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1. 发明授权

US07601246B2 Methods of sputtering a protective coating on a semiconductor substrate 有权
标题翻译：在半导体衬底上溅射保护涂层的方法
公开(公告)号：US07601246B2
公开(公告)日：2009-10-13
申请号：US10952088
申请日：2004-09-29
申请人： Jisoo Kim , Jong Shon , Biming Yen , Peter Loewenhardt
发明人： Jisoo Kim , Jong Shon , Biming Yen , Peter Loewenhardt
IPC分类号： C23C14/34
CPC分类号： C23C14/3457 , C23C14/185 , H01L21/31138 , H01L21/31144 , H01L21/76814 , H01L2221/1063
摘要： Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.
摘要翻译：将含硅或金属材料的保护涂层沉积到半导体衬底上的方法包括将这种材料从电极溅射到等离子体处理室中的半导体衬底上。保护材料可以沉积在覆盖低k材料和/或低k材料的多层掩模上。该方法可用于双镶嵌工艺中以保护掩模并增强蚀刻选择性，以在抗蚀剂剥离过程中保护低k材料免受碳的损耗，和/或保护低k材料免受水分吸收。

2. 发明申请

US20090020417A1 Methods of sputtering a protective coating on a semiconductor substrate 有权
公开(公告)号：US20090020417A1
公开(公告)日：2009-01-22
申请号：US10952088
申请日：2004-09-29
申请人： Jisoo Kim , Jong Shon , Bi Ming Yen , Peter Loewenhardt
发明人： Jisoo Kim , Jong Shon , Bi Ming Yen , Peter Loewenhardt
IPC分类号： C23C14/34
CPC分类号： C23C14/3457 , C23C14/185 , H01L21/31138 , H01L21/31144 , H01L21/76814 , H01L2221/1063
摘要： Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.

3. 发明申请

US20050205519A1 Methods for the optimization of substrate etching in a plasma processing system 有权
标题翻译：在等离子体处理系统中优化衬底蚀刻的方法
公开(公告)号：US20050205519A1
公开(公告)日：2005-09-22
申请号：US10804430
申请日：2004-03-19
申请人： Jisoo Kim , Binet Worsham , Bi-Ming Yen , Peter Loewenhardt
发明人： Jisoo Kim , Binet Worsham , Bi-Ming Yen , Peter Loewenhardt
IPC分类号： B44C1/22 , C03C15/00 , C23F1/00 , H01L21/302 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/76811 , H01L21/76813
摘要： A method of etching a substrate in a plasma processing system is disclosed. The substrate has a semi-conductor layer, a first barrier layer disposed above the semi-conductor layer, a low-k layer disposed above the first barrier layer, a third hard mask layer disposed above the low-k layer; a second hard mask layer disposed above the third hard mask layer, and a first hard mask layer disposed above the second hard mask layer. The method includes alternatively etching the substrate with a first etchant and a second etchant, wherein the first etchant has a low selectivity to a first hard mask material of the first hard mask layer, a third hard mask material of the a third hard mask layer, and a first barrier layer material of the first barrier layer, but a high selectivity to a second hard mask material of the second hard mask layer; and wherein the second etchant has a high selectivity to the first hard mask material of the first hard mask layer, the third hard mask material of the third hard mask layer, and the first barrier layer material of the first barrier layer, and the first etchant has a low selectivity to the second hard mask material of the second hard mask layer.
摘要翻译：公开了一种在等离子体处理系统中蚀刻衬底的方法。衬底具有半导体层，设置在半导体层上方的第一势垒层，设置在第一阻挡层上方的低k层，设置在低k层上方的第三硬掩模层; 设置在第三硬掩模层之上的第二硬掩模层，以及设置在第二硬掩模层上方的第一硬掩模层。所述方法包括用第一蚀刻剂和第二蚀刻剂替代地蚀刻所述衬底，其中所述第一蚀刻剂对所述第一硬掩模层的第一硬掩模材料具有低选择性，所述第三硬掩模层的第三硬掩模材料，和第一阻挡层的第一阻挡层材料，但对第二硬掩模层的第二硬掩模材料具有高选择性; 并且其中第二蚀刻剂对第一硬掩模层的第一硬掩模材料，第三硬掩模层的第三硬掩模材料和第一阻挡层的第一阻挡层材料和第一蚀刻剂具有高选择性对第二硬掩模层的第二硬掩模材料具有低选择性。

4. 发明授权

US08533391B2 Storage device and user device including the same 有权
标题翻译：存储设备和包含其的用户设备
公开(公告)号：US08533391B2
公开(公告)日：2013-09-10
申请号：US13365485
申请日：2012-02-03
申请人： Donghyun Song , Chanik Park , Sang Lyul Min , Sheayun Lee , Taesung Jung , Sang-Jin Oh , Moonwook Oh , Jisoo Kim
发明人： Donghyun Song , Chanik Park , Sang Lyul Min , Sheayun Lee , Taesung Jung , Sang-Jin Oh , Moonwook Oh , Jisoo Kim
IPC分类号： G06F12/00
CPC分类号： G06F3/0656 , G06F3/0616 , G06F3/0625 , G06F3/0679 , Y02D10/154
摘要： A storage device includes a host interface, a buffer memory, a storage medium, and a controller. The host interface is configured to receive storage data and an invalidation command, where the invalidation command is indicative of invalid data among the storage data received by the host interface. The buffer memory is configured to temporarily store the storage data received by the host interface. The controller is configured to execute a transcribe operation in which the storage data temporarily stored in the buffer memory is selectively stored in the storage medium. Further, the controller is responsive to receipt of the invalidation command to execute a logging process when a memory capacity of the invalid data indicated by the invalidation command is equal to or greater than a reference capacity.
摘要翻译：存储装置包括主机接口，缓冲存储器，存储介质和控制器。主机接口被配置为接收存储数据和无效命令，其中无效命令指示由主机接口接收的存储数据中的无效数据。缓冲存储器被配置为临时存储由主机接口接收的存储数据。控制器被配置为执行转录操作，其中临时存储在缓冲存储器中的存储数据被选择性地存储在存储介质中。此外，当由无效命令指示的无效数据的存储器容量等于或大于参考容量时，控制器响应于接收到无效命令以执行记录处理。

5. 发明申请

US20110123020A1 ENDECRYPTOR CAPABLE OF PERFORMING PARALLEL PROCESSING AND ENCRYPTION/DECRYPTION METHOD THEREOF 有权
标题翻译：执行并行处理和加密/分解方法的后处理器
公开(公告)号：US20110123020A1
公开(公告)日：2011-05-26
申请号：US12874799
申请日：2010-09-02
申请人： Hong-Mook Choi , Jisoo Kim , Xingguang Feng , Woo-Hyun Lee
发明人： Hong-Mook Choi , Jisoo Kim , Xingguang Feng , Woo-Hyun Lee
IPC分类号： H04L9/28
CPC分类号： H04L9/0637 , H04L2209/125 , H04L2209/20
摘要： An encryption/decryption method of an endecryptor including a plurality of endecryption units supporting an XES mode with tweak and ciphertext streaming (XTS) includes dividing an input data stream into consecutive data units; inputting the divided data units to the endecryption units, respectively; and simultaneously processing the input data units at the respective endecryption units. According to the encryption/decryption method, parallel processing is performed to encrypt/decrypt data at higher speed.
摘要翻译：包括支持具有调整和密文流传输（XTS）的XES模式的多个边界处理单元的加密/解密方法包括：将输入数据流划分成连续的数据单元; 将分割的数据单元分别输入到内部加密单元; 并且在相应的内部加密单元处同时处理输入数据单元。根据加密/解密方法，并行处理以较高的速度加密/解密数据。

6. 发明申请

US20110031214A1 VACUUM PROCESSING CHAMBERS INCORPORATING A MOVEABLE FLOW EQUALIZER 失效
标题翻译：真空加工罐配有可移动流量均衡器
公开(公告)号：US20110031214A1
公开(公告)日：2011-02-10
申请号：US12537179
申请日：2009-08-06
申请人： Jisoo Kim , Thorsten B. Lill
发明人： Jisoo Kim , Thorsten B. Lill
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01L21/68785 , C23C16/4412 , H01J37/185 , H01J37/3244 , H01J37/32449 , H01J2237/182 , H01J2237/2001 , H01L21/6719
摘要： A method and apparatus for vacuum processing of a workpiece, the apparatus including a flow equalizer disposed in a vacuum processing chamber between a workpiece support pedestal and a pump port located in a wall of the vacuum processing chamber. In an embodiment, the flow equalizer has a first annular surface concentric about the workpiece support pedestal to provide conductance symmetry about the workpiece support even when the pump port is asymmetrically positioned within the vacuum processing chamber. In an embodiment, the flow equalizer has a second annular surface facing a lower surface of the workpiece support pedestal to restrict conductance as the flow equalizer is moved is response to a chamber pressure control signal. In an embodiment, the apparatus for vacuum processing of a workpiece includes tandem vacuum processing chambers sharing a vacuum pump with each tandem chamber including a flow equalizer to reduce cross-talk between the tandem chambers.
摘要翻译：一种用于真空处理工件的方法和装置，该装置包括设置在工件支撑基座和位于真空处理室的壁中的泵口之间的真空处理室中的流量均衡器。在一个实施例中，流量均衡器具有围绕工件支撑基座同心的第一环形表面，以便即使当泵口不对称地位于真空处理室内时也能够提供关于工件支撑件的电导对称性。在一个实施例中，流量均衡器具有面向工件支撑基座的下表面的第二环形表面，以在流量均衡器移动时限制电导响应于腔室压力控制信号。在一个实施例中，用于真空处理工件的装置包括串联真空处理室，其共享真空泵，每个串联室包括流量均衡器以减少串联室之间的串扰。

7. 发明授权

US09140355B2 Automatic transmission lever assembly having shift-lock cam using electromagnet 有权
标题翻译：具有使用电磁铁的换档锁定凸轮的自动变速杆组件
公开(公告)号：US09140355B2
公开(公告)日：2015-09-22
申请号：US13540391
申请日：2012-07-02
申请人： Jisoo Kim
发明人： Jisoo Kim
IPC分类号： B60K20/00 , G05G5/00 , F16H61/22
CPC分类号： F16H61/22 , F16H2061/223 , Y10T74/20085
摘要： Disclosed therein is an automatic transmission lever assembly having a shift-lock cam having an electromagnet. The automatic transmission lever assembly includes: a base bracket fixed to a frame of a vehicle; a rod; a rotating member joined to a lower end of the rod, the rotating member rotating on a predetermined shaft according to a movement of the rod for changing a transmission mode and having a locking portion formed at a position corresponding to a shift-lock; a shift-lock cam having a permanent magnet, the shift-lock cam being caught to the locking portion at a shift-lock position and being rotatable on the shaft; and an electromagnet provided at a position facing the permanent magnet, wherein when a brake signal is transferred, electric current flows to the electromagnet, so that the shift-lock cam is operated in a direction to be released from the locking portion.
摘要翻译：其中公开了一种自动变速杆组件，其具有带有电磁铁的换挡锁定凸轮。自动变速杆组件包括：固定在车辆框架上的底架; 一根杆连接到所述杆的下端的旋转构件，所述旋转构件根据用于改变变速器模式的杆的移动而在预定轴上旋转，并且具有形成在对应于换档锁定的位置的锁定部; 具有永磁体的换档锁定凸轮，所述换档锁定凸轮在换档锁定位置处被卡止到所述锁定部分并且可以在所述轴上旋转; 以及设置在面向永磁体的位置的电磁体，其中当传递制动信号时，电流流向电磁体，使得换挡锁定凸轮沿着从锁定部分释放的方向操作。

8. 发明授权

US08683594B2 Data storage devices including integrated anti-virus circuits and method of operating the same 有权
标题翻译：数据存储设备包括集成防病毒电路及其操作方法
公开(公告)号：US08683594B2
公开(公告)日：2014-03-25
申请号：US13425373
申请日：2012-03-20
申请人： Byung-Gook Kim , Chanik Park , Jisoo Kim , Dawoon Jung
发明人： Byung-Gook Kim , Chanik Park , Jisoo Kim , Dawoon Jung
IPC分类号： G06F11/00 , G06F12/14 , G06F12/16 , G08B23/00 , G06F9/00 , G06F15/16 , G06F17/00 , G06F11/30
CPC分类号： G06F21/567 , G06F21/78
摘要： A data storage device includes a storage medium and a controller circuit configured to be coupled to an external host to provide an interface between the external host and the storage medium, the controller circuit configured to detect a virus carried by a data file transferred to and/or stored in the storage medium. The controller circuit may be further configured to cure the detected virus.
摘要翻译：数据存储设备包括存储介质和控制器电路，该控制器电路被配置为耦合到外部主机以在外部主机和存储介质之间提供接口，该控制器电路被配置为检测由传送到和/ 或存储在存储介质中。控制器电路还可以被配置成固化检测到的病毒。

9. 发明申请

US20120144090A1 STORAGE DEVICE AND USER DEVICE INCLUDING THE SAME 有权
标题翻译：存储装置和包括其的用户装置
公开(公告)号：US20120144090A1
公开(公告)日：2012-06-07
申请号：US13365485
申请日：2012-02-03
申请人： Donghyun Song , Chanik Park , Sang Lyul Min , Sheayun Lee , Taesung Jung , Sang-Jin Oh , Moonwook Oh , Jisoo Kim
发明人： Donghyun Song , Chanik Park , Sang Lyul Min , Sheayun Lee , Taesung Jung , Sang-Jin Oh , Moonwook Oh , Jisoo Kim
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F3/0656 , G06F3/0616 , G06F3/0625 , G06F3/0679 , Y02D10/154
摘要： A storage device includes a host interface, a buffer memory, a storage medium, and a controller. The host interface is configured to receive storage data and an invalidation command, where the invalidation command is indicative of invalid data among the storage data received by the host interface. The buffer memory is configured to temporarily store the storage data received by the host interface. The controller is configured to execute a transcribe operation in which the storage data temporarily stored in the buffer memory is selectively stored in the storage medium. Further, the controller is responsive to receipt of the invalidation command to execute a logging process when a memory capacity of the invalid data indicated by the invalidation command is equal to or greater than a reference capacity.
摘要翻译：存储装置包括主机接口，缓冲存储器，存储介质和控制器。主机接口被配置为接收存储数据和无效命令，其中无效命令指示由主机接口接收的存储数据中的无效数据。缓冲存储器被配置为临时存储由主机接口接收的存储数据。控制器被配置为执行转录操作，其中临时存储在缓冲存储器中的存储数据被选择性地存储在存储介质中。此外，当由无效命令指示的无效数据的存储器容量等于或大于参考容量时，控制器响应于接收到无效命令以执行记录处理。

10. 发明授权

US08172948B2 De-fluoridation process 有权
标题翻译：脱氟工艺
公开(公告)号：US08172948B2
公开(公告)日：2012-05-08
申请号：US11934023
申请日：2007-11-01
申请人： Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
发明人： Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/76816 , H01L21/0212 , H01L21/02274 , H01L21/0234 , H01L21/0271 , H01L21/0337 , H01L21/0338 , H01L21/31058 , H01L21/31138 , H01L21/3127 , H01L21/32139
摘要： A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A fluorine-containing conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Fluorine is removed from the conformal layer, while the remaining conformal layer is left in place. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
摘要翻译：提供了一个图层中的一个特征。在该层上形成光致抗蚀剂层。光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光致抗蚀剂特征具有第一临界尺寸。在光致抗蚀剂特征的侧壁上沉积含氟共形层，以减少光致抗蚀剂特征的临界尺寸。氟从保形层去除，而剩余的保形层留在原位。将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。

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