/KR2009004528
申请日：2009-08-13
申请人： SYNOS TECHNOLOGY INC , LEE SANG IN
发明人： LEE SANG IN
IPC分类号： H01L21/205
CPC分类号： C23C16/45551 , C23C16/4412
摘要： A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.
摘要翻译：气相沉积反应器包括填充有第一材料的腔室和腔室中的至少一个反应模块。反应模块可以被配置成通过基底和反应模块之间的相对运动使基底通过反应模块。反应模块可以包括用于将第二材料注入到基底的注入单元。形成薄膜的方法包括将衬底放置在腔室中，在腔室中填充第一材料，相对于腔室中的反应模块移动衬底，以及在衬底通过反应模块时向衬底注入第二材料。

7. 发明申请

WO2005034196A3 ATOMIC LAYER DEPOSITION OF HAFNIUM-BASED HIGH-K DIELECTRIC 审中-公开
公开(公告)号：WO2005034196A3
公开(公告)日：2005-04-14
申请号：PCT/US2004/032351
申请日：2004-09-30
申请人： AVIZA TECHNOLOGY, INC. , LEE, Sang-In , OWYANG, Jon S. , SENZAKI, Yoshihide , HELMS, Aubrey L. , KAPKIN, Kerem
发明人： LEE, Sang-In , OWYANG, Jon S. , SENZAKI, Yoshihide , HELMS, Aubrey L. , KAPKIN, Kerem
IPC分类号： C30B25/00
摘要： A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.

8. 发明申请

WO2005034195A2 GROWTH OF HIGH-K DIELECTRICS BY ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：通过原子层沉积生长高K电介质
公开(公告)号：WO2005034195A2
公开(公告)日：2005-04-14
申请号：PCT/US2004/032263
申请日：2004-09-30
申请人： AVIZA TECHNOLOGY, INC. , SENZAKI, Yoshihide , LEE, Sang-In , AL-LAMI, Sattar
发明人： SENZAKI, Yoshihide , LEE, Sang-In , AL-LAMI, Sattar
IPC分类号： H01L
CPC分类号： C23C16/45527 , C23C16/403 , C23C16/405 , C23C16/45529 , C23C16/45531 , H01L21/02178 , H01L21/02181 , H01L21/0228 , H01L21/02337 , H01L21/3141 , H01L21/3162 , H01L21/31645
摘要： In general, the present invention provides a method of depositing high -k dielectric films or layers, such as but not limited to high-k gate dielectric films. In one embodiment, atomic layer deposition (ALD) cycles are carried out where ozone is selectively conveyed to a chamber in separate cycles to form a metal oxide layer on the surface of a substrate where the metal oxide layer has an interfacial oxide layer of minimal thickness.
摘要翻译：通常，本发明提供了沉积高k电介质膜或层的方法，例如但不限于高k栅介质膜。在一个实施方案中，进行原子层沉积（ALD）循环，其中臭氧被选择性地以单独的循环传送到室，以在衬底的表面上形成金属氧化物层，其中金属氧化物层具有最小厚度的界面氧化物层。

9. 发明申请

WO2004017378A3 ATOMIC LAYER DEPOSITION OF HIGH K METAL SILICATES 审中-公开
标题翻译：高K金属硅酸盐的原子层沉积
公开(公告)号：WO2004017378A3
公开(公告)日：2004-05-06
申请号：PCT/US0325739
申请日：2003-08-18
申请人： AVIZA TECH INC , INTEGRATED PROCESS SYSTEMS LTD , LEE SANG-IN , SENZAKI YOSHIHIDE , LEE SANG-KYOO
发明人： LEE SANG-IN , SENZAKI YOSHIHIDE , LEE SANG-KYOO
IPC分类号： H01L21/312 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/20 , H01L21/314 , H01L21/316 , H01L21/31 , H01L21/469
CPC分类号： H01L21/3141 , C23C16/401 , C23C16/45531 , H01L21/31612 , H01L21/31645
摘要： The present invention relates to the atomic layer deposition ("ALD") of high k dielectric layers of metal silicates, including hafnium silicate. More particularly, the present invention relates to the ALD formation of metal silicates using metal organic precursors, silicon organic precursors and ozone. Preferably, the metal organic precursor is a metal alkyl amide and the silicon organic precursor is a silicon alkyl amide.
摘要翻译：本发明涉及金属硅酸盐（包括硅酸铪）的高k介电层的原子层沉积（“ALD”）。更具体地说，本发明涉及使用金属有机前体，硅有机前体和臭氧进行金属硅酸盐的ALD形成。优选地，金属有机前体是金属烷基酰胺并且硅有机前体是硅烷基酰胺。

10. 发明申请

WO2004017383A2 LOW TERMPERATURE DEPOSITION OF SILICON OXIDES AND OXYNITRIDES 审中-公开
标题翻译：氧化硅和氧化亚铁的低温沉积
公开(公告)号：WO2004017383A2
公开(公告)日：2004-02-26
申请号：PCT/US0326083
申请日：2003-08-18
申请人： ASML US INC , INTEGRATED PROCESS SYSTEMS LTD , SENZAKI YOSHIHIDE , LEE SANG-IN , LEE SANG-KYOO
发明人： SENZAKI YOSHIHIDE , LEE SANG-IN , LEE SANG-KYOO
IPC分类号： H01L21/205 , C23C16/30 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/316 , H01L21/318 , H01L
CPC分类号： C23C16/45525 , C23C16/308 , C23C16/401 , C23C16/45531 , C23C16/45553 , H01L21/0214 , H01L21/02164 , H01L21/02219 , H01L21/02271 , H01L21/0228 , H01L21/3141 , H01L21/3145 , H01L21/31612
摘要： The present invention relates to low temperature (i.e., less than about 450 DEG C) chemical vapor deposition (CVD) and low temperature atomic layer deposition (ALD) processes for forming silicon oxide and/or silicon oxynitride derived from silicon organic precursors and ozone. The processes of the invention provide good step coverage. The invention can be utilized to deposit both high-k and low-k dielectrics.
摘要翻译：本发明涉及用于形成由硅有机前体和臭氧衍生的氧化硅和/或氮氧化硅的低温（即低于约450℃）化学气相沉积（CVD）和低温原子层沉积（ALD）工艺。本发明的方法提供了良好的阶梯覆盖。本发明可以用来沉积高k和低k电介质。

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