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21. 发明申请

WO2010120704A3 POWER SEMICONDUCTOR DEVICES, METHODS, AND STRUCTURES WITH EMBEDDED DIELECTRIC LAYERS CONTAINING PERMANENT CHARGES 审中-公开
标题翻译：具有包含永久电荷的嵌入式电介质层的功率半导体器件，方法和结构
公开(公告)号：WO2010120704A3
公开(公告)日：2011-03-31
申请号：PCT/US2010030790
申请日：2010-04-12
申请人： MAXPOWER SEMICONDUCTOR INC , DARWISH MOHAMED N , ZENG JUN , BLANCHARD RICHARD A
发明人： DARWISH MOHAMED N , ZENG JUN , BLANCHARD RICHARD A
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/408 , H01L21/26586 , H01L29/0634 , H01L29/0661 , H01L29/0873 , H01L29/0882 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/7802 , H01L29/7811 , H01L29/7813 , H01L29/8611
摘要： Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.
摘要翻译：使用重新焊接的沟槽的功率器件在其侧壁处或附近具有永久电荷。这些沟槽垂直延伸到漂移区域。

22. 发明申请

WO2011035331A2 DEVICES, STRUCTURES, AND METHODS USING SELF-ALIGNED RESISTIVE SOURCE EXTENSIONS 审中-公开
标题翻译：使用自对准电阻源扩展的器件，结构和方法
公开(公告)号：WO2011035331A2
公开(公告)日：2011-03-24
申请号：PCT/US2010/049716
申请日：2010-09-21
申请人： BLANCHARD, Richard, A. , DARWISH, Mohamed, N. , ZENG, Jun , MAXPOWER SEMICONDUCTOR INC.
发明人： BLANCHARD, Richard, A. , DARWISH, Mohamed, N. , ZENG, Jun
IPC分类号： H01L29/73 , H01L29/732 , H01L29/78
CPC分类号： H01L29/7802 , H01L21/2255 , H01L29/0839 , H01L29/086 , H01L29/408 , H01L29/66333 , H01L29/66348 , H01L29/66712 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7813
摘要： Devices, structures, and related methods for IGBTs and the like which include a self-aligned series resistance at the source-body junction to avoid latchup. The series resistance is achieved by using a charged dielectric, and/or by using a dielectric which provides a source of dopant atoms of the same conductivity type as the source region, at a sidewall adjacent to the source region.
摘要翻译： IGBT等的器件，结构和相关方法，其包括在源体结处的自对准串联电阻以避免闭锁。通过使用带电电介质和/或通过使用在与源极区相邻的侧壁处使用提供与源极区相同的导电类型的掺杂剂原子的源的电介质来实现串联电阻。

23. 发明申请

WO2011034908A1 LIGHT EMITTING, PHOTOVOLTAIC OR OTHER ELECTRONIC APPARATUS AND SYSTEM AND METHOD OF MAKING SAME 审中-公开
标题翻译：发光，光伏或其他电子设备及其制造方法
公开(公告)号：WO2011034908A1
公开(公告)日：2011-03-24
申请号：PCT/US2010/048918
申请日：2010-09-15
申请人： NTHDEGREE TECHNOLOGIES WORLDWIDE INC. , UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION , RAY, William, Johnstone , SHOTTON, Neil, O. , BLANCHARD, Richard, A. , LEWANDOWSKI, Mark, Allen , FULLER, Kirk, A. , FRAZIER, Donald, Odell , LOWENTHAL, Mark D.
发明人： RAY, William, Johnstone , SHOTTON, Neil, O. , BLANCHARD, Richard, A. , LEWANDOWSKI, Mark, Allen , FULLER, Kirk, A. , FRAZIER, Donald, Odell , LOWENTHAL, Mark D.
IPC分类号： F21V5/04
CPC分类号： H01L51/52 , H01L25/0753 , H01L27/3237 , H01L31/035281 , H01L31/0475 , H01L31/0508 , H01L31/0512 , H01L31/068 , H01L33/20 , H01L33/58 , H01L33/62 , H01L51/5203 , H01L51/5275 , H01L2251/5361 , H01L2924/0002 , Y02E10/547 , H01L2924/00
摘要： The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10: 1 and 2: 1. The diodes may be LEDs or photovoltaic diodes.
摘要翻译：本发明提供一种电子装置，例如由发光二极管（LED）组成的照明装置或包括可通过印刷工艺产生的光伏二极管的发电装置，使用半导体或其它基板颗粒墨水或悬浮液，使用透镜颗粒墨水或悬浮液。示例性装置包括基座; 至少一个第一导体; 耦合到所述至少一个第一导体的多个二极管; 耦合到所述多个二极管的至少一个第二导体; 以及悬浮在沉积或附着在二极管上的聚合物中的多个透镜。透镜和悬浮聚合物具有不同的折射率。在一些实施例中，透镜和二极管基本上是球形的，并且具有约10:1至2:1之间的平均直径或长度的比率。二极管可以是LED或光伏二极管。

24. 发明申请

WO2010127370A2 SERIES CURRENT LIMITING DEVICE 审中-公开
标题翻译：系列电流限制器件
公开(公告)号：WO2010127370A2
公开(公告)日：2010-11-04
申请号：PCT/US2010/033451
申请日：2010-05-03
申请人： ANKOUDINOV, Alexei , RODOV, Vladimir , BLANCHARD, Richard, A. , LAKOTA TECHNOLOGIES, INC.
发明人： ANKOUDINOV, Alexei , RODOV, Vladimir , BLANCHARD, Richard, A.
IPC分类号： H01L29/861 , H01L21/82 , H01L23/62
CPC分类号： H01L29/7815 , H01L27/088 , H01L29/423 , H01L29/7803 , H01L29/7813 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor protection devices, and related methods and systems, especially devices for providing series current limiting. The device typically comprises two regenerative building blocks and/or MOSFETs connected back-to-back in series, where one of the MOSFETs/Regenerative Building Blocks has an extra voltage probe electrode that provides a regenerative signal with self-limited voltage to the other via coupling to its gate electrode.
摘要翻译：半导体保护装置及相关方法和系统，尤其是用于提供串联电流限制的装置。器件通常包括串联背对背连接的两个再生建筑模块和/或MOSFET，其中一个MOSFET /再生构件模块具有一个额外的电压探针电极，其向另一个通孔提供具有自限制电压的再生信号耦合到其栅电极。

25. 发明申请

WO2007038365A3 FIELD-EFFECT SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE REGIONS 审中-公开
标题翻译：包括超级区域的场效应半导体器件
公开(公告)号：WO2007038365A3
公开(公告)日：2007-07-12
申请号：PCT/US2006037140
申请日：2006-09-22
申请人： RJ MEARS LLC , BLANCHARD RICHARD A
发明人： BLANCHARD RICHARD A
IPC分类号： H01L29/78 , H01L21/336 , H01L29/08 , H01L29/10 , H01L29/15
CPC分类号： H01L29/7816 , B82Y10/00 , H01L29/0882 , H01L29/1054 , H01L29/152 , H01L29/158 , H01L29/66568 , H01L29/66681 , H01L29/66712 , H01L29/66734 , H01L29/7802 , H01L29/7813
摘要： A semiconductor device (20) may include a substrate (21) and spaced apart source (13) and drain (27) regions defining a channel region (24) therebetween in the substrate. The substrate may have a plurality of spaced apart superlattices (25) in the channel and/or drain regions. Each superlattice may include a plurality of stacked groups of layers, with each group including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon. The at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may be a DMOS device.
摘要翻译：半导体器件（20）可以包括衬底（21）和间隔开的源极（13）和漏极（27）区域，其在衬底中在其间限定沟道区域（24）。衬底可以在沟道和/或漏极区域中具有多个间隔开的超晶格（25）。每个超晶格可以包括多个堆叠的层组，每个组包括限定基极半导体部分和其上的至少一个非半导体单层的多个堆叠的基底半导体单层。至少一个非半导体单层可以被约束在相邻的基底半导体部分的晶格内。半导体器件可以是DMOS器件。

26. 发明申请

WO2007022136A3 IMPROVED TRANSIENT BLOCKING UNIT 审中-公开
标题翻译：改进的瞬态阻塞单元
公开(公告)号：WO2007022136A3
公开(公告)日：2007-07-12
申请号：PCT/US2006031742
申请日：2006-08-11
申请人： FULTEC SEMICONDUCTOR INC , HARRIS RICHARD A , BLANCHARD RICHARD A , HEBERT FRANCOIS
发明人： HARRIS RICHARD A , BLANCHARD RICHARD A , HEBERT FRANCOIS
IPC分类号： H02H5/04
CPC分类号： H02H9/025
摘要： Improved electrical transient blocking is provided with a transient blocking unit (TBU) having a partial disconnect capability. A TBU is an arrangement of voltage controlled switches that normally conducts, but switches to a disconnected state in response to an above-threshold input transient. Partial disconnection improves the power handling capability of a TBU by preventing thermal damage to the TBU. Partial TBU disconnection can be implemented to keep power dissipation in the TBU below a predetermined level P max , thereby avoiding thermal damage to the TBU by keeping the TBU temperature below a temperature limit T max . Alternatively, partial TBU disconnection can be implemented to keep TBU temperature below T max using direct temperature sensing and feedback.
摘要翻译：提供具有部分断开能力的瞬态阻塞单元（TBU）的改进的电气瞬态阻塞。 TBU是通常导通的电压控制开关的布局，但是响应于高于阈值的输入瞬态切换到断开状态。部分断开通过防止对TBU的热损坏来提高TBU的功率处理能力。部分TBU断开可以实现以将TBU中的功率消耗保持在预定水平P _{max 以下，由此通过保持TBU温度低于温度限制T _{max 来避免TBU的热损伤。 SUB>。或者，可以使用直接温度感测和反馈来实现部分TBU断开，以将TBU温度保持在T MAX以下。}}

27. 发明申请

WO2007038365A2 SEMICONDUCTOR DEVICE INCLUDING REGIONS OF BAND-ENGINEERED SEMICONDUCTOR SUPERLATTICE TO REDUCE DEVICE-ON RESISTANCE AND ASSOCIATED METHODS 审中-公开
标题翻译：包含工程化半导体超导区域的半导体器件降低器件电阻和相关方法
公开(公告)号：WO2007038365A2
公开(公告)日：2007-04-05
申请号：PCT/US2006/037140
申请日：2006-09-22
申请人： RJ MEARS, LLC , BLANCHARD, Richard A.
发明人： BLANCHARD, Richard A.
IPC分类号： H01L29/78 , H01L29/15 , H01L29/10 , H01L29/08
CPC分类号： H01L29/7802 , B82Y10/00 , H01L29/0882 , H01L29/1054 , H01L29/152 , H01L29/158 , H01L29/66568 , H01L29/66681 , H01L29/66712 , H01L29/66734 , H01L29/7813 , H01L29/7816
摘要： A semiconductor device may include a substrate and spaced apart source and drain regions defining a channel region therebetween in the substrate. The substrate may have a plurality of spaced apart superlattices in the channel and/or drain regions. Each superlattice may include a plurality of stacked groups of layers, with each group including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon. The at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent base semiconductor portions.
摘要翻译：半导体器件可以包括衬底和在衬底中限定其间的沟道区的间隔开的源极和漏极区域。衬底可以在沟道和/或漏极区域中具有多个间隔开的超晶格。每个超晶格可以包括多个堆叠的层组，每个组包括限定基极半导体部分和其上的至少一个非半导体单层的多个堆叠的基底半导体单层。至少一个非半导体单层可以被约束在相邻的基底半导体部分的晶格内。

28. 发明申请

WO2012031178A2 A LIGHT EMITTING APPARATUS 审中-公开
标题翻译：发光装置
公开(公告)号：WO2012031178A2
公开(公告)日：2012-03-08
申请号：PCT/US2011/050292
申请日：2011-09-02
申请人： THE PROCTER & GAMBLE COMPANY , RAY, William, Johnstone , LOWENTHAL, Mark, D. , SHOTTON, Neil, O. , BLANCHARD, Richard, A. , LEWANDOWSKI, Mark, Allan , ORAW, Brad , STEINHARDT, Mark, John , BISCHOFF, Corey, Michael , SAWICKI, Edward, Mack , MCGUIRE, Kenneth, Stephen , HASENOEHRL, Erik, John
发明人： RAY, William, Johnstone , LOWENTHAL, Mark, D. , SHOTTON, Neil, O. , BLANCHARD, Richard, A. , LEWANDOWSKI, Mark, Allan , ORAW, Brad , STEINHARDT, Mark, John , BISCHOFF, Corey, Michael , SAWICKI, Edward, Mack , MCGUIRE, Kenneth, Stephen , HASENOEHRL, Erik, John
IPC分类号： H01L23/00 , H01L21/98
CPC分类号： H01L25/0753 , F21K9/232 , F21W2121/00 , F21Y2115/10 , H01L24/95 , H01L33/20 , H01L33/38 , H01L33/44 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/1301 , H01L2924/13033 , H01L2924/13034 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A lighting apparatus comprising a plurality of diodes and an electrical interface configured to receive an electrical signal and transmit the electrical signal to the plurality of diodes is provided.
摘要翻译：提供了一种照明装置，其包括多个二极管和被配置为接收电信号并将该电信号传输到多个二极管的电接口。

29. 发明申请

WO2012031092A2 DIODES, PRINTABLE COMPOSITIONS OF A LIQUID OR GEL SUSPENSION OF DIODES OR OTHER TWO-TERMINAL INTEGRATED CIRCUITS, AND METHODS OF MAKING SAME 审中-公开
标题翻译：二极管，二极管或其他二端集成电路的液体或凝胶悬浮液的可印刷组合物及其制备方法
公开(公告)号：WO2012031092A2
公开(公告)日：2012-03-08
申请号：PCT/US2011050168
申请日：2011-09-01
申请人： NTHDEGREE TECH WORLDWIDE INC , LOWENTHAL MARK D , RAY WILLIAM JOHNSTONE , SHOTTON NEIL O , BLANCHARD RICHARD A , ORAW BRAD , LEWANDOWSKI MARK ALLAN , BALDRIDGE JEFFREY , PEROZZIELLO ERIC ANTHONY
发明人： LOWENTHAL MARK D , RAY WILLIAM JOHNSTONE , SHOTTON NEIL O , BLANCHARD RICHARD A , ORAW BRAD , LEWANDOWSKI MARK ALLAN , BALDRIDGE JEFFREY , PEROZZIELLO ERIC ANTHONY
IPC分类号： H01L51/54
CPC分类号： H01L25/0753 , C09D11/52 , H01L24/05 , H01L25/50 , H01L33/20 , H01L33/38 , H01L2224/05556 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/13033 , H01L2924/13034 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/00
摘要： An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. In other exemplary embodiments a second solvent is also included, and the composition has a viscosity substantially between about 1,000 cps and about 25,000 cps at about 25° C. In an exemplary embodiment, a composition comprises: a plurality of diodes or other two-terminal integrated circuits; one or more solvents comprising about 15% to 99.9% of any of N-propanol, isopropanol, dipropylene glycol, diethylene glycol, propylene glycol, l-methoxy-2-propanol, N-octanol, ethanol, tetrahydrofurfuryl alcohol, cyclohexanol, and mixtures thereof; a viscosity modifier comprising about 0.10% to 2.5% methoxy propyl methylcellulose resin or hydroxy propyl methylcellulose resin or mixtures thereof; and about 0.01% to 2.5% of a plurality of substantially optically transparent and chemically inert particles having a range of sizes between about 10 to about 30 microns.
摘要翻译：二极管的液体或凝胶悬浮液的示例性可印刷组合物包含多个二极管，第一溶剂和/或粘度调节剂。在其他示例性实施方式中，还包括第二溶剂，并且该组合物在约25℃下的粘度基本上在约1,000cps和约25,000cps之间。在示例性实施方式中，组合物包含：多个二极管或其他双端集成电路; 一种或多种包含约15％至99.9％的任何N-丙醇，异丙醇，二丙二醇，二甘醇，丙二醇，1-甲氧基-2-丙醇，N-辛醇，乙醇，四氢糠醇，环己醇和其混合物的溶剂物; 包含约0.10％至2.5％甲氧基丙基甲基纤维素树脂或羟丙基甲基纤维素树脂或其混合物的粘度调节剂; 以及具有约10至约30微米的尺寸范围的多个基本光学透明和化学惰性颗粒的约0.01％至2.5％。

30. 发明申请

WO2008066999A3 DEVICES, METHODS, AND SYSTEMS WITH MOS-GATED TRENCH-TO-TRENCH LATERAL CURRENT FLOW 审中-公开
标题翻译：装置，方法和具有MOS栅极到栅极横向电流的系统
公开(公告)号：WO2008066999A3
公开(公告)日：2008-09-12
申请号：PCT/US2007078075
申请日：2007-09-10
申请人： BLANCHARD RICHARD A
发明人： BLANCHARD RICHARD A
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/7825 , H01L29/0696 , H01L29/41766 , H01L29/66704 , H01L29/66787
摘要： A DMOS transistor is fabricated with its source/body/deep body regions formed on the walls of a first set of trenches, and its drain regions formed on the walls of a different set of trenches. A gate region that is formed in a yet another set of trenches can be biased to allow carriers to flow from the source to the drain. Lateral current low from source/body regions on trench walls increases the active channel perimeter to a value well above the amount that would be present if the device was fabricated on just the surface of the wafer. Masking is avoided while open trenches are present. A transistor with a very low ort-resistance per unit area is obtained.
摘要翻译： DMOS晶体管的制作是在第一组沟槽的壁上形成其源/本体/深体区域，并将其漏极区域形成在不同组的沟槽的壁上。形成在又一组沟槽中的栅极区域可以被偏置以允许载流子从源极流到漏极。在沟槽壁上源/体区低的横向电流将活性沟道周长增加到远高于如果器件仅在晶片表面上制造时将出现的量的值。在开放的战壕存在时，避免掩蔽。获得每单位面积具有非常低的ort电阻的晶体管。

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