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1. 发明申请

WO2012112584A3 ATOMIC LAYER DEPOSITION USING RADICALS OF GAS MIXTURE 审中-公开
公开(公告)号：WO2012112584A3
公开(公告)日：2012-08-23
申请号：PCT/US2012/025095
申请日：2012-02-14
申请人： SYNOS TECHNOLOGY, INC , LEE, Sang In
发明人： LEE, Sang In
IPC分类号： B32B15/04 , C23C16/00 , C23C16/48
摘要： Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.

2. 发明申请

WO2012112584A2 ATOMIC LAYER DEPOSITION USING RADICALS OF GAS MIXTURE 审中-公开
标题翻译：用气体混合物自由基沉积原子层沉积
公开(公告)号：WO2012112584A2
公开(公告)日：2012-08-23
申请号：PCT/US2012025095
申请日：2012-02-14
申请人： SYNOS TECHNOLOGY INC , LEE SANG IN
发明人： LEE SANG IN
IPC分类号： C23C16/455 , C23C16/50
CPC分类号： C23C16/513 , C23C16/308 , C23C16/403 , C23C16/405 , C23C16/45542 , C23C16/45551
摘要： Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.
摘要翻译：使用氮化合物混合物的自由基进行原子层沉积（ALD）以增加沉积在衬底上的层的沉积速率。氮化合物气体的混合物被注入自由基反应器。化合物气体的等离子体是通过在自由基反应器中的两个电极之间施加电压而产生的，以产生氮化合物气体的自由基。自由基被注入到先前注入源前体的衬底表面上。自由基起到反应物前体的作用并在基底上沉积一层材料。

3. 发明申请

WO2012071195A1 EXTENDED REACTOR ASSEMBLY WITH MULTIPLE SECTIONS FOR PERFORMING ATOMIC LAYER DEPOSITION ON LARGE SUBSTRATE 审中-公开
标题翻译：扩展的反应堆组件，用于在大型基板上执行原子层沉积的多个部分
公开(公告)号：WO2012071195A1
公开(公告)日：2012-05-31
申请号：PCT/US2011/060474
申请日：2011-11-11
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/00
CPC分类号： C23C16/45551 , C23C16/45536 , H01J37/32376 , H01J37/32449 , H01J37/32568 , H01J37/32752 , H01J37/32807
摘要： An elongated reactor assembly in a deposition device for performing atomic layer deposition (ALD) on a large substrate. The elongated reactor assembly includes one or more injectors and/or radical reactors. Each injector or radical reactor injects a gas or radicals onto the substrate as the substrate passes the injector or radical reactor as part of the ALD process. Each injector or radical reactor includes a plurality of sections where at least two sections have different cross sectional configurations. By providing different sections in the injector or radical reactor, the injector or radical reactor may inject the gas or the radicals more uniformly over the substrate. Each injector or radical reactor may include more than one outlet for discharging excess gas or radicals outside the deposition device.
摘要翻译：在用于在大衬底上进行原子层沉积（ALD）的沉积装置中的细长反应器组件。细长的反应器组件包括一个或多个注射器和/或自由基反应器。当基片作为ALD过程的一部分通过注射器或自由基反应器时，每个注射器或自由基反应器将气体或基团注入到基底上。每个喷射器或自由基反应器包括多个部分，其中至少两个部分具有不同的横截面构造。通过在注射器或自由基反应器中提供不同的部分，注射器或自由基反应器可以将气体或自由基更均匀地注入基底上。每个注射器或自由基反应器可以包括用于排出沉积装置外部的多余气体或自由基的多于一个的出口。

4. 发明申请

WO2012012381A1 TREATING SURFACE OF SUBSTRATE USING INERT GAS PLASMA IN ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：使用原子等离子体在原子层沉积中处理基板的表面
公开(公告)号：WO2012012381A1
公开(公告)日：2012-01-26
申请号：PCT/US2011/044470
申请日：2011-07-19
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： H01L21/00
CPC分类号： C23C16/45534 , C23C16/45551 , H01J37/32357 , H01J37/3244 , H01J37/32752 , H01J37/32779 , H01J2237/332
摘要： Depositing one or more layers of material on a substrate using atomic layer deposition (ALD) followed by surface treating the substrate with radicals of inert gas before subjecting the substrate to further deposition of layers. The radicals of the inert gas appear to change the surface state of the deposited layer to a state more amenable to absorb subsequent source precursor molecules. The radicals of the inert gas disconnect bonding of molecules on the surface of the substrate, and render the molecules on the surface to have dangling bonds. The dangling bonds facilitate absorption of subsequently injected source precursor molecules into the surface. Exposure to the radicals of the inert gas thereby increases the deposition rate and improves the properties of the deposited layer.
摘要翻译：使用原子层沉积（ALD）在衬底上沉积一层或多层材料，然后在使衬底进一步沉积层之前用惰性气体的自由基进行表面处理。惰性气体的自由基似乎将沉积层的表面状态改变为更适于吸收后续的源前体分子的状态。惰性气体的自由基分离在基底表面上的分子结合，并使表面上的分子具有悬挂键。悬挂键有助于随后将注入的源前体分子吸收到表面中。暴露于惰性气体的自由基因而增加了沉积速率并改善了沉积层的性能。

5. 发明申请

WO2010085081A2 ELECTRODE STRUCTURE, DEVICE COMPRISING THE SAME AND METHOD FOR FORMING ELECTRODE STRUCTURE 审中-公开
标题翻译：电极结构，包含该结构的器件和形成电极结构的方法
公开(公告)号：WO2010085081A2
公开(公告)日：2010-07-29
申请号：PCT/KR2010000360
申请日：2010-01-20
申请人： SYNOS TECHNOLOGY INC , LEE SANG IN
发明人： LEE SANG IN
IPC分类号： H01L31/042
CPC分类号： H01L21/02554 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/075 , H01L31/078 , H01L31/1884 , Y02E10/50
摘要： An electrode structure comprises a semiconductor junction comprising an n-type semiconductor layer and a p-type semiconductor layer; a hole exnihilation layer on the p-type semiconductor layer; and a transparent electrode layer on the hole exnihilation layer. The electrode structure further comprises a conductive layer between the hole exnihilation layer and the transparent electrode layer. In the electrode structure, one or more of the hole exnihilation layer, the conductive layer and the transparent electrode layer may be formed by an atomic layer deposition. In the electrode structure, a transparent electrode formed of a degenerated n-type oxide semiconductor does not come in direct contact with a p-type semiconductor, and thus, annihilation or recombination of holes generated in the p-type semiconductor cam be reduced, which increases the carrier generation efficiency. Further, the electric conductivity of the transparent electrode is increased by the conductive layer, which improves electrical characteristics of a device.
摘要翻译：一种电极结构，包括：半导体结，包括n型半导体层和p型半导体层; 在p型半导体层上的空穴溢出层; 以及在孔ex层上的透明电极层。该电极结构进一步包括位于孔外绝缘层和透明电极层之间的导电层。在电极结构中，空穴散发层，导电层和透明电极层中的一个或多个可以通过原子层沉积形成。在电极结构中，由退化的n型氧化物半导体形成的透明电极不会与p型半导体直接接触，并且因此可以减少在p型半导体凸轮中产生的空穴的湮灭或复合，提高载波生成效率。此外，透明电极的电导率通过导电层而增加，这提高了器件的电特性。

6. 发明申请

WO2013015943A1 TEXTILE INCLUDING FIBERS DEPOSITED WITH MATERIAL USING ATOMIC LAYER DEPOSITION FOR INCREASED RIGIDITY AND STRENGTH 审中-公开
标题翻译：纺织品包括用材料沉积的纤维，使用原子层沉积增加刚度和强度
公开(公告)号：WO2013015943A1
公开(公告)日：2013-01-31
申请号：PCT/US2012/044839
申请日：2012-06-29
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/00
CPC分类号： D06M11/77 , A01N59/16 , C23C16/045 , C23C16/45544 , C23C16/45555 , D06M11/45 , D06M11/83 , Y10T442/20 , Y10T442/2098 , Y10T442/2984 , A01N25/08 , A01N2300/00
摘要： Embodiments relate to depositing on one or more layers of materials on a fiber or fiber containing material using atomic layer deposition (ALD) to provide or enhance functionalities of the fibers or fiber containing material. Such functionalities include, for example, higher rigidity, higher strength, addition of resistance to bending, addition of resistance to impact or addition of resistance to tensile force of a fiber or fiber containing material. A layer of material is deposited coated on the fibers or the fiber containing material and then the surface of the material is oxidized, nitrified or carbonized to increase the volume of the material. By increasing the volume of the material, the material is subject to compressive stress. The compressive stress renders the fibers or the fiber containing material more rigid, stronger and more resistant against bending force, impact or tensile force.
摘要翻译：实施例涉及使用原子层沉积（ALD）在含纤维或含纤维材料的一层或多层材料上沉积以提供或增强纤维或含纤维材料的功能性。这样的功能包括例如较高的刚性，较高的强度，耐弯曲性，增加抗冲击性或增加抗纤维或含纤维材料的张力。将一层材料沉积在纤维或含纤维材料上，然后材料的表面被氧化，硝化或碳化以增加材料的体积。通过增加材料的体积，材料承受压应力。压缩应力使纤维或含纤维材料更加坚固，更坚固，更抗弯曲力，冲击力或拉力。

7. 发明申请

WO2011149690A1 PROTECTIVE STRUCTURE ENCLOSING DEVICE ON FLEXIBLE SUBSTRATE 审中-公开
标题翻译：保护结构在柔性基板上封装设备
公开(公告)号：WO2011149690A1
公开(公告)日：2011-12-01
申请号：PCT/US2011/036523
申请日：2011-05-13
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： H05B33/10 , H01J1/62
CPC分类号： H01L51/5253 , H01L51/0096 , H01L2251/5338 , H01L2251/5369 , Y02E10/549
摘要： A structure for protecting a device includes a first layer, one or more first microstructures on the first layer, and a second layer disposed on the first layer. The second layer is disposed on a surface of the first layer on which one or more microstructures are provided. The microstructure may have a hemispheric shape or other random shapes having a curved surface. Since the area of the interface surface between layers is increased due to the at least one microstructure, the stress per unit area of the interface surface is reduced. Further, the microstructure increases the length of the path that ambient species need to travel in order to reach a device or other active components, thereby reducing the amount of infiltrating ambient species.
摘要翻译：用于保护装置的结构包括第一层，第一层上的一个或多个第一微结构和设置在第一层上的第二层。第二层设置在其上设置有一个或多个微结构的第一层的表面上。微结构可以具有半球形状或具有弯曲表面的其它随机形状。由于至少一个微结构，由于层间界面的面积增加，因此界面表面的每单位面积的应力减小。此外，微结构增加环境物质需要行进的路径的长度以便到达装置或其它活性组分，从而减少渗透环境物质的量。

8. 发明申请

WO2010144377A1 VAPOR DEPOSITION REACTOR AND METHOD FOR FORMING THIN FILM 审中-公开
标题翻译：蒸气沉积反应器和形成薄膜的方法
公开(公告)号：WO2010144377A1
公开(公告)日：2010-12-16
申请号：PCT/US2010/037660
申请日：2010-06-07
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang, In
发明人： LEE, Sang, In
IPC分类号： C23C16/50
CPC分类号： C23C16/45551 , C01B21/076 , C23C16/32 , C23C16/34 , C23C16/40
摘要： A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.
摘要翻译：蒸镀反应器及薄膜形成方法。气相沉积反应器包括至少一个用于将反应材料注入到蒸镀反应器的第一部分中的凹部的第一注射部分。第二部分连接到第一空间并且具有连接到第一部分的凹部的凹部。第二部分的凹部被保持为具有低于第一空间中的压力的压力。第三部分连接到第二空间，并且排气部分连接到第三空间。

9. 发明申请

WO2010019008A2 VAPOR DEPOSITION REACTOR 审中-公开
标题翻译：蒸气沉积反应器
公开(公告)号：WO2010019008A2
公开(公告)日：2010-02-18
申请号：PCT/KR2009/004529
申请日：2009-08-13
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang In
发明人： LEE, Sang In
IPC分类号： H01L21/205
CPC分类号： C23C16/4412 , C23C16/45551 , C23C16/45563
摘要： A vapor deposition reactor includes a reaction module includes a first injection unit for injecting a first material onto a substrate. At least one second injection unit is placed within the first injection unit for injecting a second material onto the substrate. The substrate passes the reaction module through a relative motion between the substrate and the reaction module. The vapor deposition reactor advantageously injects a plurality of materials onto the substrate while the substrate passes the reaction module without exposing the substrate to the atmosphere in a chamber.
摘要翻译：气相沉积反应器包括反应模块，该反应模块包括用于将第一材料注入到基底上的第一注入单元。至少一个第二注射单元被放置在第一注射单元内用于将第二材料注射到基底上。基材通过基材和反应模块之间的相对运动而通过反应模块。当衬底通过反应模块时，气相沉积反应器有利地将多种材料注入到衬底上，而不将衬底暴露于室中的大气中。

10. 发明申请

WO2010019007A2 VAPOR DEPOSITION REACTOR FOR FORMING THIN FILM 审中-公开
标题翻译：用于形成薄膜的蒸气沉积反应器
公开(公告)号：WO2010019007A2
公开(公告)日：2010-02-18
申请号：PCT/KR2009/004528
申请日：2009-08-13
申请人： SYNOS TECHNOLOGY, INC. , LEE, Sang In
发明人： LEE, Sang In
IPC分类号： H01L21/205
CPC分类号： C23C16/45551 , C23C16/4412
摘要： A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.
摘要翻译：气相沉积反应器包括填充有第一材料的腔室和腔室中的至少一个反应模块。反应模块可以被配置为使得基板通过反应模块通过基板和反应模块之间的相对运动。反应模块可以包括用于将第二材料注入基底的注射单元。一种形成薄膜的方法包括将基板定位在室中，填充室中的第一材料，相对于室中的反应模块移动基板，以及在基板通过反应模块时将第二材料注入到基板。

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