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1. 发明授权

US06270617B1 RF plasma reactor with hybrid conductor and multi-radius dome ceiling 失效
标题翻译：射频等离子体反应器与混合导体和多半圆顶天花板
公开(公告)号：US06270617B1
公开(公告)日：2001-08-07
申请号：US08778051
申请日：1997-01-02
申请人： Gerald Yin , Diana Xiabing Ma , Peter Loewenhardt , Philip Salzman , Allen Zhao , Hiroji Hanawa
发明人： Gerald Yin , Diana Xiabing Ma , Peter Loewenhardt , Philip Salzman , Allen Zhao , Hiroji Hanawa
IPC分类号： H05H100
CPC分类号： H01J37/321
摘要： An RF plasma reactor for processing a semiconductor wafer in a reactor chamber with a multi-radius dome-shaped ceiling and a gas inlet for supplying a process gas into the chamber includes an overhead RF signal applicator near the ceiling for applying an RF signal into the chamber through the ceiling to maintain a plasma of the process gas in the chamber, the plasma having a radial ion density distribution near the plane of the pedestal which is center-high for a greater height of the ceiling above the pedestal and is center-low for a lesser height, the height of the ceiling being intermediate the greater and lesser heights such that the radial ion density distribution is neither center-high nor center-low. In another aspect of the invention, the RF signal applicator has an annular distribution characterized by an effective mean radius, the plasma having a radial ion density distribution with respect to an axis of symmetry of the ceiling which is center-high for a lesser mean radius of the signal applicator and center-low for a greater mean radius of the signal applicator, the mean radius of the signal applicator being intermediate the greater and lesser mean radii such that the radial ion density distribution is neither center-high nor center-low.
摘要翻译：用于在具有多半圆顶形天花板的反应室中处理半导体晶片的RF等离子体反应器和用于将工艺气体供应到室中的气体入口包括在天花板附近的顶置RF信号施加器，用于将RF信号施加到通过天花板保持腔室中的处理气体的等离子体，等离子体在基座的平面附近具有径向离子密度分布，该基座的平面是中心高的，用于在基座上方的天花板的更高的高度，并且是中心的对于较小的高度，天花板的高度在较大和较小的高度之间，使得径向离子密度分布既不是中心高也不是中心低。在本发明的另一方面，RF信号施加器具有由有效平均半径表征的环形分布，等离子体相对于天花板的对称轴线具有径向离子密度分布，其对于较小的平均半径为中心高并且信号施加器的平均半径更大，信号施加器的平均半径在较大和较小的平均半径之间，使得径向离子密度分布既不是中心高也不是中心低。

2. 发明授权

US06475335B1 RF plasma reactor with hybrid conductor and multi-radius dome ceiling 失效
标题翻译：射频等离子体反应器与混合导体和多半圆顶天花板
公开(公告)号：US06475335B1
公开(公告)日：2002-11-05
申请号：US09658572
申请日：2000-09-08
申请人： Gerald Yin , Diana Xiabing Ma , Peter Loewenhardt , Philip Salzman , Allen Zhao , Hiroji Hanawa
发明人： Gerald Yin , Diana Xiabing Ma , Peter Loewenhardt , Philip Salzman , Allen Zhao , Hiroji Hanawa
IPC分类号： H05H100
CPC分类号： H01J37/321
摘要： An RF plasma reactor for processing a semiconductor wafer in a reactor chamber with a multi-radius dome-shaped ceiling and a gas inlet for supplying a process gas into the chamber includes an overhead RF signal applicator near the ceiling for applying an RF signal into the chamber through the ceiling to maintain a plasma of the process gas in the chamber, the plasma having a radial ion density distribution near the plane of the pedestal which is center-high for a greater height of the ceiling above the pedestal and is center-low for a lesser height, the height of the ceiling being intermediate the greater and lesser heights such that the radial ion density distribution is neither center-high nor center-low. In another aspect of the invention, the RF signal applicator has an annular distribution characterized by an effective mean radius, the plasma having a radial ion density distribution with respect to an axis of symmetry of the ceiling which is center-high for a lesser mean radius of the signal applicator and center-low for a greater mean radius of the signal applicator, the mean radius of the signal applicator being intermediate the greater and lesser mean radii such that the radial ion density distribution is neither center-high nor center-low.
摘要翻译：用于在具有多半圆顶形天花板的反应室中处理半导体晶片的RF等离子体反应器和用于将工艺气体供应到室中的气体入口包括在天花板附近的顶置RF信号施加器，用于将RF信号施加到通过天花板保持腔室中的处理气体的等离子体，等离子体在基座的平面附近具有径向离子密度分布，该基座的平面是中心高的，用于在基座上方的天花板的更高的高度，并且是中心的对于较小的高度，天花板的高度在较大和较小的高度之间，使得径向离子密度分布既不是中心高也不是中心低。在本发明的另一方面，RF信号施加器具有由有效平均半径表征的环形分布，等离子体相对于天花板的对称轴线具有径向离子密度分布，其对于较小的平均半径为中心高并且信号施加器的平均半径更大，信号施加器的平均半径在较大和较小的平均半径之间，使得径向离子密度分布既不是中心高也不是中心低。

3. 发明授权

US5753044A RF plasma reactor with hybrid conductor and multi-radius dome ceiling 失效
标题翻译：射频等离子体反应器与混合导体和多半圆顶天花板
公开(公告)号：US5753044A
公开(公告)日：1998-05-19
申请号：US389889
申请日：1995-02-15
申请人： Hiroji Hanawa , Gerald Zheyao Yin , Diana X. Ma , Phil M. Salzman , Peter Loewenhardt , Allen Zhao
发明人： Hiroji Hanawa , Gerald Zheyao Yin , Diana X. Ma , Phil M. Salzman , Peter Loewenhardt , Allen Zhao
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321
摘要： An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall and a ceiling, a wafer pedestal for supporting the wafer in the chamber, an RF power source, apparatus for introducing a processing gas into the reactor chamber, and a coil inductor adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section facing a portion of the side wall and including a bottom winding and a top winding, the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling.
摘要翻译：用于处理半导体晶片的感应耦合RF等离子体反应器包括具有侧壁和天花板的反应室，用于将晶片支撑在室中的晶片基座，RF电源，将处理气体引入反应室的装置，以及与所述反应室相邻的线圈电感器，所述线圈电感器连接到所述RF电源，所述线圈电感器包括（a）面向所述侧壁的一部分并包括底部绕组和顶部绕组的侧面部分，所述顶部绕组的高度对应于至少大约到顶部的顶部高度，以及（b）从侧部的顶部绕组径向向内延伸的顶部部分，以便至少覆盖天花板的大部分。

4. 发明授权

US5817534A RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers 失效
标题翻译： RF等离子体反应器，其具有用于在半导体晶片的处理期间进行清洁的清洁电极
公开(公告)号：US5817534A
公开(公告)日：1998-10-06
申请号：US567376
申请日：1995-12-04
申请人： Yan Ye , Hiroji Hanawa , Diana Xiaobing Ma , Gerald Zheyao Yin , Peter Loewenhardt , Donald Olgado , James Papanu , Steven S.Y. Mak
发明人： Yan Ye , Hiroji Hanawa , Diana Xiaobing Ma , Gerald Zheyao Yin , Peter Loewenhardt , Donald Olgado , James Papanu , Steven S.Y. Mak
IPC分类号： H05H1/46 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/304 , H01L21/3065 , H05H1/00
CPC分类号： H01L21/67028 , H01J37/32862 , Y10S438/905
摘要： The invention is carried out in a plasma reactor for processing a semiconductor wafer, the plasma reactor having a chamber for containing a processing gas and having a conductor connected to an RF power source for coupling RF power into the reactor chamber to generate from the processing gas a plasma inside the chamber, the chamber containing at least one surface exposed toward the plasma and susceptible to contamination by particles produced during processing of the wafer, the invention being carried out by promoting, during processing of the wafer, bombarding of particles from the plasma onto the one surface to remove therefrom contaminants deposited during processing of the wafer. Such promoting of bombarding is carried out by providing an RF power supply and coupling, during processing of the wafer, RF power from the supply to the one surface. The coupling may be performed by a capacitive cleaning electrode adjacent the one surface, the capacitive cleaning electrode connected to the RF power supply. The capacitive cleaning electrode preferably is disposed on a side of the one surface opposite the plasma so as to be protected from contact with the plasma. Alternatively, the coupling may be carried out by a direct electrical connection from the RF power supply to the one surface.
摘要翻译：本发明在用于处理半导体晶片的等离子体反应器中进行，等离子体反应器具有用于容纳处理气体的室，并具有连接到RF电源的导体，用于将RF功率耦合到反应器室中以从处理气体产生腔室内的等离子体，该腔室包含至少一个暴露于等离子体的表面并容易受到在晶片加工期间产生的颗粒的污染，本发明通过在晶片加工期间促进从等离子体中轰击颗粒而进行在一个表面上去除在晶片加工期间沉积的污染物。通过在晶片的处理期间提供RF电源和耦合来进行轰击的这种促进是从电源到单个表面的RF功率。耦合可以通过与一个表面相邻的电容清洁电极，电容清洁电极连接到RF电源来进行。电容式清洁电极优选地设置在与等离子体相对的一个表面的一侧，以便被保护而不与等离子体接触。或者，耦合可以通过从RF电源到一个表面的直接电连接来执行。

5. 发明授权

US5777289A RF plasma reactor with hybrid conductor and multi-radius dome ceiling 失效
标题翻译：射频等离子体反应器与混合导体和多半圆顶天花板
公开(公告)号：US5777289A
公开(公告)日：1998-07-07
申请号：US597445
申请日：1996-02-02
申请人： Hiroji Hanawa , Gerald Zheyao Yin , Diana Xiaobing Ma , Philip M. Salzman , Peter K. Loewenhardt , Allen Zhao
发明人： Hiroji Hanawa , Gerald Zheyao Yin , Diana Xiaobing Ma , Philip M. Salzman , Peter K. Loewenhardt , Allen Zhao
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , B23K10/00
CPC分类号： H01J37/321
摘要： An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall and a ceiling, a wafer pedestal for supporting the wafer in the chamber, an RF power source, apparatus for introducing a processing gas into the reactor chamber, and a coil inductor adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section facing a portion of the side wall and including a bottom winding and a top winding, the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling. The present invention adheres to an optimized coil-dome geometry including a particular dome apex height range relative to the dome base and a particular wafer position range relative to the dome apex.
摘要翻译：用于处理半导体晶片的感应耦合RF等离子体反应器包括具有侧壁和天花板的反应室，用于将晶片支撑在室中的晶片基座，RF电源，将处理气体引入反应室的装置，以及与所述反应室相邻的线圈电感器，所述线圈电感器连接到所述RF电源，所述线圈电感器包括（a）面向所述侧壁的一部分并包括底部绕组和顶部绕组的侧面部分，所述顶部绕组的高度对应于至少约至顶部的顶部高度，以及（b）从侧部的顶部绕组径向向内延伸的顶部部分，以覆盖至少大部分天花板。本发明遵循优化的线圈 - 圆顶几何形状，其包括相对于圆顶基座的特定圆顶顶部高度范围和相对于圆顶顶点的特定晶片位置范围。

6. 发明授权

US06248250B1 RF plasma reactor with hybrid conductor and multi-radius dome ceiling 失效
标题翻译：射频等离子体反应器与混合导体和多半圆顶天花板
公开(公告)号：US06248250B1
公开(公告)日：2001-06-19
申请号：US08897436
申请日：1997-07-21
申请人： Hiroji Hanawa , Gerald Zheyao Yin , Diana Xiaobing Ma , Philip M. Saizman , Peter K. Loewenhardt , Allen Zhao
发明人： Hiroji Hanawa , Gerald Zheyao Yin , Diana Xiaobing Ma , Philip M. Saizman , Peter K. Loewenhardt , Allen Zhao
IPC分类号： H05H146
CPC分类号： H01J37/321
摘要： The present invention adheres to an optimized coil-domed geometry including a particular dome apex height range relative to the dome base and a particular wafer position range relative to the dome apex.
摘要翻译：本发明坚持优化的线圈圆顶几何形状，其包括相对于圆顶基座的特定圆顶顶点高度范围和相对于圆顶顶点的特定晶片位置范围。

7. 发明授权

US08360003B2 Plasma reactor with uniform process rate distribution by improved RF ground return path 有权
标题翻译：等离子体反应器具有均匀的加工速率分布，通过改进的射频接地回路
公开(公告)号：US08360003B2
公开(公告)日：2013-01-29
申请号：US12501966
申请日：2009-07-13
申请人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
发明人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/16 , H01J37/321 , H01J37/32623 , H01J37/32633 , H01J37/32642 , H01L31/18
摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.
摘要翻译：在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度在房间里侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

8. 发明申请

US20120199071A1 PLASMA IMMERSION CHAMBER 审中-公开
标题翻译：等离子体浸泡室
公开(公告)号：US20120199071A1
公开(公告)日：2012-08-09
申请号：US13446732
申请日：2012-04-13
申请人： KENNETH S. COLLINS , Andrew N. Nguyen , Kartik Ramaswamy , Hiroji Hanawa , Douglas A. Buchberger, JR. , Daniel J. Hoffman , Amir Al-Bayati
发明人： KENNETH S. COLLINS , Andrew N. Nguyen , Kartik Ramaswamy , Hiroji Hanawa , Douglas A. Buchberger, JR. , Daniel J. Hoffman , Amir Al-Bayati
IPC分类号： C23C16/455 , C23C16/50
CPC分类号： H01J37/32458 , H01J37/32412 , H01J37/32477
摘要： Embodiments described herein relate to a plasma chamber and processing system utilizing robust components. In one embodiment, a chamber is provided. The chamber includes a body having an interior volume, a gas distribution assembly disposed in the interior volume opposing a substrate support, the gas distribution assembly having a coolant channel disposed thereon, and a first hollow conduit and a second hollow conduit coupled to the body and in fluid communication with the interior volume.
摘要翻译：本文所述的实施例涉及使用鲁棒部件的等离子体室和处理系统。在一个实施例中，提供了一个室。所述腔室包括具有内部体积的本体，设置在所述内部体积中与衬底支撑件相对的气体分配组件，所述气体分配组件具有设置在其上的冷却剂通道，以及联接到所述主体的第一中空导管和第二中空导管，与内部容积流体连通。

9. 发明授权

US08168519B2 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces 有权
标题翻译：等离子体浸没离子注入方法，在室内表面上使用纯的或接近纯的硅调味层
公开(公告)号：US08168519B2
公开(公告)日：2012-05-01
申请号：US13101843
申请日：2011-05-05
申请人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
发明人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
IPC分类号： H01L21/425
CPC分类号： H01J37/32412 , C23C14/48 , C23C14/564 , H01L21/2236
摘要： Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.
摘要翻译：在静电卡盘上采用非常高的RF偏置电压以获得必要的植入深度分布的等离子体浸没离子注入是通过在晶片引入之前首先在内部腔室表面上沉积部分导电的含硅调节层来进行的。

10. 发明申请

US20120086464A1 IN-SITU VHF VOLTAGE/CURRENT SENSORS FOR A PLASMA REACTOR 有权
标题翻译：用于等离子体反应器的现场甚高频电压/电流传感器
公开(公告)号：US20120086464A1
公开(公告)日：2012-04-12
申请号：US13052280
申请日：2011-03-21
申请人： Hiroji Hanawa , Satoru Kobayashi , Kartik Ramaswamy , Shahid Rauf
发明人： Hiroji Hanawa , Satoru Kobayashi , Kartik Ramaswamy , Shahid Rauf
IPC分类号： G01R27/04
CPC分类号： G01R27/32 , G01R19/0061 , H05H1/0081
摘要： An RE voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement. An RF current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber.
摘要翻译： RE电压探头适于具有长同轴电缆，以允许测量装置远离探头连接，而不会使电压测量失真。 RF电流探针被封装在导电壳体中以允许其放置在等离子体反应器室内。

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