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    • 21. 发明申请
    • COMMON DEPOSITION PLATFORM, PROCESSING STATION AND METHOD OF OPERATION THEREOF
    • 通用沉积平台,加工站及其操作方法
    • WO2014118062A1
    • 2014-08-07
    • PCT/EP2014/051259
    • 2014-01-22
    • APPLIED MATERIALS, INC.MORRISON, NeilDIEGUEZ-CAMPO, Jose ManuelLANDGRAF, HeikeSTOLLEY, TobiasHEIN, StefanRIES, FlorianBUSCHBECK, Wolfgang
    • MORRISON, NeilDIEGUEZ-CAMPO, Jose ManuelLANDGRAF, HeikeSTOLLEY, TobiasHEIN, StefanRIES, FlorianBUSCHBECK, Wolfgang
    • C23C16/455C23C16/54H01J37/32H05H1/24
    • C23C16/545C23C16/45517C23C16/45519C23C16/50H01J37/32449H01J37/32513H01J37/32568H01J37/32752H01J37/32761H01J37/3277
    • An apparatus for depositing a thin film on a substrate is described. The apparatus includes a substrate support having an outer surface for guiding the substrate along a surface of the substrate support through a first vacuum processing region and at least one second vacuum processing region, a first deposition sources corresponding to the first processing region and at least one second deposition source corresponding to the at least one second vacuum processing region, wherein at least the first deposition source includes: an electrode having a surface, wherein the surface of the electrode opposes the surface of the substrate support, a processing gas inlet and a processing gas outlet, wherein the processing gas inlet and the processing gas outlet are arranged at opposing sides of the surface of the electrode, and at least one separation gas inlet having one or more separation gas inlet openings, wherein the one or more separation gas inlet openings are at least provided at one of opposing sides of the surface of the electrode such that the processing gas inlet and/or the processing gas outlet are provided between the one or more separation gas inlet openings and the surface of the electrode. The apparatus further includes one or more vacuum flanges providing at least a further gas outlet between the first deposition source and the at least one second deposition source.
    • 描述了一种在衬底上沉积薄膜的装置。 该装置包括一个基板支架,该基板支撑件具有外表面,用于通过第一真空处理区域和至少一个第二真空处理区域沿基板支撑件的表面引导基板,对应于第一处理区域的第一沉积源和至少一个 第二沉积源对应于所述至少一个第二真空处理区域,其中至少所述第一沉积源包括:具有表面的电极,其中所述电极的表面与所述基板支撑件的表面相对,处理气体入口和处理 气体出口,其中处理气体入口和处理气体出口布置在电极表面的相对侧,以及至少一个具有一个或多个分离气体入口的分离气体入口,其中一个或多个分离气体入口 至少设置在电极的表面的相对侧中的一个处,使得处理 气体入口和/或处理气体出口设置在一个或多个分离气体入口与电极表面之间。 该装置还包括一个或多个真空凸缘,其在第一沉积源和至少一个第二沉积源之间提供至少另外的气体出口。