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1. 发明授权

US07226852B1 Preventing damage to low-k materials during resist stripping 有权
标题翻译：防止抗蚀剂剥离时对低k材料的损伤
公开(公告)号：US07226852B1
公开(公告)日：2007-06-05
申请号：US10866382
申请日：2004-06-10
申请人： Siyi Li , Helen H. Zhu , Howard Dang , Thomas S. Choi , Peter Loewenhardt
发明人： Siyi Li , Helen H. Zhu , Howard Dang , Thomas S. Choi , Peter Loewenhardt
IPC分类号： H01L21/44
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/3105 , H01L21/31138
摘要： A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.
摘要翻译：提供了在低k电介质层中形成特征的方法。将低k电介质层放置在衬底上。将图案化的光致抗蚀剂掩模放置在低k电介质层上。至少一个特征被蚀刻到低k电介质层中。在蚀刻至少一个特征之后，在至少一个特征上进行CO调节。在CO调节之后剥离图案化的光刻胶掩模。

2. 发明授权

US07385287B2 Preventing damage to low-k materials during resist stripping 有权
标题翻译：防止抗蚀剂剥离时对低k材料的损伤
公开(公告)号：US07385287B2
公开(公告)日：2008-06-10
申请号：US11744035
申请日：2007-05-03
申请人： Siyi Li , Helen H. Zhu , Howard Dang , Thomas S. Choi , Peter Loewenhardt
发明人： Siyi Li , Helen H. Zhu , Howard Dang , Thomas S. Choi , Peter Loewenhardt
IPC分类号： H01L23/52 , H01L29/40
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/3105 , H01L21/31138
摘要： A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO conditioning is preformed on the at least one feature after the at least one feature is etched. The patterned photoresist mask is stripped after the CO conditioning.
摘要翻译：提供了在低k电介质层中形成特征的方法。将低k电介质层放置在衬底上。将图案化的光致抗蚀剂掩模放置在低k电介质层上。至少一个特征被蚀刻到低k电介质层中。在蚀刻至少一个特征之后，在至少一个特征上进行CO调节。在CO调节之后剥离图案化的光刻胶掩模。

3. 发明授权

US06949460B2 Line edge roughness reduction for trench etch 失效
公开(公告)号：US06949460B2
公开(公告)日：2005-09-27
申请号：US10712410
申请日：2003-11-12
申请人： Eric Wagganer , Helen H. Zhu , Daniel Le , Peter Loewenhardt
发明人： Eric Wagganer , Helen H. Zhu , Daniel Le , Peter Loewenhardt
IPC分类号： H01L20060101 , H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method for etching a trench to a trench depth in a dielectric layer over a substrate is provided. An ARC is applied over the dielectric layer. A photoresist mask is formed on the ARC, where the photoresist mask has a thickness. The ARC is etched through. A trench is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.

4. 发明授权

US07294580B2 Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition 有权
标题翻译：使用气体化学和碳氢化合物加成的周期调制的等离子体剥离方法
公开(公告)号：US07294580B2
公开(公告)日：2007-11-13
申请号：US10860833
申请日：2004-06-03
申请人： Seokmin Yun , Ji Zhu , Peter Cirigliano , Sangheon Lee , Thomas S. Choi , Peter Loewenhardt , Mark H. Wilcoxson , Reza Sadjadi , Eric A. Hudson , James V. Tietz
发明人： Seokmin Yun , Ji Zhu , Peter Cirigliano , Sangheon Lee , Thomas S. Choi , Peter Loewenhardt , Mark H. Wilcoxson , Reza Sadjadi , Eric A. Hudson , James V. Tietz
IPC分类号： H01L21/00
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76802 , H01L21/76829
摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.
摘要翻译：一种通过光刻胶蚀刻掩模在衬底上蚀刻低k电介质层中的特征的方法。执行气体调制的循环剥离工艺超过三个循环以剥离单个光致抗蚀剂掩模。气体调节循环汽提过程的每个循环包括进行保护层形成阶段和汽提阶段。使用具有沉积气化学性质的第一气体化学物质的保护层形成阶段，其中保护层形成阶段在每个循环中以约0.005至10秒钟进行。使用第二种气体化学法，使用剥离气体化学法，其中第一种气体化学物质与第二种气体化学物质不同，进行汽提阶段以剥离光致抗蚀剂掩模，其中每个循环在约0.005至10秒内进行蚀刻阶段。

5. 发明授权

US07601246B2 Methods of sputtering a protective coating on a semiconductor substrate 有权
标题翻译：在半导体衬底上溅射保护涂层的方法
公开(公告)号：US07601246B2
公开(公告)日：2009-10-13
申请号：US10952088
申请日：2004-09-29
申请人： Jisoo Kim , Jong Shon , Biming Yen , Peter Loewenhardt
发明人： Jisoo Kim , Jong Shon , Biming Yen , Peter Loewenhardt
IPC分类号： C23C14/34
CPC分类号： C23C14/3457 , C23C14/185 , H01L21/31138 , H01L21/31144 , H01L21/76814 , H01L2221/1063
摘要： Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.
摘要翻译：将含硅或金属材料的保护涂层沉积到半导体衬底上的方法包括将这种材料从电极溅射到等离子体处理室中的半导体衬底上。保护材料可以沉积在覆盖低k材料和/或低k材料的多层掩模上。该方法可用于双镶嵌工艺中以保护掩模并增强蚀刻选择性，以在抗蚀剂剥离过程中保护低k材料免受碳的损耗，和/或保护低k材料免受水分吸收。

6. 发明申请

US20090020417A1 Methods of sputtering a protective coating on a semiconductor substrate 有权
公开(公告)号：US20090020417A1
公开(公告)日：2009-01-22
申请号：US10952088
申请日：2004-09-29
申请人： Jisoo Kim , Jong Shon , Bi Ming Yen , Peter Loewenhardt
发明人： Jisoo Kim , Jong Shon , Bi Ming Yen , Peter Loewenhardt
IPC分类号： C23C14/34
CPC分类号： C23C14/3457 , C23C14/185 , H01L21/31138 , H01L21/31144 , H01L21/76814 , H01L2221/1063
摘要： Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.

7. 发明授权

US07169231B2 Gas distribution system with tuning gas 有权
标题翻译：配有调节气的配气系统
公开(公告)号：US07169231B2
公开(公告)日：2007-01-30
申请号：US10318612
申请日：2002-12-13
申请人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
发明人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
IPC分类号： C23C16/52 , C23C16/455 , C23C16/00 , H01L21/306
CPC分类号： H01L21/67017
摘要： An apparatus for providing different gases to different zones of a processing chamber is provided. A gas supply for providing an etching gas flow is provided. A flow splitter in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs is provided. A tuning gas system in fluid connection to at least one of the legs of the plurality of legs is provided.
摘要翻译：提供了一种用于向处理室的不同区域提供不同气体的装置。提供了用于提供蚀刻气体流的气体供应。提供了一种与气体供应流体连接的分流器，用于将来自气体供给的蚀刻气体流分解成多个支腿。提供了与多个腿部中的至少一个腿流体连接的调节气体系统。

8. 发明申请

US20050133164A1 Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift 有权
标题翻译：用于降低等离子体反应器腐蚀速率漂移的温度控制热边缘环组件
公开(公告)号：US20050133164A1
公开(公告)日：2005-06-23
申请号：US10736666
申请日：2003-12-17
申请人： Andreas Fischer , Peter Loewenhardt
发明人： Andreas Fischer , Peter Loewenhardt
IPC分类号： H01J37/32 , H01L21/00 , H01L21/687 , C23F1/00
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/67069
摘要： A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.
摘要翻译：适于围绕等离子体反应室中的衬底支撑件的温度控制的热边缘环组件。组件包括导电下环，陶瓷中间环和上环。中间环覆盖在下环上并且适于经由下环连接到RF电极。上环覆盖中间环，并且具有暴露于等离子体反应室内部的上表面。

9. 发明申请

US20050101126A1 Line edge roughness reduction for trench etch 失效
公开(公告)号：US20050101126A1
公开(公告)日：2005-05-12
申请号：US10712410
申请日：2003-11-12
申请人： Eric Wagganer , Helen Zhu , Daniel Le , Peter Loewenhardt
发明人： Eric Wagganer , Helen Zhu , Daniel Le , Peter Loewenhardt
IPC分类号： H01L20060101 , H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method for etching a trench to a trench depth in a dielectric layer over a substrate is provided. An ARC is applied over the dielectric layer. A photoresist mask is formed on the ARC, where the photoresist mask has a thickness. The ARC is etched through. A trench is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.

10. 发明授权

US06471822B1 Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma 失效
标题翻译：磁阻等离子体磁感应耦合等离子体反应器
公开(公告)号：US06471822B1
公开(公告)日：2002-10-29
申请号：US09263001
申请日：1999-03-05
申请人： Gerald Yin , Peter Loewenhardt , Arnold Kholodenko , Hong Chin Shan , Chii Lee , Dan Katz
发明人： Gerald Yin , Peter Loewenhardt , Arnold Kholodenko , Hong Chin Shan , Chii Lee , Dan Katz
IPC分类号： H05H100
CPC分类号： H01J37/321 , H01J37/32669
摘要： The present invention provides a plasma reactor having a plasma source chamber capable of generating a high density plasma typically utilizing a helicon wave. The plasma is delivered to a process chamber having a workpiece. The present invention may provide a plurality of magnets, each being located longitudinally around an axis perpendicular to the plane of the workpiece to form a magnetic bucket that extends the length of the side wall of the processing chamber and across a workpiece insertion opening and a vacuum pump opening. The magnetic bucket of the present invention may be formed so that the pedestal need not be raised to be within the bucket, or may be formed by permanent magnets oriented with one pole of each magnet facing the interior of the processing chamber, or with opposite poles of adjacent magnets facing each other, thereby forming cusps around the axis perpendicular to the plane of the workpiece. Current carrying conductors may generate all or part of the magnetic bucket. The present invention may provide an inner wall member secured within the processing chamber. All or a portion of the inner wall may be grounded to provide a well defined anode for bias power that is applied to the workpiece pedestal, and may be heated so that deposits do not cause its impedance to drift.
摘要翻译：本发明提供一种等离子体反应器，其具有能够产生通常利用螺旋波的高密度等离子体源室。将等离子体输送到具有工件的处理室。本发明可以提供多个磁体，每个磁体纵向地围绕垂直于工件的平面的轴定位，以形成一个磁性铲斗，其延伸处理室的侧壁的长度并穿过工件插入口和真空泵开口。本发明的磁性铲斗可以形成为使得底座不需要升高到铲斗内部，或者可以由定向为每个磁体的一极的方向定向的永久磁铁形成，面对处理室的内部，或者具有相对的极相邻的磁体彼此面对，从而围绕垂直于工件的平面的轴线形成尖端。载流导体可以产生磁桶的全部或部分。本发明可以提供固定在处理室内的内壁件。内壁的全部或一部分可以被接地以提供良好限定的用于施加到工件基座的偏置功率的阳极，并且可以被加热，使得沉积物不会使其阻抗漂移。

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