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1. 发明授权

US06270617B1 RF plasma reactor with hybrid conductor and multi-radius dome ceiling 失效
标题翻译：射频等离子体反应器与混合导体和多半圆顶天花板
公开(公告)号：US06270617B1
公开(公告)日：2001-08-07
申请号：US08778051
申请日：1997-01-02
申请人： Gerald Yin , Diana Xiabing Ma , Peter Loewenhardt , Philip Salzman , Allen Zhao , Hiroji Hanawa
发明人： Gerald Yin , Diana Xiabing Ma , Peter Loewenhardt , Philip Salzman , Allen Zhao , Hiroji Hanawa
IPC分类号： H05H100
CPC分类号： H01J37/321
摘要： An RF plasma reactor for processing a semiconductor wafer in a reactor chamber with a multi-radius dome-shaped ceiling and a gas inlet for supplying a process gas into the chamber includes an overhead RF signal applicator near the ceiling for applying an RF signal into the chamber through the ceiling to maintain a plasma of the process gas in the chamber, the plasma having a radial ion density distribution near the plane of the pedestal which is center-high for a greater height of the ceiling above the pedestal and is center-low for a lesser height, the height of the ceiling being intermediate the greater and lesser heights such that the radial ion density distribution is neither center-high nor center-low. In another aspect of the invention, the RF signal applicator has an annular distribution characterized by an effective mean radius, the plasma having a radial ion density distribution with respect to an axis of symmetry of the ceiling which is center-high for a lesser mean radius of the signal applicator and center-low for a greater mean radius of the signal applicator, the mean radius of the signal applicator being intermediate the greater and lesser mean radii such that the radial ion density distribution is neither center-high nor center-low.
摘要翻译：用于在具有多半圆顶形天花板的反应室中处理半导体晶片的RF等离子体反应器和用于将工艺气体供应到室中的气体入口包括在天花板附近的顶置RF信号施加器，用于将RF信号施加到通过天花板保持腔室中的处理气体的等离子体，等离子体在基座的平面附近具有径向离子密度分布，该基座的平面是中心高的，用于在基座上方的天花板的更高的高度，并且是中心的对于较小的高度，天花板的高度在较大和较小的高度之间，使得径向离子密度分布既不是中心高也不是中心低。在本发明的另一方面，RF信号施加器具有由有效平均半径表征的环形分布，等离子体相对于天花板的对称轴线具有径向离子密度分布，其对于较小的平均半径为中心高并且信号施加器的平均半径更大，信号施加器的平均半径在较大和较小的平均半径之间，使得径向离子密度分布既不是中心高也不是中心低。

2. 发明授权

US06475335B1 RF plasma reactor with hybrid conductor and multi-radius dome ceiling 失效
标题翻译：射频等离子体反应器与混合导体和多半圆顶天花板
公开(公告)号：US06475335B1
公开(公告)日：2002-11-05
申请号：US09658572
申请日：2000-09-08
申请人： Gerald Yin , Diana Xiabing Ma , Peter Loewenhardt , Philip Salzman , Allen Zhao , Hiroji Hanawa
发明人： Gerald Yin , Diana Xiabing Ma , Peter Loewenhardt , Philip Salzman , Allen Zhao , Hiroji Hanawa
IPC分类号： H05H100
CPC分类号： H01J37/321
摘要： An RF plasma reactor for processing a semiconductor wafer in a reactor chamber with a multi-radius dome-shaped ceiling and a gas inlet for supplying a process gas into the chamber includes an overhead RF signal applicator near the ceiling for applying an RF signal into the chamber through the ceiling to maintain a plasma of the process gas in the chamber, the plasma having a radial ion density distribution near the plane of the pedestal which is center-high for a greater height of the ceiling above the pedestal and is center-low for a lesser height, the height of the ceiling being intermediate the greater and lesser heights such that the radial ion density distribution is neither center-high nor center-low. In another aspect of the invention, the RF signal applicator has an annular distribution characterized by an effective mean radius, the plasma having a radial ion density distribution with respect to an axis of symmetry of the ceiling which is center-high for a lesser mean radius of the signal applicator and center-low for a greater mean radius of the signal applicator, the mean radius of the signal applicator being intermediate the greater and lesser mean radii such that the radial ion density distribution is neither center-high nor center-low.
摘要翻译：用于在具有多半圆顶形天花板的反应室中处理半导体晶片的RF等离子体反应器和用于将工艺气体供应到室中的气体入口包括在天花板附近的顶置RF信号施加器，用于将RF信号施加到通过天花板保持腔室中的处理气体的等离子体，等离子体在基座的平面附近具有径向离子密度分布，该基座的平面是中心高的，用于在基座上方的天花板的更高的高度，并且是中心的对于较小的高度，天花板的高度在较大和较小的高度之间，使得径向离子密度分布既不是中心高也不是中心低。在本发明的另一方面，RF信号施加器具有由有效平均半径表征的环形分布，等离子体相对于天花板的对称轴线具有径向离子密度分布，其对于较小的平均半径为中心高并且信号施加器的平均半径更大，信号施加器的平均半径在较大和较小的平均半径之间，使得径向离子密度分布既不是中心高也不是中心低。

3. 发明授权

US5753044A RF plasma reactor with hybrid conductor and multi-radius dome ceiling 失效
标题翻译：射频等离子体反应器与混合导体和多半圆顶天花板
公开(公告)号：US5753044A
公开(公告)日：1998-05-19
申请号：US389889
申请日：1995-02-15
申请人： Hiroji Hanawa , Gerald Zheyao Yin , Diana X. Ma , Phil M. Salzman , Peter Loewenhardt , Allen Zhao
发明人： Hiroji Hanawa , Gerald Zheyao Yin , Diana X. Ma , Phil M. Salzman , Peter Loewenhardt , Allen Zhao
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321
摘要： An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall and a ceiling, a wafer pedestal for supporting the wafer in the chamber, an RF power source, apparatus for introducing a processing gas into the reactor chamber, and a coil inductor adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section facing a portion of the side wall and including a bottom winding and a top winding, the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling.
摘要翻译：用于处理半导体晶片的感应耦合RF等离子体反应器包括具有侧壁和天花板的反应室，用于将晶片支撑在室中的晶片基座，RF电源，将处理气体引入反应室的装置，以及与所述反应室相邻的线圈电感器，所述线圈电感器连接到所述RF电源，所述线圈电感器包括（a）面向所述侧壁的一部分并包括底部绕组和顶部绕组的侧面部分，所述顶部绕组的高度对应于至少大约到顶部的顶部高度，以及（b）从侧部的顶部绕组径向向内延伸的顶部部分，以便至少覆盖天花板的大部分。

4. 发明授权

US5777289A RF plasma reactor with hybrid conductor and multi-radius dome ceiling 失效
标题翻译：射频等离子体反应器与混合导体和多半圆顶天花板
公开(公告)号：US5777289A
公开(公告)日：1998-07-07
申请号：US597445
申请日：1996-02-02
申请人： Hiroji Hanawa , Gerald Zheyao Yin , Diana Xiaobing Ma , Philip M. Salzman , Peter K. Loewenhardt , Allen Zhao
发明人： Hiroji Hanawa , Gerald Zheyao Yin , Diana Xiaobing Ma , Philip M. Salzman , Peter K. Loewenhardt , Allen Zhao
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , B23K10/00
CPC分类号： H01J37/321
摘要： An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall and a ceiling, a wafer pedestal for supporting the wafer in the chamber, an RF power source, apparatus for introducing a processing gas into the reactor chamber, and a coil inductor adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section facing a portion of the side wall and including a bottom winding and a top winding, the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling. The present invention adheres to an optimized coil-dome geometry including a particular dome apex height range relative to the dome base and a particular wafer position range relative to the dome apex.
摘要翻译：用于处理半导体晶片的感应耦合RF等离子体反应器包括具有侧壁和天花板的反应室，用于将晶片支撑在室中的晶片基座，RF电源，将处理气体引入反应室的装置，以及与所述反应室相邻的线圈电感器，所述线圈电感器连接到所述RF电源，所述线圈电感器包括（a）面向所述侧壁的一部分并包括底部绕组和顶部绕组的侧面部分，所述顶部绕组的高度对应于至少约至顶部的顶部高度，以及（b）从侧部的顶部绕组径向向内延伸的顶部部分，以覆盖至少大部分天花板。本发明遵循优化的线圈 - 圆顶几何形状，其包括相对于圆顶基座的特定圆顶顶部高度范围和相对于圆顶顶点的特定晶片位置范围。

5. 发明授权

US06248250B1 RF plasma reactor with hybrid conductor and multi-radius dome ceiling 失效
标题翻译：射频等离子体反应器与混合导体和多半圆顶天花板
公开(公告)号：US06248250B1
公开(公告)日：2001-06-19
申请号：US08897436
申请日：1997-07-21
申请人： Hiroji Hanawa , Gerald Zheyao Yin , Diana Xiaobing Ma , Philip M. Saizman , Peter K. Loewenhardt , Allen Zhao
发明人： Hiroji Hanawa , Gerald Zheyao Yin , Diana Xiaobing Ma , Philip M. Saizman , Peter K. Loewenhardt , Allen Zhao
IPC分类号： H05H146
CPC分类号： H01J37/321
摘要： The present invention adheres to an optimized coil-domed geometry including a particular dome apex height range relative to the dome base and a particular wafer position range relative to the dome apex.
摘要翻译：本发明坚持优化的线圈圆顶几何形状，其包括相对于圆顶基座的特定圆顶顶点高度范围和相对于圆顶顶点的特定晶片位置范围。

6. 发明申请

US20070026665A1 METHOD OF FABRICATING A DUAL DAMASCENE INTERCONNECT STRUCTURE 审中-公开
标题翻译：双重DAMASCENE互连结构的制作方法
公开(公告)号：US20070026665A1
公开(公告)日：2007-02-01
申请号：US11535935
申请日：2006-09-27
申请人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
发明人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
IPC分类号： H01L21/4763 , H01L21/461 , H01L21/302
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76808
摘要： A method of fabricating a dual damascene interconnect structure uses a very high frequency high-density plasma and selectively controlled substrate bias for in-situ etching a trench above a via hole of the interconnect structure and a barrier layer between the via hole and underlying conductive layer.
摘要翻译：制造双镶嵌互连结构的方法使用非常高频的高密度等离子体和选择性控制的衬底偏压，用于原位蚀刻互连结构的通孔上方的沟槽以及通孔和下面的导电层之间的阻挡层。

7. 发明申请

US20050059234A1 Method of fabricating a dual damascene interconnect structure 审中-公开
标题翻译：制造双镶嵌互连结构的方法
公开(公告)号：US20050059234A1
公开(公告)日：2005-03-17
申请号：US10663304
申请日：2003-09-16
申请人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
发明人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
IPC分类号： H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76808
摘要： A method of fabricating a dual damascene interconnect structure uses a very high frequency high-density plasma and selectively controlled substrate bias for in-situ etching a trench above a via hole of the interconnect structure and a barrier layer between the via hole and underlying conductive layer.
摘要翻译：制造双镶嵌互连结构的方法使用非常高频的高密度等离子体和选择性控制的衬底偏压，用于原位蚀刻互连结构的通孔上方的沟槽，以及通孔和下面的导电层之间的阻挡层。

8. 发明授权

US06825562B2 Damascene structure fabricated using a layer of silicon-based photoresist material 失效
标题翻译：使用硅基光致抗蚀剂材料层制造的镶嵌结构
公开(公告)号：US06825562B2
公开(公告)日：2004-11-30
申请号：US10290637
申请日：2002-11-08
申请人： Mehul B. Naik , Tim Weidman , Dian Sugiarto , Allen Zhao
发明人： Mehul B. Naik , Tim Weidman , Dian Sugiarto , Allen Zhao
IPC分类号： H01L2348
CPC分类号： H01L21/31144 , H01L21/0212 , H01L21/02271 , H01L21/02282 , H01L21/0332 , H01L21/3121 , H01L21/76802 , H01L21/76807 , H01L21/7681 , H01L21/76811 , H01L21/76813 , H01L21/76829 , H01L21/76835 , H01L2221/1021 , Y10S438/942
摘要： A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low k materials. During the manufacturing process that forms the damascene structures, the silicon-based photosensitive material is used as both a hard mask and/or an etch stop.
摘要翻译：一种镶嵌结构及其制造方法，其包含相当低的介电常数材料（例如，k小于3.8）。使用诸如等离子体聚合甲基硅烷（PPMS）的硅基感光材料来形成含有低k材料的单镶嵌和双镶嵌结构。在形成镶嵌结构的制造过程中，将硅基感光材料用作硬掩模和/或蚀刻停止物。

9. 发明授权

US06547978B2 Method of heating a semiconductor substrate 失效
公开(公告)号：US06547978B2
公开(公告)日：2003-04-15
申请号：US10017001
申请日：2001-12-13
申请人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma , Chang-Lin Hsieh
发明人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma , Chang-Lin Hsieh
IPC分类号： B44C0122
CPC分类号： H01L21/02071 , C23F4/00 , H01L21/32136
摘要： Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. This is particularly important for feature sizes less than about 0.5 &mgr;m, where presence of even a limited amount of a corrosive agent can eat away a large portion of the feature. The copper feature integrity is protected by several different mechanisms: 1) The reactive etchant species are designed to be only moderately aggressive, so that an acceptable etch rate is achieved without loss of control over the feature profile or the etch surface; 2) Hydrogen is applied over the etch surface so that it is absorbed onto the etch surface, where it acts as a boundary which must be crossed by the reactive species and a chemical modulator for the reactive species; and 3) Process variables are adjusted so that byproducts from the etch reaction are rendered more volatile and easily removable from the etch surface. In an inductively coupled plasma etch chamber, we have observed that the preferred chlorine reactive species are generated when the chlorine is dissociated from compounds rather than furnished as Cl2 gas.

10. 发明授权

US06489247B1 Copper etch using HCl and HBR chemistry 失效
标题翻译：铜蚀刻使用HCl和HBR化学
公开(公告)号：US06489247B1
公开(公告)日：2002-12-03
申请号：US09393446
申请日：1999-09-08
申请人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma
发明人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , C23F4/00 , H01L21/32136
摘要： Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface. The most preferred embodiment of the invention provides for the use of hydrogen chloride (HCl) and/or hydrogen bromide (HBr) as the sole or principal source of the reactive species used in etching copper. Dissociation of the HCl and/or HBr provides the large amounts of hydrogen necessary to protect the copper feature etched surfaces from penetration by reactive species adjacent the etched surface. Additional hydrogen gas may be added to the plasma feed gas which comprises the HCl and/or HBr when the reactive species density in the etch process chamber is particularly high. Although the HCl or HBr may be used as an additive in combination with other plasma feed gases, preferably HCl or HBr or a combination thereof accounts for at least 40%, and more preferably at least 50%, of the reactive species generated by the plasma. Most preferably, HCl or HBr should account for at least 80% of the reactive species generated by the plasma.
摘要翻译：铜可以以可接受的速率提供期望的特征尺寸和完整性并且具有相对于相邻材料的选择性的方式进行图案蚀刻。为了提供特征完整性，已经蚀刻到所需尺寸和形状的铜特征表面的部分在蚀刻相邻特征表面期间必须被保护。为了避免被蚀刻的铜表面内部的活性物质的捕获，将氢施加到该表面。氢吸附在铜外表面上，并可能被吸收到铜的外表面，使其可以与否则会渗入该外表面的物质反应并与铜表面反应。必须向铜特征的蚀刻部分的外表面施加足够的氢以防止由于相邻特征表面的蚀刻而渗透先前蚀刻的特征外表面而存在的入射反应物种。本发明最优选的实施方案提供了使用氯化氢（HCl）和/或溴化氢（HBr）作为用于蚀刻铜的反应物质的唯一或主要来源。 HCl和/或HBr的离解提供了保护铜特征蚀刻表面免受邻近蚀刻表面的反应性物质渗透所需的大量氢。当蚀刻处理室中的反应物种密度特别高时，可以向包括HCl和/或HBr的等离子体进料气体中加入另外的氢气。尽管HCl或HBr可以与其他等离子体原料气体组合使用，但优选HCl或HBr或其组合占等离子体产生的反应性物质的至少40％，更优选至少50％。最优选地，HCl或HBr应占等离子体产生的反应性物质的至少80％。

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