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1. 发明授权

US07294580B2 Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition 有权
标题翻译：使用气体化学和碳氢化合物加成的周期调制的等离子体剥离方法
公开(公告)号：US07294580B2
公开(公告)日：2007-11-13
申请号：US10860833
申请日：2004-06-03
申请人： Seokmin Yun , Ji Zhu , Peter Cirigliano , Sangheon Lee , Thomas S. Choi , Peter Loewenhardt , Mark H. Wilcoxson , Reza Sadjadi , Eric A. Hudson , James V. Tietz
发明人： Seokmin Yun , Ji Zhu , Peter Cirigliano , Sangheon Lee , Thomas S. Choi , Peter Loewenhardt , Mark H. Wilcoxson , Reza Sadjadi , Eric A. Hudson , James V. Tietz
IPC分类号： H01L21/00
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76802 , H01L21/76829
摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.
摘要翻译：一种通过光刻胶蚀刻掩模在衬底上蚀刻低k电介质层中的特征的方法。执行气体调制的循环剥离工艺超过三个循环以剥离单个光致抗蚀剂掩模。气体调节循环汽提过程的每个循环包括进行保护层形成阶段和汽提阶段。使用具有沉积气化学性质的第一气体化学物质的保护层形成阶段，其中保护层形成阶段在每个循环中以约0.005至10秒钟进行。使用第二种气体化学法，使用剥离气体化学法，其中第一种气体化学物质与第二种气体化学物质不同，进行汽提阶段以剥离光致抗蚀剂掩模，其中每个循环在约0.005至10秒内进行蚀刻阶段。

2. 发明授权

US07192531B1 In-situ plug fill 有权
标题翻译：现场插头填充
公开(公告)号：US07192531B1
公开(公告)日：2007-03-20
申请号：US10603412
申请日：2003-06-24
申请人： Sean S. Kang , Sangheon Lee , Wan-Lin Chen , Eric A. Hudson , Reza Sadjadi
发明人： Sean S. Kang , Sangheon Lee , Wan-Lin Chen , Eric A. Hudson , Reza Sadjadi
IPC分类号： H01L21/302
CPC分类号： H01L21/76808 , H01L21/31138
摘要： A method for forming damascene features in a dielectric layer over a barrier layer over a substrate is provided. A plurality of vias are etched in the dielectric layer to the barrier layer with a plasma etching process in the plasma processing chamber. A patterned photoresist layer is formed with a trench pattern. Within a single plasma process chamber a combination via plug deposition to form plugs in the vias over the barrier layer and trench etch is provided.
摘要翻译：提供了一种用于在衬底上的阻挡层上的介电层中形成镶嵌特征的方法。在等离子体处理室中通过等离子体蚀刻工艺将多个通孔在电介质层中蚀刻到阻挡层。形成具有沟槽图案的图案化的光致抗蚀剂层。在单个等离子体处理室内，提供了通过插塞沉积的组合以在阻挡层上的通孔中形成插塞和沟槽蚀刻。

3. 发明授权

US07838086B2 Magnetic enhancement for mechanical confinement of plasma 有权
标题翻译：磁力增强用于等离子体的机械约束
公开(公告)号：US07838086B2
公开(公告)日：2010-11-23
申请号：US12252887
申请日：2008-10-16
申请人： Douglas L. Keil , Lumin Li , Eric A. Hudson , Reza Sadjadi , Eric H. Lenz , Rajinder Dhindsa , Ji Soo Kim
发明人： Douglas L. Keil , Lumin Li , Eric A. Hudson , Reza Sadjadi , Eric H. Lenz , Rajinder Dhindsa , Ji Soo Kim
IPC分类号： H05H1/02 , C23C16/00
CPC分类号： H01J37/3266 , H01J37/32431 , H01J37/32623
摘要： A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.
摘要翻译：提供了一种处理基板的方法。将基板放置在处理室中。从气体源向处理室提供气体。从处理室中的气体产生等离子体。气体流过与至少一个限制环相邻的间隙，以提供等离子体的物理限制。提供等离子体的磁限制以增强等离子体的物理限制。

4. 发明申请

US20090041951A1 MAGNETIC ENHANCEMENT FOR MECHANICAL CONFINEMENT OF PLASMA 有权
标题翻译：机械等离子体磁化强化
公开(公告)号：US20090041951A1
公开(公告)日：2009-02-12
申请号：US12252887
申请日：2008-10-16
申请人： Douglas L. Keil , Lumin Li , Eric A. Hudson , Reza Sadjadi , Eric H. Lenz , Rajinder Dhindsa , Ji Soo Kim
发明人： Douglas L. Keil , Lumin Li , Eric A. Hudson , Reza Sadjadi , Eric H. Lenz , Rajinder Dhindsa , Ji Soo Kim
IPC分类号： H05H1/10
CPC分类号： H01J37/3266 , H01J37/32431 , H01J37/32623
摘要： A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.
摘要翻译：提供了一种处理基板的方法。将基板放置在处理室中。从气体源向处理室提供气体。从处理室中的气体产生等离子体。气体流过与至少一个限制环相邻的间隙，以提供等离子体的物理限制。提供等离子体的磁限制以增强等离子体的物理限制。

5. 发明授权

US06780569B1 Post-development treatment of patterned photoresist to promote cross-linking of polymer chains 有权
标题翻译：显影处理图案化的光致抗蚀剂以促进聚合物链的交联
公开(公告)号：US06780569B1
公开(公告)日：2004-08-24
申请号：US10068282
申请日：2002-02-04
申请人： Eric Hudson , Reza Sadjadi , Daxing Ren , Wan-Lin Chen , Douglas Keil , Peter Cirigliano
发明人： Eric Hudson , Reza Sadjadi , Daxing Ren , Wan-Lin Chen , Douglas Keil , Peter Cirigliano
IPC分类号： G03F700
CPC分类号： G03F7/40
摘要： A method for creating semiconductor devices is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. Polymers in the patterned photoresist layer are chemically cross-linked by exposure to at least one reactive chemical. The pattern in the photoresist layer is transferred to the wafer. A reaction chamber for processing a wafer with a patterned layer of photoresist material, wherein the photoresist material was patterned by exposing the photoresist material using light of a wavelength less than 248 nm is provided. A chamber is provided with a central cavity. A wafer support for supporting the wafer in the central cavity is provided. A cross-linking reactive chemical source in fluid contact with the chamber and which provides a reactive chemical which causes cross-linking of the photoresist is provided.
摘要翻译：提供了一种用于制造半导体器件的方法。在晶片上设置光致抗蚀剂层。对光致抗蚀剂层进行图案化。图案化光致抗蚀剂层中的聚合物通过暴露于至少一种反应性化学物质而被化学交联。光致抗蚀剂层中的图案被转印到晶片上。一种用于处理具有图案化的光致抗蚀剂材料层的晶片的反应室，其中通过使用波长小于248nm的光暴露光致抗蚀剂材料来对光致抗蚀剂材料进行图案化。腔室设有中心腔。提供了用于在中心腔中支撑晶片的晶片支撑件。提供了与室流体接触并提供引起光致抗蚀剂交联的反应性化学物质的交联反应性化学源。

6. 发明授权

US06979579B1 Methods and apparatus for inspecting contact openings in a plasma processing system 失效
标题翻译：用于检查等离子体处理系统中的接触开口的方法和装置
公开(公告)号：US06979579B1
公开(公告)日：2005-12-27
申请号：US10813913
申请日：2004-03-30
申请人： Jisoo Kim , Sangheon Lee , Sean Kang , Binet Worsham , Bi-Ming Yen , Reza Sadjadi , Peter K. Loewenhardt
发明人： Jisoo Kim , Sangheon Lee , Sean Kang , Binet Worsham , Bi-Ming Yen , Reza Sadjadi , Peter K. Loewenhardt
IPC分类号： G01B21/00 , H01J9/42 , H01L21/00 , H01L21/66
CPC分类号： H01J9/42 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In a plasma processing system, a method of inspecting a contact opening of a contact formed in a first layer of the substrate to determine whether the contact reaches a metal layer that is disposed below the first layer is shown. The method includes flowing a gas mixture into a plasma reactor of the plasma processing system, the gas mixture comprising a flow of a chlorine containing gas. The method also includes striking a plasma from the gas mixture; and exposing the contact to the plasma. The method further includes detecting whether metal chloride is present in the contact opening after the exposing.
摘要翻译：在等离子体处理系统中，示出了检查形成在基板的第一层中的接点的接触开口以确定接触是否到达设置在第一层下方的金属层的方法。该方法包括将气体混合物流入等离子体处理系统的等离子体反应器，气体混合物包含含氯气体的流。该方法还包括从气体混合物中冲击等离子体; 并将接触点暴露于等离子体。该方法还包括在曝光后检测接触孔中是否存在金属氯化物。

7. 发明授权

US07455748B2 Magnetic enhancement for mechanical confinement of plasma 有权
标题翻译：磁力增强用于等离子体的机械约束
公开(公告)号：US07455748B2
公开(公告)日：2008-11-25
申请号：US10600191
申请日：2003-06-20
申请人： Douglas L. Keil , Lumin Li , Eric A. Hudson , Reza Sadjadi , Eric H. Lenz , Rajinder Dhindsa , Ji Soo Kim
发明人： Douglas L. Keil , Lumin Li , Eric A. Hudson , Reza Sadjadi , Eric H. Lenz , Rajinder Dhindsa , Ji Soo Kim
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/3266 , H01J37/32431 , H01J37/32623
摘要： A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.
摘要翻译：提供了一种用于处理衬底的等离子体处理装置。提供具有室壁的等离子体处理室。在室壁内提供衬底支撑件。提供至少一个限制环，其中限制环和衬底支撑件限定等离子体体积。提供了一种用于产生用于磁力增强由至少一个限制环提供的物理限制的磁场的磁源。

8. 发明申请

US20050241763A1 Gas distribution system having fast gas switching capabilities 有权
标题翻译：气体分配系统具有快速的气体切换能力
公开(公告)号：US20050241763A1
公开(公告)日：2005-11-03
申请号：US10835175
申请日：2004-04-30
申请人： Zhisong Huang , Jose Sam , Eric Lenz , Rajinder Dhindsa , Reza Sadjadi
发明人： Zhisong Huang , Jose Sam , Eric Lenz , Rajinder Dhindsa , Reza Sadjadi
IPC分类号： H01L21/306
CPC分类号： C23C16/45561 , C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.
摘要翻译：提供了一种用于将诸如等离子体处理装置的等离子体处理室之类的不同气体成分供应到腔室的气体分配系统。气体分配系统可以包括气体供应部分，流量控制部分和切换部分。气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。切换部分优选地包括快速切换阀，其可操作以快速打开和关闭，以允许第一和第二气体的快速切换，优选地，在任一气体的流动中不发生不期望的压力波动或流动不稳定性。

9. 发明授权

US06518174B2 Combined resist strip and barrier etch process for dual damascene structures 失效
公开(公告)号：US06518174B2
公开(公告)日：2003-02-11
申请号：US09746894
申请日：2000-12-22
申请人： Rao Annapragada , Reza Sadjadi
发明人： Rao Annapragada , Reza Sadjadi
IPC分类号： H01L214763
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76807
摘要： A method of etching a stack is provided. Generally, a trench patterned resist layer is placed over a dielectric layer of the stack. A trench is partially etched into the dielectric layer. A simultaneous stripping of the trench patterned resist layer, etching the barrier layer, and etching the trench is then performed. As a result an etch stack may be provided with less damage. The method may be used to provide a dual damascene structure. The dual damascene structure may be provided by etching a via before placing the trench patterned resist layer over the dielectric layer of the stack.

10. 发明授权

US08673785B2 Gas distribution system having fast gas switching capabilities 有权
标题翻译：气体分配系统具有快速的气体切换能力
公开(公告)号：US08673785B2
公开(公告)日：2014-03-18
申请号：US12716918
申请日：2010-03-03
申请人： Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa , Reza Sadjadi
发明人： Zhisong Huang , Jose Tong Sam , Eric H. Lenz , Rajinder Dhindsa , Reza Sadjadi
IPC分类号： H01L21/311 , H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00
CPC分类号： C23C16/45561 , C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.
摘要翻译：提供了一种用于将诸如等离子体处理装置的等离子体处理室之类的不同气体成分供应到腔室的气体分配系统。气体分配系统可以包括气体供应部分，流量控制部分和切换部分。气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。切换部分优选地包括快速切换阀，其可操作以快速打开和关闭，以允许第一和第二气体的快速切换，优选地，在任一气体的流动中不发生不期望的压力波动或流动不稳定性。

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